• Carbon letters
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• 제8권2호
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• pp.91-94
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• 2007

The application of Carbon and graphite based materials in unprotected environment is limited to a temperature of $450^{\circ}C$ or so because of their susceptibility to oxidation at this temperature and higher. To over come these obstacles a low cost chemical vapour reaction process (CVR) was developed to give crystalline and high purity SiC coating on graphite and isotropic C/C composite. CVR is most effective carbothermal reduction method for conversation of a few micron of carbon layer to SiC. In the CVR method, a sic conversation layer is formed by reaction between carbon and gaseous reagent silicon monoxide at high temperature. Characterization of SiC coating was carried out using SEM. The other properties studied were hardness density and conversion efficiency.

• 한국수소및신에너지학회논문집
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• 제25권1호
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• pp.28-38
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• 2014

The organic-inorganic composite membrane in polymer exchange membrane fuel cells (PEMFCs) have several fascinating technological advantages such as a proton conductivity, thermal stability and mechanical properties. As the inorganic filler, silicon carbide (SiC) fiber have been used in various fields due to its unique properties such as thermal stability, conductivity, and tensile strength. In this study, composite membrane was successfully fabricated by modified-silicon carbide fiber. Modified process, as a novel process in SiC, takes reaction by phosphoric acid after oxidation process (generated homogeniusly $SiO_2$ layer on SiC fiber). The mechanical property which was conducted by tensile test of the 5wt% modified-$SiO_2@SiCf$ composite membrane was better than that of Aquivion casting membrane as well as ion cxchange capacity(IEC) and proton conductivity. In addition, the single cell performance was observed that the 5wt% modified-$SiO_2@SiCf$ composite membrane was approximately $0.2A/cm^2$ higher than that of a Aquivion casting electrolyte membrane and electrochemical impedance was improved with the charge transfer resistance and membrane resistance.

• Advances in nano research
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• 제12권2호
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• pp.213-221
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• 2022

Silicon carbide (SiC) is a binary carbon-silicon compound. In its two-dimensional form, monolayer SiC is composed of a monolayer carbon and silicon atoms constructed as a honeycomb lattice. SiC has recently been receiving increasing attention from researchers owing to its intriguing electronic properties. In this present work, SiC nanoribbons (SiCNRs) are modelled and simulated to obtain accurate electronic properties, which can further guide fabrication processes, through bandgap engineering. The primary objective of this work is to obtain the electronic properties of monolayer SiCNRs by applying numerical computation methods using nearest-neighbour tight-binding models. Hamiltonian operator discretization and approximation of plane wave are assumed for the models and simulation by applying the basis function. The computed electronic properties include the band structures and density of states of monolayer SiCNRs of varying width. Furthermore, the properties are compared with those of graphene nanoribbons. The bandgap of ASiCNR as a function of width are also benchmarked with published DFT-GW and DFT-GGA data. Our nearest neighbour tight-binding (NNTB) model predicted data closer to the calculations based on the standard DFT-GGA and underestimated the bandgap values projected from DFT-GW, which takes in account the exchange-correlation energy of many-body effects.

• 한국결정성장학회지
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• 제29권2호
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• pp.45-49
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• 2019

본 연구에서는, 탄소성분으로서 탄화왕겨, 제지슬러지, 커피찌꺼기와 실리카 분말로부터, 비교적 미세한 탄화규소 결정질 응집체를 합성하였다. 탄소성분들과 실리카의 혼합물로부터 탄화규소 응집체를 얻기 위한 주요 반응물질은 열탄화환원 반응에 의해 생성된 일산화규소 기체로 추정되었다. 탄화왕겨, 제지슬러지, 커피찌꺼기와 실리카 분말의 혼합물로부터 열탄화환원반응법을 거쳐 생성된 탄화규소 결정질 응집체들에 대한 XRD 회절패턴으로부터 결정상을 분석하였고, FE-SEM과 FE-TEM을 통한 미세구조, 결정구조 분석이 이루어졌다. 탄화왕겨, 제지슬러지, 그리고 실리카 분말의 시료의 경우, XRD 분석에서는 $35^{\circ}$ 부근의 (111) peak은 비교적 높은 강도를 나타내었다. 탄화왕겨, 제지슬러지, 커피찌꺼기와 실리카 분말의 혼합물로부터 합성된 시료들에 대해 FE-SEM 관찰을 통하여 $1{\mu}m$ 이하의 미세입자들을 관찰하였으며, TEM 측정 결과에서는 탄화규소 결정질상의 (110) 회절패턴들을 확인하였다.

• 한국결정성장학회지
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• 제5권4호
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• pp.343-350
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• 1995

$\alpha$ - 및 $\beta$-SiC를 출발원료로 하여 일축성형한 후 $1800^{\circ}C$에서 고온가압법으로 소결한 탄화규소에 나타난 우선방위의 정도를 X-ray pole figure analysis로 조사하였다. $\alpha$-SiC를 출발원료로 사용한 경우에 고온 가압소결 후 약한 집합조직을 보인 반면, $\beta$ - SiC를 출발원료로 사용한 경우 고온가압소결 후 강한 집합조직을 보였으며, 이 경우 ${\beta} {\rightarrow} {\alpha}$ 상변태에 기인한 이중미세구조를 나타내었다. 또한, 집합조직의 강도는 고온가압소결 후 행해진 열처리 조건에 따라서도 변화를 보였다.

