• Electrical & Electronic Materials
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• v.9 no.4
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• pp.372-378
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• 1996

The phtoreflectance(PR) spectra of B ion implanted semi-insulating(SI) GaAs were studied. Ion implantation was performed by 150keV implantation energy and 1*10/aup 12/-10$^{15}$ ions/c $m^{2}$ doses. Electronic band structure was damaged by ion implantation with above 1*10$^{13}$ ions/c $m^{2}$ dose. When samples were annealed, " peak was observed at 30-40meV below band gap( $E_{g}$). It should be noted that this energy is close to the ionization energies of S $i_{As}$ , and GeAs in G $a_{As}$ which are also found as impurities in LEC GaAs, it is therefore possible that this feature is related to S $i_{As}$ , or G $e_{As}$ and B ions by implanted defect associated with them. From PR spectra of etched samples which is as-implanted by 1*10$^{14}$ and 1*10$^{15}$ ions/c $m^{2}$ dose, the depth of destroyed electronic band structure was from surface to 0.2.mu.m below surface.nic band structure was from surface to 0.2.mu.m below surface.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.2
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• pp.83-87
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• 2004

Phase noise performance and current consumption of Radio Frequency (RF) Voltage-Controlled Oscillator (VCO) are largely dependent on the Quality (Q) factor of inductor-capacitor (LC) tank. Because the Q-factor of LC tank is determined by on-chip spiral inductor, we designed, analyzed, and modeled on-chip differential inductor to enhance differential Q-factor, reduce current consumption and save silicon area. The simulated inductance is 3.3 nH and Q-factor is 15 at 2 GHz. Self-resonance frequency is as high as 13 GHz. To verify its use to RF applications, we designed 2 GHz differential LC VCO. The measurement result of phase noise is -112 dBc/Hz at an offset frequency of 100 kHz from a 2GHz carrier frequency. Tuning range is about 500 MHz (25%), and current consumption varies from 5mA to 8.4 mA using bias control technique. Implemented in $0.35-{\mu}m$ SiGe BiCMOS technology, the VCO occupies $400\;um{\times}800\;um$ of silicon area.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.6
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• pp.712-717
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• 2014

The performance of npn SiGe HBT on thin film SOI is investigated at 32 nm technology node by applying body bias. An n-well is created underneath thin BOX to isolate the body biased SOI HBT from SOI CMOS. The results show that the HBT voltage gain and power gain can be programmed by applying body bias to the n-well. This HBT can be used in variable gain amplifiers that are widely used in the receiver chain of RF systems. The HBT is compatible with 32 nm FDSOI technology having 10 nm film thickness and 30 nm BOX thickness. As the breakdown voltage increases by applying the body bias, the SOI HBT with 3 V $V_{CE}$ has very high $f_tBV_{CEO}$ product (839 GHzV). The self heating performance of the proposed SOI HBT is studied. The high voltage gain and power gain (60 dB) of this HBT will be useful in designing analog/RF systems which cannot be achieved using 32 nm SOI CMOS (usually voltage gain is in the range of 10-20 dB).

• Journal of electromagnetic engineering and science
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• v.14 no.4
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• pp.411-414
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• 2014

A switch is one of the most useful circuits for controlling the path of signal transmission. It can be added to digital circuits to create a kind of gate-level device and it can also save information into memory. In RF subsystems, a switch is used in a different way than its general role in digital circuits. The most important characteristic to consider when designing an RF switch is keeping the isolation as high as possible while also keeping insertion loss as low as possible. For high isolation, we propose leakage signal cancellation and inductive switching for designing a singlepole double-throw (SPDT) RF switch. By using the proposed method, an isolation level of more than 23 dB can be achieved. Furthermore, the heterojunction bipolar transistor (HBT) process is used in the RF switch design to keep the insertion loss low. It is demonstrated that the proposed RF switch has an insertion loss of less than 2 dB. The RF switch operates from 1 to 8 GHz based on the $0.18-{\mu}m$ SiGe HBT process, taking up an area of $0.3mm^2$.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.64 no.3
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• pp.433-437
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• 2015

We have designed and fabricated a low power and high linearity up down convertor for wireless repeaters using $0.35{\mu}m$ SiGe Bipolar CMOS technology. Repeater is composed of a wideband up/down converting mixer, programmable gain amplifiers (PGA), input buffer, LO buffer, filter driver amplifier and integer-N phase locked loop (PLL). As of the measurement results, OIP3 of the down conversion mixer and up conversion mixer are 32 dBm and 17.8 dBm, respectively. The total dynamic gain range is 31 dB with 1 dB gain step resolution. The adjacent channel leakage ratio (ACLR) is 59.9 dBc. The total power consumption is 240 mA at 3.3 V.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2016.05a
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• pp.691-692
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• 2016

본 논문은 802.11a 무선 랜용 5.25-GHz BiCMOS 저 잡음 증폭기를 제안한다. 이러한 회로는 1볼트 전원에서 동작하며, 저 전압 전원 공급에서도 높은 전압 이득을 가지도록 설계하였다. 제안한 회로는 $0.18{\mu}m$ SiGe HBT BiCMOS로 설계되어 있다. 저 전압 및 저 전력 동작을 위해 바이어스 회로는 밴드 갭 참조 (band-gap reference circuit) 바이어스 회로를 사용하였다. 제안한 회로는 최근 발표된 연구결과에 비해 높은 전압이득, 낮은 잡음지수 및 작은 칩 크기 특성을 보였다.

