• Journal of Korean Society of Water and Wastewater
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• v.25 no.3
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• pp.399-405
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• 2011

In a desalination technology using RO membranes, chemical cleaning makes damage for membrane surface and membrane life be shortened. In this research cleaning technology using direct osmosis (DO) was introduced to apply it under the condition of high pH and high concentration of feed. When the high concentration of feed is injected to the concentrate side after release of operating pressure, then backward flow occurred from treated water toward concentrated for osmotic pressure. This flow reduces fouling on the membrane surface. Namely, flux of DO was monitored under pH 3, 5, 10 and 12 conditions at feed concentrations of NaCl 40,000 mg/L, 120,000 mg/L and 160,000 mg/L. As a result, DO flux in pH 12 increased about 21% than pH 3. DO cleaning was performed under the concentrate NaCl 160,000 mg/L of pH 12 during 20 minutes. Three kinds of synthetic feed water were used as concentrates. They consisted of organic, inorganic and seawater; chemicals of SiO2 (200 mg/L), humic acid (50 mg/L) sodium alginate (50 mg/L) and seawater. As a result, fluxes were recovered to 17% in organic fouling, 15% in inorganic fouling and 14% of seawater fouling after cleaning using DO under the condition of concentrate NaCl 160,000 mg/L of pH 12.

• Bulletin of the Korean Chemical Society
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• v.18 no.6
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• pp.618-622
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• 1997

The polysiloxane-bridged dinuclear metallocenes $[(SiMe_2O)_n-SiMe_2(C_5H_4)_2][(C_9H_7)ZrCl_2]_2$ (n=1 (7), 2 (8), 3 (9)) have been generated as a model complex for the immobilized metallocene at silica surface by treating the respective disodium salts of the ligands with 2 equivalents of $(C_9H_7)ZrCl_3$ in THF. All three complexes are characterized by $^1H$ NMR and measurement of metal content through ICP-MS. It turned out that the values of ${\Delta}{\delta}=[{\delta}_d-{\delta}_p]$, the chemical shift difference between the distal $({\delta}_d)$ and proximal $({\delta}_p)$ protons, for the produced dinuclear compounds (0.47 for 7, 0.49 for 8, and 0.5 for 9) were larger than the Δδ value of the known ansa-type complex holding the same ligand as a chelating one, that is just the opposite to the normal trend. In order to compare polymerization behavior of the dinuclear metallocene with the corresponding mononuclear metallocene, (Cp)$(C_9H_7)ZrCl_2$ was separately prepared. To investigate the catalytic properties of the dinuclear complexes and mononuclear metallocenes ethylene polymerization has been conducted in the presence of MMAO. The polymerization results display the typical activity dependence on polymerization temperature for all complexes. The most important feature is that the polymers from the dinuclear metallocenes represent enormously improved molecular weight compared with the polymer from the corresponding mononuclear metallocene. In addition, the influence of the nature of the bridging ligand upon the reactivities of the dinuclear metallocenes has also been observed.

• Korean Journal of Materials Research
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• v.14 no.5
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• pp.343-347
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• 2004

We investigated the growth feasibility of polycrystalline Si film on mica substrate for the transfer of the layer to a plastic substrate. The annealing temperature was limited up to $600^{\circ}C$ because of crack development in the mica substrate. Amorphous Si film was deposited on mica substrate by PECVD and was crystallized by furnace annealing. During the annealing, bubbles were formed at the Si/mica interface. The bubble formation was avoided by the Ar-plasma treatment before amorphous Si deposition. A uniform and clean polycrystalline Si film was obtained by coating $NiCl_2$ on the amorphous Si film and annealing at $500^{\circ}C$ for 10 h. The conventional Si lithography was possible on the mica substrate and the devices fabricated on the substrate could be transferred to a plastic substrate.

