• Nuclear Engineering and Technology
• /
• v.51 no.4
• /
• pp.1091-1097
• /
• 2019

After the Fukushima accident in 2011, there has been increased public concern about radioactive contamination of water resources through fallout in neighboring countries. However, there is still no available initial response system that can promptly detect radionuclides. The purpose of this research is to develop the most efficient gamma spectrometer to monitor radionuclides in an aquatic environment. We chose a thallium-doped sodium iodide (NaI(Tl)) scintillator readout with a silicon photo multiplier (SiPM) due to its compactness and low operating voltage. Three types of a scintillation detector were tested. One was composed of a scintillator and a photomultiplier tube (PMT) as a reference; another system consisted of a scintillator and an array of SiPMs with a light guide; and the other was a scintillator directly coupled with an array of SiPMs. Among the SiPM-based detectors, the direct coupling system showed the best energy resolution at all energy peaks. It achieved 9.76% energy resolution for a 662 keV gamma ray. Through additional experiments and a simulation, we proved that the light guide degraded energy resolution with increasing statistical uncertainty. The results indicated that the SiPM-based scintillation detector with no light guide is the most efficient design for monitoring radionuclides in an aquatic environment.

• Journal of the Korean Magnetics Society
• /
• v.10 no.5
• /
• pp.203-209
• /
• 2000

Top synthetic spin valves with structure Ta/NiFe/CoFe/Cu/CoFe(P 1)/Ru/CoFe(P2)/FeMn/Ta on Si (100) substrate with natural oxide were prepared by dc magnetron sputtering system. We have changed only the thickness in free layers and the thickness difference (Pl-P2) in two ferromagnetic layers separated by Ru, and investigated the effect of magnetic film thickness on interlayer coupling field in spin valve with synthetic antiferromagnet. According to the decrease of free layer thickness, interlayer coupling field was increased due to the magnetostatic coupling(orange peel coupling). In case of t$\_$P1/>t$\^$P2/, interlayer coupling field agreed well with the modified Neel model suggested in conventional spin valve structures by Kools et al. However, in case of t$\_$P1/>t$\^$P2/, it was found that the interlayer coupling field was not explained by the Modified Neel Model and was confirmed the necessity of further remodeling. The dependence of Cu thickness on the interlayer coupling field was investigated and 10 Oe of interlayer coupling field was obtained when the Cu thickness is 32 $\AA$.

• Journal of the Korean Magnetics Society
• /
• v.15 no.6
• /
• pp.315-319
• /
• 2005

To obtain low switching field ($H_{SW}$) we introduced amorphous ferromagnetic $Co_{70.5}Fe_{4,5}Si_{15}B_{10}$ single and synthetic antiferromagnet (SAF) free layers in magnetic tunnel junctions (MTJs). The switching characteristics for MTJs with structures $Si/SiO_2/Ta$ 45/Ru 9.5/IrMn 10/CoFe 7/AlOx/CoFeSiB 7 or CoFeSiB (t)/Ru 1.0/CoFeSiB (7-t)/Ru 60 (in nm) were investigated and compared to MTJs with $Co_{75}Fe_{25}$ and $Ni_{80}Fe_{20}$ free layers. CoFeSiB showed a lower saturation magnetization of $560 emu/cm^3$ and a higher anisotropy constant of $2800\;erg/cm^3$ than CoFe and NiFe, respectively. An exchange coupling energy ($J_{ex}$) of $-0.003erg/cm^2$ was observed by inserting a 1.0 nm Ru layer in between CoFeSiB layers. In the CoFeSiB single and SAF free layer MTJs, it was frond that the size dependence of the $H_{SW}$ originated from the lower $J_{ex}$ experimentally and by micromagnetic simulation based on the Landau-Lisfschitz-Gilbert equation. The CoFeSiB SAF structures showed lower $H_{SW}$ than that of NiFe, CoFe and CoFeSiB single structures. The CoFeSiB SAF structures were proved to be beneficial far the switching characteristics such as reducing the coercivity and increasing the sensitivity in micrometer to submicrometer-sized elements.

• The Transactions of the Korean Institute of Electrical Engineers P
• /
• v.66 no.3
• /
• pp.129-134
• /
• 2017

We investigated theoretically the quantum optical transition properties of Si, in quasi 2-Dimensinal Landau splitting system, based on quantum transport theory. We apply the quantum transport theory (QTR) to the system in the confinement of electrons by square well confinement potential under linearly polarized oscillating field. We use the projected Liouville equation method with Equilibrium Average Projection Scheme (EAPS). In order to analyze the quantum transition, we compare the temperature and the magnetic field dependencies of the QTLW and the QTLS on four transition processes, namely, the intra-leval transition process, the inter-leval transition process, the phonon emission transition process and the phonon absorption transition process.

