• The Korean Journal of Ceramics
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• v.1 no.4
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• pp.209-213
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• 1995

The electrical conductivity was investigated in two series of alkali aluminosilicate glass melts, $25R_2O(R: Na and K)-xAl2O3-(75-x)SiO_2$ at temperatures ranging from 1000 to 140$0^{\circ}C$. The dependences of conductivity or activation energy on $Al_2O_3/R_2O$ of both series in the molten state showed a same behavior. These results in the molten state were compared with previous studies for sodium alkali aluminosilicate glasses in the molten and solid state, and explained in terms of the binding state: $[-O]-R^+\; and\; [AlO_4]-R^+$.

• The Korean Journal of Ceramics
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• v.1 no.4
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• pp.185-190
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• 1995

Tribological behavior of the diamond-like carbon (DLC) films sliding on floppy disk has been investigated. Hydrogenated DLC films have been prepared by plasma enhanced chemical vapor deposition (PECVD) using methane and hydrogen mixture in different volume ratios on ferrite substrates. DLC films show lower friction coefficients (0.2~0.4) than those of the uncoated ferrite(0.4~0.5). DLC films containing more hydrogen exhibit higher wear resistance. To investigate the roughness effect on wear, the substrates were polished with SiC papers prior to deposition. Too fine or too rough DLC surfaces result in poor wear resistance. Wear resistance of annealed DLC films at higher temperature slightly increases with respect to as-deposited film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.256-259
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• 1999

The purpose of this study is to develop the material for multiayer piezoelectric ceramic transformer because multiayer piezoelectric transformer must need low sintering temperature. So that PMN-PSN-PZT family ceramics were added with glass brit(SiO$_2$ $.$ PbO). The dielectric and piezoelectric properties were increased with increasing it until the amounts of additive 0.8wt%. Sintering temperature were low about 100[$^{\circ}C$]. Accordingly, This material could be used to multiayer piezoelectric transformer .

• The Korean Journal of Ceramics
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• v.6 no.4
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• pp.364-369
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• 2000

Silicon nitride with adding La$_2$O$_3$ was sintered by gas pressure sintering (GPS) technique at $1950^{\circ}C$, in $N_2$ gas at 3 MPa, for 2h. Mechanical properties such as hardness, flexural strength, and fracture toughness were determined as a function of the GPS holding time and the contents of La$_2$O$_3$ in silicon nitride. Also machinability of silicon nitride ball with various GPS holding time and amount of La$_2$O$_3$ was evaluated by magnetic fluid grinding (MFG) method. In this study it was found that machinability was influenced significantly with La$_2$O$_3$ contents. However, the different GPS holding time did not affect the machinability very much.

• Journal of the Korean Ceramic Society
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• v.26 no.5
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• pp.637-644
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• 1989

Beta-sialon powder(Z=1) was synthesized by the simultaeous reduction and nitridation of the mixed powders of Hadong kaolin and silica. Silicon hydroxide was prepared from Si-alkoxide by a hydrolysis method and amorphous silica was obtained from the calcination of the prepared silicon hydroxide. Hadong kaolin was mixed with both the silicon hydroxide and amorphous silica, respectively. The average particle size was 4${\mu}{\textrm}{m}$ and the morphology of particle was rod-like and equiaxed in the case of beta-sialon powder prepared form Hadong kaolin and silicon hydroxide(COMPOSITION A), whereas the average particle size was 3${\mu}{\textrm}{m}$ and the morphology of particle was equiaxed in the case of beta-sialon powder prepared from Hadong kaolin and amorphous silica(COMPOSITION B). The synthesized beta-sialon powders were hot-pressed at 175$0^{\circ}C$ for 2 hours under 30 MPa in a nitrogen atmosphere after YAG composition(8wt%) was added to these powders as a sintering agent. The hot-pressed specimens were annealed a 140$0^{\circ}C$ for 4 hours in a nitrogen atmosphere. The mechanical properties of sintered bodies were investigated in terms of M.O.R., fracture toughness and hardness. The measured values are as follows. COMPOSITION A : M.O.R. 508MPa, KIC 3.5MN/m3/2, hardness 13.6GPa. COMPOSITION B : M.O.R. 653MPa, KIC 5.4MN/m3/2, hardness 13.5GPa.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.717-720
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• 1992

