• The Korean Journal of Ceramics
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• 제4권1호
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• pp.25-27
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• 1998

The effect of gas activation on the formation of SiC layer on Si substrate using methane as a carbon source was investigated. Tungsten filaments, heated above 200$0^{\circ}C$, were used to activate the methane-hydrogen mixed gas. The dissociation of methane gas by the heated filament was enough to form a SiC layer successfully, which was very difficult without any activation. The SiC layer formed on the Si substrate was crystalline and nearly epitaxial as measured by X-ray diffraction. The SiC layer formed on the Si substrate was crystalline and nearly epitaxial as measured by X-ray diffraction. The stoichiometry was also close to 1:1. However, the characteristic of the SiC layer was dependent on the heat-treatment condition. The general behavior of the layer growth with the variables was discussed.

• 한국세라믹학회지
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• 제47권6호
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• pp.491-497
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• 2010

In this paper, we employed the classical molecular dynamics simulations using Tersoff's potential to calculate the elastic constants of the silicon carbide (SiC) crystal at high temperature. The elastic constants of the SiC crystal were calculated based on the stress-strain characteristics, which were drawn by the simulation using LAMMPS software. At the same time, the elastic constants of the SiC ceramics were measured at different temperatures by impulse excitation testing (IET) method. Based on the simulated stress-strain results, the SiC crystal showed the elastic deformation characteristics at the low temperature region, while a slight plastic deformation behavior was observed at high strain over $1,000^{\circ}C$ temperature. The elastic constants of the SiC crystal were changed from about 475 GPa to 425 GPa by increasing the temperature from RT to $1,250^{\circ}C$. When compared to the experimental values of the SiC ceramics, the simulation results, which are unable to obtain by experiments, are found to be very useful to predict the stress-strain behaviors and the elastic constant of the ceramics at high temperature.

• 한국세라믹학회지
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• 제46권5호
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• pp.520-524
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• 2009

Porous self-bonded silicon carbide (SBSC) ceramics were fabricated at temperatures ranging from 1750 to $1850^{\circ}C$ using SiC, Si, C as starting materials and Al as an optional sintering additive. The effect of Al addition on the porosity and strength of the porous SBSC ceramics were investigated as functions of sintering temperature and Si:C ratio. The porosity increased with decreasing the Si:C ratio and increasing the sintering temperature. It was possible to fabricate SBSC ceramics with porosities ranging from 37% to 44% by adjusting the Si:C ratio and the sintering temperature. Addition of Al additive promoted densification and necking between SiC grains, resulting in improved strength. Typical flexural strengths of SBSC ceramics with and without Al addition were 44 MPa and 34MPa, respectively.

• 대한기계학회논문집
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• 제13권3호
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• pp.404-410
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• 1989

본 연구에서는 공업용 세라믹(요업재료등)으로 개발된 것 중에서 가장 마찰특성이 우수할 것으로 간주되고 있는 SiC, Si$_{3}$N$_{4}$와 ZrO$_{2}$ 의 건조 및 윤활마찰특성과 금속과의 마찰특성을 실험적으로 밝히려 한다.

• 한국세라믹학회지
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• 제43권8호
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• pp.509-514
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• 2006

In this study, chopped Hi-Nicalon SiC fiber Reinforced Porous Reaction Bonded SiC (RBSC) composites and it fabrication process were developed by using Si melt infiltration process. The porosity and average pore size in fabricated chopped SiC fiber reinforced porous RBSC composites were in the range of $30{\sim}40%$ and $40-90{\mu}m$, which mainly determined by the SiC powder size used as starting material and amount of residual Si in porous composites. The maximum flexural strength of chopped SiC fiber reinforced porous RBSC composite was as high as 80 MPa. The delayed fracture behavior was observed in chopped SiC fiber reinforced porous RBSC composites upon 3-point bending strength test.

