• Title/Summary/Keyword: SiC containing ceramics

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Low Temperature Sintering of PNN-PZT Ceramics and Its Electrical Properties (PNN-PZT 세라믹스의 저온 소결 및 전기적 특성 평가)

  • Lee, Myung-Woo;Kim, Sung-Jin;Yoon, Man-Soon;Ryu, Sung-Lim;Kweon, Soon-Yong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.12
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    • pp.1077-1082
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    • 2008
  • To fabricate a multi-layered piezoelectrics/electrodes structure, the piezoelectrics should be sintered at the temperature lower than $950^{\circ}C$ to use the silver electrode, which is cheaper than the electrodes containing noble metals such as Pd and Pt. Therefore, in this study, we modified the composition of $Pb(Zr,Ti)O_3$-based material as $(Pb_{0.98}Cd_{0.02})(Ni_{1/3}Nb_{2/3})_{0.25}Zr_{0.35}Ti_{0.4}O_3$ to lower the sintering temperature and to improve the piezoelectric properties. Small amount of $MnCO_3$, $SiO_2$, and $Pb_3O_4$ were also added to lower the sintering temperature of the ceramic. The prepared raw powders were mixed by using a ball mill for 24 hours. And then the mixed powders were calcinated for 2 hours at $800^{\circ}C$. The calcinated powders were again crushed with the ball mill for 72 hours. The final powders were pressed for making the shape of ${\emptyset}15\;mm$ disk. The disk-type samples were sintered at temperature range of $850{\sim}950^{\circ}C$. The crystal phases of the sintered specimens were perovskite structure without secondary phases. All of the measured electrical properties such as electromechanical coupling coefficients ($k_p$), mechanical quality factors ($Q_m$), and piezoelectric charge constants ($d_{33}$) were decreased with decreasing the sintering temperatures. The electrical properties measured at the sample sintered at $950^{\circ}C$ were 54% of $k_p$, 503 of $Q_m$, and 390 pC/N of $d_{33}$, respectively. These properties were considered to be fairly good for the application of multi-layered piezoelectric generators or actuators.

Microwave Dielectric Properties of BaNd2Ti5O14−BaO−B2O3-K2O-SiO2-xTiO2 Glass Composites (BaO-B2O3-SiO2-K2O-xTiO2 Glass의 첨가에 의한BaNd2Ti5O14-Glass 복합체의 마이크로파 유전특성)

  • Kim, Dong-Eun;Lee, Sung-Min;Kim, Hyung-Tae;Kim, Hyung-Sun
    • Journal of the Korean Ceramic Society
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    • v.44 no.2 s.297
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    • pp.110-115
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    • 2007
  • The effects of $TiO_2$ in the glasses on the shrinkage and dielectric properties of BNT-glass composites have been investigated. Without $TiO_2$ addition, BNT-glass composite showed two humps in the shrinkage curve, which are related with crystallization of $BaTi(BO_3)_2\;and\;Bi_4Ti_3O_{12}$. However, the increase of $TiO_2$ addition resulted in the decrease of 2nd hump in the shrinkage. The increased dielectric constant with $TiO_2$ addition might be due to the reduced crystallization of $Bi_4Ti_3O_{12}$. A dielectric constant of 52, a quality factor of 5088 GHz, and a temperature coefficient of resonant frequency of $-0.16ppm/^{\circ}C$ were obtained for a specimen containing $TiO_2$-added glasses, without sacrificing the benefits of high ${\varepsilon}_r$ and low TCF of BNT ceramics.