• Composites Research
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• v.23 no.2
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• pp.10-16
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• 2010

$Al_2O_3$ fiber and SiC particle hybrid metal matrix composites (MMCs) were manufactured by squeeze casting method investigated for their tribological properties. The pin specimens had different ratios of fiber to particle content but their total weight fraction was constant at 20 wt. %. Tribological tests were performed with a pin-on-disk friction and wear tester. The investigation of the dry tribological characteristics of hybrid MMCs were carried out at room temperature and elevated temperature of$100^{\circ}C$ and$150^{\circ}C$. The morphologies of worn surfaces were examined by scanning electron microscope (SEM) to observe tribological characteristics and investigate wear behavior. The results revealed that the wear resistance improved with the content of SiCp increased of the planar random (PR) MMCs at room temperature. At the elevated temperature, it revealed that the wear resistance of normal (N) MMCs was superior to that of the PR-MMCs due to PR-fibers were easily pulled out holistically from the worn surface. Meanwhile, the coefficient of friction decreased with the temperature increasing.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.5
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• pp.808-815
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• 2008

The composites were fabricated 61[vol.%] ${\beta}$-SiC and 39[vol.%] $TiB_2$ powders with the liquid forming additives of 8, 12, 16[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid by pressureless annealing at 1650[$^{\circ}C$] for 4 hours. The present study investigated the influence of the content of $Al_2O_3+Y_2O_3$ sintering additives on the microstructure, mechanical and electrical properties of the pressureless annealed SiC-$TiB_2$ electroconductive ceramic composites. Reactions between SiC and transition metal $TiB_2$ were not observed in the microstructure and the phase analysis of the pressureless annealed SiC-$TiB_2$ electroconductive ceramic composites. Phase analysis of SiC-$TiB_2$ composites by XRD revealed mostly of ${\alpha}$-SiC(6H), ${\beta}$-SiC(3C), $TiB_2$, and In Situ YAG($Al_2Y_3O_{12}$). The relative density of SiC-$TiB_2$ composites was lowered due to gaseous products of the result of reaction between SiC and $Al_2O_3+Y_2O_3$. There is another reason which pressureless annealed temperature 1650[$^{\circ}C$] is lower $300{\sim}450[^{\circ}C]$ than applied pressure sintering temperature $1950{\sim}2100[^{\circ}C]$. The relative density, the flexural strength, the Young's modulus and the Vicker's hardness showed the highest value of 82.29[%], 189.5[Mpa], 54.60[Gpa] and 2.84[Gpa] for SiC-$TiB_2$ composites added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at room temperature. Abnormal grain growth takes place during phase transformation from ${\beta}$-SiC into ${\alpha}$-SiC was correlated with In Situ YAG phase by reaction between $Al_2O_3$ and $Y_2O_3$ additive during sintering. The electrical resistivity showed the lowest value of 0.0117[${\Omega}{\cdot}cm$] for 16[wt%] $Al_2O_3+Y_2O_3$ additives at 25[$^{\circ}C$]. The electrical resistivity was all negative temperature coefficient resistance (NTCR) in the temperature ranges from $25^{\circ}C$ to 700[$^{\circ}C$]. The resistance temperature coefficient of composite showed the lowest value of $-2.3{\times}10^{-3}[^{\circ}C]^{-1}$ for 16[wt%] additives in the temperature ranges from 25[$^{\circ}C$] to 100[$^{\circ}C$].

• Journal of the Korean Ceramic Society
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• v.27 no.5
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• pp.668-676
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• 1990

Glass in the ZrO2-SiO2 system containing up to 30mol% ZrO2 were prepared by heating the gel made from the mixed solutions of Zr(OC3H7)4 and partial hydrolysed Si(OC2H5)4. As a result, the monolith gel was made from the HCl and water content as 2.7$\times$10-3 and 8 molar ratio to alkoxide and drying temoperature as 4$0^{\circ}C$. Heating rate of dry gel maintained under 0.5$^{\circ}C$/min and heating at a temperature as 90$0^{\circ}C$ was found to be for making the transparent glass.

• Journal of Korea Foundry Society
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• v.11 no.3
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• pp.236-244
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• 1991

This paper describes a study of the nucleation and growth of graphite crystal of levitation melted high purity Fe-C-Si alloys with emphasis on hypereutectic composition. Spherulitic graphite was observed to form at high purity alloy and converted to compacted by changing the starting iron from ultra-pure zone refined iron to 99.95 pct electrolitic iron. Residual C-C clusters might be acting as an effective nucleation site for graphite, and sulphur was the element to prevent graphite from nucleating. The graphite morphology changed from compacted to spherulitic as the sulphur content decreased.

• Journal of the Korean Ceramic Society
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• v.40 no.9
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• pp.867-873
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• 2003

$Si_{3}N_{4}$-BN based machinable ceramics were fabricated by hot-pressing at $1800^{\circ}C$ for 2 h under a pressure of 25 MPa. The microstructure, mechanical properties, and machinability were investigated. With increasing h-BN content from 5 vol% to 30 vol%, three point flexural strength decreased from 1000 MPa of monolithic S $i_3$ $N_4$ to 720～400 MPa. The fracture toughness, $K_{IC}$ , was decreased from 7.6 MPaㆍ$m^{1/2}$ of monolithic S $i_3$ $N_4$ to 6.5～4.1 MPaㆍ$m^{1/2}$. The grain size and aspect ratio of $\beta$-S $i_3$ $N_4$ slightly decreased with increasing h-BN content. S $i_3$ $N_4$ monolith could not be machined due to brittle fracture, but S $i_3$ $N_4$-BN based machinable ceramics could be machined without fracture, showing excellent machinability. With increasing h-BN content, the thurst force during cutting and micro-drilling process was decreased.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.11
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• pp.2015-2022
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• 2008

