• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.1
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• pp.38-42
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• 2001

Electric and dielectric(Ba,Sr)$TiO_3$[BST] thin films for emtal-Insulator-Semiconductor(MIS) capacitors have been studied. BST thin films wre deposted on p-Si(100) substrates bythe RF magnetron sputtering with tempratue range of 500~$600^{\circ}C$. The dielectric properties of MIS capacitors consisting of Al/BST/$SiO_2$/Si sandwich structure were evaluated ot redcue the leakage current density. The charge state densities of the MIS capacitors were determined by high frequency (1 MHz) C-V measurement. In order to reduce the leakage current in MIS capacitor, high quality $SiO_2$ layer was deposited on bare p-Si substrate. Depending on the oxygen pressure and substrate temperature both positive and negative polarities of effective oxide charge in the MIS capacitors were evaluated. It is considered that the density of electronic states, generated at the BST/$SiO_2$/p-Si interface due to the asymmetric structure within BST/$SiO_2$/Si structure, and the oxygen vacancy content has influence on the behavior of oxide charge.

• Journal of the Korean Ceramic Society
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• v.31 no.12
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• pp.1588-1598
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• 1994

The SiC/MoSi2 composite materials were fabricated by infiltrating the mixture of molybdenum disilicide and metal silicon(MoSi2+Si=100) to a porous compact of silicon carbide and graphite under the vacuum atmosphere of 10-1 torr. The specimen were oxidized in dry air under 1 atm at 130$0^{\circ}C$~150$0^{\circ}C$ for 240 hours. The oxidation behavior was evaluated by the weight gain and loss per unit area of the oxidized samples. Also, SEM and XRD analysis of the oxidized surface of the samples were carried out. With increasing the MoSi2 content and oxidation temperature, the passive oxidation was found. The trend of weight gain of all samples was followed the parabolic rate law with the formation of a protective layer of cristobalite on the surface.

• Korean Journal of Materials Research
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• v.4 no.8
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• pp.877-887
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• 1994

Cu-Ni-Si-P alloys have been studied in order to develop connector material which has a favorable combination of strength, electrical conductivity, elastic limit, thermal softening resistence and bend formability. Three kinds of trial alloys with various nickel and silicon content were melted and cast, hot rolled at about $900^{\circ}C$ and cold rolled. Mechanical properties and electrical conductivities of these alloys annealed at $450^{\circ}C$, $500^{\circ}C$ and $550^{\circ}C$ were investigated. An alloy with the composition of Cu-2.7%Ni-0.53%Si-O.O29%P, which shows a favorable combination of high strength and high electrical conductivity, has been developed. Various characteristics of the alloy 1 connector material were evaluated and compared with phospher bronze(C521OR-H) and brass(C26OOR-EH) connector material.

• Journal of the Korean Ceramic Society
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• v.29 no.7
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• pp.511-516
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• 1992

In this study, SiC powder and Si powder were used as the raw materials. Mixture was prepared with addition of Al2O3 and Fe2O3 at 0.1~0.5wt% respectively. After this step, the mixture was pressed and nitrided for 30 hrs at 140$0^{\circ}C$ under NH3-N2 atmosphere. Mechanical properties of sintered specimens were investigated from measurement of porosity, bulk density and three point bending test. nitration reaction extent was observed at the change of mass before and after reaction, and the microstructure and the change of $\alpha$-Si3N4 and $\beta$-Si3N4 were observed by XRD and SEM. In the current work, the results are as follows 1. When Fe2O3 added, the nitridation increased with the content of Fe2O3, and the bending strength was increased from 0.1 wt% to 0.3 wt%, and decreased to 0.5 wt%. 2. When Al2O3 added, the nitridation and the bending strength increased little by little with the content of Al2O3 3. The bending strength of the specimen added with Fe2O3 were higher than that with Al2O3. Because the specimens contained Fe2O3 had much more the whisker type crystal of Si3N4 contributing to strength than contained Al2O3.

• Korean Journal of Materials Research
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• v.9 no.5
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• pp.503-508
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• 1999

We have investigated the physical and diffusion barrier property of Ti-Si-N film for Cu metallization. The ternary compound was deposited by using reactive rf magnetron sputtering of a TiSi$_2$target in an Ar/$N_2$gas mixture. Resistivities of the films were in range of 358$\mu$$\Omega$-cm, to 307941$\mu$$\Omega$-cm, and tended to increase with increasing the $N_2$/Ar flow rate ratio. The crystallization of the Ti-Si-N compound started to occur at 100$0^{\circ}C$ with the phases of TiN and Si$_3$N$_4$identified by using XRD(X-ray Diffractometer). The degree of the crystallization was influenced by the $N_2$/Ar flow ratio. The diffusion barrier property of Ti-Si-N film for Cu metallization was determined by AES, XRD and etch pit by secco etching, revealing the failure temperature of 90$0^{\circ}C$ in 43~45at% of nitrogen content. In addition, the very thin compound (10nm) with 43~45at% nitrogen content remained stable up to $700^{\circ}C$. Furthermore, thermal treatment in vacuum at $600^{\circ}C$ improved the barrier property of the Ti-Si-N film deposited at the $N_2$(Ar+$N_2$) ratio of 0.05. The addition of Ti interlayer between Ti-Si-N films caused the drastic decrease of the resistivity with slight degradation of diffusion barrier properties of the compound.

