• Journal of the Korean Ceramic Society
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• v.50 no.2
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• pp.122-126
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• 2013

The surface roughness of the inner and outer surfaces of a tube is an important requirement for nuclear fuel cladding. When an inner SiC clad tube, which is considered as an advanced Pressurized Water Cooled Reactor (PWR) clad with a three-layered structure, is fabricated by Chemical Vapor Deposition (CVD), the surface roughness of the substrate, graphite, is an important process parameter. The surface character of the graphite substrate could directly affect the roughness of the inner surface of SiC deposits, which is in contact with a substrate. To evaluate the effects of the surface roughness changes of a substrate, SiC deposits were fabricated using different types of graphite substrates prepared by the following four polishing paths and heat-treatment for purification: (1) polishing with #220 abrasive paper (PP) without heat treatment (HT), (2) polishing with #220 PP with HT, (3) #2400 PP without HT, (4) polishing with #2400 PP with HT. The average surface roughnesses (Ra) of each deposited SiC layer are 4.273, 6.599, 3.069, and $6.401{\mu}m$, respectively. In the low pressure SiC CVD process with a graphite substrate, the removal of graphite particles on the graphite surface during the purification and the temperature increasing process for CVD seemed to affect the surface roughness of SiC deposits. For the lower surface roughness of the as-deposited interlayer of SiC on the graphite substrate, the fine controlled processing with the completed removal of rough scratches and cleaning at each polishing and heat treating step was important.

• Proceedings of the Optical Society of Korea Conference
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• 1990.02a
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• pp.264-268
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• 1990

A guided-wave electro-optic Mach-Zehnder interferometric modulator was fabricated on X-cut LiNbO3 . The channel waveguides were formed by proton diffusion with self-aligned SiO2-cladding. A mach-Zehnder interferometric modulator with arm lengths of 7mm has been fabricated and tested at 0.6328${\mu}{\textrm}{m}$. Its modulation depth with V$\pi$ of only 3.5V was 85% and the 3dB bandwidth was 1.6KHz. For high speed operation, the electrode dimension should be reduced to have smaller R, L, and C.

• Nuclear Engineering and Technology
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• v.48 no.3
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• pp.650-659
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• 2016

As a type of accident-tolerant fuel, fully ceramic microencapsulated (FCM) fuel was proposed after the Fukushima accident in Japan. The FCM fuel consists of tristructural isotropic particles randomly dispersed in a silicon carbide (SiC) matrix. For a fuel element with such high heterogeneity, we have proposed a two-temperature homogenized model using the particle transport Monte Carlo method for the heat conduction problem. This model distinguishes between fuel-kernel and SiC matrix temperatures. Moreover, the obtained temperature profiles are more realistic than those of other models. In Part I of the paper, homogenized parameters for the FCM fuel in which tristructural isotropic particles are randomly dispersed in the fine lattice stochastic structure are obtained by (1) matching steady-state analytic solutions of the model with the results of particle transport Monte Carlo method for heat conduction problems, and (2) preserving total enthalpies in fuel kernels and SiC matrix. The homogenized parameters have two desirable properties: (1) they are insensitive to boundary conditions such as coolant bulk temperatures and thickness of cladding, and (2) they are independent of operating power density. By performing the Monte Carlo calculations with the temperature-dependent thermal properties of the constituent materials of the FCM fuel, temperature-dependent homogenized parameters are obtained.

• Journal of the Korean Ceramic Society
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• v.38 no.11
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• pp.1037-1041
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• 2001

Silicon diosixde thick film using silica optical waveguide cladding was fabricated by Plasma Enhanced Chemical Vapor Deposition (PECVD) method, at a low temperature (32$0^{\circ}C$) and from (SiH$_4$+$N_2$O) gas mixtures. The effects of deposition parameters on properties of SiO$_2$thick films were investigated by variation of $N_2$O/SiH$_4$flow ratio and RF power. As the $N_2$O/SiH$_4$flow ratio decreased, deposition rate increased from 2.9${\mu}{\textrm}{m}$/h to maximum 10.1${\mu}{\textrm}{m}$/h. As the RF power increased from 60 W to 120 W, deposition rate increased (5.2~6.7 ${\mu}{\textrm}{m}$/h) and refractive index approached at thermally grown silicon dioxide (n=1.46).