The effect of content of $Al_2O_3+Y_2O_3$ sintering additives on the densification behavior, mechanical and electrical properties of the pressureless-sintered $SiC-ZrB_2$ electroconductive ceramic composites was investigated. The $SiC-ZrB_2$ electroconductive ceramic composites were pressurless-sintered for 2 hours at 1,700[$^{\circ}C$] temperatures with an addition of $Al_2O_3+Y_2O_3$(6 : 4 mixture of $Al_2O_3$ and $Y_2O_3$) as a sintering aid in the range of $8\;{\sim}\;20$[wt%]. Phase analysis of $SiC-ZrB_2$ composites by XRD revealed mostly of $\alpha$-SiC(6H), $ZrB_2$ and In Situ YAG($Al_5Y_3O_{12}$). The relative density, flexural strength, Young's modulus and vicker's hardness showed the highest value of 89.02[%], 81.58[MPa], 31.44[GPa] and 1.34[GPa] for $SiC-ZrB_2$ composites added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at room temperature respectively. Abnormal grain growth takes place during phase transformation from $\beta$-SiC into $\alpha$-SiC was correlated with In Situ YAG phase by reaction between $Al_2O_3$ and $Y_2O_3$ additive during sintering. The electrical resistivity showed the lowest value of $3.l4{\times}10^{-2}{\Omega}{\cdot}cm$ for $SiC-ZrB_2$ composite added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at 700[$^{\circ}C$]. The electrical resistivity of the $SiC-TiB_2$ and $SiC-ZrB_2$ composite was all negative temperature coefficient resistance (NTCR) in the temperature ranges from room temperature to 700[$^{\circ}C$]. Compositional design and optimization of processing parameters are key factors for controlling and improving the properties of SiC-based electroconductive ceramic composites.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2004.11a
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• pp.94-95
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• 2004

Using the high-frequency induction heated combustion method, the simultaneous synthesis and densification of $WSi_2-xvol.%SiC$ (x=0, 10, 20, 30) composites was accomplished using elemental powders of W, Si and C. A complete synthesis and densification of the materials was achieved in one step within a duration of 2 min. The relative density of the composite was up to 97% for the applied pressure of 60MPa and the induced current. The average grain size of $WSi_2$ are 6.9, 6.1, and $5.0{\mu}m$, respectively. The hardness and the fracture toughness increases with increasing SiC content. The maximum values for the hardness and fracture toughness are $1840kg/mm^2\;and\;5.1MPa{\cdot}m^{1/2}\;at\;WSi_2-30vol.%SiC$.

• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.368-373
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• 1998

As device dimensions approach submicrometer size in ULSI, the demand for interlayer dielectric materials with very low dielectric constant is increased to solve problems of RC delay caused by increase in parasitic resistance and capacitance in multilevel interconnectins. Fluorinated amorphous carbon in one of the promising materials in ULSI for the interlayer dielectric films with low dielectric constant. However, poor thermal stability and adhesion with Si substrates have inhibited its use. Recently, amorphous hydrogenated carbon (a-C:H) film as a buffer layer between the Si substrate and a-C:F has been introduced because it improves the adhesion with Si substrate. In this study, therfore, a-C:F/a-C:H films were deposited on p-type Si(100) by ECRCVD from $C_2F_6, CH_4$and $H_2$gas source and investigated the effect of forward power and composition on the thickness, chemical bonding state, dielectric constant, surface morphology and roughness of a-C:F films as an interlayer dielectric for ULSI. SEM, FT-IR, XPS, C-V meter and AFM were used for determination of each properties. The dielectric constant in the a-C:F/a-C:H films were found to decrease with increasing fluorine content. However, the dielectric constant increased after furnace annealing in $N_2$atomosphere at $400^{\circ}C$ for 1hour due to decreasing of flurorine content. However, the dielectric constant increased after furnace annealing in $N_2$atmosphere at $400^{\circ}C$ for 1hour due to decreasing of fluorine concentration.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1604-1607
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• 2009

YAG laser crystallization of Si-based thin film deposited on plastic substrate has been studied. The Si-based thin films as crystallization precursor are with varied hydrogen (H) content. The effect of the H content on the crystallinity of the resulted poly-Si film has been investigated. The experimental results of the poly-Si crystallized by doublefrequency YAG laser shows that the initial dehydrogenation process could be left out if ${\mu}c$-Si was adopted as the crystallization precursor. The YAG laser annealing condition on plastic substrate and the crystallization results have been discussed in the paper.

• Journal of the Korean Ceramic Society
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• v.36 no.2
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• pp.193-202
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• 1999

Al powder, AlN powder, SiC whisker and sintering aids were wet-mixed, and then the specimens prepared with mixed powder were reacted by nitridation at 600∼1400$^{\circ}C$ for 5 hrs. It was cleat that the higher nitridation and the more SiC whisker content were, the better bending strength was. The specimen of Al50/AlN50 reacted at 1400$^{\circ}C$ for 5hrs had the nitridation percent of 97%, the shrinkage under 2%, and the relative density of 78%. And the maximum bending strength of reaction-bonded specimen was 250 MPa. The specimens completely nitrided were post-sintered at 1700, 1800 and 1900$^{\circ}C$ for 2hrs. The post-sintered body had the shrinkage under 6% and the relative density of 86%. Because of the formation of solid solution between AlN and SiC whisker over 1800$^{\circ}C$, the promotion of mechanical properties according to SiC whisker addition was not observed. The post-sintered body had the maximum bending strength of 195 MPa.