• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.158-158
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• 2017

Titanium and its alloys have been used in the field dental and orthopedic implants because of their excellent mechanical properties and biocompatibility. Despite these attractive properties, their passive films were somewhat bioinert in nature so that sufficient adhesion of bone cells to implant surface was delayed after surgical treatment. Recently, plasma electrolyte oxidation (PEO) of titanium metal has attracted a great deal of attention is a comparatively convenient and effective technique and good adhesion to substrates and it enhances wear and corrosion resistances and produces thick, hard, and strong oxide coatings. Silicon(Si), Zinc(Zn), and Manganese(Mn) have a beneficial effect on bone. Si in particular has been found to be essential for normal bone and cartilage growth and development. And, Zn has been shown to be responsible for variations in body weight, bone length and bone biomechanical properties. Also, Mn influences regulation of bone remodeling because its low content in body is connected with the rise of the concentration of calcium, phosphates and phosphatase out of cells. The objective of this work was research on bone-like apatite morphology on Si-Zn-Mn-hydroxyapatite coating on Ti-6Al-4V alloy by plasma electrolytic oxidation. Anodized alloys were prepared at 280V voltage in the solution containing Si, Zn, and Mn ions. The surface characteristics of PEO treated Ti-6Al-4V alloy were investigated using XRD, FE-SEM, and EDS.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.80-80
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• 2017

Titanium and its alloys that have a good biocompatibility, corrosion resistance, and mechanical properties such as hardness and wear resistance are widely used in dental and orthopedic implant applications. However, they do not form a chemical bond with bone tissue. Plasma electrolytic oxidation (PEO) that combines the high voltage spark and electro-chemical oxidation is a novel method to form ceramic coatings on light metals such as tita-nium and its alloys. This is an excellent re-producibility and economical, because the size and shape control of the nano-structure is relatively easy. Silicon (Si), manganese (Mn), and magne-sium (Mg) have a useful to bone. Particularly, Si has been found to be essential for normal bone, cartilage growth, and development. Mn influences regulation of bone remodeling be-cause its low content in body is connected with the rise of the concentration of calcium, phosphates and phosphatase out of cells. Pre-studies have shown that Mg plays very im-portant roles in essential for normal growth and metabolism of skeletal tissue in verte-brates and can be detected as minor constitu-ents in teeth and bone. In this study, Electrochemical behavior of plasma electrolytic oxidized films formed in solution containing Mn, Mg and Si ions were researched using various experimental in-struments. A series of Si-Mn-Mg coatings are produced on Ti dental implant using PEO, with the substitution degree, respectively, at 5 and 10%. The potentiodynamic polarization and AC impedance tests for corrosion behav-iors were carried out in 0.9% NaCl solution at similar body temperature using a potentiostat with a scan rate of 1.67mV/s and potential range from -1500mV to + 2000mV. Also, AC impedance was performed at frequencies anging from 10MHz to 100kHz for corrosion resistance.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.154-154
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• 2017

Ti-6Al-4V alloys are widely used as metal-lic biomaterials in dentistry and orthopedics due to its excellent biocompatibility and me-chanical properties. However, because of low biological activity, it is difficult to form bone growth directly on the surface of titanium implants. For this reason, surface treatment of plasma electrolytic oxidation(PEO) was used for dental implants. To enhance bioac-tivity on the surface, strontium(Sr) and sili-con(Si) ions can be added to PEO treated sur-face in the electrolyte containing these ions. The presence of Sr in the coating enhances osteoblast activity and differentiation, where-as it inhibits osteoclast production and prolif-eration. And Si has been found to be essen-tial for normal bone, cartilage growth, and development. In this study, electrochemical characteristics of Ca, P, Sr, and Si ions from PEO-treated Ti-6Al-4V alloy surface was re-searched using various experimental instruments. DC power is used and Ti-6Al-4V al-loy was subjected to a voltage of 280 V for 3 minutes in the electrolyte containing 5, 10, 20M% Sr ion and 5M% Si ion. The morphol-ogies of PEO-treated Ti-6Al-4V alloy by electrochemical anodization were examined by field-emission scanning electron micro-scopes (FE-SEM), energy dispersive x-ray spectroscopy (EDS), x-ray diffraction (XRD) and corrosion analysis using AC impedance and potentiodynamic polarization test in 0.9% NaCl solution at similar body tempera-ture using a potentiostat with a scan rate of 1.67mV/s and potential range from -1500mV to + 2000mV.

