• 한국재료학회지
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• 제10권7호
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• pp.489-492
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• 2000

0.5%C-25.0%Cr-1.0%Si(합금1), 0.5%C-5.0%Cr-1.0%Si(합금2) 및 2.0%C-5.0%Cr-1.0%Si(합금3)의 3종류 크롬백주철에 있어서 기지조직 및 탄화물에 분푀도는 Cr 및 Si의 거동을 연구하였다. 15kg 용량의 고주파 유도용해로에 선철, 고철, Fe-Cr, Fe-Si 등을 장입시켜 용해시킨후 슬래그를 제거시키고 $1550^{\circ}C$에서 펩 주형에 주입시킨후 실온까지 냉각시켜 SEM으로 응고조직을 관찰하였으며 EPMA분석을 통하여 Cr 및 Si 의 분포거동을 관찰하였다. 합금1의 경우 초정으로 $\delta$페라이트가 정출후 $\delta$페라이트와 용액의 입계에서 $\delta$페라이트와 $M_7C_3$탄화물이 공정으로 정출하였으며 합금2의 경우 용액에서 초정으로 거의 $\delta$페라이트가 정출된 수 극히 일부분만이 $\delta$페라이트와 $M_7C_3$탄화물의 공정으로 정출하였다. 반면 합금 3의 경우 오스테나이트가 초정으로 정출된 후 오스테나이트와 $M_3C$탄화물이 공정으로 정출하였다. Cr은 주로 $M_7C_3$ 및 $M_3C$탄화물에 , 그리고 Si는 기지조직에 선택적으로 분배되었으며 Cr의 기지조직에 대한 분배계수는 0.56-0.68, 그리고 Si는 1.12-1.28의 범위에 걸쳐있었다. 또한 Cr의 기지조직에 대한 분배계수는 C 함량이 2.0%일때가 0.5%의 경우보다 낮았으며 $M_7C_3$탄화물내의 Cr 함량은 Cr함량이 25.0% 일때가 5.0%의 경우보다 높은값을 나타내었다. 나타내었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.18-19
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• 2008

Polycrystalline(poly) 3C-SiC film is a promising structural material for M/NEMS used in harsh environments, bio and fields. In order to realize poly 3C-SiC based M/NEMS devices, the electrical properties of poly 3C-SiC film have to be optimized. The n-type poly 3C-SiC thin film is deposited by APCVD using HMDS$(Si_2(CH_3)_6)$ as single precursor and are in-situ doped using N2. Resistivity values as low as 0.014 $\Omega$cm were achieved. The carrier concentration increased with doping from $3.0819\times10^{17}$ to $2.2994\times10^{19}cm^{-3}$ and electronicmobility increased from 2.433 to 29.299 $cm^2/V{\cdot}s$.

• 한국세라믹학회지
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• 제39권4호
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• pp.413-419
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• 2002

$Al_2O_3$/TiC/SiC, $Al_2O_3$/SiC 및 $Al_2O_3$/TiC 복합체들을 고온가압소결로 제조하여 이들의 균열저항거동과 기계적 성질을 비교해 보았다. $Al_2O_3$에 $0.8{\mu}m$의 TiC가 30vol% 첨가된 $Al_2O_3$/TiC는 단일체 $Al_2O_3$와 비슷한 균열저항거동을 보이며 파괴인성은 전반적으로 10% 이내의 증가를 보이는데 그쳤지만 강도는 약 30% 증가하였다. $Al_2O_3$에 $3{\mu}m$ SiC가 30vol% 첨가된 $Al_2O_3$/SiC는 SiC 입자의 균열 접속으로 인해 증가하는 균열저항거동을 뚜렷이 보이면서 파괴인성이 긴 균열에서 약 75% 증가하였으나 강도는 다소 감소했다. $Al_2O_3$/TiC에 SiC 입자가 30 vol% 첨가된 $Al_2O_3$/TiC/SiC 복합체의 경우 단일체 $Al_2O_3$에 비해 긴 균열 거리에서 파괴인성이 50% 이상 증가된 6.6 MP${\cdot}\sqrt{m}$에 이르렀으며 강도 값도 약 20% 상승하였다. 그러나 큰 SiC 입자의 첨가로 인해 TiC 입자만 첨가된 $Al_2O_3$/TiC 복합체보다는 강도가 다소 낮았다. 또한 SiC 입자만 첨가된 $Al_2O_3$/SiC 복합체보다는 파괴인성이 다소 낮았는데, 이는 작은 TiC 입자들이 SiC 입계를 거칠게 만들어 균열접속을 일으키는 SiC 입자의 뽑힘 현상을 방해하였기 때문이다.