• Composites Research
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• v.16 no.3
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• pp.41-48
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• 2003

In this work, the effect of molybdenum disilicide(MoSi$_2$) content on the impact properties of carbon-carbon composites(C/C composites) was investigated in the presence of MoSi$_2$. The content of MoSi$_2$ was varied in 0, 4, 12 and 20 wt% on the basis of resin matrix for anti-oxidation properties of the composites under high temperature. As a result, the composites made with MoSi$_2$ resulted in an increase of interfacial adhesion between fibers and matrix, which could improve the impact properties of the composites. Especially, 12 wt% Mosi$_2$ composites showed the highest impact properties in the present system. This was probably due to the existence of brittle-to-ductile transition(BDT) properties of MoSi$_2$ in the vicinity of 90$0^{\circ}C$, resulting from increasing the interfacial adhesion force among fibers, filler, and matrix in the composites.

• Proceedings of the KWS Conference
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• 2009.11a
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• pp.59-59
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• 2009

The influences of B and Si in the filler metals on microstructure and isothermal solidification during transient liquid-phase (TLP) bonding of a nitrogen-containing duplex stainless steel with MBF-30 (Ni-4.5wt.%Si-3.2wt.%B) and MBF-35 (Ni-7.3wt.%Si-2.2wt.%B), were studied at the temperature range of $1030-1090^{\circ}C$ with various times from 60 s to 3600 s under a vacuum of approximately $10^{-5}$ Torr. In case of the former, BN, $Ni_3B$ and $Ni_3Si$ precipitates were formed in the bonding region. BN and $Ni_3Si$ secondary phases were present in the joint for the latter case. The formation of $Ni_3B$ within the joint centerline is dependent on B content. The morphology of $Ni_3Si$ is dominated by Si concentration. A difference between the times for complete isothermal solidification obtained by the experiments and the conventional TLP bonding diffusion model was observed when using MBF-35. According to the simulated results, the isothermal solidification completion time for MBF-35 case was smaller than that in MBF-30. However, this experimental value obtained using MBF-35 was notably larger than that obtained using MBF-30. Isothermal solidification of liquid MBF-30 is controlled by the first isothermal solidification regime dependent on B diffusion model, whereas that of liquid MBF-35 experiences two isothermal solidification regimes and is mainly controlled by the second isothermal solidification dependent on Si diffusion model. In addition, only if Si content exceeds a critical value, the slower 2nd solidification regime will commence.

• Transactions of Materials Processing
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• v.8 no.3
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• pp.233-233
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• 1999

To investigate the effect of tungsten addition on mechanical properties, we prepared refractory (62χ)Nb-18Si-l00Mo-l0Ti-χW (χ=0, 5, 10 and 15 mol.%) in-situ composites by the conventional arc-casting technique, and then explored the microstructure, hardness and elastic modulus at ambient temperature and tensile properties at 1670 K. The microstructure consists of relatively fine (Nb, Mo, W, Ti)/sub 5/Si₃, silicide and a Nb solid solution matrix, and the fine eutectic microstructure becomes predominant at a Si content of around 18 mol.%. The hardness of (Nb, Mo, W, Ti(/sub 5/Si₃, silicide in a W-free sample is 1680 GPa, and goes up to 1980 GPa in a W 15 mol.% sample. The hardness, however, of Nb solid solution does not exhibit a remarkable difference when the nominal W content is increased. The elastic modulus shows a similar tendency to the hardness. The optimum tensile properties of the composites investigated are achieved at W 5 mol.% sample, which exhibits a relatively good ultimate strength of 230 MPa and an excellent balance of yield strength of 215 MPa, and an elongation of 3.7%. The SEM fractography generally indicates a ductile fracture in the W-free sample, and a cleavage rupture in W-impregnated ones.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1437-1439
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• 2009

Electrical and optical properties of $SiO_2$-doped ZnO (SZO) films on the corning 7059 glass substrates by using rfmagnetron sputtering method are investigated. The deposition rate becomes maximum near 3 wt.% and gradually decreases when the $SiO_2$ content further increases. The growth rates at 3 wt.% is $4^{\circ}$A/s. We found that the average transmittance of all films is over 80% in the wavelength range above 500 nm. The optical band gap decreases from 3.52 to 3.33 eV with an increase in thickness. X-ray diffraction patterns show that the film with a relatively low $SiO_2$ content (< 4 wt.%) is amorphous. SZO films at the $SiO_2$ contents of 2 wt.% shows the resistivity of about $3.8{\times}10^{-3}{\cdot}cm$. The sheet resistance decreases with increasing the heat treatment temperature.

• Journal of the Korean Ceramic Society
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• v.48 no.5
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• pp.373-378
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• 2011

The composite added with surface-coated chopped carbon fiber showed the microstructure of a 3 dimensional discretional arrangements. The fiber reinforced reaction bonded silicon carbide composite, containing the 50 vol% carbon fiber, showed the porosity of < 1 vol%, 3-point bending strength value of 250MPa and fracture toughness of 4.5 $MPa{\cdot}m^{1/2}$. As the content of carbon fiber was increased from 0 vol% to 50 vol% in the composite, fracture strength was decreased due to the increase of carbon fiber, which has a less strength than SiC and molten Si. On the other hand, the fracture toughness was increased with increasing the amount of carbon fiber. According to the polished microstructure, carbon fiber was shown to have a random 3 dimensional arrangement. Moreover, the fiber pull-out phenomenon was observed with the fractured surface, which can explain the increased fracture toughness of the composite containing high content of carbon fiber.