• 한국광학회지
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• 제33권2호
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• pp.74-83
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• 2022

위성 관측 카메라용 대구경 초경량 반사광학계를 제작하기 위해 소재 개발부터 최종 시스템 인증시험까지 전 과정을 수행했다. 완성된 비점보정 3반사경 구조의 위성용 반사광학계 망원경은 주반사경의 구경이 700 mm이고, 망원경 전체 질량은 66 kg이다. 광학소재 및 구조물에 적용하기 위한 반응소결법을 개발했고, 이 방법을 이용해서 실리콘 카바이드(silicon carbide, SiC) 재질의 광학 몸체를 제작하고 소결체의 화학특성, 표면특성, 결정구조를 확인했다. 광학 몸체의 기계적, 화학적 성질을 고려한 연마와 코팅 방법을 개발했으며 화학기상증착법을 적용해 SiC 경면 표면 위에 치밀한 SiC 박막을 170 ㎛ 이상 증착함으로써 광학 성능이 우수한 경면을 만들 수 있었다. 반사경 제작 후 반사경과 지지 구조를 조립하고 정렬해서 다양한 광학 시계에 대해 파면 오차를 측정했다. 아울러 우주 환경 및 발사환경에 대한 우주 인증에 맞추어 구성품 및 최종 조립체를 온도와 진동에 대한 환경시험을 실시하여 설계 목표 성능을 달성했음을 확인했다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.32-32
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• 2009

Silicon carbide (SiC) is a wide-bandgap semiconductor that has materials properties necessary for the high-power, high-frequency, high-temperature, and radiation-hard condition applications, where silicon devices cannot perform. SiC is also the only compound semiconductor material. on which a silicon oxide layer can be thermally grown, and therefore may fabrication processes used in Si-based technology can be adapted to SiC. So far, atomic force microscopy (AFM) has been extensively used to study the surface charges, dielectric constants and electrical potential distribution as well as topography in silicon-based device structures, whereas it has rarely been applied to SiC-based structures. In this work, we investigated that the local oxide growth on SiC under various conditions and demonstrated that an increased (up to ~100 nN) tip loading force (LF) on highly-doped SiC can lead a direct oxide growth (up to few tens of nm) on 4H-SiC. In addition, the surface potential and topography distributions of nano-scale patterned structures on SiC were measured at a nanometer-scale resolution using a scanning kelvin probe force microscopy (SKPM) with a non-contact mode AFM. The measured results were calibrated using a Pt-coated tip. It is assumed that the atomically resolved surface potential difference does not originate from the intrinsic work function of the materials but reflects the local electron density on the surface. It was found that the work function of the nano-scale patterned on SiC was higher than that of original SiC surface. The results confirm the concept of the work function and the barrier heights of oxide structures/SiC structures.

• 한국세라믹학회지
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• 제42권8호
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• pp.542-547
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• 2005

Keys to the attainment of tailored properties in SiC ceramics are microstructure control and judicious selection of the sintering additives. In this study, three different strategies for controlling microstructure of liquid-phase-sintered SiC ceramics (LPS-SiC) have been suggested: control of the initial $\alpha-SiC$ content in the starting powder, a seeding technique, and a post-sintering heat treatment. The strategies suggested offer substantial flexibility for producing toughened SiC ceramics whereby grain size, grain size distribution, and aspect ratio can be effectively controlled. The present results suggest that the proposed strategies are suitable for the manufacture of toughened SiC ceramics with improved toughness.

• 전력전자학회논문지
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• 제26권6호
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• pp.429-436
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• 2021

The design of a gate driver power supply for a three-phase inverter using a silicon carbide (SiC) MOSFET. The requirements for the power supply circuit of the gate driver for the SiC MOSFET are investigated, and a flyback converter using multiple transformers is used to make the four isolated power supplies. The proposed method has the advantage of easily constructing the power supply circuit in a limited space as compared with a multi-output flyback converter using a single core. The power supply circuit for the three-phase SiC MOSFET inverter for driving an AC motor is designed and implemented. The operation and validity of the implemented circuit are verified through simulations and experiments.

• 자원리싸이클링
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• 제31권6호
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• pp.60-65
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• 2022

본 논문에서는 반도체용 실리콘 기판 가공 과정에서 발생한 슬러지 재활용을 위해 탄화 반응에 의한 탄화규소(SiC) 분말 합성 공정을 적용한 결과를 제시하고자 한다. 입수한 슬러지는 실리콘 기판을 탄화규소 연마재를 사용하여 가공하는 과정에서 발생하므로 실리콘과 탄화규소가 혼합된 형태였으며 가공 설비로부터 발생한 철 불순물이 포함되어 있었다. 슬러지는 절삭유가 포함되어 있어 점성이 있는 유체 형태였으며 대기 건조를 통해 분말 형태로 변화된 후 산 세정을 통한 철 성분 제거 및 탄화에 의한 탄화규소 분말 합성 과정을 거치게 된다. 슬러지에 포함된 실리콘과 탄화규소의 비율에 따라 탄화 반응에 필요한 탄소량이 달랐으며 탄화규소의 함량이 커질수록 탄소 부족 현상으로 인해 비화학량론적 탄화물(SiC_x, x<1) 형성이 촉진되어 순수한 탄화규소 합성이 이루어지지 않는 것을 확인하였다. 이러한 비화학량론적 탄화물은 잉여 탄소 추가와 고에너지 밀링에 의한 탄화 반응성 증가를 통해 제거할 수 있었으며 결과적으로 산 세정과 밀링 과정에 의해 슬러지로부터 순수한 탄화규소 분말 합성이 가능함을 확인할 수 있었다.