• Korean Journal of Materials Research
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• v.23 no.10
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• pp.580-585
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• 2013

To observe the formation of defects at the interface between an oxide semiconductor and $SiO_2$, ZnO was prepared on $SiO_2$ with various oxygen gas flow rates by RF magnetron sputtering deposition. The crystallinity of ZnO depends on the characteristic of the surface of the substrate. The crystallinity of ZnO on a Si wafer increased due to the activation of ionic interactions after an annealing process, whereas that of ZnO on $SiO_2$ changed due to the various types of defects which had formed as a result of the deposition conditions and the annealing process. To observe the chemical shift to understand of defect deformations at the interface between the ZnO and $SiO_2$, the O 1s electron spectra were convoluted into three sub-peaks by a Gaussian fitting. The O 1s electron spectra consisted of three peaks as metal oxygen (at 530.5 eV), $O^{2-}$ ions in an oxygen-deficient region (at 531.66 eV) and OH bonding (at 532.5 eV). In view of the crystallinity from the peak (103) in the XRD pattern, the metal oxygen increased with a decrease in the crystallinity. However, the low FWHM (full width at half maximum) at the (103) plane caused by the high crystallinity depended on the increment of the oxygen vacancies at 531.66 eV due to the generation of $O^{2-}$ ions in the oxygen-deficient region formed by thermal activation energy.

• Journal of the Korean Ceramic Society
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• v.31 no.7
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• pp.753-758
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• 1994

(100) Si and 4$^{\circ}$off (100) Si were oxidized in dry oxygen, and the differences in thermal oxidation behavior and electrical characteristics between two specimens were investigated. Ellipsometer measurements of the oxide thickness produced by oxidation in dry oxygen from 1000 to 120$0^{\circ}C$ showed that the oxidation rates of the 5$^{\circ}$ off (100) Si were more rapid than those of the (100) Si and the differences between them decreased as the oxidation temperature increased. The activation energies based on the parabolic rate constant, B for (100) and 4$^{\circ}$off (100) Si were 25.8, 28.6 kcal/mol and those on the linear rate constant, B/A were 56.8, 54.9 kcal/mol, respectively. Variation of C-V characteristics with the oxidation temperature showed that the flat band voltages were shifted positively and surface state charge densities decreased as the oxidation temperature increased, and the surface state charge density of the 4$^{\circ}$off (100) Si was lower than that of the (100) Si. Also considerable decrease in the density of oxidation induced stacking faults (OSF) for the 4$^{\circ}$off (100) Si was observed through optical microscopy after preferentially etching off the oxide layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.830-833
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• 2003

This paper describes the fabrication and characteristics of 3C-SiCOI sotctures by SDB and etch-back technology for high-temperature MEMS applications. In this work, insulator layers were formed on a heteroepitaxial 3C-SiC film grown on a Si(001) wafer by thermal wet oxidation and PECVD process, successively. The pre-bonding of two polished PECVD oxide layers made the surface activation in HF and bonded under applied pressure. The wafer bonding characteristics were evaluated by the effect of HF concentration used in the surface treatment on the roughness of the oxide and pre-bonding strength. Hydrophilic character of the oxidized 3C-SiC film surface was investigated by ATR-FTIR. The strength of the bond was measured by tensile strengthmeter. The bonded interface was also analyzed by SEM. The properties of fabricated 3C-SiCOI structures using etch-back technology in TMAH solution were analyzed by XRD and SEM. These results indicate that the 3C-SiCOI structure will offers significant advantages in the high-temperature MEMS applications.