• 한국세라믹학회지
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• 제36권11호
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• pp.1261-1265
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• 1999

Effect of SiC particle size of the densification of Al2O3-SiC composite during pressureless sintering was investigated. Two types of SiC powders having average particle size of 0.15${\mu}{\textrm}{m}$ and 3${\mu}{\textrm}{m}$ were used. Densification rate of the specimen containing 0.15${\mu}{\textrm}{m}$ SiC particles was slower than that of the specimen containg 3${\mu}{\textrm}{m}$ SiC particles. Although the relative density of the specimen containing 0.15${\mu}{\textrm}{m}$ SiC particles was below 90% of theoretical density after sintering at 155$0^{\circ}C$ the complete closure of open pores occurred. Therefore full densification could be obtained by subsequent HIP. On the other hand in the specimen containing 3${\mu}{\textrm}{m}$ SiC particles the complete closed pore was observed at 95% of theoretical density. Such a fast pore closure in the specimen containing 0.15${\mu}{\textrm}{m}$ SiC particles is likely to occur as a result of dense reaction layer formation on the specimen surface which is attributed to the high reactivity of small size particles with sintering atmosphere.

• 센서학회지
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• 제16권2호
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• pp.85-90
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• 2007

This paper presents the growth conditions and characteristics of polycrystalline 3C-SiC (silicon carbide) thin films for M/NEMS applications related to harsh environments. The growth of the 3C-SiC thin film on the oxided Si wafers was carried out by APCVD using HMDS (hexamethyildisilane: $Si_{2}(CH_{3})_{6})$ precursor. Each samples were analyzed by XRD (X-ray diffraction), FT-IR (fourier transformation infrared spectroscopy), RHEED (reflection high energy electron diffraction), GDS (glow discharge spectrometer), XPS (X-ray photoelectron spectroscopy), SEM (scanning electron microscope) and TEM (tunneling electro microscope). Moreover, the electrical properties of the grown 3C-SiC thin film were evaluated by Hall effect. From these results, the grown 3C-SiC thin film is very good crystalline quality, surface like mirror and low defect. Therefore, the 3C-SiC thin film is suitable for extreme environment, Bio and RF M/NEMS applications in conjunction with Si fabrication technology.

• 한국세라믹학회지
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• 제30권12호
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• pp.999-1006
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• 1993

Si3N4(p)-SiC(p) composites were prepared by gas pressure sintering at 190$0^{\circ}C$ for 1 hour. $\alpha$-SiC with average particle size of 0.48${\mu}{\textrm}{m}$ were dispersed from zero to 50vol% in $\alpha$-Si3N4 with average particle size of 0.5${\mu}{\textrm}{m}$. Y2O3-Al2O3 system was used as sintering aids. When 10vol% of SiC was added to Si3N4, optimum mechanical properties were observed; relative density of 98.8%, flextural strength of 930MPa, fracture toughness of 5.9MPa.m1/2 and hardness value of 1429kg/$\textrm{mm}^2$. Grain growth of $\beta$-Si3N4 was inhibited as the amount of added SiC was increased. SiC particles were found inside the $\beta$-Si3N4 intragrains in case of 10, 20 and 30vol%SiC added composites.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.217-217
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• 2009

