• 한국세라믹학회지
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• 제48권6호
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• pp.621-624
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• 2011

In order to deposit a homogeneous and uniform ${\beta}$-SiC films by chemical vapor deposition, we constructed the phase-diagram of ${\beta}$-SiC over graphite and silicon via computational thermodynamic calculation considering pressure(P), temperature(T) and gas composition(C) as variables in $C_3H_8-SiCl_4-H_2$ system. During the calculation, the ratio of Cl/Si and C/Si is maintained to be 4 and 1, respectively, and H/Si ratio is varied from 2.67 to 15,000. The P-T-C diagram showed very steep phase boundary between SiC+C and SiC region perpendicular to H/Si axis and also showed SiC+Si region with very large H/Si value of ~6700. The diagram can be applied not only to the prediction of the deposited phase composition but to compositional variation due to the temperature distribution in the reactor. The P-T-C diagram could provide the better understanding of chemical vapor deposition of silicon carbide.

• 한국세라믹학회지
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• 제52권6호
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• pp.473-478
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• 2015

Green bodies of earthenware tile were prepared from a mixture of earthenware tile powder and SiC as forming agents by applying a conventional process. Granule powder for tile samples was prepared using the spray drying method with commercial earthenware raw material with a quantity of SiC of 0.3 wt%. The applied pressure was $250kg{\cdot}f/m^2$ and the firing temperature was $1050-1200^{\circ}C$. The effects of the SiC particle size and sintering temperature on the open porosity and total porosity were investigated and the correlative mechanism was also discussed. While total porosity was not significantly changed by decreasing the SiC particle size, the open porosity showed a gradual decrease, which represents an increase of the closed porosity. As the sintering temperature increased, coarsening was made among the pores due to excessive oxidation. The volume shrinkage and bending strength were demonstrated for the sintered tile samples. The sintered bulk density was also measured to determine the weight reduction value.

• Carbon letters
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• 제5권4호
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• pp.164-169
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• 2004

Carbon-ceramic composites refer to a special class of carbon based materials which cover the main drawbacks of carbon, particularly its proneness to air oxidation, while essentially retaining its outstanding properties. In the present paper, the authors report the results of a systematic study made towards the development of C-SiC-$B_4C$ composites, which involves the effects of compositional parameters, namely, carbon-to-ceramic and ceramic-to-ceramic ratios, on the oxidation behaviour as well as other characteristics of these composites. The C-SiC-$B_4C$ composites, heat-treated to $1400^{\circ}C$, have shown that their oxidation behaviour at temperatures of 800~$1200^{\circ}C$ depends jointly on the total ceramic content and the SiC : $B_4C$ ratio. Good compositions of C-SiC-$B_4C$ composites exhibiting zero weight loss in air at temperatures of 800~$1200^{\circ}C$ for periods of 4~9 h, have been identified. Composites with these compositions undergo a weight gain or a maximum weight loss of less than 3% during the establishment of a protective layer at the surface of carbon in a period of 1~6 h. Significant improvement in the strength of C-SiC-$B_4C$ composites has been observed which increases with an increase in the total ceramic content and also with an increase in the SiC : $B_4C$ ratio.

• 한국세라믹학회지
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• 제54권6호
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• pp.499-505
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• 2017

Flexible silicon carbide fibrous mats were fabricated by a combination of electrospinning and a polymer-derived ceramics route. Polycarbosilane was used as a solute with various solvent mixtures, such as toluene and dimethylformamide. The electrospun PCS fibrous mats were cured under a halogen vapor atmosphere and heat treated at $1300^{\circ}C$. The structure, fiber morphology, thermal behavior, and crystallization of the fabricated SiC fibrous mats were analyzed via scanning electron microscopy (SEM), X-ray diffraction (XRD), and thermal imaging. The prepared SiC fibrous mats were composed of randomly distributed fibers approximately $3{\mu}m$ in diameter. The heat radiation of the SiC fiber mats reached $1600^{\circ}C$ under microwave radiation at a frequency of 2.45 GHz.

• 한국분말재료학회지
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• 제21권6호
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• pp.467-472
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• 2014

RBSC (reaction-bonded silicon carbide) represents a family of composite ceramics processed by infiltrating with molten silicon into a skeleton of SiC particles and carbon in order to fabricate a fully dense body of silicon carbide. RBSC has been commercially used and widely studied for many years, because of its advantages, such as relatively low temperature for fabrication and easier to form components with near-net-shape and high relative density, compared with other sintering methods. In this study, RBSC was fabricated with different size of SiC in the raw material. Microstructure, thermal and mechanical properties were characterized with the reaction-sintered samples in order to examine the effect of SiC size on the thermal and mechanical properties of RBSC ceramics. Especially, phase volume fraction of each component phase, such as Si, SiC, and C, was evaluated by using an image analyzer. The relationship between microstructures and physical properties was also discussed.

• 한국세라믹학회지
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• 제49권6호
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• pp.523-527
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• 2012

Silicon carbide (SiC) has recently drawn an enormous amount of industrial interest due to its useful mechanical properties, such as its thermal resistance, abrasion resistance and thermal conductivity at high temperatures. In this study, RF thermal plasma (PL-35 Induction Plasma, Tekna CO., Canada) was utilized for the synthesis of high-purity SiC powder from an organic precursor (hexamethyldisilazane, vinyltrimethoxysilane). It was found that the SiC powders obtained by the RF thermal plasma treatment included free carbon and amorphous silica ($SiO_2$). The SiC powders were further purified by a thermal treatment and a HF treatment, resulting in high-purity SiC nano-powder. The particle diameter of the synthesized SiC powder was less than 30 nm. Detailed properties of the microstructure, phase composition, and free carbon content were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), a thermogravimetric (TG) analysis, according to the and Brunauer-Emmett-Teller (BET) specific surface area from N2 isotherms at 77 K.

