• Title/Summary/Keyword: Si-H bonds

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Optimized ultra-thin tunnel oxide layer characteristics by PECVD using N2O plasma growth for high efficiency n-type Si solar cell

  • Jeon, Minhan;Kang, Jiyoon;Oh, Donghyun;Shim, Gyeongbae;Kim, Shangho;Balaji, Nagarajan;Park, Cheolmin;Song, Jinsoo;Yi, Junsin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.308-309
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    • 2016
  • Reducing surface recombination is a critical factor for high efficiency silicon solar cells. The passivation process is for reducing dangling bonds which are carrier. Tunnel oxide layer is one of main issues to achieve a good passivation between silicon wafer and emitter layer. Many research use wet-chemical oxidation or thermally grown which the highest conversion efficiencies have been reported so far. In this study, we deposit ultra-thin tunnel oxide layer by PECVD (Plasma Enhanced Chemical Vapor Deposition) using $N_2O$ plasma. Both side deposit tunnel oxide layer in different RF-power and phosphorus doped a-Si:H layer. After deposit, samples are annealed at $850^{\circ}C$ for 1 hour in $N_2$ gas atmosphere. After annealing, samples are measured lifetime and implied Voc (iVoc) by QSSPC (Quasi-Steady-State Photo Conductance). After measure, samples are annealed at $400^{\circ}C$ for 30 minute in $Ar/H_2$ gas atmosphere and then measure again lifetime and implied VOC. The lifetime is increase after all process also implied VOC. The highest results are lifetime $762{\mu}s$, implied Voc 733 mV at RF-power 200 W. The results of C-V measurement shows that Dit is increase when RF-power increase. Using this optimized tunnel oxide layer is attributed to increase iVoc. As a consequence, the cell efficiency is increased such as tunnel mechanism based solar cell application.

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Purification and Characterization of a Lectin from Arisaema tortuosum Schott Having in-vitro Anticancer Activity against Human Cancer Cell Lines

  • Dhuna, Vikram;Bains, Jagmohan Singh;Kamboj, Sukhdev Singh;Singh, Jatinder;Shanmugavel;Saxena, Ajit Kumar
    • BMB Reports
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    • v.38 no.5
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    • pp.526-532
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    • 2005
  • A lectin with in-vitro anticancer activity against established human cancer cell lines has been purified by affinity chromatography on asialofetuin-linked amino activated silica beads from the tubers of Arisaema tortuosum, popularly known as Himalayan Cobra lily, a monocot plant from the family Araceae. The bound Arisaema tortuosum lectin (ATL) was eluted with glycine-HCl buffer, pH 2.5. ATL was effectively inhibited by asialofetuin, a complex desialylated serum glycoprotein as well as by N-acetyl-D-lactosamine, a disaccharide. It gave a single band corresponding to a subunit molecular weight of 13.5 kDa in SDS-PAGE, pH 8.8 both under reducing and non reducing conditions. When subjected to gel-filtration on Biogel P-200, it was found to have a molecular weight of 54 kDa, suggesting a homotetramer structure, in which individual polypeptides are not bound to each other with disulfide bonds. ATL is a glycoprotein with 0.9% carbohydrate content, stable up to $55^{\circ}C$ and at pH 2 to 10. The lectin had no requirement for divalent metal ions i.e. $Ca^{2+}$ and $Mn^{2+}$ for its activity. However, as reported for other monocot lectins, ATL gave multiple bands in isoelectric focusing and Native PAGE, pH 8.3. The lectin was found to inhibit in vitro proliferation of human cancer cell lines HT29, SiHa and OVCAR-5.

Thermally Induced Metastability in Boron-Doped Amorphous Silicon Thin Film Transistor (보론 도우핑된 비정질 실리콘 박막 트랜지스터의 열에 의한 준안정성 연구)

  • Lee, Yi-Sang;Chu, Hye-Yong;Jang, Jin
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.26 no.3
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    • pp.130-136
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    • 1989
  • Electrical transport and thermally induced metastability in hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) using boron-doped amorphous silicon as an active layer have been studied. The device characteristics n-channel and p-channel operations. The thermal quenching experiments on amorphous silicon-silicon nitride ambipolar TFT give clear evidence for the co-existence of two distinct metastable changes. The densities of metastable active dopants and dangling bonds increase with the quenching temperature. On the other hand, the interface state density appears to decrease with increasing quenching temperature.

