• Journal of The Geomorphological Association of Korea
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• v.26 no.4
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• pp.67-79
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• 2019

This study documents the level of paleo-shoreline and the timing of formation of the lowest marine terrace (1st terrace) distributed in Dadaepo, Busan, South Korea. In the study area, the elevation of paleo-shoreline of the 1st terrace is clearly identified as 5 meters above mean high tide based on the elevation of wave-cut platforms and the elevation of boundary between marine and terrestial sediments. This is well consistent with the fact that are found along the Southern coast of the Korean Peninsula including Daepo-dong, Sacheon-si. The timing of formation of the 1st terrace in Dadaepo is confirmed to have been deposited around 70,000~80,000 years BP (MIS 5a) according to OSL and IRSL dating ages. However, because the formation age of the 1st terrace in Sacheon-si Daepo-dong (Southerm coast) and Pohang-si Umok-ri (Eastern coast) previously identified as about 90,000~100,000 years BP (MIS 5c), further discussion of what is needed. Possibly, it can be interpreted that the sub-interglacial (MIS 5a and 5c) sea-level records during the last interglacial period are likely to be selective on land depending on regions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.11
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• pp.900-904
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• 2011

In this paper, we investigated an anomalous hump phenomenon under the positive bias stress in p-type LTPS TFTs. The devices with inferior electrical performance also show larger hump phenomenon. which can be explained by the sub-channel induced from trapped electrons under thinner gate oxide region. We can confirm that the devices with larger hump have larger interface trap density ($D_{it}$) and grain boundary trap density ($N_{trap}$) extracted by low-high frequency capacitance method and Levinson-Proano method, respectively. From the C-V with I-V transfer characteristics, the trapped electrons causing hump seem to be generated particularly from the S/D and gate overlapped region. Based on these analysis, the major cause of an anomalous hump phenomenon under the positive bias stress in p-type poly-Si TFTs is explained by the GIDL occurring in the S/D and gate overlapped region and the traps existing in the channel edge region where the gate oxide becomes thinner, which can be inferred by the fact that the magnitude of the hump is dependent on the average trap densities.

• Journal of the Korean Vacuum Society
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• v.12 no.3
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• pp.174-181
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• 2003

Ta diffusion barriers have been deposited on Si (100) substrate by applying a negative substrate bias voltage. The effect of the substrate bias voltage on the properties of the Ta films was investigated. In the case of the Ta films deposited without the substrate bias voltage, a columnar structure and small grains were observed distinctly, and the electrical resistivity of the deposited Ta films was very high (250 $\mu\Omega$cm). By applying the substrate bias voltage, no clear columnar structure and grain boundary were observed. The resistivity of the Ta films decreased remarkably and at a bias voltage of -125 V, reaching a minimum value of 40 $\mu\Omega$cm, which is close to that of Ta bulk (13 $\mu\Omega$cm). The thermal stability of Cu(100 mm)/Ta(50 mm)/Si structures was evaluated after annealing in H2 atmosphere for 60 min at various temperatures. The Ta films deposited by applying the substrate bias voltage were found to be stable up to $600^{\circ}C$, while the Ta films deposited without the substrate bias voltage degraded at $400^{\circ}C$.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1885-1887
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• 1999

본 연구에서는 $BaTiO_3$를 기본조성으로하는 반도성 세라믹스인 PTC 써미스터에 $Nb_2O_5$을 미량 첨가하여 미세구조 및 PTCR의 전기적 특성에 대해서 연구하였다. 또한 복소 임피던스 측정을 통하여 $Nb_2O_5$ 첨가에 따른 grain, grain boundary 저항변화에 대해서도 고찰하였다. $(Ba_{0.9}Sr_{0.05}Ca_{0.05})TiO_3-0.01SiO_2-0.001MnCO_3$를 기본조성으로 하여 $Nb_2O_5$ 첨가량을 $0.15{\sim}0.2mol%$까지 변화시켰으며 소결조건은 소결온도 $1350^{\circ}C$, 2h 유지하였으며 냉각속도는 $100^{\circ}C/h$로 하였다 첨가된 Nb의 양이 증가할수록 grain의 크기는 점차로 작아졌으며 상온저항과 peak 저항이 함께 증가하였다. 0.15mol% 첨가된 시편의 경우 상온저항은 $19[\Omega]$이었으며 peak 저항은 $5{\times}10^6[{\Omega}]$정도가 되었다.

