• Journal of Korea Foundry Society
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• v.11 no.4
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• pp.314-322
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• 1991

In this study, Na, Li, Sb, Sr were added as the modifiers to improve the mechanical proper ties of Al-Si alloys and their effects were compared one another Thermal analysis was carried out to measure the degree of undercooling, that is, the basic mechanism of modifying effect. The measurements of holding time and analyses of components of Al-Si alloys were carried out to compare the fading of the modifiers. Greater degree of undercooling was measured from the modified alloy than the normal alloys. In the modified alloy, the shape of Si was changed into a fine fiber phase or a lamellar phase from the coarse plate phase. There are not modifying effect of Sb below the $1.5^{\circ}C$ /sec of cooling rate. As the cooling rate increases, similar effects appears in the non-modified alloys like the modified alloys. Na and Li were faded in short time and were difficult to control on the melt, but Sb and Sr were scarcely faded for 6 hours of holding and were easy to control on the melt. Na and Sr are the good modifiers in terms of microstructure. Sb is the best modifier, but Na, Li are the inadequate modifiers in terms of fading.

• Journal of the Korean Ceramic Society
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• v.42 no.8 s.279
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• pp.593-598
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• 2005

Polycarbosilane was synthesized by the Kumada rearrangement of polydimethylsilane in the presence of zeolite (ZSM-5) as a catalyst at $350^{\circ}C$. The prepared polycarbosilane had very low molecular weight ($M_w=500$), so that it was not suitable to fabricate SiC fiber by melt spinning. Further polymerization of PCS was conducted around $400^{\circ}C$ to obtain spinnable polycarbosilane. After polymerization, the polycarbosilanes were isolated by distillation according to the molecular weight distributions. The PCS with a controlled molecular weight distribution was spun into continuous polycarbosilane green fibers. The PCS green fiber was successfully transformed into silicon oxycarbide fiber. The room temperature strength of the SiC fiber was around 1.5 - 1.8 GPa. The oxidation behavior and the tensile strength after oxidation were also evaluated.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.2
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• pp.75-78
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• 2009

Si-doped GaAs single crystals were grown by vertical gradient freeze using PBN crucibles. The amount of oxide layer $B_{2}O_{3}$ in PBN crucible was changed($0{\sim}0.2wt%$) and measured the concentration of carriers. The segregation coefficients of Si in GaAs melt decreased rapidly from initial 0.1 to 0.01 as the amount of $B_{2}O_{3}$ increases. At the same time, concentration of carriers was shown to decrease. It is likely that the reaction between dopant Si and $B_{2}O_{3}$ in GaAs melt results in the reduction of Si dopants(donor) while increase in the amount of boron(acceptor). The thin layer of $B_{2}O_{3}$ glass in PBN crucible was proved to be a better way to reduce defect formation rather than the total amount of $B_{2}O_{3}$.

• Journal of Korea Foundry Society
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• v.17 no.2
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• pp.170-179
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• 1997

A noble technique has been developed for fabricating in situ formed $TiC_p/Al$ composites. In this process, fairly stable TiC particles were in situ synthesized in liquid aluminum by the interfacial reaction between an Al-Ti melt and SiC, which is a comparatively unstable carbide from the view-point of thermodynamics. It is possible in the present process to generate TiC particles of nearly 1 ${\mu}m$ in diameter, even utilizing SiC of 14 ${\mu}m$ as raw material. However, the dispersion behavior of TiC particles in the matrix depends on the size of the raw material SiC. Decomposing finer SiC makes the dispersion of TiC particles more uniform and the mechanical properties of composites are improved accordingly. The structure of in situ composites and their mechanical properties are affected by the fabrication temperature and the stirring time. It has been found that the most suitable condition for fabrication should be applied depending on the size of the raw material, even if the same kinds of carbide are used. Furthermore, although Al-Ti-Si system intermetallic compounds are detected in a $TiC_p/Al-Si$ composite which is fabricated by conventional melt-stirrng method, these compounds can not be observed in a $TiC_p/Al-Si$ composite made by this in situ production method. Hence the mechanical properties of the in situ $TiC_p/Al-Si$ composite are superior to those of the conventional $TiC_p/Al-Si$ composites.

