• E2M - 전기 전자와 첨단 소재
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• 제8권2호
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• pp.129-135
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• 1995

SiO thin films are deposited by evaporator the refractive index of wave length, photon energy and the absorptive rate of these films are measured by spectroscopic ellipsometer. It is derived the absorptive rate and permitivity of SiO thin films from the equations that calculating the refractive index. And the result show good agreement with the calculated values and experimental values. As a result, the wave length of light is increased in the condition that the angle of incidence is fixed on SiO thin film, the basic absorption and the absorption impurities are found in the low wave length (below 450 nm in this study) and the reflective absorption and conductive absorption is increased by the form of exponential function over the low wavelength. The absorptive rate is increased by increased the angle of incidence and thickness of SiO film for the insulating layer. As the thickness of SiO film is increased, the value of complex permitivity is decreasing and as wave length of incidence is increased., the value of dielectric is linearly increasing.

• 한국재료학회지
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• 제14권2호
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• pp.152-156
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• 2004

We have studied the effective optical absorption power of Si solar cell with $SiO_2$-antireflection layer based on a mathematical modelling of AM(air mass)1 spectrum and Si refractive index in the wavelength range(0.4 $\mu\textrm{m}\leq$λ$\leq$$0.97\mu\textrm{m}$). The effective optical absorption power obtained from the theoretical calculation was 450 and 520 W/$\m^2$ for the Si solar cells with $SiO_2$-antireflection layer of 500$\AA$ and 1000$\AA$, respectively. The optimum thickness of $SiO_2$-antireflection layer showing the minimum reflection loss was about 1000$\AA$ in the computer simulation. Two kinds of Si solar cells named EBS(500$\AA$) and EBS(l000$\AA$) were fabricated to evaluate the effect of $SiO_2$-antireflection layer thickness on the optical absorption. The epitaxial base Si cell with $SiO_2$-antireflection layer of 1000$\AA$ [EBS(l000$\AA$)] showed the output power improvement of about 15% upon the EBS(500$\AA$) cell due to larger absorption of effective optical power under illumination of AM1, 1 sun.

• 한국광학회지
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• 제10권4호
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• pp.306-310
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• 1999

Sb가 $\delta$도핑된 Si(110)/SiGe 다중 양자 우물 구조에서 에너지 부준위간 전자 천이에 의한 적외선 흡수 현상을 관찰하였다. Si(110)/SiGe 다중 양자 우물 구조에서는 Si(001)이나 GaAs에서는 불가능한, 수직 입사광에 의한 전자 천이가 가능하다. SiGe 층의 Ge 구성비가 증가하면 적외선 흡수 강도는 감소하고 천이 에너지 증가하는 현상을 보여 Ge 구성비가 흡수 스펙트럼에 큰 영향을 미침을 확인하고 그 원인을 분석하였다. 또한 수직 입사광과 수평 입사광은 서로 다른 과정을 통해 흡수되는데 편광각과 입사각을 변화시킨 실험값과 계산값의 비교를 통해 이를 확인할 수 있었다.

• 한국진공학회지
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• 제7권s1호
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• pp.25-29
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• 1998

$SiO_2$ thin films embedded with Ge microcrystallites (Ge-$SiO_2$) were prepared by use of r.f. co-sputtering technique from a Ge, $SiO_2$ composite target. The size of Ge crystallites can been modulated by the experiment parameters. The optical absorption and non-linear optical properties of Ge-$SiO_2$ films were measured. The blue shift of the optical absorption edge, the saturated absorption and two-photon absorption under the condition of resonant absorption have been observed, and are discussed according to the quantum confinement effect.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.322.1-322.1
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• 2014

Many research groups have studied tandem or multi-junction cells to overcome this low efficiency and degradation. In multi-junction cells, band-gap engineering of each absorb layer is needed to absorb the light at various wavelengths efficiently. Various absorption layers can be formed using multi-junctions, such as hydrogenated amorphous silicon carbide (a-SiC:H), amorphous silicon germanium (a-SiGe:H) and microcrystalline silicon (${\mu}c$-Si:H), etc. Among them, ${\mu}c$-Si:H is the bottom absorber material because it has a low band-gap and does not exhibit light-induced degradation like amorphous silicon. Nevertheless, ${\mu}c$-Si:H requires a much thicker material (>2 mm) to absorb sufficient light due to its smaller light absorption coefficient, highlighting the need for a high growth rate for productivity. ${\mu}c$-SiGe:H has a much higher absorption coefficient than ${\mu}c$-Si:H at the low energy wavelength, meaning that the thickness of the absorption layer can be decreased to less than half that of ${\mu}c$-Si:H. ${\mu}c$-SiGe:H films were prepared using 40 MHz very high frequency PECVD method at 1 Torr. SiH4 and GeH4 were used as a reactive gas and H2 was used as a dilution gas. In this study, the ${\mu}c$-SiGe:H layer for triple solar cells applications was performed to optimize the film properties.

