• Journal of the Korean Ceramic Society
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• v.52 no.1
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• pp.19-22
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• 2015

The joining behavior of YSZ ceramics to the glasses used in the $9Al_2O_3-24ZrO_2-51SiO_2-16R_2O$ and $9Al_2O_3-24ZrO_2-51SiO_2-7La_2O_3-9R_2O$ (wt%) glass systems was investigated. The glass transition and softening temperatures were determined to be $430^{\circ}C$ and $760^{\circ}C$, respectively. The behavior of the contact angle was inversely proportional to an increase in the temperature. The Zr element in YSZ acted as a nucleation agent and contributed to the bonding behavior at the interface.

• Journal of Welding and Joining
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• v.25 no.3
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• pp.37-44
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• 2007

Mechanical and thermomechanical properties of the bulk metallic glass (BMG) are so unique that the deformation behavior is largely dependent on the temperature and the strain rate. Impacting behavior of NiTiZrSiSn bulk metallic glass powder during kinetic spraying was investigated in this study. Considering the impact behavior of the BMG, the kinetic spraying system was modified and attached the powder preheating system to make the transition from the inhomogeneous deformation to the homogeneous deformation of impacting BMG particle easy BMG splat formation is considered from the viewpoint of the adiabatic shear instability. It is suggested that the impact behavior of bulk metallic glass particle is determined by the competition between fracture and deformation. The bonding of the impacting NiTiZrSiSn bulk amorphous particle was primarily caused by the temperature-dependent deformation and fracture (local liquid formation) behavior.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.1005-1008
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• 2003

We report a new FCOG (flip chip on glass) technique using solder bumps for display packaging applications. The In and Sn solder bumps of 40 ${\mu}m$ pitches were formed on Si and glass substrate. The In and Sn bumps were bonded at 125 at the pressure of 3 mN/bump. The metallurgical bonding was confirmed using cross-sectional SEM. The contact resistance of the solder joint was 65 $m{\Omega}$ which was much lower than that of the joint made using the conventional ACF bonding technique. We demonstrate that the new COG technique using solder bump to bump direct bonding can be applied to advanced LCDs that lead to require higher quality, better resolution, and lower power consumption.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1482-1483
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• 2008

This report describes the design, fabrication and experimental results of an implantable micro pressure regulator. It consists of three silicon substrates, a glass substrate, and a PDMS layer. Silicon and glass substrates are fabricated by using bulk micro machining and sandblasting. The PDMS layer is used as a intermediate layer for Si-Si and Si-glass bonding processes. This micro regulator is a key component of the portable drug delivery systems for low power consumption. The device has some advantages, such as a passive type device, no power consumption, and simple structure.

• Journal of the Korean Ceramic Society
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• v.50 no.3
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• pp.238-243
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• 2013

We investigated the effect of Pb-metal filler added to a hybrid paste(PbO-$Bi_2O_3-B_2O_3$-ZnO glass frit and Pb-powder), for joining flip-chip sat lower temperatures than normal. The glass transition temperature was detected at $250^{\circ}C$ and the softening point occurred at $330^{\circ}C$. As the temperature increased, the specific density decreased due to the volatility of the Pb-metal and boron component in the glass. When the glass was heat-treated at $350^{\circ}C$ for 5 min, XRD results revealed a crystalline $Pb_4Bi_3B_7O_{19}$ phase that had been initiated by the addition of Pb-filler in the hybrid paste. The addition of the Pb-metal filler caused are action between the Pb-metal and glass that accelerated the formation of the liquid phase. The liquid phase that formed, promoted bonding between the flip-chip substrate sat lower temperature.

• Journal of Welding and Joining
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• v.19 no.3
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• pp.305-310
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• 2001

UBM-coated Si-wafer was fluxlessly soldered with glass substrate in $N_2$ atmosphere using plasma cleaning method. The bulk Sn-37wt.%Pb solder was rolled to the sheet of $100\mu\textrm{m}$ thickness in order to bond a solder disk by fluxless 1st reflow process. The oxide layer on the solder surface was analysed by AES(Auger Electron Spectroscopy). Through rolling, the oxide layer on the solder surface became thin, and it was possible to bond a solder disk on the Si-wafer with fluxless process in $N_2$ gas. The Si-wafer with a solder disk was plasma-cleaned in order to remove oxide layer formed during 1st reflow and soldered to glass by 2nd reflow process without flux in $N_2$ atmosphere. The thickness of oxide layer decreased with increasing plasma power and cleaning time. The optimum plasma cleaning condition for soldering was 500W 12min. The joint was sound and the thicknesses of intermetallic compounds were less than $1\mu\textrm{m}$.