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.10a
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• pp.167-167
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• 1997

• Journal of the Korean Ceramic Society
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• v.30 no.1
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• pp.7-16
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• 1993

Effect of sulfate on the reactionof C3S formation in presence of clinker melt and its appearance in clinker were investigated, using (NH4)2SO4 and CaSO4 as sulfate sources. When (NH4)2SO4 and CaSO4 were added, both showed the similar results, 1.0wt% of sulfate could promoted the reaction of C3S formation, however for its content of more than 2.0wt%, the formation of C3S was prevented. Residual limit of sulfate to C3S formation is about 1.4wt%. Appearances of sulfate were C4A3l and CaSO4 in interstitial phase. For the addition of (NH4)2SO4 or CaSO4 of 20wt%~4.0wt%, C3S grains showed the hypertrophic growth. We might consider that, because sulfate reduced the surface tension and viscosity of the clinker melt, C3S crystals were precipitated below 140$0^{\circ}C$, and the crystlas of C3S were coalesced and linked in the same crystallographical direction with increasing temperature becuase of their rapid growth rate.

• Journal of Korea Foundry Society
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• v.11 no.4
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• pp.303-313
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• 1991

The Purification mechanism of high purity aluminum was studied through the variation of stirring speed and coolant flow rate in the stirring method. In the stirring method the degree of purification was changed as the following factors;the variation of diffusion boundary layer thickness the variation of growth rate and the solute concentration of the residual melt. The concentration of Fe and Si was decreased as the stirring speed and the radial distance increased. In a high stirring speed of 2000rpm with unidirectional stirring mode, the uniformity of solutes was obtained. On the other hand, the purification of Si was done by the combinations of stirring method, fractional melting and acid leaching. In the case of Si purification, the centrifugal force developed in the melt acted as the significant purification factor. It was possible to obtain the purified 3N grade Si crystal after the complete elimination of residual aluminum by fractional melting and acid leaching.

• Journal of Korea Foundry Society
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• v.9 no.6
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• pp.474-482
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• 1989

The aim of this research is to investigate the effects of gas bubbles on the formation of spheroidal graphite in cast iron, Fe-Si-8%Mg alloy, mischmetal hydride($MmH_2$) and $CaCO_3$, which discharge various amounts of Mg, $H_2$ and $Co_2$, gases, were added to Fe-3.9% C-2.0%Si melt and the melt was innoculated with 0.3wt% of 75%Fe-Si. The spheroidal graphites and/or compacted vermicular graphites were produced with more than 0.625cc/g of Mg gas or more than 0.3125cc/g of $H_2$ gas while $CO_2$ gas did not contribute to graphite spheroidization. Nodule counts increased with the amount of Fe-Si-Mg added ; but they decreased with the amount of $MmH_2$ added because the number of effective gas bubbles decrease with the increase in Mm residual. The bull's eye structure was revealed with 0.625cc/g, 1.25cc/g of Mg and 0.3125cc/g of $H_2$ ; the ledeburite structure was revealed with more than 0.625cc/g of $H_2$.

• Journal of Korea Foundry Society
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• v.17 no.2
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• pp.180-187
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• 1997

The influence of solidification condition on the segregation of SiC particles in the $Al-xSi/6wt%SiC_p$(x: 6, 10, 14, 18${\cdot}$wt%) composites was investigated in the study. The results are as follows: 1) During the counter-gravity unidirectional solidification of $Al-Si/SiC_p$ composites melt, most of the SiC particles are pushed to the top of the casting. 2) The SiC particles pushing in the $Al-Si/SiC_p$ composite melts are not observed, when the interface velocity of melts increases more than 1.41 ${\mu}m/sec$. 3) The SiC particles are entrapped in the interdendrite regions, when the sizes of SiC particles in the $Al-Si/SiC_p$ composites are large than ${\varphi}22{\mu}m$.

• Journal of the Korean Ceramic Society
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• v.32 no.6
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• pp.643-652
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• 1995

Si-SiC-graphite composites were developed by incorporating solid lubricant graphite into Si-SiC, in the light of improving tribological properties of Si-SiC ceramics. Si-SiC-graphite composites were fabricated by infilterating silicon melt into the mixture of α-SiC, carbon black and graphite powder at 1750℃ under 3 Torr. The particle size of graphite was in the range of 150 to 500㎛, and the loading content of graphite was 0, 20, 25, 30, 35 vol% in the mixture of α-SiC and carbon black. The mechanical and tribological properties of this composites were studied. The density, hardness, flexural strength, compressive strength and Young's modulus were decreased with increasing of graphite content. An additiion of solid-lubricant graphite up to 30 vol% has improved tribological properties of Si-SiC ceramics without considerable degradation of mechanical properties.