• Proceedings of the Korean Magnestics Society Conference
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• 2011.06a
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• pp.111-113
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• 2011

변압기, 전동기 등의 에너지 효율을 향상시키기 위해 400 Hz 이상의 주파수에서 사용하는 자성코어 부품의 수요가 증가함에 따라 Si함량이 높은 연자성 코어에 대한 관심이 증가하고 있으며 냉간압연이 어려운 Fe-6.5wt.%Si의 경제적이고 생산성이 높은 분말 성형공정, 주파수에 따른 철손인자들의 영향 및 미세구조 제어에 대한 연구가 체계적이고 지속적 수행되고 있으며 흥미로운 연구결과가 도출되고 있다.

• Proceedings of the Korean Vacuum Society Conference
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• 1996.02a
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• pp.91-91
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• 1996

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.11a
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• pp.109-111
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• 2007

Pulsed DC 마그네트론 스퍼터링 장치를 이용하여 Polymer 및 Glass 기판 위에 $SiN_{\chi}$ (Silicon Nitride) 박막을 합성 시키고 이들의 구조적, 광학적 특성을 조사하였다. 막두께는 100 nm로 고정하였으며, power mode 및 질소 가스 유량비를 변수로 합성하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.799-802
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• 2003

[ $LaNiO_3$ ](LNO) thin films were deposited on various substrates as Si and $Al_2O_3$ by sol-gel process using lanthanum nitrate and nickel acetate. The structure and orientation of the films were characterized by X-ray diffraction. The orientation factors of films on Si(100), Si(111), $SiO_2/Si(100)$ and $Al_2O_3$were 97%, 63%, 73%, and 24% respective. The conductivity was $7.6{\times}10^{-3}{\Omega}{\cdot}cm$ with 10 times coating at Si(100) substrate.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.298-299
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• 2011

최근 입력소자로 활용되는 터치스크린은 키보드나 마우스와 같은 입력장치를 사용하지 않고, 스크린에 손가락, 펜 등을 접촉하여 입력하는 방식이다. 터치패널의 구현방식에 따라 저항막(Resistive) 방식, 정전용량(Capacitive) 방식, SAW (Surface Accoustic Wave; 초음파) 방식, IR (Infrared; 적외선) 방식등으로 구분된다. 특히 최근 관심을 받고 있는 IR 방식은 적외선이 사람의 눈에는 보이지 않으나, 직진성을 가지고 있어 장애물이 있으면 차단되는 특성을 이용한 방식이다. IR방식의 터치패널은 발광(Light emitting)소자와 수광(Light detecting)소자가 마주하도록 배치되어 터치에 의해 차단된 좌표를 인식하게 되며, ITO 필름 등이 필요 없어 Glass 1장으로도 구현이 가능하며 투과율이 우수하다. 이러한 IR 방식의 터치패널을 제작하기 위하여 사용된 IR 광검출기는 광학적 band-gap이 작은 박막물질을 필요로 한다. 본 연구에서는 IR 광검출을 위한 물질로 SiGe를 co-sputtering 기법을 이용하여 성장시켰다. 일반적으로 SiGe 박막을 성장시키기 위하여 저압화학기상증착법(low pressure chemical vapor deposition, LPCVD)이나 고진공 LPCVD를 사용하지만 본 연구에서는 CVD에 비하여 무독성이면서 환경친화적이고 초기투자비용이 낮은 증착장비인 sputtering을 이용하였다. 본 연구에서 성장된 SiGe 박막은 400$^{\circ}C$에서 rf plasma가 인가된 Ge과 dc plasma가 인가된 Si의 power를 조절하여 결정화도가 70% (Fig. 1)이고 결정성장방향이 (111)과 (220)방향으로 성장하는 SiGe 박막을 얻을 수 있었다. 본 논문에서는 co-sputtering 성장조건에 따라 성장된 SiGe의 박막 특성을 논의할 것이다.

