• Journal of the Korean Ceramic Society
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• v.33 no.6
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• pp.653-659
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• 1996

• Journal of the Korean Vacuum Society
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• v.2 no.4
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• pp.507-514
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• 1993

The solid state reaction of Mo/Si multilayer thin films produced by RF magnetron sputtering technique was examine dusing differential scanning calorimetry (DSC) and x-ray diffraction, and explained in view of two concepts, effective drivig force and effective heat of formation. In constant scanning rate DSC, there were two exothermic peks which corresponded to the formation of h-MoSi2 and t-MoSi2 , respectively. The activation energyfor theformation of h-MoSi2 was 1.5eV , and that of t-MoSi2 was 7.8eV. Nucleation wa stherate controlling mechanism for each of the silicide formation. Amorphous phase was not formed , which was consistent withtheprediction by the concept of effective driving force. h-MoSi2 the first crystalline phase, was considered to have lower interfacial free energy than t-MoSi2 and by increasing temperature it was transformed into more stable t-MoSi2.

• ETRI Journal
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• v.25 no.4
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• pp.247-252
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• 2003

This paper presents results from experiments on laser-annealed SiGe-selective epitaxial growth (LA-SiGe-SEG). The SiGe-SEG technology is attractive for devices that require a low band gap and high mobility. However, it is difficult to make such devices because the SiGe and the highly doped region in the SiGe layer limit the thermal budget. This results in leakage and transient enhanced diffusion. To solve these problems, we grew in situ doped SiGe SEG film and annealed it on an XMR5121 high power XeCl excimer laser system. We successfully demonstrated this LA-SiGe-SEG technique with highly doped Ge and an ultra shallow junction on p-type Si (100). Analyzing the doping profiles of phosphorus, Ge compositions, surface morphology, and electric characteristics, we confirmed that the LA-SiGe-SEG technology is suitable for fabricating high-speed, low-power devices.

• Journal of the Ergonomics Society of Korea
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• v.33 no.5
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• pp.395-405
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• 2014

Objective: The aim of this study is to investigate 1) somatotopic arrangement of the second and third fingers in SI area 2) difference of neural activation in the SI area produced by stimulation with different frequencies 3) correlation between the intensity of tactile perception by different stimulus intensity and the level of brain activation measurable by means of fMRI. Background: Somatosensory cortex can obtain the information of environmental stimuli about "where" (e.g., on the left palm), "what" (e.g., a book or a dog), and "how" (e.g., scrub gently or scrub roughly) to organism. However, compared to visual sense, the neural mechanism underlying the processing of specific electrotactile stimulus is still unknown. Method: 10 right-handed subjects participated in this study. Non-painful electrotactile stimuli were delivered to two different finger tips of right hand. Functional brain images were collected from 3.0T MRI using the single-shot EPI method. The scanning parameters were as follows: TR and TE were 3000, 35ms, respectively, flip angle 60, FOV $24{\times}24cm$, matrix size $64{\times}64$, slice thickness 4mm (no gap). SPM5 was used to analyze the fMRI data. Results: Significant activations produced by the stimulation were found in the SI, SII, the subcentral gyrus, the precentral gyrus, and the insula. In all participants, statistically significant activation was observed in the contralateral SI area and the bilateral SII areas by the stimulation on the fingers but ipsilaterally dominant. The SI area representing the second finger generally located in the more lateral and inferior side than that of the third finger across all the subjects. But no difference in brain area was found for the stimulation of the fingers by different frequencies. And two typical patterns were observed on the relationship between the perceived psychological intensity and the amount of voxels in the primary sensory cortex during the stimulation. Conclusion: It was possible to discriminate the representation sites in the SI by electrotactile stimulation of digit2 and digit3. But we could not find the differences of the brain areas according to different stimulation frequencies from 3 to 300Hz. Application: The results of the study can provide a deeper understanding of somatosensory cortex and offer the information for tactile display for blinds.

• Parasites, Hosts and Diseases
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• v.50 no.1
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• pp.1-6
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• 2012

$Toxoplasma$ $gondii$ penetrates all kinds of nucleated eukaryotic cells but modulates host cells differently for its intracellular survival. In a previous study, we found out that serine protease inhibitors B3 and B4 (SERPIN B3/B4 because of their very high homology) were significantly induced in THP-1-derived macrophages infected with $T.$ $gondii$ through activation of STAT6. In this study, to evaluate the effects of the induced SERPIN B3/B4 on the apoptosis of $T.$ $gondii$-infected THP-1 cells, we designed and tested various small interfering (si-) RNAs of SERPIN B3 or B4 in staurosporine-induced apoptosis of THP-1 cells. Anti-apoptotic characteristics of THP-1 cells after infection with $T.$ $gondii$ disappeared when SERPIN B3/B4 were knock-downed with gene specific si-RNAs transfected into THP-1 cells as detected by the cleaved caspase 3, poly-ADP ribose polymerase and DNA fragmentation. This anti-apoptotic effect was confirmed in SERPIN B3/B4 overexpressed HeLa cells. We also investigated whether inhibition of STAT6 affects the function of SERPIN B3/B4, and vice versa. Inhibition of SERPIN B3/B4 did not influence STAT6 expression but SERPIN B3/B4 expression was inhibited by STAT6 si-RNA transfection, which confirmed that SERPIN B3/B4 was induced under the control of STAT6 activation. These results suggest that $T.$ $gondii$ induces SERPIN B3/B4 expression via STAT6 activation to inhibit the apoptosis of infected THP-1 cells for longer survival of the intracellular parasites themselves.