This paper describes the characteristics of polycrystalline 3C-SiC doubly clamped beam micro resonators. The polycrystalline 3C-SiC doubly clamped beam resonators with 60 ~ 100 ${\mu}m$ lengths, $10\;{\mu}m$ width, and $0.4\;{\mu}m$ thickness were fabricated using a surface micromachining technique. Polycrystalline 3C-SiC micro resonators were actuated by piezoelectric element and their fundamental resonant frequency was measured by a laser vibrometer in vacuum at room temperature. For the 60 ~ 100 ${\mu}m$ long cantilevers, the fundamental frequency appeared at 373.4 ~ 908.1 kHz. The resonant frequencies of doubly clamped beam with lengths were higher than simulated results because of tensile stress. Therefore, polycrystalline 3C-SiC doubly clamped beam micro resonators are suitable for RF MEMS devices and bio/chemical sensor applications.

• 센서학회지
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• 제17권5호
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• pp.325-328
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• 2008

This paper describes the electrical properties of poly (polycrystalline) 3C-SiC thin films with different nitrogen doping concentrations. In-situ doped poly 3C-SiC thin films were deposited by APCVD at $1200^{\circ}C$ using HMDS (hexamethyildisilane: $Si_2(CH_3)_6)$) as Si and C precursor, and $0{\sim}100$ sccm $N_2$ as the dopant source gas. The peak of SiC is appeared in poly 3C-SiC thin films grown on $SiO_2/Si$ substrates in XRD(X-ray diffraction) and FT-IR(Fourier transform infrared spectroscopy) analyses. The resistivity of poly 3C-SiC thin films decreased from $8.35{\Omega}{\cdot}cm$ with $N_2$ of 0 sccm to $0.014{\Omega}{\cdot}cm$ with 100 sccm. The carrier concentration of poly 3C-SiC films increased with doping from $3.0819{\times}10^{17}$ to $2.2994{\times}10^{19}cm^{-3}$ and their electronic mobilities increased from 2.433 to $29.299cm^2/V{\cdot}S$, respectively.

• 센서학회지
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• 제16권3호
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• pp.197-201
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• 2007

The magnetron reactive ion etching (RIE) characteristics of polycrystalline (poly) 3C-SiC grown on $SiO_{2}$/Si substrate by APCVD were investigated. Poly 3C-SiC was etched by $CHF_{3}$ gas, which can form a polymer as a function of side wall protective layers, with additive $O_{2}$ and Ar gases. Especially, it was performed in magnetron RIE, which can etch SiC at a lower ion energy than a commercial RIE system. Stable etching was achieved at 70 W and the poly 3C-SiC was undamaged. The etch rate could be controlled from $20\;{\AA}/min$ to $400\;{\AA}/min$ by the manipulation of gas flow rates, chamber pressure, RF power, and electrode gap. The best vertical structure was improved by the addition of 40 % $O_{2}$ and 16 % Ar with the $CHF_{3}$ reactive gas. Therefore, poly 3C-SiC etched by magnetron RIE can expect to be applied to M/NEMS applications.

• 센서학회지
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• 제16권6호
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• pp.457-461
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• 2007

This paper describes the characteristics of poly (polycrystalline) 3C-SiC grown on $SiO_{2}$ and AlN substrates, respectively. The crystallinity and the bonding structure of poly 3C-SiC grown on each substrate were investigated according to various growth temperatures. The crystalline quality of poly 3C-SiC was improved from resulting in decrease of FWHM (full width half maximum) of XRD and FT-IR by increasing the growth temperature. The minimum growth temperature of poly 3C-SiC was $1100^{\circ}C$. The surface chemical composition and the electron mobility of poly 3C-SiC grown on each substrate were investigated by XPS and Hall Effect, respectively. The chemical compositions of surface of poly 3C-SiC films grown on $SiO_{2}$ and AlN were not different. However, their electron mobilities were $7.65{\;}cm^{2}/V.s$ and $14.8{\;}cm^{2}/V.s$, respectively. Therefore, since the electron mobility of poly 3C-SiC films grown on AlN buffer layer was two times higher than that of 3C-SiC/$SiO_{2}$, a AlN film is a suitable material, as buffer layer, for the growth of poly 3C-SiC thin films with excellent properties for M/NEMS applications.