• Journal of Sensor Science and Technology
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• v.19 no.1
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• pp.31-35
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• 2010

High temperature micro pressure sensors were fabricated by using polycrystalline 3C-SiC piezoresistors grown on oxidized SOI substrates by APCVD. These have been made by bulk micromachining under $1{\times}1mm^2$ diaphragm and Si membrane thickness of $20{\mu}m$. The pressure sensitivity of implemented pressure sensors was 0.1 mV/$V{\cdot}bar$. The nonlinearity and the hysteresis of sensors were ${\pm}0.44%{\cdot}FS$ and $0.61%{\cdot}FS$. In the temperature range of $25^{\circ}C{\sim}400^{\circ}C$ with 5 bar FS, TCS (temperature coefficient of sensitivity), TCR (temperature coefficient of resistance), and TCGF (temperature coefficient of gauge factor) of the sensor were -1867 ppm/$^{\circ}C$, -792 ppm/$^{\circ}C$, and -1042 ppm/$^{\circ}C$, respectively.

• Bulletin of the Korean Chemical Society
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• v.23 no.6
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• pp.845-851
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• 2002

The synthesis of the intramolecular donor - stabilized silyl and germyl complexes of the type ($Cab^c.p) MMe_2X$ (2a:M=Si, X=Cl;2b;M= Ge, X=Cl;2e;M=Si,X=H) was achieved by the reaction of $LiCab^c,p$ (1) with $Me_2SiClX$ and $Me_2GeCl_2$ respectively. The intramolecular M←P interacion in 2a-2c is provided by $^1H$, $13^C.$, $31^P$ and $29^Si$ NMR spectroscopy. The salt elimination reactions of dichlorotetramethyldisilane and -digermane with 1 afforded the $bis(\sigma-carboranylphosphino)disilane$ and disgermane [$(Cab^C.P)MMe_2]_2(4a;M$ = Si;4b: M=Ge). The oxidative addition reaction of 4a-4b with $pd_2(dba)_3CHCl_3afforded$ the bis(silyl)-and bis(germyl)-palladium complexes. The chloro-bridged dipalladium complexes were obtained by the reaction of 2a-2b with $pd_2(dba)_3CHCl_3$ The crystal structures of 5a and 7b were determined by X-ray structural studies.

• Korean Journal of Crystallography
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• v.1 no.1
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• pp.19-28
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• 1990

6H-SiC is a promising material (Eg=3.0eV) for blue light-emitting doide and high-temperature semiconducting device. In the experiment, single crystals of a-SiC have been grown by the sublimation method to fabricate blue light~emitting diode. During the growth of a-SiC single crystals, a temperature Vadient, yonh temperature and pressure ranges were kept 44℃/cm , 1800-1990℃ and 50-1000 mTorr, respectively. Single crystals obtained in Acheson furnace were used as seed crystals. Polarizing microscopy and back-reflection X-ray Laue diffraction showed that the a-SiC crystal was epitaxially and on the seed crytal. It was found by XRD analysis that when other growth conditions were the same, a-SiC was grown at the temperature above 1840℃ and 3C-SiC was gown at lower temperature or under low supersaturation of vapor. The carrier type. concentration and mobility were measured be hole(p-type), 7.6x1014cm-3 and 19cm2V-1sec-1, respectively, by van der Pauw method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.387-388
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• 2008

High temperature micro pressure sensors were fabricated by polycrystalline (poly) 3C-SiC piezoresistors formed by oxidized SOI substrates with APCVD. These have been designed by bulk micromachining below $1{\times}1mm^2$ diaphragm and Si membrane $20{\mu}m$ thick. The pressure sensitivity of fabricated pressure sensor was 0.1 mV/Vbar. The non-linearity of sensor was ${\pm}0.44%$ FS and the hysteresis was 0.61% FS.TCS of pressure sensor was -1867 ppm/$^{\circ}C$, its TCR was -792 ppm/$^{\circ}C$, and TCGF to 5 bar was -1042 ppm/$^{\circ}C$ from 25 to $400^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.31 no.9
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• pp.1021-1029
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• 1994

SiC ultrafine particles of 1, 10, 20 and 30 vol% were dispersed in $\alpha$-Si3N4 matrix and hot-pressed under the condition of 30 MPa at 1800 and 190$0^{\circ}C$ respectively. Physical, mechanical properties and microstructures of sintered Si3N4-SiC nanocomposites were investigated. Flexural strength and density of Si3N4-10 vol% SiC nanocomposites hot-pressed at 190$0^{\circ}C$ represented the 1002 MPa and 97.9%T.D respectively, and it was confirmed as a remarkable improvement of 67% compared to Si3N4 monolith. Fracture toughness was shown as 7.2 MPa.m1/2 when the same composition was hot pressed at 180$0^{\circ}C$. This effect was supposed to be due to the improvement of microstructure by the adequate suppression of the excessive growth of Si3N4 grain with SiC nano-particles.

• Journal of Sensor Science and Technology
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• v.18 no.4
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• pp.307-310
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• 2009

This paper describes the formation of porous 3C-SiC by anodization. 3C-SiC thin films were deposited on p-type Si(100) substrates by APCVD using HMDS(Hexamethyildisilane: $Si_2(CH_3)_6$). UV-LED(380 nm) was used as a light source. The surface morphology was observed by SEM and the pore size was increased with increase of current density. Pore diameter of 70 $\sim$ 90 nm was achieved at 7.1 mA/cm$^2$ current density and 90 sec anodization time. FT-IR was conducted for chemical bonding of thin film and porous 3C-SiC. The Si-H bonding was observed in porous 3C-SiC around wavenumber 2100 cm$^{-1}$. PL shows the band gap enegry of thin film(2.5 eV) and porous 3C-SiC(2.7 eV).