• Journal of Haehwa Medicine
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• v.9 no.1
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• pp.399-407
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• 2000

According to the literature on the genital cold sign, results were as follows. 1. Genital cold sign is that patient feel cold the part outer reproductive system. 2. The primary cause of genital cold sign is the kidney yang vacuity, and the others are the spleen vacuity, fulling down damp-heat, vacuity consumption, frenetic movement of ministerial fire, dedilitation of kidney yin, insecurity of kidney yang, impairment spleen with vacuity consumption, 3. The primary treatment of genital cold sign is warming and recuperating kidney, and the others are enrich yin and norishing blood, supplement the vital energy and enrich blood, clearing away dampness, etc. 4. For the medical prescriptions are used PalMiHyan(八味丸), GeJiGaYongGolMoReoTang(桂枝加龍骨牡蠣湯), GoJinTang(固眞湯), GaGamNaiGoHyan(加減內固丸), SipBoHyan(十補丸), YoSuYuTang(吳茱萸湯), ChungHonTang(淸魂湯), HuiChunSan(回春散), JoYangSan(助陽散), ChungHonTang(淸魂湯), YoncDamSaGanTane(龍膽瀉肝湯), SiHo-SoengSoepTang(柴胡勝濕湯).

• The Magazine of the Society of Air-Conditioning and Refrigerating Engineers of Korea
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• v.30 no.6
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• pp.49-54
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• 2001

1990년대 중반부터 후반에 결쳐 미국의 Astronautics사와 Ames연구소에 의한 공동연구결과는 자기냉동이 실현 가능한기술이며 가스액화,음식 냉동 및 저장, 대규모 건물 공조 등에 있어서 기존의 증기압축냉동에 필적할 만하다는 것을 밝혔다. 더 최근의 연구와 개발 노력은 자기장 원(source)으로 $Nd_2Fe_{14}B$ 영구자석배열을 이용한 회전식 자기냉동기가 가정용 공조기나 냉동/냉장고에 사용될 수 있음을 나타내고있다. Gd 금속구를 사용한 2단 자기 냉동/냉장고의 예비설계는 냉동실 온도가 $-12^{\circ}C(10^{\circ}F)$, 냉동실 온도가 $-1^{\circ}C(30^{\circ}F)$에서 전체 성능계수 3 그리고 냉각능력 120W를 얻을 수 있음을 제시한다. 자기장 원으로서 개선된 영구자석 배열을 이용한다면 카르노 효율의 60%와 성능계수 4.5에 이를 수 있을 것으로 보여진다. 그리고 자기냉동은 오존층 파괴물질 (CFC's)이나 온설가스(HCFC's와 HFC's)를 사용하지 않기 때문에 깨끗한 환경을 만드는데 기여한다. 동시에 상용 Gd으로부터 거대한 자기열량효과를 가진 재료인 $Gd_5(Si_2Ge_2)$를 kg 단위로 생산할 수 있는 정도로 연구가 진전되었다. 이 신재료를 저렴한 가격에 얻을 수 있게 됨으로써 Gd 금속을 자기냉매로 사용하도록 설계 되었던 공조기나 냉동/냉장고의 효율이 더 좋아질 것으로 예상된다.

• The Journal of Korean Medicine Ophthalmology and Otolaryngology and Dermatology
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• v.12 no.1
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• pp.356-368
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• 1999

The gu-chang is oriental medical disease name. This study has been carried out to investigate pathogenic factor, pathogenesis, treatment method and medicine of the gu chang by referring to literatures. The results were obtained as follows; 1. Pathogenic factors are pungent taste, stir frying, rich and fatty diet, alchol, disorder of emotion, exogenous pathogen, excessive fatigue and indulgence in sexual activities. 2. Pathogenesis of the gu chang is that the fire heat go up to the mouse. 3. The symptoms are divided into two syndrome. one is sthenia syndrome(實證) - red color and swelling, unendurable pain, strong pulse(脈實), the other is asthenia syndrome(虛症) - pink color, a slight pain, relapse, loose stool, feeble pulse(脈虛). 4. The treatment method is divided into two parts. one is a sthenic syndrome (實證) - clearing strong heat (淸實熱), the other is a asthenic syndrome(虛症) - nourishing yin(滋陰) and clearing deficient heat (淸虛熱), reinforcing the spleen and strengthening middle - JIAO(健脾 補中). 5. The prescription were liang ge san(凉膈散), Ij jhong tang(理中湯) ,xie xim tang(瀉心湯), bu ja li jhong tang, (附子理中湯),liuwei wan(六味元), ba wei wan(八味元), zhuye shigao tang(竹葉石膏湯), si wu tang(四物湯), bu zhong yi gi tang(補中益氣湯) etc.

• Korean Journal of Materials Research
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• v.33 no.4
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• pp.164-174
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• 2023

The bandgap characteristics of semiconductor materials are an important factor when utilizing semiconductor materials for various applications. In this study, based on data provided by AFLOW (Automatic-FLOW for Materials Discovery), the bandgap of a semiconductor material was predicted using only the material's compositional features. The compositional features were generated using the python module of 'Pymatgen' and 'Matminer'. Pearson's correlation coefficients (PCC) between the compositional features were calculated and those with a correlation coefficient value larger than 0.95 were removed in order to avoid overfitting. The bandgap prediction performance was compared using the metrics of R² score and root-mean-squared error. By predicting the bandgap with randomforest and xgboost as representatives of the ensemble algorithm, it was found that xgboost gave better results after cross-validation and hyper-parameter tuning. To investigate the effect of compositional feature selection on the bandgap prediction of the machine learning model, the prediction performance was studied according to the number of features based on feature importance methods. It was found that there were no significant changes in prediction performance beyond the appropriate feature. Furthermore, artificial neural networks were employed to compare the prediction performance by adjusting the number of features guided by the PCC values, resulting in the best R² score of 0.811. By comparing and analyzing the bandgap distribution and prediction performance according to the material group containing specific elements (F, N, Yb, Eu, Zn, B, Si, Ge, Fe Al), various information for material design was obtained.