• Proceedings of the Membrane Society of Korea Conference
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• 2008.05a
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• pp.151-153
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• 2008

• Proceedings of the Membrane Society of Korea Conference
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• 1997.10a
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• pp.129-130
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• 1997

1. 서론 : 반도체 제조공정중 wafer가공 공정에 사용되는 많은 양의 RO 초순수는 미세한 규소입자를 비롯하여 비교적 낮은 농도의 불순물을 포함하고 있으나, 현재 1차세정후 공정폐수로 전량 희석되어 폐기되고 있다. 반도체 제조공정에서 발생되는 이러한 세정폐수를 적절한 전처리와 분리막 처리를 통하여 유가물질인 Si 입자를 회수하고, 처리수를 재이용함으로써 환경오염의 감소 및 공업용수의 증대를 도모할 수 있다. 본 연구에서는 고분자 분리막을 이용하여 반도체 제조공정중 발생한 세정중의 유가물질인 Si를 회수하고, 용수를 재이용하기 위하여 한외여과용 평막을 제조하여 Si 함유 폐수에 대한 막성능을 평가하였으며, 또한 상용 tubular 및 hallow fiber막의 성능과도 비교하였다.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.1
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• pp.39-43
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• 2001

$SiC_{x}N$_{y}$ film is deposited by electron cyclotron resonance plasma chemical vapor deposition system using $SiH_4$(5% in Ar), $CH_4$ and $N_2$. Ternary phase $SiC_{x}N$_{y}$ thin film deposited at the microwave power of 600 W and substrate temperature of 700 contains considerable amount of strong C-N bonds. Change in $CH_4$flow rate can effectively control the residual film stress, and typical surface roughness of 34.6 (rms) was obtained. Extreme]y high hardness (3952 Hv) and optical transmittance (95% at 633 nm) was achieved, which is suitable for a LIGA mask membrane application.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.86.1-86.1
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• 2012

나노재료와 나노기술의 연구개발 지원을 위하여 국가나노인프라인 나노종합팹센터에서 개발되고 있는 나노재료/나노현상의 실시간 관찰을 위한 SiN membrane chip 기술 및 나노그래핀 기반구축에 대한 최근 결과와 향후계획을 소개하고자 한다. 나노재료의 합성, 배열, 구조 등의 실시간 관찰을 가능하게 하기 위하여 제작된SiN membrane chip은 투과전자현미경(transmission electron microscope, TEM)에서 투명한 기판으로, 그 위에 나노재료를 합성, 배열하고 원하는 모양의 전극을 형성하여 나노재료 및 나노소자의 온도변화 및 전기적 특성 측정 등이 가능하다. 이러한 기술은 Ag, Sn, Cu 등 nano-cluster의 percolation 소자, SiN 및 Graphene 나노기공 소자, SiGe, BiTe, Si, ZnO 나노선 및 CNT의 내부구조변화, 상변화 등 다양한 나노재료/나노소자의 나노현상 관찰 및 해석에 적용되었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.7
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• pp.612-616
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• 2000

This paper describes on the fabrication and characteristics of hot-film type micro-flowsensors integrated with Pt-RTD(resistance thermometer device) and micro-heater on the Si membrane in which MgO thin-film was used as medium layer in order to improve adhesion of Pt thin-film to SiO$_2$layer. The MgO layer improved adhesion of Pt thin-film to SiO$_2$layer without any chemical reactions to Pt thin-film under high annealing temperatures. Output voltages increased due to increase of heat-loss from sensor to external. The output voltage was 82 mV at $N_2$flow rate of 2000 sccm/min heating power of 1.2 W. The response time($\tau$:63%) was about 50 msec when input flow was stepinput

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.252-252
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• 2008

The microhotplates consisting of a Pt-ased heating element on AlN/poly 3C-SiC layers were fabricated. The microhotplate has a $600{\mu}m{\times}600{\mu}m$ square shaped membrane which made of $1{\mu}m$ thick ploycrystalline 3C-SiC suspended by four legs. 3C-SiC is known for excellent chemical durability, mechanical strength and sustaining of high temperature. The membrane is fabricated by surface micromachining using oxidized Si sacrificial layer. The Pt thin film is used for heating material and resist temperature sensor. The fabrication methodology allows intergration of an array of heating material and resist temperature detector. For reasons of a short response time and a high sensitivity a uniform temperature profile is desired. The dissipation of microhotplate was examined by a IR thermoviewer and the power consumption was measured. Measured and simulated results are compared and analyzed. Thermal characterization of the microhotplates shows that significant reduction in power consumption was achieved using suspended structure.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2013.05a
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• pp.625-626
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• 2013

• Journal of Sensor Science and Technology
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• v.12 no.3
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• pp.103-111
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• 2003

A chromel-alumel thermoelectric flow sensor using $Si_3N_4/SiO_2/Si_3N_4$ thermal isolation membrane was fabricated. Temperature coefficient of resistance of thin film Pt-heater was about $0.00397/^{\circ}C$, and Seebeck coefficient of chromel-alumel thermocouple was about $36\;{\mu}V/K$. The sensor showed that thermoelectric voltage decreased as thermal conductivity of gas increased, and $N_2$-flow sensitivity increased as heater voltage increased or the distance between heater and thermocouple decreased. When heater voltage was about 2.5 V, $N_2$-flow sensitivity and thermal response time of the sensor were about $1.5\;mV/sccm^{1/2}$ and 0.18 sec., respectively. Linear range in flow sensitivity of the flow sensor was wider than that of Bi-Sb flow sensor.

• Membrane Journal
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• v.16 no.1
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• pp.9-15
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• 2006

PVA/SSA/HPA composite membranes were prepared by the addition of SSA as a crosslinking agent and HPA such as PWA or SiWA. The water uptake decreased and the IEC increased as the HPA contents increased in PVA/SSA/HPA composite membranes. XRD results showed that HPA distributed well into the composite membranes as the HPA concentration increased, and SiWA dispersed better than PWA in the composite membranes. TGA results showed that PVA/SSA composite membranes were more heat-resistant than PVA due to the crosslinking of PVA, and the heat stability of the composite membranes improved much more as the concentration of HPA increased. The methanol barrier property of PVA/SSA/HPA composite membranes was superior to Nafion, and the methanol permeability of the composite membranes decreased as the concentration of HPA increased.

• Membrane Journal
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• v.28 no.1
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• pp.37-44
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• 2018

Polysulfone composites including graphene were prepared, and their thermal characteristics in membrane states were analyzed by using a custome-made residual stress analyzer and a thermal diffusivity analyzer based on laser flash method. The residual stress analysis was carried out on the polysulfone composite films deposited on Si (100) substrates for 1 cycle of heating and cooling runs. The flat membrane of graphene-embedded polysulfone composites were prepared by the phase transfer method in distilled water and the thermal conductivity was separately measured in the out-of-plane and the in-plane directions. The residual stress of the graphene-embedded polysulfone film was gradually decreased with increasing graphene loading and the out-of-plane thermal conductivity was distinguished from the in-plane thermal conductivity in the flat membranes. These thermal characteristics are caused by the structural uniqueness of graphene and the micro-void structures formed during membrane fabrication.