• Journal of Powder Materials
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• v.21 no.6
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• pp.434-440
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• 2014

Silicon carbide(SiC) layer is particularly important tri-isotropic (TRISO) coating layers because it acts as a miniature pressure vessel and a diffusion barrier to gaseous and metallic fission products in the TRISO coated particle. The high temperature deposition of SiC layer normally performed at $1500-1650^{\circ}C$ has a negative effect on the property of IPyC layer by increasing its anisotropy. To investigate the feasibility of lower temperature SiC deposition, the influence of deposition temperature on the property of SiC layer are examined in this study. While the SiC layer coated at $1500^{\circ}C$ obtains nearly stoichiometric composition, the composition of the SiC layer coated at $1300-1400^{\circ}C$ shows discrepancy from stoichiometric ratio(1:1). $3-7{\mu}m$ grain size of SiC layer coated at $1500^{\circ}C$ is decreased to sub-micrometer (< $1{\mu}m$) $-2{\mu}m$ grain size when coated at $1400^{\circ}C$, and further decreased to nano grain size when coated at $1300-1350^{\circ}C$. Moreover, the high density of SiC layer (${\geq}3.19g/cm^3$) which is easily obtained at $1500^{\circ}C$ coating is difficult to achieve at lower temperature owing to nano size pores. the density is remarkably decreased with decreasing SiC deposition temperature.

• Journal of the Korean Ceramic Society
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• v.29 no.11
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• pp.877-887
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• 1992

Tetragonal zirconia powder with 3 mol% Y2O3 mas mixed with up to 30 vol% of ${\beta}$-SiC powders, and the mixtures were hot-pressed at 1500$^{\circ}C$ for 60 min under a pressure of 30 MPa in Ar atmosphere. Flexural strength and fracture toughness were measured at room-and high-temperature (1000$^{\circ}C$). Evolution of microstructure was also conducted to investigate the effects of SiC addition on the properties of 3Y-TZP ceramics. Average grain size of the composites was about 0.5 $\mu\textrm{m}$, and decreased with SiC addition. Both room- and high-temperature mechanical properties of the composites were improved with SiC content. Particularly, high-temperature strength and fracture toughness of 3Y-TZP/30v/o SiC composite were twice as high as those of 3Y-TZP. The hardness of the composites also increased with SiC content and reached maximum value at 3Y-TZP/30v/o SiC composite.

• Tribology and Lubricants
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• v.4 no.2
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• pp.36-43
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• 1988

Titanium carbide(TiC) and titanium nitride(TiN) flims were deposited on $Si_3N_4$-TiC composite cutting tools by chemical vapor deposition(CVD) using $TiCl_4-CH_4-H_2$ and $TiCl_4-H_2-N_2$ gas mixtures, respectively. The nonmetal to metal ratio of deposit increases with increasing $m_{C/Ti}$(mole ratio of CH$_4$ to TiCl$_4$ in the input) for TiC coatings and $m_{N/Ti}$(mole ratio of N$_2$ to TiCl$_4$ in the input) for TiN coatings. The nearly stoiahiometric films could be obtained under the deposition condition of $m_{C/Ti}$ between 1.15 and 1.61 for TiC, and that of $m_{N/Ti}$ between 25 and 28 for TiN. Also maximum microhardness of the coatings can be obtained in these ranges. The interfacial region of TiC coatings on $Si_3N_4$-TiC ceramics is wider than that of TiN coatings according to Auger depth profile analysis, which indicates good interfacial bonding for TiC. Experimental results show that TiC coatings have an randomly equiaxed structure and Columnar structure with(220) preferred orientation can be obtained for TiN coatings. And, multilayer coatings have a dense and equiaxed structure.

• Journal of the Korean Ceramic Society
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• v.37 no.9
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• pp.864-870
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• 2000

알루미나 단미의 기계적 성질을 향상시키고자, 185$0^{\circ}C$에서 1시간 동안 열간 가압소결에 의하여 SiC 입자 및 SiC 휘스커를 단독으로 혹은 동시에 첨가한 알루미나 복합재료를 제조하여 기계적 성질과 미세조직을 조사하였다. 20vol%의 SiC 입자 혹은 휘스커 첨가에 의하여, 알루미나 복합재료의 강도는 단미의 360 MPa에서 각각 640 MPa, 650 Mpa로 향상되었다. 20vol%의 SiC 입자 혹은 휘스커를 첨가한 복합재료의 파괴인성은 각각 3.5 MPa.m$^{1}$2/, 5.5 MPa.m$^{1}$2/를 나타내었다. 20vol%의 SiC 휘스커와 2vol%의 SiC 입자를 동시 첨가한 다중강화 복합재료의 강도와 파괴인성은 각각 790 MPa, 5.0 MPa.m$^{1}$2/ 로 증가하였다. 이와 같이 알루미나 단미에 비해 강도 및 파괴인성이 향상된 것은 입자에 의한 결정립 미세화 효과와 휘스커에 의한 균열편향, pull-out의 영향으로 생각된다.