• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.397-400
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• 1997

This paper presentes the characteristics of Si anisotropic etching and electrochemical etch-stop in aqueous TMAH/IPA/pyrazine solution. (100) Si etching rate of 0.747 $\mu\textrm{m}$/min which faster 86% than TMAH 25 wt.%/IPA 17 vol.% solution was obtained using best etching condition at TMAH 25 wt.%/IPA 17 vol.%/pyrazine 0.1 g and the etching rate of (100) Si was decreased with more additive quantity of pyrazine. I-V curve of p-type Si in TMAH/IPA/pyrazine was obtained. OCP(Open Circuit Potential) and PP(Passivation Potential) were -2 V and -0.9 V, respectively. Si diaphragms were obtained by electrochemical etch-stop in aqueous TMAH/IPA/pyrazine solution.

• Journal of Sensor Science and Technology
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• v.17 no.6
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• pp.425-428
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• 2008

This paper describes the resonant characteristics of polycrystalline SiC micro resonators. The $1{\mu}m$ thick polycrystalline 3C-SiC cantilevers with different lengths were fabricated using a surface micromachining technique. Polycrystalline 3C-SiC micro resonators were actuated by piezoelectric element and their fundamental resonance was measured by a laser vibrometer in vacuum at room temperature. For the $100{\sim}40{\mu}m$ long cantilevers, the fundamental frequency appeared at $147.2kHz{\sim}856.3kHz$. The $100{\mu}m$ and $80{\mu}m$ long cantilevers have second mode resonant frequency at 857.5.kHz and 1.14.MHz, respectively. Therefore, polycrystalline 3C-SiC resonators are suitable for RF MEMS devices and bio/chemical sensor applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.352-353
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• 2006

가스센서용 마이크로 히터 제작에는 표연 마이크로 머시닝 또는 벌크 마이크로머시닝 기술을 이용한다. 표면 마이크로 머시닝에 의한 마이크로 히터 (MHP) 구조의 경우, 기판과 박막간의 폭이 좁기 때문에 에칭 공정 후 세정이 잘 이루어지지 않으면 열적 절연이 잘 이루어지지 않아서 히터와 센서의 성능을 저하시키는 원인이 된다. 본 연구에서는 표면 마이크로 머시닝 기술에 의한 가스 센서용 마이크로 히터를 제작한다. $SiO_2$와 $Si_3N_4$를 성분으로 하며, $100{\mu}m\;{\times}\;100{\mu}m$의 면적과 350 nm 의 두께를 갖는 가스 센서용 마이크로 히터를 제작하였다. 이를 위하여 ANSYS를 통한 유한요소해석에 의한 열분포 해석으로 최적구조를 확인하였다. 센서로의 열 전달 효율을 높이기 위해 센서 박막은 히터 위에 적층하였다. 실리콘 표면과 마이크로 히터와의 간격은 에칭 공정을 통하여 $2{\mu}m$로 하였으며, 이 공간에서는 에칭 및 세정 후에 이물질이 깨끗이 세정되지 않고 남아 있거나, 습식 공정 중에 수분의 장력에 의한 열전연성이 나빠질 수 있는 등 단점이 있다. 이는 건식 등방성 에칭 공정을 통하여 해결하였다.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.9
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• pp.662-664
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• 1999

We fabricated AC-TFEL device having cone-shaped Si micro-tip reflector array based on the process which have been conventionally employed for the Si-tip field emitter array in FED system. As a result, the AC-TFEL device having a new geometrical structure could generate well concentrated visible white-light from 3600 reflectors/pixel under bipolar pulse excitation mode only by edge-emission mechanism.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.396-401
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• 1999

In this study, $Ar^+$ ion laser etching process of single/poly-crystalline Si with $CCl_2F_2$ gas is investigated for MEMS applications. In general, laser direct etching process is useful in microelectronic process, fabrication of micro sensors and actuators, rapid prototyping, and complementary processing because of the advantages of 3D micromachining, local etching/deposition process, and maskless process with high resolution. In this study, a pyrolytic method, in which $CCl_2F_2$ gasetches molten Si by the focused laser, was used. In order to analyze the temperature profile of Si by the focused laser, the 3D heat conduction equation was analytically solved. In order to investigate the process parameters dependence of etching characteristics, laser power, $CCl_2F_2$ gas pressure, and scanning speed were varied and the experimental results were observed by SEM. The aspect ratio was measured in multiple scanning and the simple 3D structure was fabricated. In addition, the etching characteristics of $6\mum$ thick poly-crystalline Si on the insulator was investigated to obtain flat bottom and vertical side wall for MEMS applications.