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.05a
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• pp.114-114
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• 1998

• Korean Journal of Materials Research
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• v.10 no.12
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• pp.793-798
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• 2000

The age-hardening behavior of unreinforced 6061 Al alloy and SiCp/6061 Al alloy composites reinforced with different size of SiC particle (average diameter ; 0.7$\mu\textrm{m}$ and 7.0$\mu\textrm{m}$) was investigated by hardness measurement, calorimetric technique and transmission electron microscopy. At 17$0^{\circ}C$ isothermal aging treatment, the peak aging time of 0.7$\mu\textrm{m}$SiCp/6061Al alloy composite and 7.0$\mu\textrm{m}$SiCp/6061Al alloy composite is shorter than that of unreinforced 6061Al alloy, and the aging of 7.0$\mu\textrm{m}$SiCp/6061Al alloy composite is accelerated more than that of 0.7$\mu\textrm{m}$SiCp/6061Al alloy composite. This acceleration is due to the increase of dislocation density by the compositeness with SiCp and the SiC particle size. In the peak aged condition, the major strengthening phase of these materials is intermediate $\beta$ phase(Mg$_2$Si), and the activation energy for the formation of $\beta$ phase is considerably decreased by the compositeness with SiCp and the increasing of SiC Particle site.

• Toxicological Research
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• v.32 no.3
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• pp.225-230
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• 2016

Zingiber officinale Roscoe has been widely used as a folk medicine to treat various diseases, including cancer. This study aims to re-examine the therapeutic potential of co-administration of natural products and cancer chemotherapeutics. Candidate material for this project, ${\alpha}$-zingiberene, was extracted from Zingiber officinale Roscoe, and ${\alpha}$-zingiberene makes up $35.02{\pm}0.30%$ of its total essential oil. ${\alpha}$-Zingiberene showed low $IC_{50}$ values, $60.6{\pm}3.6$, $46.2{\pm}0.6$, $172.0{\pm}6.6$, $80.3{\pm}6.6$ (${\mu}g/mL$) in HeLa, SiHa, MCF-7 and HL-60 cells each. These values are a little bit higher than $IC_{50}$ values of general essential oil in those cells. The treatment of ${\alpha}$-zingiberene produced nucleosomal DNA fragmentation in SiHa cells, and the percentage of sub-diploid cells increased in a concentration-dependent manner in SiHa cells, hallmark features of apoptosis. Mitochondrial cytochrome c activation and an in vitro caspase-3 activity assay demonstrated that the activation of caspases accompanies the apoptotic effect of ${\alpha}$-zingiberene, which mediates cell death. These results suggest that the apoptotic effect of ${\alpha}$-zingiberene on SiHa cells may converge caspase-3 activation through the release of mitochondrial cytochrome c into cytoplasm. It is considered that anti-proliferative effect of ${\alpha}$-zingiberene is a result of apoptotic effects, and ${\alpha}$-zingiberene is worth furthermore study to develop it as cancer chemotherapeutics.

• Journal of the Korea institute for structural maintenance and inspection
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• v.9 no.4
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• pp.261-269
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• 2005

The object of this research is to produce alkali activated fly ash-cement using low calcium fly ash as substitute for portland cement. The experimental program included activation of fly ash by a strong base(NaOH) at different concentration, temperature, and liquid-to-fly ash ratios. To achieve for higher compressive strength of the hardened product, sodium meta silicate is added to the alkaline solution. From the factors considered on strength development, the ratio of liquid/fly ash, the activator concentration and temperature always result to be significative factors. The optimization studied show that the alkaline solution concentration of $NaOH(210g)+Na_2SiO_3{\cdot}9H_2O(30g)+H_2O=1L$ at $50^{\circ}C$ produces the best alkali activation effect for the low calcium fly ash. SEM and XRD patterns showed that the components of alkali-activated fly ash consist mainly of mullite, quartz and amorphous aluminosilicate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.396-399
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• 2003

4H-SiC un diodes with field limiting rings(FLRs) were fabricated and characterized. The dependences of reverse breakdown voltage on the number of FLRs, the distance between p-base main junction and first FLR, and activation temperatures, were investigated. Al and B ions were implanted and activated at high temperature to form p-base region and p+ region in the n-epilayer. We have obtained up to 1782V of reverse breakdown voltage in the un diode with two FLRs on loom thick epilayer. The differential on-resistances of the fabricated diode are $5.3m{\Omega}cm^2$ at $100A/cm^2$ and $2.7m{\Omega}cm^2$ at $1kA/cm^2$, respectively. All pn diodes with FLRs have higher avalanche breakdown voltages than that of diode without an FLR. Regardless of the activation temperature, the un diode with a FLR located 5um apart from main junction has the highest mean breakdown voltage around 1600V among the diodes with one ring. On the other hand, the pn diode with two rings showed different behavior with activation temperature. It reveals that high voltage SiC pn diodes with low on-resistance can be fabricated by using the FLR edge termination.