• Korean Journal of Materials Research
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• v.12 no.8
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• pp.650-655
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• 2002

$SiO_2$ gels containing dispersed fine Te metal particles have been prepared by the sol- gel method using a starting solution containing Tetraethoxy Silane (Si($OC_2$ $H_{5}$ )$_4$), $H_2$O, Ethylalchol ($C_2$$H_{5}$OH), Nitric Acid ($HNO_3$) and Tellurium Tetracholoride ($TeCl_4$) in a several molar ratio. Gelling time of sols was about 3 days and viscosity of solution was very low about 2~3 cP for 3 days. Heat-treatments of the gel have been performed at 500, 700, 900, 1100 and $1300^{\circ}C$ for 1 hour, respectively. We have investigated TG-DTA, X-ray diffraction patterns and SEM of heat-treatmented gels. The size of Te fine particles dispersed in $SiO_2$ gel was about 0.8~1 $\mu\textrm{m}$ and the shape was almost quadrangle.

• Journal of the Korean institute of surface engineering
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• v.24 no.4
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• pp.206-214
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• 1991

In the basic study of selective electroless Ni plating of Si wafers, plating rate and physical properties are investigated to obtain optimum conditions of contact hole filling. Si wafers are excellently activated in the concentration of 0.5M IF, 1mM PdCl2, 2mM EDTA at $70^{\circ}C$, 90sec. The optimum condition of Ni-B deposition on p-type Si wafers is 0.1M NiSO4, 0.11M Citrate, $70^{\circ}C$, pH6.8, 8mM DMAB. The main factor in the sheet resistences variation of films is amorphous and on heat treating matrix was transformed into a stable phase (Ni+Ni3B) at $300-400^{\circ}C$. But pH or DMAB concentration in the plating solution doesn't play role of heat-affected phase change.

• Korean Chemical Engineering Research
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• v.56 no.2
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• pp.291-296
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• 2018

Direct synthesis of methylchlorosilanes was developed by Rochow with addition of copper on the silicon surface as a catalyst and many research were followed. Most of research were focused on the increase of reaction activity through addition of promoters and concentrated on the increase of selectivity of DMDC. However, there are very few studies about the reaction mechanism. Although formation of DMDC was explained in literature, formation of other silanes were not mentioned at all. This reseach focused on the explanation about formation of all silanes obtained during direct reaction and TPD. Reaction paths were proposed by means of dissociative adsorption of methyl chloride and spillover of surface Cl and H. Surface silicon sites were considered as $=SlCl_2$ and $=Sl(CH_3)Cl$. The synthesis of all methylchlorosilanes were explained by the adsorption of methyl group on the silicon sites and by the surface diffusion of nearby Cl and H. The proposed reaction mechanism explains the formation of all silanes during the reaction and also during the TPD process.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.612-618
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• 1998

Monolithic SiC and SiC/C FGM layers were deposited on the graphite substrates by the CVD method and their thermal properties of the two specimens were investigated by thermal shock test for comparison. Temperature profiles and thermal stress distributions on thermal shock test were calculated by a commercially used computer program to see the thermal stress differences inside of two specimens. The specimens coated with FGM were expected to show a efficient relaxation of thermal stresses at the interface and they were not cracked under the actual $\Delta$T=1600 K experimental condition. This result proved that the experimental results were well accorded with the expectation from the theoretical calculations.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.231-231
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• 2012