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Enhancement and Quenching Effects of Photoluminescence in Si Nanocrystals Embedded in Silicon Dioxide by Phosphorus Doping (인의 도핑으로 인한 실리콘산화물 속 실리콘나노입자의 광-발광현상 증진 및 억제)

  • Kim Joonkon;Woo H. J.;Choi H. W.;Kim G. D.;Hong W.
    • Journal of the Korean Vacuum Society
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    • v.14 no.2
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    • pp.78-83
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    • 2005
  • Nanometric crystalline silicon (no-Si) embedded in dielectric medium has been paid attention as an efficient light emitting center for more than a decade. In nc-Si, excitonic electron-hole pairs are considered to attribute to radiative recombination. However the surface defects surrounding no-Si is one of non-radiative decay paths competing with the radiative band edge transition, ultimately which makes the emission efficiency of no-Si very poor. In order to passivate those defects - dangling bonds in the $Si:SiO_2$ interface, hydrogen is usually utilized. The luminescence yield from no-Si is dramatically enhanced by defect termination. However due to relatively high mobility of hydrogen in a matrix, hydrogen-terminated no-Si may no longer sustain the enhancement effect on subsequent thermal processes. Therefore instead of easily reversible hydrogen, phosphorus was introduced by ion implantation, expecting to have the same enhancement effect and to be more resistive against succeeding thermal treatments. Samples were Prepared by 400 keV Si implantation with doses of $1\times10^{17}\;Si/cm^2$ and by multi-energy Phosphorus implantation to make relatively uniform phosphorus concentration in the region where implanted Si ions are distributed. Crystalline silicon was precipitated by annealing at $1,100^{\circ}C$ for 2 hours in Ar environment and subsequent annealing were performed for an hour in Ar at a few temperature stages up to $1,000^{\circ}C$ to show improved thermal resistance. Experimental data such as enhancement effect of PL yield, decay time, peak shift for the phosphorus implanted nc-Si are shown, and the possible mechanisms are discussed as well.

Dehydrocoupling of Bis(silyl)alkylbenzenes to Network Polysilanes, Catalyzed by Group 4 Metallocene Combination

  • Kim, Myoung-Hee;Lee, Jun;Moo, Soo-Yong;Kim, Jong-Hyun;Ko, Young Chun;Woo, Hee-Gweon
    • Journal of Integrative Natural Science
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    • v.3 no.1
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    • pp.1-6
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    • 2010
  • Bis(silyl)alkylbenzenes such as bis(1-sila-sec-butyl)benzene (1) and 2-phenyl-1,3-disilapropane (2) were synthesized in high yields by the reduction of the corresponding chlorosilanes with $LiAlH_4$ in diethyl ether. The dehydrocoupling of 1 and 2 was performed using group IV metallocene complexes generated in situ from $Cp_2MCl_2$/Red-Al and $Cp_2MCl_2$/n-BuLi (M = Ti, Hf), producing two phases of polymers. The TGA residue yields of the insoluble polymers were in the range of 64-74%. The molecular weights of the soluble polymers produced ranged from 700 to 5000 ($M_w$ vs polystyrene using GPC) and from 500 to 900 ($M_w$ vs polystyrene using GPC). The dehydropolymerization of 1 and 2 seemed to initially produce a low-molecular-weight polymer, which then underwent an extensive cross-linking reaction of backbone Si-H bonds, leading to an insoluble network polymer.

Mineralogy and Geochemistry of Green-colored Cr-bearing Sericite from Hydrothermal Alteration Zone of the Narim Gold Deposit, Korea (나림 금광상의 열수변질대에서 산출되는 녹색크롬-견운모의 광물학적 및 지구화학적 특징)

  • Lee, Hyun Koo;Lee, Chan Hee
    • Economic and Environmental Geology
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    • v.30 no.4
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    • pp.279-289
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    • 1997
  • Dark to pale green-colored, Cr-bearing sericites from hydrothermal alteration zone of the Narim gold deposit were investigated mineralogically and geochemically. The alteration zone is composed mineralogically of quartz, carbonate minerals and green sericite with minor amounts of chlorite, barite and sulfide minerals (pyrite, sphalerite, galena). The zone is enriched in As (967 to 1520 ppm), Cu (31 to 289 ppm), Ni (1027 to 1205 ppm), Pb (0.20 to 1.24 wt.%) and Zn (1.03 to 1.07 wt. %) compared with fresh rocks such as granitic gneiss, porphyritic biotite granite and basic dyke. The Cr, probably the chromophore element, is highly enriched in the alteration zone (1140 to 1500 ppm), host granitic gneiss (1200 ppm) and porphyritic biotite granite (1200 ppm). Occurrence and grain size of sericite are diverse, but most of the Cr-bearing sericites (150 to $200{\mu}m$ long and 20 to $30{\mu}m$ wide) occur along the boundaries between ore veins and host rocks (especially basic dyke and granitic gneiss). X-ray diffraction data of the sericite show its monoclinic form with unit-cell parameters of $a=5.202{\AA}$, $b=8.994{\AA}$, $c=20.103{\AA}$, ${\beta}=95.746^{\circ}$ and $V=935.83{\AA}^3$, which are similar with the normal 2M1-type muscovite. Representative chemical formula of the sericite is ($K_{1.54}Ca_{0.03}Na_{0.01}$)($Al_{3.42}Mg_{0.38}Cr_{0.14}Fe_{0.06}V_{0.02}$)($Si_{6.69}Al_{1.31}$)$O_{20}(OH)_4$. The Cr content increases with decrease of the octahedral Al content, and ranges from 0.36 to 2.58 wt.%. DTA and TG curves of the sericite show endothermic peaks at $342^{\circ}$ to $510^{\circ}$, $716^{\circ}$ to $853^{\circ}$ and $1021^{\circ}C$, which are due to the expulsion of hydroxyl group. The total weight loss by heating is measured to be about 8.8 wt. %, especially at $730^{\circ}C$. Infrared absorption experiments of the sericite show broad absorption band due to the O-H bond stretching vibration near the $3625cm^{-1}$, coupled with the 825 and $750cm^{-1}$ doublet. The vibration bands related with the H-O-Al and Si-O-Al bonds occur at $1030cm^{-1}$ and 500 to $700cm^{-1}$, respectively. Based on paragonite content of the sericite, the formation temperature of the Narim gold deposit is calculated to be $220{\pm}10^{\circ}C$.

