• Journal of Korea Foundry Society
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• v.29 no.5
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• pp.225-232
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• 2009

For comprehensive understanding of the formation behavior of $\beta-Al_5FeSi$ phase in Al-Si-Cu alloys with the existence of Fe element, microstructure characterizations were performed using combined analysis of OM, SEM-EDS, XRD. Especially, experimental and predictive works on solidification events of $\beta-Al_5FeSi$ phase as well as other phases formed together with $\beta-Al_5FeSi$ have been carried out by using DSC analysis and Java-based Materials Properties software (J. Mat. Pro.). Primary and eutectic $\beta-Al_5FeSi$ phases were able to distinguish from each other on microstructures by their morphological features. Primary $\beta-Al_5FeSi$ phase was seen to have rough surface perpendicular to growth direction, indicating free attachment of solute atoms in liquid state. On the other hand, the eutectic $\beta-Al_5FeSi$ phase was formed with plain and straight surface during eutectic reaction together with $\alpha$-Al phase. The eutectic reaction of $\beta-Al_5FeSi$ and $\alpha$-Al phases was seen to be able to separate into each formation depending on cooling rate.

• 연구논문집
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• s.30
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• pp.111-119
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• 2000

Sintering of alumina powder was studied in the presence of Y-Si oxide and oxynitride additives. The main crystalline phase of the sintering aids pre-reacted at $1400^{\circ}C$ was $\alpha$ - $Y_2$$SiO_2$>$O_7$. Y-N apatite was co-existed in the Si-40N sintering aid because of its high content of N. During the sintering process, liquid phases were formed by the reaction between additives and alumina, and these liquid phases promote the densification of alumina. SEM micrographs showed that uniform grain growth occurred in the system with oxide additive(Si-0N). In the case of oxynitride additive system(Si-20N and Si-40N), bimodal microstructure was observed due to the exaggerated grain growth, As the nitrogen content in the additive system increased the exaggerated grain growth occurred extensively. Bloating, which seemed to be originated by the liberation of $N_2$ gas, occurred un the Si-40N oxynitride additive system.

• Korean Journal of Materials Research
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• v.12 no.11
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• pp.889-893
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• 2002

The reactions of $Cu/Ti/SiO_2$ structures at temperatures ranging from 200 to $700^{\circ}C$ have been studied for various Ti thicknesses. The reaction products initially formed, at around $300^{\circ}C$, were a series of Cu-Ti intermetallics ($Cu_3$Ti/CuTi) with the oxygen dissolved in the Ti moving from the compounds into the remaining unreacted Ti. At $500^{\circ}C$, the $Cu_3$Ti was converted into Cu-rich intermetallics, $Cu_4$Ti, which grew at the expense of the CuTi due to the increased oxygen content in the Ti. In addition, the outdiffusion of Ti, to the Cu surface, and the $Ti-SiO_2$ reactions, caused an abrupt increase in the oxygen content in the Ti layer, which placed thermodynamic restraints on further Ti reactions. Furthermore, thinner Ti layers showed a higher increasing rate of oxygen accumulation for the same consumption of Ti, which led to significantly reduced Ti consumption. The $SiO_2$ film under the Ti diffusion barrier was more easily destroyed with increasing Ti thickness.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.9
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• pp.2065-2070
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• 2010

The diluted PMMA treated $SiO_2$ films as an passivation materials for semiconductor devices was researched by using the FTIR spectra. The diluted PMMA solution with various ratios changed the surface of $SiO_2$ film as the hydrophilic, hydrophobic or hybrid type properties. The sample 7 with little carbon content showed dramatically the chemical variation by the FTIR spectra analysis. Beacuse the little carbon with electrons decreased the polarity and surface energy on the $SiO_2$ film, and then became a stable bonding structure and decreased the leakage current. The FTIR spectra can define the detail variation due to the chemical reaction on the organic thin film, and help to research the characteristic of the organic materials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.4
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• pp.261-266
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• 2010

In this paper, we report the changes of electrical, structural and optical characteristics in $Ge_2Sb_2Te_5$ thin films according to an increase of Si content. The Si-doped $Ge_2Sb_2Te_5$ thin films were prepared by rf-magnetron co-sputtering method. Isothermal annealing was carried out at $N_2$ atmosphere. The crystallization speed (v) of amorphous thin films was evaluated by detecting the reflection response signals using a nano-pulse scanner (wavelength = 658 nm) with illumination power of 1~17 mW and pulse duration of 10~460 ns. Structural phase changes were evaluated by XRD, and the optical transmittance was measured in the wavelength range of 300~3000 nm using UV-vis-NIR spectrophotometer. The sheet resistance (RS) of the thin films was measured using 4 point probe. Conclusivlely, the v-value decreased with an increase of Si content, while the RS-values of both crystalline and amorphous phases were increased. In particular, fcc-to-hexagonal transition was suppressed by the added Si atoms.