7개 나라가 참여해서 공동으로 제작하고 있는 국제핵융합실험로(ITER)는 2020년경에 제작 설치가 완료될 예정이다. ITER 장치에는 6개의 시험 블랑켓 모듈(Test Blanket Module : TBM)이 장착될 예정이며, 그 중에서 한국도 1개를 독자적으로 제작해서 설치할 예정이다. 한국형 헬륨 냉각 고체형 증식(Helium Cooled Solid Breeder : HCSB) TBM이며, 한국은 ITER 참여국 중 유일하게 중성자 반사 재료를 채택한 것이 특징이다. 중성자 반사재료로는 지름 1 mm 내외의 흑연 페블에 SiC를 코팅해서 사용할 예정이다. SiC는 고온저방사화 물질로 차세대 핵융합로의 구조 재료로도 개발되고 있는 물질로, 이렇게 하면 흑연의 단점인 기계적 특성 향상뿐만 아니라, 산화나 화재 등에 대한 사고의 부담도 크게 줄일 수 있는 장점이 있다. 흑연위에 SiC를 코팅하는 방법은 여러 가지가 있으며, 그 중에서 비교적 간단한 건식 방법은 RF Sputtering, PECVD 등이 있다. 건식은 코팅방법이 간단하고 비교적 쉬운 편이지만 페블표면에 양질의 SiC 박막을 얻기가 쉽지 않은 단점이 있다. 이들 방법보다 습식법은 코팅이 까다롭지만 양질의 코팅막을 비교적 쉽게 얻을 수 있는 장점이 있다. CVD의 경우 전구체 물질로 여러 가지 물질이 사용될 수 있으며 대표적으로 $SiH_4$, $Si(CH_3)_4$, $CH_3SiCl_3$ 등이 있으며, 캐리어 가스로는 $H_2$가 사용된다. 이렇게 얻어진 SiC 코팅페블은 흑연에 비해 파괴강도도 향상되고 마모 등에 강한 것을 확인할 수 있었다.

• Transactions on Electrical and Electronic Materials
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• v.10 no.4
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• pp.131-134
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• 2009

The electrical properties and the microstructure of nitrogen-doped poly 3C-SiC films used for micro thermal sensors were studied according to different thicknesses. Poly 3C-SiC films were deposited by LPCVD (low pressure chemical vapor deposition) at $900^{\circ}C$ with a pressure of 4 torr using $SiH_2Cl_2$ (100%, 35 sccm) and $C_2H_2$ (5% in $H_2$, 180 sccm) as the Si and C precursors, and $NH_3$ (5% in $H_2$, 64 sccm) as the dopant source gas. The resistivity of the poly SiC films with a 1,530 ${\AA}$ thickness was 32.7 ${\Omega}-cm$ and decreased to 0.0129 ${\Omega}-cm$ at 16,963 ${\AA}$. The measurement of the resistance variations at different thicknesses were carried out within the $25^{\circ}C$ to $350^{\circ}C$ temperature range. While the size of the resistance variation decreased when the films thickness increased, the linearity of the resistance variation improved. Micro heaters and RTD sensors were fabricated on a $Si_3N_4$ membrane by using poly 3C-SiC with a 1um thickness using a surface MEMS process. The heating temperature of the SiC micro heater, fabricated on 250 ${\mu}m$${\times}$250 ${\mu}m$ $Si_3N_4$ membrane was $410^{\circ}C$ at an 80 mW input power. These 3C-SiC heaters and RTD sensors, fabricated by surface MEMS, have a low power consumption and deliver a good long term stability for the various thermal sensors requiring thermal stability.

• Journal of the Korean Ceramic Society
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• v.34 no.2
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• pp.131-138
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• 1997

Silicon carbide films were chemically vapor deposited onto graphite substrates using MTS(Ch3SiCl3) as a source and Ar or H2 as a diluent gas. The experiments were performed at a fixed condition such as a de-position temperature of 130$0^{\circ}C$, a total pressure of 10 torr, and a flow rate of 100 sccm for each MTS and carrier gas. The purpose of this study is to consider the variation of the growth behavior with the addition of each diluent gas. It is shown that the deposition rate leads to maximum value at 200 sccm addition ir-respective of diluent gases and the deposition rate of Ar addition is faster than that of H2 one. It seems that these characteristics of deposition rate are due to varying interrelationship between boundary layer thick-ness and the concentration of a source with each diluent gas addition, when overall deposition rate is con-trolled by mass transport kinetics. The preferred orientation of (220) plane was maintained for the whole range of Ar addition. However, above 200 sccm addition, especially that of (111) plane was more increased in proportion to H2 addition. Surface morphologies of SiC films were the facet structures under Ar addition, but those were gradually changed from facet to smooth structures with H2 addition. Surface roughness be-came higher in Ar, but it became lower in H2 with increasing the amount of diluent gas.