• Applied Chemistry for Engineering
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• v.20 no.6
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• pp.617-621
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• 2009

Zinc oxide (ZnO) nanorods were grown on the pre-oxidized silicon substrate with the assistance of Au and the fluorine-doped tin oxide (FTO) based on the catalysts by vapor-liquid-solid (VLS) synthesis. Two types of ZnO powder particle size, 20nm, $20{\mu}m$, were used as a source material, respectively The properties of the nanorods such as morphological characteristics, chemical composition and crystalline properties were examined by X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX) and field-emission scanning electron microscope (FE-SEM). The particle size of ZnO source strongly affected the growth of ZnO nanostructures as well as the crystallographic structure. All the ZnO nanostructures are hexagonal and single crystal in nature. It is found that $1030^{\circ}C$ is a suitable optimum growth temperature and 20 nm is a optimum ZnO powder particle size. Nanorods were fabricated on the FTO deposition with large electronegativity and we found that the electric potential of nanorods rises as the ratio of current rises, there is direct relationship with the catalysts, Therefore, it was considered that Sn can be the alternative material of Au in the formation of ZnO nanostructures.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.141-141
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• 2018

Copper is one of the most abundant metals on earth. Its oxide (CuO) is an intrinsically p-type metal-oxide semiconductor with a bandgap ($E_g$) of 1.2-2.0 eV 1. Copper oxide nanomaterials are considered as promising materials for a wide range of applications e.g., lithium ion batteries, dye-sensitized solar cells, photocatalytic hydrogen production, photodetectors, and biogas sensors 2-7. Recently, high-density and uniform CuO nanostructures have been grown on Cu foils in alkaline solutions 3. In 2011, T. Soejima et al. proposed a facile process for the oxidation synthesis of CuO nanobelt arrays using $NH_3-H_2O_2$ aqueous solution 8. In 2017, G. Kaur et al. synthesized CuO nanostructures by treating Cu foils in $NH_4OH$ at room temperature for different treatment times 9. The surface treatment of Cu in alkaline aqueous solutions is a potential method for the mass fabrication of CuO nanostructures with high uniformity and density. It is interesting to compare the gas sensing properties among CuO nanomaterials synthesized by this approach and by others. Nevertheless, none of above studies investigated the gas sensing properties of as-synthesized CuO nanomaterials. In this study, CuO nanowalls versus nanoparticles were synthesized via the oxidation process of Cu foil in NH4OH solution at $50-70^{\circ}C$. The gas sensing properties of the as-prepared CuO nanoplates were examined with $C_2H_5OH$, $CH_3COCH_3$, and $NH_3$ at $200-360^{\circ}C$.

• Journal of Powder Materials
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• v.22 no.6
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• pp.391-395
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• 2015

We report on the successful fabrication of ZnO nanorod (NR)/polystyrene (PS) nanosphere hybrid nanostructure by combining drop coating and hydrothermal methods. Especially, by adopting an atomic layer deposition method for seed layer formation, very uniform ZnO NR structure is grown on the complicated PS surfaces. By using zinc nitrate hexahydrate $[Zn(NO_3)_2{\cdot}6H_2O]$ and hexamine $[(CH_2)_6N_4]$ as sources for Zn and O in hydrothermal process, hexagonal shaped single crystal ZnO NRs are synthesized without dissolution of PS in hydrothermal solution. X-ray diffraction results show that the ZnO NRs are grown along c-axis with single crystalline structure and there is no trace of impurities or unintentionally formed intermetallic compounds. Photoluminescence spectrum measured at room temperature for the ZnO NRs on flat Si and PS show typical two emission bands, which are corresponding to the band-edge and deep level emissions in ZnO crystal. Based on these structural and optical investigations, we confirm that the ZnO NRs can be grown well even on the complicated PS surface morphology to form the chestnut-shaped hybrid nanostructures for the energy generation and storage applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.73-75
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• 2013

