• Title/Summary/Keyword: Si tip

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Dendrite Tip Shapes of Pivalic Acid-Ethanol and Succinonitrile-Salol Systems (Pivalic Acid-Ethanol 및 Succinonitrile-Salol 계에서의 수지상정 선단의 형상)

  • Suk, Myung-Jin;Park, Young-Min;Oh, Sung-Tag;Chang, Si-Young
    • Korean Journal of Metals and Materials
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    • v.49 no.7
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    • pp.570-576
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    • 2011
  • The shape of a dendrite tip has long been approximated by a paraboloid of revolution, but many attempts have been made as well to more accurately match the dendrite tip profile using other mathematical functions: power function, 4th order polynomial, and hyperbolic function. In the present work, dendrite tip shapes were matched by parabolic function. The differences between the dendrite tip shapes of pivalic acid(PVA)-ethanol(Eth) and succinonitrile(SCN)-salol systems, characterized by anisotropic and isotropic solid-liquid interfacial properties, respectively, were quantitatively treated using shape parameters. The PVA-Eth system showed a slightly higher Z/R value than the SCN-salol system, their Z/R values lying in the range 2-4. (Z is the distance from the tip beyond which the parabolic fit starts to deviate from the profile, and R the tip radius.) ${\lambda}_P$ is the distance from the tip beyond which side branching starts to appear, and is larger in the PVA-Eth system than the SCNsalol system. ${\lambda}_P$ is different for both sides of the 2-dimensional dendrite profile. The difference of ${\lambda}_P$ between both sides of the dendrite is larger for PVA-Eth system than for SCN-salol, implying that the dendrite of PVA-Eth is less symmetric than that of SCN-salol.

Adhesive and frictional behaviors of Mica between nanoscale and microscale (나노스케일과 마이크로스케일 사이에서 Mica 의 점착 및 마찰 거동)

  • Choi D.H.;Hwang W.B.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2005.06a
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    • pp.1151-1154
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    • 2005
  • The size effects for adhesive and frictional characteristics were studied. The specimen was Mica and the AFM tips were SiO2. The radii of SiO2 tip were 280, 380, 930, and 2230 nm on which tribological tests had never been performed. It was found that the adhesive forces and the frictional coefficients increased non-linearly with tip radius. Compared with previous studies at nanoscale and microscale, the results showed behaviors bridging each previous result. It could be said that these results were clues to explain the material behaviors between nanoscale and microscale both in adhesion and friction.

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Effect of Contact Conditions on the Micro-adhesion Characteristics using SPM (SPM을 이용한 접촉조건 변화에 따른 미소응착 특성 연구)

  • 윤의성;박지현;양승호;공호성
    • Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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    • 2000.11a
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    • pp.18-22
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    • 2000
  • An experimental study was carried out to investigate the effect of nano-contact condition on the nano-adhesion phenomena. SPM(scanning probe microscope) tips with different radius of curvature were fabricated by a series of masking and etching processes. DLC(diamond-like carbon) and W-DLC (tungsten-incorporated diamond-like carbon) were coated on (100) silicon wafer by PACVD(plasma assisted chemical vapor deposition). Pull-off forces of Pure Si-wafer, DLC and W-DLC were measured with SPM(scanning probe microscope). Also, the same series of tests were carried out with the tips with different radius of curvature. Results showed that DLC and W-DLC showed much lower pull-off force than Si-wafer and Pull-off force increased with the tip radius.

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Fabrication of Field-Emitter Arrays using the Mold Method for FED Applications

  • Cho, Kyung-Jea;Ryu, Jeong-Tak;Kim, Yeon-Bo;Lee, Sang-Yun
    • Transactions on Electrical and Electronic Materials
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    • v.3 no.1
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    • pp.4-8
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    • 2002
  • The typical mold method for FED (field emission display) fabrication is used to form a gate electrode, a gate oxide layer, and emitter tip after fabrication of a mold shape using wet-etching of Si substrate. However, in this study, new mold method using a side wall space structure was developed to make sharp emitter tips with the gate electrode. In new method, gate oxide layer and gate electrode layer were deposited on a Si wafer by LPCVD (low pressure chemical vapor deposition), and then BPSG (Boro phosphor silicate glass) thin film was deposited. After then, the BPSG thin film was flowed into the mold at high temperature in order to form a sharp mold structure. TiN was deposited as an emitter tip on it. The unfinished device was bonded to a glass substrate by anodic bonding techniques. The Si wafer was etched from backside by KOH-deionized water solution. Finally, the sharp field emitter array with gate electrode on the glass substrate was formed.