• Korean Journal of Materials Research
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• v.10 no.11
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• pp.738-741
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• 2000

Univorm epitaxial $CoSi_2$layers have been grown in situ on a (100) Si substrate at temperatures near$ 600^{\circ}C$ by reactive chemical vapor deposition of cyclopentadienyl dicarbonyl cobalt, (Co(η(sup)5-C(sub)5H(sub)5) ($CO_2$). The growth kinetics of an epitaxial $CoSi_2$layer on al Si(100) substrate was investigated at temperatures ranging from 575 to $650^{\circ}C$. In initial deposition stage, plate-like discrete $CoSi_2$spikes were nucleated along the <111> directions in (100) Si substrate with a twinned structure. The discrete $CoSi_2$plates with both {111} and (100) planes grew into an epitaxial layer with a flat interface on (100) Si. For epitaxial $CoSi_2$growth on (100) Si, the activation energy of the parabolic growth was found to be 2.82 eV. The growth rate seems to be controlled by the diffusion of Co through the $CoSi_2$layer.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.171-174
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• 2002

When boron ions are doped into the poly-Si films, the hydrogen ions doped with boron ions compensate the defect sites and suppress to produce damage density. These samples can be easily activated by hydrogen doping at high acceleration voltage($V_{acc}$).

• IMMUNE NETWORK
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• v.10 no.5
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• pp.173-180
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• 2010

Background: APRIL, originally known as a cytokine involved in B cell survival, is now known to regulate the inflammatory activation of macrophages. Although the signal initiated from APRIL has been demonstrated, its role in cellular activation is still not clear due to the presence of BAFF, a closely related member of TNF superfamily, which share same receptors (TACI and BCMA) with APRIL. Methods: Through transfection of siRNA, BAFF-deficient THP-1 cells (human macrophage-like cells) were generated and APRIL-mediated inflammatory activities were tested. The expression patterns of APRIL were also tested in vivo. Results: BAFF-deficient THP-1 cells responded to APRIL-stimulating agents such as monoclonal antibody against APRIL and soluble form of TACI or BCMA. Furthermore, co-incubation of the siBAFF-deficient THP-1 cells with a human B cell line (Ramos) resulted in an activation of THP-1 cells which was dependent on interactions between APRIL and TACI/BCMA. Immunohistochemical analysis of human pathologic samples detected the expression of both APRIL and TACI in macrophage-rich areas. Additionally, human macrophage primary culture expressed APRIL on the cell surface. Conclusion: These observations indicate that APRIL, which is expressed on macrophages in pathologic tissues with chronic inflammation, may mediate activation signals through its interaction with its counterparts via cell-to-cell interaction.

• Parasites, Hosts and Diseases
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• v.47 no.2
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• pp.117-124
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• 2009

Toxoplasma gondii provokes rapid and sustained nuclear translocation of the signal transducer and activator of transcription 6 (STAT6) in HeLa cells. We observed activation of STAT6 as early as 2hr after infection with T. gondii by the nuclear translocation of fluorescence expressed from exogenously transfected pDsRed2-STAT6 plasmid and by the detection of phosphotyrosine-STAT6 in Western blot. STAT6 activation occurred only by infection with live tachyzoites but not by co-culture with killed tachyzoites or soluble T. gondii extracts. STAT6 phosphorylation was inhibited by small interfering RNA of STAT6 (siSTAT6). In view of the fact that STAT6 is a central mediator of IL-4 induced gene expression, activation of STAT6 by T. gondii infection resembles that infected host cells has been stimulated by IL-4 treatment. STAT1 was affected to increase the transcription and expression by the treatment of siSTAT6. STAT6 activation was not affected by any excess SOCS's whereas that with IL-4 was inhibited by SOCS-1 and SOCS-3. T. gondii infection induced Eotaxin-3 gene expression which was reduced by $IFN-{\gamma}$. These results demonstrate that T. gondii exploits host STAT6 to take away various harmful reactions by $IFN-{\gamma}$. This shows, for the first time, IL-4-like action by T. gondii infection modulates microbicidal action by $IFN-{\gamma}$ in infected cells.