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Effect of substrate bias voltage on a-C:H film (기판 bias 전압이 a-C:H 박막의 특성에 미치는 영향)

  • 유영조;김효근;장홍규;오재석;김근식
    • Journal of the Korean Vacuum Society
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    • v.6 no.4
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    • pp.348-353
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    • 1997
  • Hydrogenated amorphous carbon(a-C:H) films were deposited on p-type Si(100) by DC saddle-field plasma enhanced CVD to investigate the effect of substrate bias on optical properties and structural changes. They were deposited using pure methane gas at a wide range of substrate bias at room temperature and 90 mtorr. The substrate bias voltage ($V_s$) was employed from $V_s=0 V$ to $V_s=400 V$. The information of optical properties was investigated by photoluminescence and transmitance. Chemical bondings of a-C:H have been explored from FT-IR and Raman spectroscopy. The thickness and relative hydrogen content of the films were measured by Rutherford backscattering spectroscopy (RBS) and elastic recoil detection (ERD) technigue. The growth rate of a-C:H film was decreased with the increase of $V_s$, but the hydrogen content of the film was increased with the increase of $V_s$. The a-C:H films deposited at the lowest $V_s$ contain the smallest amount of hydrogen with most of C-H bonds in the of $CH_2$ configuration, whereas the films produced at higher $V_s$ reveal dominant the $CH_3$ bonding structure. The emission of white photoluminescence from the films were observed even with naked eyes at room temperature and the PL intensity of the film has the maximum value at $V_s$=200 V. With $V_s$ lower than 200 V, the PL intensity of the film increased with V, but for V, higher than 200 V, the PL intensity decreased with the increase of $V_s$. The peak energy of the PL spectra slightly shifted to the higher energy with the increase of $V_s$. The optical bandgap of the film, determined by optical transmittance, was increased from 1.5 eV at $V_s$=0V to 2.3 eV at $V_s$=400 V. But there were no obvious relations between the PL peak and the optical gap which were measured by Tauc process.

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Complex Formation of Transition and Post-Transition Metal Ions with 1,15-Diaza-3,4 : 12,13-dibenzo-5,8,11-trioxacyclooctadecane (전이 및 중금속이온과 1,15-diaza-3,4 : 12,13-dibenzo-5,8,11-trioxa-cyclooctadecane과의 착물형성)

  • Kim, Si-Joong;Lee, Myung-Jae;Koo, Chang-Hyung;Woo, Kyoun-Ja
    • Journal of the Korean Chemical Society
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    • v.35 no.6
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    • pp.645-652
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    • 1991
  • The stability constants$(K_f)$ of the complexes of some transition and post-transition metal ions (Co(Ⅱ), Ni(Ⅱ), Cu(Ⅱ), Zn(Ⅱ), Cd(Ⅱ), Pb(Ⅱ), Hg(Ⅱ)) with $N_2O_3$-donor macrocyclic ligand, 1,15-diaza-3,4 : 12,13-dibenzo-5,8,11-trioxacyclooctadecane ($NtnOdienH_4$), have been determined by potentiometry in aqueous solution at $25^{\circ}C$. Log $K_f$ values of the complexes were : Co(Ⅱ): 3.83, Ni(Ⅱ) : 4.56, Cu(Ⅱ) : 7.74, Zn(Ⅱ) : 4.98, Cd(Ⅱ) : 3.91, Pb(Ⅱ) : 6.65, and Hg(Ⅱ) : 14.87. The order of stabilities of transition metal complexes was the same as the natural order of stability proposed by Williams-Irving. In post-transition metal complexes, the order of stabilities was Cd(Ⅱ) < Pb(Ⅱ) < Hg(Ⅱ), and the covalent character in metal ion-donor atoms bonds appeared a dominant factor in the stability. In methanol solution, each metal ion forms 1 : 1 complex, while Ni(Ⅱ) ion forms both 1 : 1 and 1 : 2 complexes. It was confirmed by $^1H-$ and $^{13}C-$NMR spectral study that the nitrogen atoms in the ligand were major contributors for the complexation of post-transition metal ions with the ligand. It was shown, by elementry analysis, electrical conductivity and magnetic susceptibility measurements, and spectral analysis, that solid Cu(Ⅱ)-and Zn(Ⅱ)-complexes have a distorted octahedral and a tetrahedral structure, respectively.

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