Fabrication of multicolor photochromic thin film

  • Kang, Bonghoon
    • Journal of Ceramic Processing Research
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    • v.13 no.spc2
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    • pp.373-376
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    • 2012
  • Thin films of Ag-SiO2-TiO2 composite oxides with SiO2/TiO2 of 20/80 molar compositions were prepared by the sol-gel method, using tetraethylorthosilicate (TEOS) and titanium isopropoxide (TIP) as precursors. Ag-SiO2-TiO2 films coated on commercial glass substrates have successfully been synthesized using sol-gel method. The Ag-SiO2-TiO2 film with 0.5% Ag-added concentration and 20 mol% SiO2-mixture gives optimal results on crystalline structure, optical property, surface area, and photochromic property. Absorption near the wavelength of the incident light decreased gradually. The reversibility of the two-photon writing process in Ag-SiO2-TiO2 film is clearly seen.

Localized Oxidation of (100) Silicon Surface by Pulsed Electrochemical Processes Based on AFM (AFM 기반 Pulse 를 이용한 전기화학적 가공)

  • Lee, Jeong-Min;Kim, Sun-Ho;Park, Jeong-Woo
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.34 no.11
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    • pp.1631-1636
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    • 2010
  • In this study, we demonstrate a nano-scale lithograph obtained on localized (100) silicon (p-type) surface using by modified AFM (Atomic force microscope) apparatuses and by adopting controlling methods. AFM-based experimental apparatuses are connected to a customized pulse generator that supplies electricity between the conductive tip and the silicon surface, while maintaining a constant humidity throughout the lithography process. The pulse durations are controlled according to various experimental conditions. The electrochemical reaction induced by the pulses occurs in the gap between the conductive tip and silicon surface and result in the formation of nanoscale oxide particles. Oxide particles with various heights and widths can be created by AFM surface modification; the size of the oxide particle depends on the pulse durations and the applied electrical conditions under a humid environment.

Fabrication of (100), (110), (111) Si Tips using Various Wet Etching Method (다양한 습식식각법을 이용한 (100), (110), (111) Si tip의 제작)

  • Park, Heung-Woo;Ju, Byeong-Kwon;Ko, Chang-Gi;Hong, Soon-Kwan;Oh, Myoung-Hwan;Kim, Chui-Ju
    • Proceedings of the KIEE Conference
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    • 1994.07b
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    • pp.1250-1253
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    • 1994
  • (100), (110) and (111) Si wafers are etched by isotropic etching method, anisotropic etching method using KOH etchant and EPW etchant and combined two-step etching method to compare the results. Isotopic etching method is effective in fabrication of wedge-shaped tips, especially (110) Si. Anisotropic etching method of (100) Si using EPW etchant can fabricate sharp cone-shaped tips and isotropic etching after anisotropic etching of (100) Si can fabricate wedge-shaped tips.

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Characterization of Electrical Properties of Si Nanocrystals Embedded in a $SiO_2$ Layer by Scanning Probe Microscopy (SPM (Scanning Probe Microscopy)을 이용한 $SiO_2$ layer에서의 실리콘 나노 크리스탈의 전기적 특성 분석)

  • Kim, Jung-Min;Her, Hyun-Jung;Son, J.M.;Lee, Eun-Hye;Khang, Yoon-Ho;Kang, Chi-Jung;Kim, Yong-Sang
    • Proceedings of the KIEE Conference
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    • 2005.07c
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    • pp.1900-1902
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    • 2005
  • 본 연구에서는 scanning probe microscopy(SPM)을 이용하여 국소영역에서 silicon nanocrystal(Si NC)의 전기적 특성을 분석하였다. Si NCs은 압축된 silicon powder를 laser로 분해하는 laser ablation 방식으로 제조되었고, sharpening oxidation 과정을 통하여 Si NC 주변에 oxide shell을 형성시켰다. 이 과정에서 Si NCs은 $10{\sim}50 nm$의 크기와 약 $10^{11}/cm^2$의 밀도로 $SiO_2$층에 증착되었다. SPM의 conducting tip을 통하여 전하는 각각의 Si NC로 주입되게 되고, 이로 인하여 발생하는 SCM image와 dC/dV curve의 변화를 통하여 Si NC에서 전하 거동을 모니터 하였다. 또한 국소영역에서 Si NC의 전기적 특성을 MOS capacitor 구조에서의 C-V 특성과 비교 분석하였다.

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