Since the discovery of High-Tc superconducting Y-Ba-Cu-O ceramics with critical temperature of about 90K, numerous efforts to prepare supercond ucting thin films with excellent qualities such as High-Tc and critical current density have been made. The samples were deposited onto $SiO_x$ substrates heated at 540$^{\circ}C$ - 600$^{\circ}C$ in a single target rf - magnetron sputtering system. The film thickness has 2000$\AA$ - 5000 $\AA$ with a rate of 16 $\AA$/min. and distance between target and substrate was 50 mm. The films were characterized by X - ray diffraction, scanning electron microscopy and critical temperature.

• Journal of the Korean Ceramic Society
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• v.42 no.8 s.279
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• pp.532-536
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• 2005

Thermal shock resistance of structural ceramics is a property that is difficult to quantity, and as such is usually expressed in terms of a number of empirical resistance parameters. These are dependant on the conditions imposed, but one method that can be used is the examination of density, Young's modulus and thermal expansion retention after quenching. For high temperature applications, long-annealing thermal durability, cycle thermal stability and residual mechanical properties are very important if these materials are to be used between $1000^{\circ}C$ and $1300^{\circ}C$. In this study, an excellent thermal shock-resistant material based on $Al_2TiO_5-mullite$ composites of various compositions was fabricated by sintering reaction from the individual oxides and adjusting the composition of $Al_2O_3TiO_2/SiO_2$ ratios. The characterization of the damage induced by thermal shock was done by measuring the evolution of the Young's modulus using ultrasonic analysis, density and thermal expansion coefficients.

• The Korean Journal of Ceramics
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• v.2 no.1
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• pp.25-32
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• 1996

Solid electroyte nasion was synthesized by the optimized solid state reaction minimizing the volume fraction of secondary $ZrO_2$ and glassy phases. To compensate for the evaporation of Na and P during heat-treatment, excess Na and P were added to the starting composition $Na_{1+x} Zr_2 Si_x P_{d-x} O_{12}$ (x=2.1). Phases pure nasicon comparable in volume fraction to the one obtaied from sol-gel process were synthesized after the reaction at $1100~1150^{\circ}C$,$ P_{O2}>=0.1-0.15 $$ZrO_2$ increased with the heat-treatment time due to the decomposition of nasicon phase and that of glassy phase increased as partial oxygen pressure decreased. The synthesized nasion showed a good electrical conductivity of $-1{\times}10^{-2}({\omega}{\cdot}cm)^{-1}$ at $350^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.40 no.6
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• pp.525-529
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• 2003

Biotribological properties, such as wear rate and friction coefficient, of 3Y-TZP and Low Temperature Degradation (LTD) free materials were investigated via a ball(SiC)-on-plate sliding wear test to evaluate the relationship between wear mechanism and phase transformation. Wear test was conducted with a sliding speed of 0.035 m/s at room temperature and at 25$0^{\circ}C$ in air under a normal load of 49 N, respectively. Although friction coefficient of 3Y-TZP was the lowest due to the fine grain size, the highest wear loss and rate were observed due to the debris of monoclinic grains introduced during sliding and their values increased drastically with raising temperature. However, the biotribological properties of LTD-free materials were insensitive to temperature due to the inertness of the phase transformation, suggesting that they may be applicable to the biomechanical parts.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.4
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• pp.261-268
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• 1999

Laser-induced thermochemical etching has been recognized as a new powerful method for processing a variety of materials, including metals, semiconductors, ceramics, insulators and polymers. This study presents characteristics of direct etching for Si substrate using focused argon ion laser beam in aqueous KOH and $CCl_2F_2$ gas. In order to determine process conditions, we first theoretically investigated the temperature characteristics induced by a CW laser beam with a gaussian intensity distribution on a silicon surface. Major process parameters are laser beam power, beam scan speed and reaction material. We have achieved a very high etch rate up to $434.7\mum/sec$ and a high aspect ratio of about 6. Potential applications of this laser beam etching include prototyping of micro-structures of MEMS(micro electro mechanical systems), repair of devices, and isolation of opto-electric devices.