• Journal of Powder Materials
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• v.6 no.1
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• pp.18-35
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• 1999

Phase equilibria in the system Si3N4-TiC-TiCxN1-x-C-N were determined by thermodynamic calculations (CALPHAD-method). The reaction peaction paths for Si3N4-TiC and SiC-TiC composites in the Ti-Si-C-n system were simulated at I bar N2-pressure and varying terpreatures. At a temperature of 1923 K two tie-triangles (TiC0.34N0.66+SiC+C and TiC0.13N0.87+SiC+Si3N4) and two 2-phase fieds (TiCxN1-x+SiC; 0.13

• Journal of the Korean Ceramic Society
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• v.26 no.3
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• pp.409-415
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• 1989

Si3N4-TiN electro-conductive ceramic composites with 7wt% Al2O3＋3wt% Y2O3 or 5wt% MgO as sintering aids were fabricated by pressureless sintering at 1,80$0^{\circ}C$ for 1h. The 3pt. flexural strength, KIC and Vickers hardness were measrued in order to investigate the effects of TiN on the mechanical properties. Also oxidation behavior was observed by measuring the weight gain after exposure to air at 1,10$0^{\circ}C$ for 100h. the reaction products between Si3N4 and TiN was not detected by XRD and EDS. Mechanical properties of the composites were not influenced by the addition of TiN less than 30vol%, but oxidation resistance of the composites was rapidly decreased with the amount of added TiN.

• The Korean Journal of Ceramics
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• v.1 no.2
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• pp.101-105
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• 1995

Electrical discharge machinable $Si_3N_4$ was fabricated with the addtion of 20-60 vol% TiN by gas pressure sintering. Their sinterability, microstructure, mechanical and electrical properties were characterized as a function of the TiN content. The addition of TiN up to 20 vol% increased the flexural strength and fracture toughness as compared with those of the monolithic Si3N4. For the TiN content higher than 40 vol%, the electrical resistivity was lower than $1062\Omega$.cm. The $Si_3N_4$ with the addition of 40 vol% of TiN appears to have the optimum considerable sinterability, mechanical and electrical properties, and machinability. A microstructural analysis showed that the enhanced toughening was due to the crack deflection.

• The Korean Journal of Ceramics
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• v.5 no.4
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• pp.317-323
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• 1999

Si3N4-TiC composites have been known as electrically conductive ceramics. $Si_3N_4-TiC$ composites with 2 wt% $Al_2O_3$ and 4 wt% $Y_2O_3$ were hot pressed in $N_2$ environment. The mechanical properties including hardness, fracture toughness, and flexural strength and tribological properties were investigated as a function of TiC content. $Si_3N_4-40$ vol% TiC composite was hot pressed at $1,750^{\circ}C$, $1,800^{\circ}C$, and $1,850^{\circ}C$ for 1, 3 and 5 hours in $N_2$ gas. Mechanical and tribolgical properties depended on microstructures, which were controlled by hte TiC content, hot press temperature, and hot press holding time. However, mechanical properties and tribological behaviors were degraded by the chemical reaction between TiC and N. The chemically reacted products such as TiCN, SiC, and $SiO_2$ were detered by the X-ray diffraction analysis.

• Korean Journal of Materials Research
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• v.9 no.6
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• pp.577-582
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• 1999

In order to make the electroconductive $Si_3N_4$-TiN composities, the Si-Ti(N) compacts were nitrided at $1450^{\circ}C$ for 20hours, and then they were post-sintered by a gas-pressure-sintering technique at 1TEX>$1950^{\circ}C$ for 3.5 hours. As starting powders, commercial si powder of about $10\mu\textrm{m}$, two types of Ti powders of 100 and 325 mesh, and fine-sized TiN of $2.5\mu\textrm{m}$ powders were used. In the $Si_3N_4$-TiN sintered bodies used Ti powders, the relative density and fracture strength and electrical conductivity are low due to the existence of large amounts of coarse pores. However, in the $Si_3N_4$-TiN composite used TiN powder, the fracture toughness, fracture strength and electrical resistivity were $5.0MPa{\cdot}m^{1/2}$, 624MPa and $1400{\omega}cm$, respectively. The dispersion of TiN particles in the composite inhibited the growth of $Si_3N_4$ in the shape of rod and made strong strain field contrasts at the $Si_3N_4$-TiNinterfaces. It was recognized that microstructural control is required to improve the electrical conductivity and mechanical properties of $Si_3N_4$-TiN composites by dispersing TiN particles homogeneously.