• Journal of the Korean Chemical Society
• /
• v.25 no.5
• /
• pp.311-317
• /
• 1981

A new nickel(II) compound, $Ni(CH_2SiMe_3)_2((C_6H_5)_2PCH_2CH_2P(C_6H_5)_2)$, 1, has been prepared by the reaction of $NiCl_2((C_6H_5)_2PCH_2CH_2P(C_6H_5)_2)$ with $Me_3SiCH_2Li$. The compound, 1, is stable under nitrogen at room temperature both in solution and in the solid state. Thermal decomposition of 1 in solution or in the solid produces the reductive coupling product, $Me_3SiCH_2CH_2SiMe_3$ which is also afforded by the reactions of 1 with CO and $O_2$ at room temperature, and with $(C_6H_5)_2PCH_2CH_2P(C_6H_5)_2$ at 80${\circ}$C.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.39 no.11
• /
• pp.40-46
• /
• 2002

A MEMS(Micro Electro Mechanical System) package using a doped-silicon(Si) carrier for coplanar microwave and millimeter-wave integrated circuits is proposed in order to reduce parasitic problems of leakage, coupling and resonance. The proposed carrier scheme is verified by fabrication and measuring a GaAs CPW(Coplanar Waveguide) on the three types of Si-carriers(gold-plated high resistivity, lightly doped, high resistivity). The proposed MEMS package using the lightly doped(15 ${\Omega}{\cdot}$) Si-carrier shows parasitic-free performance since the lossy Si-carrier effectively absorbs and suppresses the resonant leakage.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.27 no.11
• /
• pp.1-8
• /
• 1990

We made a 12-Laser Diode Array consisting of 12 Graded Index Separate Confinement (GRINSCH) InGaAs/Inp Buried Heterostructure 4 Quantum Well Laser Diodes and examined the potential of controlling lasing operation of each laser diode by the voltage to its electroabsorption region. Using Si V-Groove with 12 V-grooves, a 12-Laser Diode Array, and 12 optical fibers, we investigated the various characteristics of each laser diode by changing the voltage to its electro-absorption region. Finally, we thought over the promising way of implementing optical local area communication between electric circuit boards or between subscribers and a central office using a 12-Laser Diode Array, Si V-groove, and optical fibers.

• Proceedings of the KIEE Conference
• /
• 1993.07b
• /
• pp.572-574
• /
• 1993

In order to obtain superior breakdown properties of Epoxy/$SiO_2$ composite materials at room and high temperature, the simultaneous interpenetrating polymer networks(SIN) is introduced into the Epoxy resin. As a result, it is observed that dielectric breakdown strength tends to increase according to the following order ; Epoxy/$SiO_2$ specimens, specimens treated with coupling agent and SIN introduced specimens which have stable temperature characteristics at room and high temperature. For introducing SIN Epoxy/$SiO_2$ composite material, rise of glass transition temperature and suppression of defects in its internal structure is achieved. This in turn improves the dielectric breakdown strength and the heat proof property of Epoxy/$SiO_2$ composite materials.

• The Transactions of the Korean Institute of Electrical Engineers D
• /
• v.54 no.6
• /
• pp.409-416
• /
• 2005

For broadband high-data-rate power line communication with the allocated frequency bandwidth from 2 to 30 MHz on medium voltage (MV) distribution power lines, a signal coupling unit is developed. The coupling unit is composed of a coupling capacitor for coupling communication signal, a drain coil, and an impedance matching part. The coupling capacitor made of ceramic capacitor is designed for transmission property of better than 1 dB in the frequency range. The drain coil is used for preventing low frequency high voltage from junction of medium voltage power line in case that a coupling capacitor is not working properly any more. Also, using ferrite core, a novel broadband impedance matching transformer is developed. A complete coupling unit with a coupling capacitor, a drain coil, and a matching transformer is housed by polymer for good isolation and distinguishing from high voltage electric facilities. Each is fabricated and its frequency behavior is tested. Finally, complete signal couplers are equipped in a MV PLC test bed and their performance are measured. The measurement shows that the coupling capacitor works excellently.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2008.12a
• /
• pp.276.1-276.1
• /
• 2008