• Korean Journal of Materials Research
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• v.12 no.3
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• pp.182-189
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• 2002

The Zr-0.2Sn-0.8Nb-X(X = 0~200ppm Si, 0~0.4wt.% Mo and Mn respectively) ingots for test specimens were manufactured by a vacuum arc re-melting method to find out the effect of Si, Mo, and Mn on the corrosion characteristics of the Zr-0.2Sn-0.8Nb alloy. After being heat-treated and rolled repeatedly out to be flat materials, they were finally heat-treated at 51$0^{\circ}C$ for three hours and used as the specimens for corrosion tests. The corrosion behavior of the specimens was studied in both 40$0^{\circ}C$ steam for 200 days and in aqueous 70 ppm LiOH solution at 36$0^{\circ}C$ for 90 days. From the study it was found that Si from 80 to 200 ppm contributed to increasing the corrosion resistance of Zr-0.2Sn-0.8Nb alloy in both steam and LiOH solution. This study also showed that Mn from 0.1 to 0.4% caused to go up the corrosion resistance, whereas Mo played a apart in improving the corrosion resistance only between 0.05 and 0.2 wt.%.

• Korean Journal of Materials Research
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• v.6 no.6
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• pp.585-588
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• 1996

여러 가지 Zr합금에서 생성되는 석출물의 특성을 규명하기 위하여 시편을 $600^{\circ}C$에서 1시간 동안 열처리 한후 EDX가 부착된 TEM을 이용하여 석출물에 관한 연구를 수행하였다. Zr1.4Sn0.2Fe0.1Cr 합금에서는 두 종류의 석출물이 생성되는데 하나는 석출물의 대부분을 차지하는 HCP 구조으 Zr(Cr, Fe)2 석출물로서 이는 둥근 형태를 유지하며 결정립내나 결정립계에 관계없이 널리 분산되어 분포된다. 다른 하나의 석출물은 극히 일부에서만 관찰되는 Zr2(Fe, Si)성분의 석출물로서 이는 tetragonal 구조를 갖는다. Zr0.5Nb0.6Fe0.3V 합금에서는 tetragonal (Zr, Nb)2(Fe, V) 석출물이 형성되며, Nb이 1.0 wt.% 첨가된 Zr1.0Nb0.6Fe0.3V 합금에서는 HCP 구조의 (Zr, Nb)(Fe, V)2 석출물과 BCC 구조인 $\beta$-Zr이 생성된다. Zr1.0Nb0.6Fe0.3V합금을 제외하고는 대부분의 합금에서 석출물은 약 1.0$\mu\textrm{m}$의 크기를 나타냈다. 합금 조성이 다를 경우에 석출물 크기와 35$0^{\circ}C$ 부식 특성과는 부식 특성과는 연관성이 없는 것로 나타났다.

• Journal of the Korean Ceramic Society
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• v.39 no.5
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• pp.479-483
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• 2002

Silicon dioxide thick film using silica optical waveguide cladding was fabricated by Plasma Enhanced Chemical Vapor Deposition(PECVD) method, at a low temperature ($320^{\circ}$C) and from $(SiH_4+N_2O)$ gas mixtures. The effects of deposition parameters on properties of $SiO_2$ thick films were investigated by variation of $N_2O/SiH_4$ flow ratio and RF power. After the deposition process, the samples were annealed in a furnace at $1150^{\circ}$C, in N2 atmosphere, for 2h. As the $N_2O/SiH_4$ flow ratio increased, deposition rate decreased from 9.4 to 2.9 ${\mu}m/h$. As the RF power increased, deposition rate increased from 4.7 to 6.9 ${\mu}m/h$. The thickness and the refractive index measurements were measured by prism coupler. X-ray Photoelectron Spectroscopy(XPS) and Fourier Transform-infrared Spectroscopy(FT-IR) were used to determine the chemical states. The cross-section of films was observed by Scanning Electron Microscopy(SEM).