• Journal of Korea Foundry Society
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• v.25 no.5
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• pp.216-220
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• 2005

High ductility Al-Mg alloys often contain some Mn and Si, however the effects of these minor alloying elements on various properties of alloys have not been fully understood. In this study the castability and mechanical properties of Al-5%Mg alloy were investigated according to the addition of Mn and Si. The fluidity of the alloys was generally increased by increasing Si or Mn contents. The feedability was also increased by increasing Si content, but it was rather decreased by increasing Mn content. Both the tensile strength and the ductility appeared to be deteriorated by Si addition, while they were found to be improved by Mn addition.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.178-179
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• 2014

In this study, $Ni-W-Si_3N_4$ alloy composite coatings were prepared by pulse electrodeposition method using nickel sulfate bath with different contents of tungsten source, $Na_2WO_4.2H_2O$, and dispersed $Si_3N_4$ nano particles. The structure and microstructure ofcoatings was separately analyzed by X-ray diffraction (XRD) and scanning electron microscope (SEM). Results indicated that nano $Si_3N_4$ and W content in alloy had remarkable effect on microstructure, microhardness and scratch resistant properties. Tungsten content in Ni-W and $Ni-W-Si_3N_4$ alloy ranged from 7 to 14 at.%. Scratch test results suggest that as compared to Ni-W only, $Ni-W-Si_3N_4$ prepared from Ni/W molar ratio of 1:1.5 dispersed with 20 g/L $Si_3N_4$ has shown the best result among different samples.

• Bulletin of the Korean Chemical Society
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• v.29 no.2
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• pp.309-312
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• 2008

Two different anode composite materials comprising of Fe, Cu and Si prepared using high energy ball milling (HEBM) were explored for their capacity and cycling behaviors. Prepared powder composites in the ratio Cu:Fe:Si = 1:1:2.5 and 1:1:3.5 were characterized through X-Ray diffraction (XRD) and scanning electron microscope (SEM). Nevertheless, the XRD shows absence of any new alloy/compound formation upon ball milling, the elements present in Cu(1)Fe(1)Si(2.5)/Graphite composite along with insito generated Li2O demonstrate a superior anodic behavior and delivers a reversible capacity of 340 mAh/g with a high coulombic efficiency (98%). The higher silicon content Cu(1)Fe(1)Si(3.5) along with graphite could not sustain capacity with cycling possibly due to ineffective buffer action of the anode constituents.

• Journal of the Korean Ceramic Society
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• v.25 no.6
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• pp.704-712
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• 1988

In order to investigate the effect of the second phase on Al2O3 matrix, SiC whisker was dispersed in Al2O3 matrix as a second phase over the content range of 5vol% to 20vol%. To this mixture, Y2O3 or TiO2 powder was added as a sintering additive before isostatically pressing and pressureless sintering at 1800-190$0^{\circ}C$ for 90min in N2 atmosphere. With increasing SiC whisker content, relative densities of composites were decreased and the grain growth of Al2O3 was restricted. When Y2O3 was added as a sintering aid the sintering temperature was 180$0^{\circ}C$, the maximum values of flexural strength, hardness and fracture toughness were 537MPa, 12.1GPa, 3.7MPa.m1/2, respectively. However, when the sintering temperature was elevated to 190$0^{\circ}C$, maximum values of flexural strength, hardness and fracture toughness were 453MPa, 17.5GPa, 4.9MPa.m1/2, respectively. Improved mechanical properties are assumed to be attributed to the crack deflection by the second phase SiC whisker and whisker pullout mechanism.

• The Korean Journal of Ceramics
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• v.5 no.2
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• pp.189-194
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• 1999

Crystallization of glasses in the system (Ca, Sr, Ba)$O-Al_2O_3-B_2O_3-SiO_2-TiO_2$ and dielectric properties of crystallized glasses were investigated. As increasing B2O3 content and decreasing SiO2 content in the glass, the major crystalline phase changed from $(Sr, Ba)_2TiSi_2O_8$ to (Ca, Sr, Ba)TiO3, the dielectric constant of crystallized glasses increased and the Temperature Coefficient of Capacitance (TCC) changed to negative. The dielectric constant and TCC was estimated for (Sr, Ba)2TiSi2O8 phase as 18 and -440 $ppm/^{\circ}C$, respectively and for (Ca, Sr, Ba)TiO3 phase as 307 and -1900 $ppm/^{\circ}C$, respectively. The dielectric properties of (Ca, Sr, Ba)TiO3 phase (in this study) were similar to those of (Ca, Ba) TiO_3 solid-solution^12)$, but $(Sr, Ba)_2TiSi_2O_8$ phase (in this study) and $Sr_2TiSi_2O_\;8^4$ showed the different properties.