Atomic force microscopy (AFM) [1] can now not only image individual atoms but also construct atom letters using atom manipulation method [2]. Therefore, the AFM is the second generation atomic tool following the well-known scanning tunneling microscopy (STM). The AFM, however, has the advantages that it can image even insulating surfaces with atomic resolution and also measure the atomic force itself between the tip-apex outermost atom and the sample surface atom. Noting these advantages, we have been developing a novel bottom-up nanostructuring system, as shown in Fig. 1, based on the AFM. It can identify chemical species of individual atoms [3] and then manipulate selected atom species to the designed site one-by-one [2] to assemble complex nanostructures consisted of many atom species at room temperature (RT). In this invited talk, we will introduce our results toward atom-by-atom assembly of composite nanomaterials based on the AFM at RT. To identify chemical species, we developed the site-specific force spectroscopy at RT by compensating the thermal drift using the atom tracking. By converting the precise site-specific frequency shift curves, we obtained short-range force curves of selected Sn and Si atoms as shown in Fig. 2(a) and 2(b) [4]. Then using the atom-by-atom force spectroscopy at RT, we succeeded in chemical identification of intermixed three atom species in Pb/Sn/Si(111)-(${\surd}3$'${\surd}3$) surface as shown in Fig. 2(c) [3]. To create composite nanostructures, we found the lateral atom interchange phenomenon at RT, which enables us to exchange embedded heterogeneous atoms [2]. By combining this phenomenon with the modified vector scan, we constructed the atom letters "Sn" consisted of substitutional Sn adatoms embedded in Ge adatoms at RT as shown in Fig. 3(a)~(f) [2]. Besides, we found another kind of atom interchange phenomenon at RT that is the vertical atom interchange phenomenon, which directly interchanges the surface selected Sn atoms with the tip apex Si atoms [5]. This method is an advanced interchangeable single atom pen at RT. Then using this method, we created the atom letters "Si" consisted of substituted Si adatoms embedded in Sn adatoms at RT as shown in Fig. 4(a)~(f) [5]. In addition to the above results, we will introduce the simultaneous evaluation of the force and current at the atomic scale using the combined AFM/STM at RT.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.488.2-488.2
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• 2014

Carbon-based materials such as carbon nanotubes and graphene have emerged as promising building blocks in applications for nanoelectronics and energy devices due to electrical property, ease of processability, and relatively inert electrochemistry. In recent years, there has been considerable interest in core-shell nanomaterials, in which inorganic nanowires are surrounded by inorganic or organic layers. Especially, carbon encapsulated semiconductor nanowires have been actively investigated by researchers in lithium ion batteries. We report a method to synthesize silicon nanowire (SiNW) core/carbon shell structures by chemical vapor deposition (CVD), using methane (CH4) as a precursor at growth temperature of $1000{\sim}1100^{\circ}C$. Unlike carbon-based materials synthesized via conventional routes, this method is of advantage of metal-catalyst free growth. We characterized these materials with FE-SEM, FE-TEM, and Raman spectroscopy. This would allow us to use these materials for applications ranging from optoelectronics to energy devices such as solar cells and lithium ion batteries.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.411.2-411.2
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• 2014

The design of DNA nanostructures is of fundamental importance, the intrinsic value of DNA as a building-block material lies in its ability to organize other bio-molecules with nanometer-scale spacing. Here, we report the fabrication of DNA scaffolds with nano-pores (<10 nm size) that formed easily without the use of additives (i.e., avidin, biotin, polyamine, or inorganic materials) into large-scale structures by assembling DNA molecules at near room temperature ($30^{\circ}C$) and low pH (~5.5). Protein immobilization results also confirmed that a fibronectin (FN) proteins/large scale DNA scaffolds/aminopropylytriethoxysilane (APS)/SiO2/Si substrate with high sensitivity formed in a well-defined manner. The DNA scaffolds can be applied for use with DNA-based biochips, biophysics, and cell biology.