• The Korean Journal of Ceramics
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• v.5 no.4
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• pp.336-340
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• 1999

Glasses in the system $CaO-TiO_2-SiO_2-Al_2O_3-ZrO_2-B_2O_3$ were investigated to find the glass seal compositions suitable for use in the planar solid oxide fuel cell (SOFC). Glass-ceramics prepared from the glasses by one-stage heat treatment at $1,000^{\circ}C$ showed various thermal expansion coefficients (i,e., $8.6\times10^{-6^{\circ}}C^{-1}$ to $42.7\times10^{-6^{\circ}}C^{-1}$ in the range 25-$1,000^{\circ}C$) due to the viscoelastic response of glass phase. The average values of contact angles between the zirconia substrate and the glass particles heated at 1,000-$1,200^{\circ}C$ were in the range of $131^{\circ}\pm4^{\circ}$~$137^{\circ}\pm9^{\circ}$, indicating that the glass-ceramic was in partial non-wetting condition with the zirconia substrate. With increasing heat treatment time of glass samples from 0.5 to 24 h at $1,100^{\circ}C$, the DC electrical conductivity of the resultant glass-ceramics decreased from at $800^{\circ}C$. Isothermal hold of the glass sample at $1100^{\circ}C$ for 48h resulted in diffusion of Ca, Si, and Al ions from glass phase into the zirconia substrate through the glass/zirconia bonding interface. Glass phase and diffusion of the moving ion such as $Ca^{2+}$ in glass phase is responsible for the electrical conduction in the glass-ceramics.

• The Korean Journal of Ceramics
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• v.5 no.2
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• pp.178-182
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• 1999

Simple binary $Na_2S-SiO_2$ oxysulfide glasses were prepared by a conventional melt-quench method in order to investigate the role of sulfur in glass structure and the electronic state. By X-ray photoelectron spectroscopy(XPS) measurement, S2p binding energy of the glass was observed at approximately 161eV which was close to that of ionic $S^{2-}$. The coordinating state around silicon atoms were investigated by ${29}^Si$ MAS-NMR measurement. The chemical shift observed from NMR supported that sulfur atom was joined to a silicon atom by substituting for an oxygen atom and was present as a non-bridging sulfide ion in low alkali content. On the other hand, it could be presumed that a portion of sulfur anions existed in an isolated state from the glass-network frame at high alkali content. The state of these sulfurs was also studied by Raman spectroscopy in detail.

• Journal of the Korean Magnetics Society
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• v.11 no.5
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• pp.226-231
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• 2001

The effect of interface reaction between Mn-Zn ferrite single crystal and 61 SiO$_2$-23Pbo-6ZnO-8Na$_2$O-2K$_2$O (mol%) glass on the magnetic properties of the ferrite was investigated. After the reaction, the hump of Zn concentration appeared at the ferrite adjacent to the interface. The initial permeability of the ferrite bonded with the glass at 700 $^{\circ}C$ was 1766 at 100 KHz and reduced to 907 after reaction at 1000$^{\circ}C$. The permeability degradation with increasing reaction temperature was considered to be attributed not only to the sixe diminution of the ferrite due to the its dissolution into the glass but also to the residual stress due to the difference in expansion coefficient between the ferrite and the diffusion layer-the region of the hump of Zn concentration-adjacent to the interface.

• Journal of the Korean Ceramic Society
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• v.23 no.4
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• pp.27-34
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• 1986

In the present study an attempt was made to synthesize $10TiO_2$.$90SiO_2$ glass by Sol-Gel process. Tetra-ethyl-ortho-silane and titanium-iso-propoxide were used as precursors. As the mutual solvent ethanol and iso-propanol were used. TEOS was partially hydrolyzed with one-fold mole of $H_2O$ prior to the reaction with titanium-iso-propoxide to control the difference of hydrolysis rate of the two metal alkoxides. At gelling temperature higher than 6$0^{\circ}C$ it was difficult to obtain monolithic gels. At such a low temperature as 85$0^{\circ}C$ clear amorphous gel derived glass with Si-O-Ti bonding was obtained.