• Journal of Powder Materials
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• v.8 no.3
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• pp.210-213
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• 2001

$Si_3N_4$/TiN nano/nano-type composites were successfully fabricated by the combination of a mechano-chemical grinding (MCG) method and a short time sintering process, and their wear resistance was evaluated. Powder mixtures of $\alpha-Si_3N_4$and Ti were prepared using mechano-chemical grinding process and the resulting nanocomposite powder mixtures were consolidated using pulsed electric current sintering (PECS). TEM observation showed that the nano/nano-type composites consisted of homogeneous and very fine matrix grains with the size less than 100 nm. The obtained $Si_3N_4$-based nano/nano-type showed high wear resistance and electric discharge machinability.

• Journal of the Korean institute of surface engineering
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• v.36 no.2
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• pp.109-115
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• 2003

Quaternary Ti-Al-Si-N films were deposited on WC-Co substrates by a hybrid deposition system of arc ion plating (AIP) method for Ti-Al source and DC magnetron sputtering technique for Si incorporation. The synthesized Ti-Al-Si-N films were revealed to be composites of solid-solution (Ti, Al, Si)N crystallites and amorphous Si3N4 by instrumental analyses. The Si addition in Ti-Al-N films affected the refinement and uniform distribution of crystallites by percolation phenomenon of amorphous silicon nitride, similarly to Si effect in TiN film. As the Si content increased up to about 9 at.%, the hardness of Ti-Al-N film steeply increased from 30 GPa to about 50 GPa. The highest microhardness value (~50 GPa) was obtained from the Ti-Al-Si-N film haying the Si content of 9 at.%, the microstructure of which was characterized by a nanocomposite of nc-(Ti,Al,Si) N/a$-Si_3$$N_4$.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.304-304
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• 2014

Quaternary Ti-Al-Si-N films were deposited on WC-Co substrates by a hybrid deposition system of arc ion plating (AIP) method for Ti-Al source and DC magnetron sputtering technique for Si incorporation. The synthesized Ti-Al-Si-N films were revealed to be composites of solid-solution (Ti,Al)N crystallites and amorphous $Si_3N_4$ by instrumental analyses. The Si addition in Ti-Al-N films affected the refinement and uniform distribution of crystallites by percolation phenomenon of amorphous silicon nitride, similarly to Si effect in TiN film. As the Si content increased up to about 9 at.%, the hardness of Ti-Al-N film steeply increased from 30 GPa to about 50 GPa. The highest microhardness value (~50 GPa) was obtained from the Ti-Al-Si-N film having the Si content of 9 at.%, the microstructure of which was characterized by a nanocomposite of $nc-(Ti,Al)N/a-Si_3N_4$.

• The Korean Journal of Ceramics
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• v.5 no.4
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• pp.324-330
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• 1999

$Si_3N_4$-$TiB_2$ with 2 wt% $Al_2O_3$ and 4 wt% $Y_2O_3$ additives was hot pressed in a flowing $N_2$ environment with varying $TiB_2$ content from 10 to 50 vol%. Variations of mechanical (hardness, fracture toughness, and flexual strength), and tribological properties as a function of $TiB_2$ content were investigated. As the content of $TiB_2$ increased, relative density decreased due to the chemical reaction of $TiB_2$in $N_2$ environment. The reduction of density causes mechanical properties to be degraded with an increase of $TiB_2$ in $Si_3N_4$. Tribological properties were dependent of microstructure as well as mechanical properties, however, they were degraded strongly by the chemical reaction of $Si_3N_4$-$TiB_2$ during hot pressing in $N_2$ environment. SEM and TEM observations, and X-ray diffraction analysis that the chemical reaction products at the interface are TiCN, Si, and $SiO_2$. Also, the comparison of XRD patterns of the $Si_3N_4$-40 vol% $TiB_2$ composites hot pressed at $1,750^{\circ}C$ for 1 hour between in $N_2$ and in Ar gas was made. The XRD peaks of Si and $SiO_2$ were not found in Ar, but still a weak peak of TiCN was presented.

• Journal of the Korean Society for Precision Engineering
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• v.18 no.9
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• pp.82-88
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• 2001

In order to fulfil the requirements of the various performance profiles of ceramic cutting tools, six different SiC-based ceramics have been fabricated by hot-pressing (SiC--${Si}_3 {N}_4$composites) or by hot-pressing and subsequent annealing (monolithic SiC and SiC-TiC composites). Correlation between the annealing time and the corresponding microstructure and the mechanical properties of resulting ceramics have been investigated. The grain size of both ${Si}_3 {N}_4$and SiC in SiC-${Si}_3 {N}_4$composites increased with the annealing time. Monolithic SiC has the highest hardness, SiC-TiC composite the highest toughness, and the SiC-${Si}_3 {N}_4$composite the highest strength among the ceramics investigated. The hardness of SiC-${Si}_3 {N}_4$composites was relatively independent of the grain size, but dependent on the sintered density. The cutting performance of the newly developed SiC-based ceramic cutting tools will be described in Part 2 of this paper.