• 한국세라믹학회지
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• 제36권10호
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• pp.1007-1015
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• 1999

The Si3N4 composites reinforced with carbon-coated SiC whiskers were fabricated by hot-pressing at 180$0^{\circ}C$ for 2 hours to examine the effects of carbon-coated whiskers on the mechanical properties of SiC whisker reinforced Si3N4 composites. The flexural strength of the Si3N4 composites and Si3N4 monolith respectively. The weak interfacial bond between carbon-coated SiC whiskers and Si3N4 matrix which enhances the crack deflection and whisker pull-out could contribute to the improvement of mechanical properties of the composites.

• 한국세라믹학회지
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• 제53권6호
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• pp.622-627
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• 2016

The effects of the debinding atmosphere on the properties of sintered reaction-bonded $Si_3N_4$ (SRBSN) ceramics prepared by tape casting method were investigated. Si green tape was produced from Si slurry of Si powder, using 11.5 wt% polyvinyl butyral as the organic binder and 35 wt% dioctyl phthalate as the plasticizer. The debinding process was conducted in air and $N_2$ atmospheres at $400^{\circ}C$ for 4 h. The nitridation process of the debinded Si specimens was performed at $1450^{\circ}C$, followed by sintering at $1850^{\circ}C$ and 20 MPa. The results revealed that the debinding atmosphere had a significant effect on $Si_3N_4$ densification and thermal conductivity. Owing to the higher sintered density and larger grain size, the thermal conductivity of $Si_3N_4$ specimens debinded in air was higher than that of the samples debinded in $N_2$. Thus, debinding in air could be suitable for the manufacture of high-performance SRBSN substrates by tape casting.

• 전기학회논문지
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• 제58권4호
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• pp.770-776
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• 2009

The composites were fabricated by adding 0, 15, 30, 45[vol.%] $ZrB_2$ powders as a second phase to SiC matrix. The physical, mechanical and electrical properties of electroconductive SiC ceramic composites by spark plasma sintering(SPS) were investigated. Reactions between ${\beta}$-SiC and $ZrB_2$ were not observed in the XRD and the phase analysis of the electroconductive SiC ceramic composites. The relative density of mono ${\beta}$-SiC, ${\beta}$-SiC+15[vol.%]$ZrB_2$, ${\beta}$-SiC+30[vol.%]$ZrB_2$ and ${\beta}$-SiC+45[vol.%]$ZrB_2$ composites are respectively 99.24[%], 87.53[%], 96.41[%] and 98.11[%] Phase analysis of the electroconductive SiC ceramic composites by XRD revealed mostly of ${\beta}$-SiC, $ZrB_2$ and weakly of $ZrO_2$ phase. The flexural strength showed the lowest of 114.44[MPa] for ${\beta}$-SiC+15[vol.%]$ZrB_2$ powders and showed the highest of 210.75[MPa] for composite no added with $ZrB_2$ powders at room temperature. The trend of the mechanical properties of the electroconductive SiC ceramic composites is accorded with the trend of the relative density. The electrical resistivity of the electroconductive SiC ceramic composites decreased with increased $ZrB_2$ contents. The electrical resistivity of mono ${\beta}$-SiC, ${\beta}$-SiC+15[vol.%]$ZrB_2$, ${\beta}$-SiC+30[vol.%]$ZrB_2$ and ${\beta}$-SiC+45[vol.%]$ZrB_2$ composites are respectively $4.57{\times}10^{-1},\;2.13{\times}10^{-1},\;2.68{\times}10^{-2}\;and\;1.99{\times}10^{-2}[{\Omega}{\cdot}cm]$ at room temperature. The electrical resistivity of mono ${\beta}$-SiC and ${\beta}$-SiC+15[vol.%]$ZrB_2$ are negative temperature coefficient resistance(NTCR) in temperature ranges from $25[^{\circ}C]\;to\; 100[^{\circ}C]$. The electrical resistivity of ${\beta}$-SiC+30[vol.%]$ZrB_2$ and ${\beta}$-SiC+45[vol.%]ZrB_2$ are positive temperature coefficient resistance(PTCR) in temperature ranges from $25[^{\circ}C]\;to\;100[^{\circ}C]$. It is convinced that ${\beta}$-SiC+30[vol.%]$ZrB_2$ composites by SPS for heater or ignitors can be applied.

• 한국결정성장학회지
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• 제27권1호
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• pp.57-63
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• 2017

High-purity ${\beta}-SiC$ powders for SiC single-crystal growth were synthesized by direct carbonization. The use of high-purity raw materials to improve the quality of a SiC single crystal is important. To grow SiC single crystals by the PVT method, both the particle size and the packing density of the SiC powder are crucial factors that determine the sublimation rate. In this study, we tried to produce high-purity ${\beta}-SiC$ powder with large particle sizes and containing low silicon by introducing a milling step during the direct carbonization process. Controlled heating improved the purity of the ${\beta}-SiC$ powders to more than 99 % and increased the particle size to as much as ${\sim}100{\mu}m$. The ${\beta}-SiC$ powders were characterized by SEM, XRD, PSA, and chemical analysis to assess their purity. Then, we conducted single-crystal growth experiments, and the grown 4H-SiC crystals showed high structural perfection with a FWHM of about 25-48 arcsec.