• Applied Microscopy
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• v.36 no.spc1
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• pp.25-33
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• 2006

Nanofabrication with finely focused ion and electron beams is reviewed, and position and size controlled fabrication of nano-metals and -semiconductors is demonstrated. A focused ion beam (FIB) interface attached to a column of 200keV transmission electron microscope (TEM) was developed. Parallel lines and dots arrays were patterned on GaAs, Si and $SiO_2$ substrates with a 25keV $Ga^+-FIB$ of 200nm beam diameter at room temperature. FIB nanofabrication to semiconductor specimens caused amorphization and Ga injection. For the electron beam induced chemical vapor deposition (EBI-CVD), we have discovered that nano-metal dots are formed depending upon the beam diameter and the exposure time when decomposable gases such as $W(CO)_6$ were introduced at the beam irradiated areas. The diameter of the dots was reduced to less than 2.0nm with the UHV-FE-TEM, while those were limited to about 15nm in diameter with the FE-SEM. Self-standing 3D nanostructures were also successfully fabricated.

• Journal of the Korean Society for Precision Engineering
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• v.21 no.5
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• pp.24-31
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• 2004

Masking effect of the nanoscratched silicon (100) surface was studied and applied to a maskless nanofabrication technique. First, the surface of the silicon (100) was machined by ductile-regime nanomachining process using the scratch option of the Nanoindenter${ \circledR}$ XP. To clarify the possibility of the nanoscratched silicon surfaces for the application to wet etching mask, the etching characteristic with a KOH solution was evaluated at room temperature. After the etching process, the convex nanostructures were made due to the masking effect of the mechanically affected layer. Moreover, the height and the width of convex structures were controlled with varying normal loads during nanoscratch.

• Journal of the Korean Vacuum Society
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• v.21 no.2
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• pp.99-105
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• 2012

We fabricated the textured silicon (Si) surface on Si substrates by the electrochemical etching using gold (Au) nanoparticle catalysts. The antireflective property of the fabricated Si nanostructures was improved. The Au nanoparticles of ~20-150 nm were formed by the rapid thermal annealing using thermally evaporated Au films on Si. In the chemical etching, the aqueous solution containing $H_2O_2$ and HF was used. In order to investigate the effect of electrochemical etching on the etching depth and reflectance characteristics, the sample was immersed in the aqueous etching solution for 1 min with and without applied cathodic voltages of -1 V and -2 V. As a result, the solar weighted reflectance, i.e., the averaged reflectance with considering solar spectrum (air mass 1.5), could be efficiently reduced for the electrochemically etched Si by applying the cathodic voltage of -2 V, which is expected to be useful for Si solar cell applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.412-412
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• 2009

Carbon-based nano materials have a significant effect on various fields such as physics, chemistry and material science. Therefore carbon nano materials have been investigated by many scientists and engineers. Especially, since graphene, 2-dimemsonal carbon nanostructure, was experimentally discovered graphene has been tremendously attracted by both theoretical and experimental groups due to their extraordinary electrical, chemical and mechanical properties. Electrical conductivity of graphene is about ten times to that of silicon-based material and independent of temperature. At the same time silicon-based semiconductors encountered to limitation in size reduction, graphene is a strong candidate substituting for silicon-based semiconductor. But there are many limitations on fabricating large-scale graphene sheets (GS) without any defect and controlling chirality of edges. Many scientists applied micromechanical cleavage method from graphite and a SiC decomposition method to the fabrication of GS. However these methods are on the basic stage and have many drawbacks. Thereupon, our group fabricated GS through Thermo-electrical Pulse Induced Evaporation (TPIE) motivated by arc-discharge and field ion microscopy. This method is based on interaction of electrical pulse evaporation and thermal evaporation and is useful to produce not only graphene but also various carbon-based nanostructures with feeble pulse and at low temperature. On fabricating GS procedure, we could recognize distinguishable conditions (electrical pulse, temperature, etc.) to form a variety of carbon nanostructures. In this presentation, we will show the structural properties of OS by synthesized TPIE. Transmission Electron Microscopy (TEM) and Optical Microscopy (OM) observations were performed to view structural characteristics such as crystallinity. Moreover, we confirmed number of layers of GS by Atomic Force Microscopy (AFM) and Raman spectroscopy. Also, we used a probe station, in order to measure the electrical properties such as sheet resistance, resistivity, mobility of OS. We believe our method (TPIE) is a powerful bottom-up approach to synthesize and modify carbon-based nanostructures.