• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.353-356
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• 2004

This paper discribes the analysis of the I-V characteristics of 4H-SiC DiMOSFET with single epi-layer Silicon Carbide has been around for over a century. However, only in the past two to three decades has its semiconducting properties been sufficently studied and applied, especially for high-power and high frequency devices. We present a numerical simulation-based optimization of DiMOSFET using the general-purpose device simulator MINIMIS-NT. For simulation, a loin thick drift layer with doping concentration of $5{\times}10^{15}/cm^3$ was chosen for 1000V blocking voltage design. The simulation results were used to calculate Baliga's figure of Merit (BFOM) as the criterion structure optimization and comparison.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제20권5호
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• pp.399-402
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• 2007

The effects of heat treatment on the electrical properties of strained-Si/SiGe-on-insulator (SGOI) devices were examined. We proposed the optimized heat treatment processes for improving the back interfacial electrical properties in SGOI-MOSFET. By applying the additional pre-RTA (rapid thermal annealing) before gate oxidation step and the post-RTA after source/drain dopant activation step, the electrical properties of strained-Si channel on $Si_{1-x}Ge_x$ layer were greatly improved, which resulting the improvement of the driving current, transconductance, and leakage current of SGOI-MOSFET.

• Journal of IKEEE
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• 제22권4호
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• pp.1234-1237
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• 2018

For 4H-SiC trench MOSFET which can reduce on-resistance and switching losses compared to 4H-SiC planar MOSFET, the optimization study for decrease of sub-trench was carried out. In order to decrease sub-trench, Ar reshape process was used and trench shapes were observed as a function of temperature and process time. As a result, it was confirmed that the process conditions for $1500^{\circ}C$ and 20 min were most effective for the suitable trench profiles. In addition, dry/wet oxidation was performed at the Ar reshaped-samples to observe the oxidation thickness with different crystal orientations.

• Journal of the Korean Institute of Telematics and Electronics A
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• 제30A권11호
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• pp.122-131
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• 1993

In this paper, we have developed a submicron Si MOSFET simulator, which is physically based on the hydrodynamic energy transport mode. The simulator was used to investigate the nonstationary transport effects and the transient phenomena in submicron Si MOSFET's. It is found that the velocity overshoot and the carrier heating are dominant transport mechanism near the drain end of the channel and the transient phenomena is more retained in a long channel MOSFET.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제36권4호
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• pp.385-390
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• 2023

In this paper, the 1,700 V level SiC-based power MOSFET device widely used in electric vehicles and new energy industries was designed, that is, a single trench gate power MOSFET structure and a double trench gate power MOSFET structure were proposed to analyze electrical characteristics while changing the design and process parameters. As a result of comparing and analyzing the two structures, it can be seen that the double trench gate structure shows quite excellent characteristics according to the concentration of the drift layer, and the breakdown voltage characteristics according to the depth of the drift layer also show excellent characteristics of 200 V or more. Among them, the trench gate power MOSFET device can be applied not only to the 1,700 V class but also to a voltage range above it, and it is believed that it can replace all Si devices currently applied to electric vehicles and new energy industries.

• Journal of the Institute of Electronics Engineers of Korea SD
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• 제45권10호
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• pp.15-22
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• 2008

The bulk-planer MOSFET has a scaling limitation due to the short channel effect (SCE). The Double-Gate MOSFET (DG-MOSFET) is a next generation device for nanoscale with excellent control of SCE. The quantum effect in lateral direction is important for subthreshold characteristics when the effective channel length of DG-MOSFET is less than 10nm, Also, ballistic transport is setting important. This study shows modeling and design issues of nanoscale DG-MOSFET considering the 2D quantum effect and ballistic transport. We have optimized device characteristics of DG-MOSFET using a proper value of $t_{si}$ underlap and lateral doping gradient.

• Proceedings of the KIPE Conference
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• 전력전자학회 2014년도 추계학술대회 논문집
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• pp.85-86
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• 2014

The paper presents a power supply of atmospheric-pressure plasma reactor based on SiC (Silicon Carbide) MOSFET resonant inverter. Thanks to the capacitive characteristic of capacitive coupling plasma reactor type, the LC series resonant inverter had been applied to take advantages of this topology with the implementation of SiC MOSFET power modules as switching power devices. Designation of gate driver for SiC MOSFET had been introduced by this paper. The 5kVp, 5kW power supply had also been verified by experimental results.

• Proceedings of the KIPE Conference
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• 전력전자학회 2020년도 전력전자학술대회
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• pp.407-408
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• 2020

본 논문은 SiC-MOSFET 기반 전기차용 인버터의 DC-Link 캐패시터 전기용량을 선정하는 방법에 대해 연구하였다. 인버터 시스템에 주로 사용되는 DC-Link 캐패시터는 안정적인 전원 및 고주파 전류 공급 등의 중요한 역할을 한다. 그러나 인버터가 고용량일수록 캐패시터 사이즈가 커지고 무게가 늘어나는 문제가 발생한다. 따라서, 차세대 전력 반도체 소자로 각광 받는 SiC-MOSFET의 높은 동작 주파수의 특성을 활용하여 캐패시터 소형화를 실현시켰다. 또한, PSIM 시뮬레이션을 통해 제안하는 연구의 타당성을 검증하고 Si-IGBT 인버터와 비교하여 그 효과를 입증하였다.

• Proceedings of the KIPE Conference
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• 전력전자학회 2018년도 전력전자학술대회
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• pp.519-521
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• 2018

For most of application, total system cost is first priority to Engineer. Approach for making system cost down can be to reduce cooling cost by selecting low loss item or reducing filter cost by increasing frequency. SiC Mosfet ($CoolSiC^{TM}$) can approach both of case. This paper shows market-needs and reviews each application with SiC.

• The Transactions of the Korean Institute of Power Electronics
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• 제19권3호
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• pp.283-289
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• 2014

This paper carries out a series of analysis of power system using Gallium Nitride (GaN) FET which has wide band gap (WBG) characteristics comparing to conventional Si MOSFET-used power system. At first, for comparison of each semiconductor device, the switching-transient parameter is quantitatively extracted from released information of GaN FET. And GaN FET model which reflect this dynamic property is configured. By using this model, the performance of GaN FET is analyzed comparing to Si MOSFET. Also, in order to enable a representative assessment on the power system level, Si MOSFET and GaN FET are applied to the most common structure of power system, full-bridge, and each power systems are compared based on various criteria, such as performance, efficiency and power density. The entire process is verified with the aid of mathematical analysis and simulation.