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.4
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• pp.149-154
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• 2004

This paper presents a silicon probe tip for vertical probe card application. The silicon probe tip was fabricated using MEMS technology such as porous silicon micromachining and deep- RIE (reactive ion etching). The thickness of the silicon epitaxial layers was 5 ${\mu}{\textrm}{m}$ and 7 ${\mu}{\textrm}{m}$, respectively. The width and length were 40 ${\mu}{\textrm}{m}$ and 600 ${\mu}{\textrm}{m}$, respectively. The probe structure was a multilayered structure and was composed of Au/Ni-Cr/Si$_3$N$_4$/n-epi layers. The height of the curled probe tip was measured as a function of the annealing temperature and time. Resistance characteristics of the probe tip were measured using a touchdown test.

• Journal of the Optical Society of Korea
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• v.7 no.3
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• pp.166-173
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• 2003

This paper presents micromachining results on planar-lightwave-circuit (PLC) chips with Si substrate and the quartz substrate by using Ti:Sapphire femtosecond-pulsed laser. The ablation process with femtosecond laser pulses generates nothing of contamination, molten zone, microcracks, shock wave, delamination and recast layer. We also showed that the micromachine for PLC using femtosecond pulsed lasers is superior to that using nanosecond pulsed lasers. The insertion loss and the optical return loss of the 1 ${\times}$ 8 optical power splitters packaged with micromachined input- and output-port U-grooves were less than 11.0 ㏈ and more than 55 ㏈, respectively. The wavelength dependent loss (WDL) was distributed within $\pm$0.6 ㏈ and the polarization dependent loss (PDL) was less than 0.2 ㏈.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.45-46
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• 2005

The piezoelectric ZnO thin films were deposited onto Al/Si substrate in order to figure out the crystalline and the residual stress of deposited films. As the $Ar/O_2$ gas ratio is increased, c-axis orientation of deposited films is significantly enhanced and also the residual stresses of ZnO films are all compressive. They are decreased from -1.2 GPa to -950 MPa as the $Ar/O_2$ gas ratio is increased. A diaphragm-based piezoelectric microspeaker fabricated on ONO films shows about 14 mPa output pressure at 1 kHz with $8V_{peak-to-peak}$.

• Journal of Sensor Science and Technology
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• v.19 no.1
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• pp.31-35
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• 2010

High temperature micro pressure sensors were fabricated by using polycrystalline 3C-SiC piezoresistors grown on oxidized SOI substrates by APCVD. These have been made by bulk micromachining under $1{\times}1mm^2$ diaphragm and Si membrane thickness of $20{\mu}m$. The pressure sensitivity of implemented pressure sensors was 0.1 mV/$V{\cdot}bar$. The nonlinearity and the hysteresis of sensors were ${\pm}0.44%{\cdot}FS$ and $0.61%{\cdot}FS$. In the temperature range of $25^{\circ}C{\sim}400^{\circ}C$ with 5 bar FS, TCS (temperature coefficient of sensitivity), TCR (temperature coefficient of resistance), and TCGF (temperature coefficient of gauge factor) of the sensor were -1867 ppm/$^{\circ}C$, -792 ppm/$^{\circ}C$, and -1042 ppm/$^{\circ}C$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.387-388
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• 2008

High temperature micro pressure sensors were fabricated by polycrystalline (poly) 3C-SiC piezoresistors formed by oxidized SOI substrates with APCVD. These have been designed by bulk micromachining below $1{\times}1mm^2$ diaphragm and Si membrane $20{\mu}m$ thick. The pressure sensitivity of fabricated pressure sensor was 0.1 mV/Vbar. The non-linearity of sensor was ${\pm}0.44%$ FS and the hysteresis was 0.61% FS.TCS of pressure sensor was -1867 ppm/$^{\circ}C$, its TCR was -792 ppm/$^{\circ}C$, and TCGF to 5 bar was -1042 ppm/$^{\circ}C$ from 25 to $400^{\circ}C$.