• Applied Chemistry for Engineering
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• v.26 no.2
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• pp.138-144
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• 2015

Effects of Co/Al and Si/Al molar ratios of cobalt incorporated SAPO-34 catalysts (CoAPSO-34) on their catalytic lifetime were investigated in dimethyl to olefin (DTO) reaction. The property of CoAPSO-34 catalysts was characterized using XRD, SEM, $^{29}Si$ MAS NMR, and $NH_3$-TPD techniques. First, the lifetime of CoAPSO-34 prepared by varying Co/Al molar ratios was improved than that of using the SAPO-34 catalyst, and the optimal Co/Al molar ratio was 0.0025. The total acid site amounts increased from 0.432 to 1.111 mmol/g with increasing Si/Al molar ratios from 0.05 to 0.20 while fixing a Co/Al molar ratio of 0.0025. However, the catalysts with too high acid site amounts were deactivated rapidly with blockages of the pores due to the fast accumulation of polycyclic aromatic hydrocarbons in the cage. Therefore, the CoAPSO-34 catalyst with a proper Si/Al molar ratio of 0.10 was the most superior in terms of the lifetime, which was improved by about 87% as compared with that of the SAPO-34 catalyst.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.5
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• pp.188-192
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• 2016

In this work, the SiC powders were synthesized through the carbonized matter from the mixture of silica powder and rice husks. The SiC powders, obtained from the carbothermal reduction reaction of silica and carbonized rice husks, were investigated by XRD patterns, XPS, FE-SEM and FE-TEM. In the XRD patterns, the specimens showed clearly very high strong peak of (111) plane near $35^{\circ}$ as well as weak (220) and (311) peak respectively at approximately $60^{\circ}$ and $72^{\circ}$. Under Ar atmosphere, the power synthesized from the mixture (in case of mixing ratio, 6 : 4) of carbonized rice husks and silica showed mainly cubic SiC crystalline phase showing relatively lower ratio of hexagonal phase without residual carbon in XRD pattern. In the TEM analysis, the specimen, synthesized from carbonized rice husks and silica with mixing ratio of 6 : 4 under Ar atmosphere, showed relatively fine particles under $5{\mu}m$ and a crystalline SiC phase of (100) diffraction pattern.

• Journal of Korea Foundry Society
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• v.38 no.6
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• pp.111-120
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• 2018

In this study, the effects of two different casting methods (gravity casting and, diecasting) and various solid-solution conditions on the mechanical properties of ASC (Al-10.5wt%Si-1.75wt%Cu) and ALDC12 (Al-10.3wt%Si-1.72wt%Cu-0.76wt%Fe-0.28wt% Mn-0.32wt%Mg-0.9wt%Zn) alloys were investigated. A thermodynamic solidification analysis program (PANDAT) was used to predict the liquidus, solidus, and phases of the used alloys. In the results of an XRD analysis, ${\beta}$-AlFeSi peaks were observed only in the ALDC12 alloy regardless of the casting method or SST (solid-solution treatment) conditions. However, according to the results of a FE-SEM observation, both ${\theta}(Al_2Cu)$ and ${\beta}$-AlFeSi were found to exist besides ${\alpha}$-Al and eutectic Si in the gravity-casted ASC alloy at $500^{\circ}C$ after a SST of 120min. The ${\alpha}$-AlFeSi and ${\beta}$-AlFeSi phases including the eutectic phases were also found to exist in the ALDC12 alloy. The results of a microstructural observation and analyses by XRD, FE-SEM and EDS were in good agreement with the PANDAT results. The gravity-casted ALDC12 and ASC specimens showed the highest Y.S. and UTS values after aging for three hours at $180^{\circ}C$ after a SST at $500^{\circ}C$ for 30min. At longer solid-solution treatment times at $500^{\circ}C$ in the gravity-casted ALDC12 and ASC specimens, the elongations of the ASC alloys increased, whereas they decreased slightly in the ALDC12 alloys.

• Journal of Adhesion and Interface
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• v.22 no.3
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• pp.111-111
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• 2021

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.212-216
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• 1999

SiC(3C) photodiodes (PDs) were fabricated on p-type Si(111) substrates using chemical vapor deposition (CVD) technique by pyrolyzing tetramethylsilane (TMS) with $H_{2}$ carrier gas. Electrical properties of SiC(3C) were investigated by Hall measurement and current-voltage (I-V) characteristics. SiC(3C) layers exhibited n-type conductivity. Ohmic contact was formed by thermal evaporation Al metal through a shadow-mask. The optical gain $(G_{op})$ of the SiC(3C)/Si PD was measured as a function of the incident wavelength. For the analysis of the photovoltaic detection of the Sic(3C) n/p PD, the spectral response (SR) has calculated by using the electrical parameters of the SiC(3C) layer and the geometric structure of the PD. The peak response calculated for properly chosen parameters was about 0.75 near 550 nm. We expect a good photoresponse in the SiC(3C) heterostructure for the wavelength range of 400~600 nm. The SiC(3C) photodiode can detect blue and near ultraviolet (UV) radiation.