• 비파괴검사학회지
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• 제29권5호
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• pp.479-484
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• 2009

세라믹스의 비파괴평가 기술은 산업분야에 응용하기 위한 세라믹스 신뢰성 개발에 있어서 필수적인 기술이다. 본 연구는 초음파 C-Scan 방식을 이용하여 SiC 세라믹스의 표면균열을 탐상하기 위한 실험적 연구 결과를 제시하고자 한다. 이를 위해 SDS-win과 $\mu$-SDS 두 종류의 초음파 장치와 25, 50 및 125 MHz의 초음파센서를 이용하여 세라믹스의 표면균열 탐상 가능성에 대해 실험적인 연구를 수행하였다. 본 연구 결과, 세라믹스의 표면미소균열은 결국 25 및 50 MHz 센스로 정밀하게 검출할 수 없었으나, 125 MHz 센서에 의한 집속법 탐상 결과 희미한 형상 정도를 검출할 수 있었으며, 비집속법의 경우는 비커스 압입자의 형상 검출이 가능함을 알 수 있었다. 따라서 본 연구를 통하여, 초음파 C-Scan 집속 및 비집속 방법은 미세균열의 탐상방식으로 어느 정도 접근 가능함을 실험적으로 확인하였다

• 한국해양공학회:학술대회논문집
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• 한국해양공학회 2006년 창립20주년기념 정기학술대회 및 국제워크샵
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• pp.166-168
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• 2006

$Si_3N_4/SiC$ composite ceramics was sintered in order to investigate their bending strength behavior after crack healing. $Y_2O_$ and $TiO_2$ power was added as sintering additives to enhance it's sintering property. A three-point bending specimen was cut out from sintered plates. About $100\;{\mu}m$ semi-circular surface cracks were made on the center of the tension surface of the three-point bending specimen using Vickers indenter. After the crack-healing processing from $500^{\circ}C$ to $1300^{\circ}C$, for 1 h, in air, the bending strength behavior of these crack-healed specimen coated with $SiO_2$ colloidal were determined systematically at room temperature. $Si_3N_4/SiC$ ceramics using additive powder ($Y_2O_3+TiO_2$) was superior to that of additive powder $Y_2O_3$. The additive powder $TiO_2$ exerted influence at growth of $Si_3N_4$. The optimum crack healing conditions coated $SiO_2$ colloidal were $1000^{\circ}C$ at $Si_3N_4/SiC$ using additive powder ($Y_2O_3+TiO_2$), and $1300^{\circ}C$ at $Si_3N_4/SiC$ using additive powder $Y_2O_3$.

• 한국분말재료학회지
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• 제19권5호
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• pp.379-384
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• 2012

This paper reports the microstructures and thermal conductivities of $ZrB_2$-SiC composite ceramics with size and amount of SiC. We fabricated sintered bodies of $ZrB_2$-x vol.% SiC (x=10, 20, 30) with submicron and nanosized SiC densified by spark plasma sintering. Microstructure retained the initial powder size of especially SiC, except the agglomeration of nanosized SiC. For sintered bodies, thermal conductivities were examined. The observed thermal conductivity values are 40~60 W/mK, which is slightly lower than the reported values. The relation between microstructural parameter and thermal conductivity was also discussed.

• 한국세라믹학회지
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• 제45권7호
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• pp.430-437
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• 2008

Porous self-bonded silicon carbide (SBSC) ceramics were fabricated at temperatures ranging from 1700 to $1850^{\circ}C$ using SiC, silicon (Si), and three different carbon (C) sources, including carbon black, phenol resin, and xylene. The effects of the Si:C ratio and carbon source on porosity and strength were investigated as a function of sintering temperature. Porous SBSC ceramics fabricated from phenol resin showed higher porosity than the others. In contrast, porous SBSC ceramics fabricated from carbon black showed better strength than the others. Regardless of the carbon source, the porosity increased with decreasing the Si:C ratio whereas the strength increased with increasing the Si:C ratio.

• 한국세라믹학회지
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• 제32권11호
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• pp.1308-1314
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• 1995

Changes in phase and microstructure were investigated in the SiC-AlN ceramics prepared by pressureless sintering using yttrium aluminum garnet (YAG) as a sintering aid at 200$0^{\circ}C$ and 210$0^{\circ}C$. The SiC/AlN ratio made a remarkable difference in densification, phase relations and the morphology of grains. In the AlN-rich composition, major phase was 2H and microstructure was composed of the densified equiaxed grains irrespective of the sintering temperatures. While those sintered at 200$0^{\circ}C$ were porous with major phase being 3C, the rod-like and the equiaxed grains were coexisted when sintered at 210$0^{\circ}C$ in the SiC-rich composition.