• Journal of Information Processing Systems
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• v.1 no.1 s.1
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• pp.36-40
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• 2005

TRISO (Tri-Isotropic)-coated fuel particle is widely applied due to its higher stability at high temperature and its efficient retention capability for fission products in the HTGR (high temperature gas-cooled reactor), one of the highly efficient Generation IV reactors. The typical ball-type TRISO-coated fuel particle with a diameter of about 1 mm is composed of a nuclear fuel particle as a kernel and of outer coating layers. The coating layers consist of a buffer PyC, inner PyC, SiC, and outer PyC layer. In this study, a digital image processing algorithm is proposed to automatically measure the thickness of the coating layers. An FBP (filtered backprojection) algorithm was applied to reconstruct the CT image using virtual X-ray radiographic images for a simulated TRISO-coated fuel particle. The automatic measurement algorithm was developed to measure the coating thickness for the reconstructed image with noises. The boundary lines were automatically detected, then the coating thickness was circularly by the algorithm. The simulation result showed that the measurement error rate was less than 1.4%.

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.267-272
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• 2000

Electroplating Cu was deposited on Si(100) wafer after seed Cu was deposited by sputtering first. TaN was deposited as a diffusion barrier before depositing the seed Cu. Electroplating Cu thin films show highly (111)-oriented microstructure for both before and after annealing at $450^{\circ}C$ for 30min and no copper silicide was detected in the same samples, which indicates that TaN barrier layer blocks well the Cu diffusion into silicon substrate. After annealing the electroplating Cu film up to $450^{\circ}C$, the Cu film became columnar from non-columnar, its grain size became larger about two times, and also defects density of stacking faults, twins and dislocations decreased greatly. Thus the heat treatment will improve significantly electromigration property caused by the grain boundary in the Cu thin films.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 1998.10a
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• pp.67-74
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• 1998

Two kinds of polished and unpolished freestanding films prepared by DC plasma CVD method were impacted by SiC particles to understand erosion mechanism. Erosion damage caused by solid impact was characterized by surface profilometer, scanning electron microscopy and Raman spectroscopy. Gradually decrease of surface roughness and sharp reduction of crystallinity for unpolished CVD films were observed with increasing erosion time. It was found that smaller grains of the diamond were removed in early stage of erosion process and larger grains were eroded with further impingement. By introduction of re-growth method on polished diamond, further understanding of erosion mechanism was achieved. Most of the surface fractures were initiated at the grain boundary.

• Journal of the Korean Ceramic Society
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• v.31 no.1
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• pp.88-96
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• 1994

Hot filament-assisted CVD was carried out to deposit diamond films on Si(100) substrate at 90$0^{\circ}C$ using a 1% CH4-H2 mixture gas. Deposition was made at various conditions of mass flow rate of the feed gas (30~1000 sccm), pressure (2.5~300 Torr), and filament-substrate distance (4~15 mm), and the deposited films were characterized by SEM, XRD, and Raman spectroscopy. As the flow rate increases, the growth rate also increased but the crystallinity of the film was degraded. A longer filament-substrate distance simply caused both the growth rate and the crystallinity to become poorer. On the other hand, the pressure variation resulted in a maximum growth rate of 2.6 ${\mu}{\textrm}{m}$/hr at 10 Torr and the best film quality around 50 Torr, exhibiting an optimum condition. The observed trends were interpreted in terms of the flow velocity-dependent pyrolysis reaction efficiency and mass transport through the boundary layer.

• Journal of Korea Foundry Society
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• v.3 no.2
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• pp.83-91
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• 1983

In this paper analytical and numerical methods fur analysis of solidification of castings are described, and the matrix method, one of numerical method, where the nodal point is designated on the element boundary was adapted. The cooling curve obtained by experimental values, when cast steel (0.29%C. 0.62%Si) was poured into $CO_2$ mold, is compared with that of computed values by exploiting computer (V77-600 Data Proceeding System, UNIVAC). The computed value is nearly approximation to the experimental. But the computed value shows a tendency that is a little higher than the experimental in solid-liquid coexisting temperature ranges and much lower than the experimental after solidification. It is considered to result from the lacks and difficulties of ultimately appropriate adaptation of various physical properties and also air cap between castings and mold.

• Korean Journal of Materials Research
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• v.9 no.1
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• pp.35-41
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• 1999

In this study we investigated the effects of process variables on the bond strength, and its dependency upon the interfacial chemistry when the joined $ZrO_2$ toughened $Na\beta$"-alumina to $\alpha$-alumina using B$_2$$O_3$-$SiO_2$-Al$_2$$O_3$-CaO glass sealant. We observed that bond strength is mainly determined by the strength of the glass, which, in turn, depends on the glass composition established after joining reaction. Joining at $950^{\circ}C$ for 15min yielded the highest average bond strength of 66MPa. Different types of interfacial reaction seem to occur at each interface. After joining at $950^{\circ}C$ for 15min we found that Ca and Si diffuse much deeper(~15$\mu\textrm{m}$) into the $\beta$"-alumina composite than into the $\alpha$-alumina(<1$\mu\textrm{m}$) as a result of ion exchange reaction and more effective grain boundary diffusion. Thermal expansion coefficient of the glass was found to have changed more closely to those of the $\beta$"-alumina composite and $\alpha$-alumina, which put the glass under a slight compressive stress.ressive stress.