• Journal of Electrical Engineering and information Science
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• 제3권1호
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• pp.80-85
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• 1998

A theoretical calculation and an optical measurement method of normal-incidence absorption are proposed. By using a waveguide structure, optical interference and the problem of low level signal can be avoided in the measurement of normal-incidence absorption. The oscillator strength of intersubband absorption for a waveguide structure is calculated in Si(001), Si(110), and Ge(001) quantum wells. The polarization angle dependence of the measured and the calculated absorption strength can be obtained with the same waveguide structure, and be compared after normalization. The normal-incidence absorption in Si(110) and Ge(001) quantum wells is shown theoretically, and can be observed in the optical measurement using waveguide structures at the polarization angle of 90$^{\circ}$.

• 한국재료학회지
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• 제13권10호
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• pp.697-702
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• 2003

FT-IR and thermograph were used to investigate the infrared radiation characteristics of $SiO_2$film made by the sol-gel method. FT-IR spectrum of the $SiO_2$film showed high infrared absorption by Si-O-Si vibration at 1220, 1080, 800 and cm$460^{-1}$ The infrared absorption and radiation wavelength ranges of the $SiO_2$film measured by the integration method coincided with the reflection method, and the infrared emissivity was 0.65, equally. Depending on the bonding of elements, the infrared emissivity was high in the wavelength range where the infrared absorption rate was high, that follows the Kirchhoff's law. The emissivity showed the highest value in the wavelength range between $8∼10\mu\textrm{m}$. $SiO_2$film was considered as an efficient materials for infrared radiator at temperature below 10$0^{\circ}C$. The heat radiation temperature was $117^{\circ}C$ for the aluminum plate, but $146^{\circ}C$ for the $SiO_2$film after 7 minutes heat absorption, consiquently, $29^{\circ}C$ higher than the former.

• 한국표면공학회지
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• 제36권5호
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• pp.406-412
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• 2003

FT-IR and thermography were used to investigate the infrared radiation characteristic of SiO$_2$ film and SiO$_2$/Fe$_2$O$_3$film coated on aluminum. Through FT-TR spectrum, SiO$_2$film showed high infrared absorption in accordance with the stretching vibration of Si-O-Si, and as$ Fe_2$$O_3$was mixed additional absorption band appeared resulting from the stretching vibration of Fe-O at $590cm^{-1}$ and the bond of Si-O-Fe at $900 cm^{-1}$ The two kinds of film measured by the integration method and the reflective method coincided with each other in the wavelength area of infrared absorption and radiation, and corresponded well with Kirchhoff's law as the infrared emissivity is high in wavelength where infrared absorption rate is high. The emissivity of $SiO_2$ film was 0.65 and that of $SiO_2$/Fe$_2$$O_3$film was 0.77, so the addition of$ Fe_2$$O_3$ raised the infrared emissivity by approximately 13%.$ SiO_2$$Fe_2$$O_3$ film is efficient as an infrared radiator at below $100^{\circ}C$. The temperature of heat radiation after 7 minutes was 117$^{\circ}C$ in aluminum plate and $155^{\circ}C$ in $SiO_2$$Fe_2$$O_3$ film, $38^{\circ}C$ higher than the former.

• 한국표면공학회지
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• 제32권3호
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• pp.297-302
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• 1999

In situ measurement of infrared absorption spectra has been performed during low-temperature plasma-enhanced chemical vapor depositiion of silicon-oxide films using tetramethoxysilane as a silicon source. Several absorption bands due to the reactant molecules are clearly observed before deposition. In the plasma, these bands completely disappear at any oxygen mixing ratio. This result shows that most of the tetramethoxysilane molecules are dissociated in the rf plasma, even C-H bonds. Existence of Si-H bonds in vapor phase and/or on the film surface during deposition has been found by infrared diagnostics. We observed both a decrease in Si-OH absorption and an increase in Si-O-Si after plasma off, which means the dehydration condensation reaction continues after deposition. The rate of this reaction is much slower than the deposition ratio of the films.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.383-383
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• 2010

Gas-phase hydrogen atoms create a variety of chemical and physical phenomena on Si surfaces: adsorption, abstraction of pre-adsorbed H, Si etching, Si amorphization, and penetration into the bulk lattice. Thermal desorption/evolution analyses exhibited three distinct peaks, including one from the crystalline bulk. It was previously found that thermal-energy gaseous H(g) atoms penetrate into the Si(100) crystalline bulk within a narrow substrate temperature window(centered at ~460K) and remain trapped in the bulk lattice before evolving out at a temperature as high as ~900K. Developing and sustaining atomic-scale surface roughness, by H-induced silicon etching, is a prerequisite for H absorption and determines the $T_s$ windows. Issues on the H(g) absorption to be further clarified are: (1) the role of the detailed atomic surface structure, together with other experimental conditions, (2) the particular physical lattice sites occupied by, and (3) the chemical nature of, absorbed H(g) atoms. This work has investigated and compared the thermal H(g) atom absorptivity of Si(100), Si(111) and Si(110) samples in detail by using the temperature programmed desorption mass spectrometry (TPD-MS). Due to the differences in the atomic structures of, and in the facility of creating atom-scale etch pits on, Si(100), (100) and (110) surfaces, the H-absorption efficiency was found to be larger in the order of Si(100) > Si(111) > Si(110) with a relative ratio of 1 : 0.22 : 0.045. This intriguing result was interpreted in terms of the atomic-scale surface roughening and kinetic competition among H(g) adsorption, H(a)-by-H(g) abstraction, $SiH_3(a)$-by-H(g) etching, and H(g) penetraion into the crystalline silicon bulk.