• Transactions on Electrical and Electronic Materials
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• v.6 no.6
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• pp.245-248
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• 2005

The physical and electrical properties of polycrystalline $\beta$-SiC were studied according to different nitrogen doping concentration. Nitrogen-doped SiC films were deposited by LPCVD(1ow pressure chemical vapor deposition) at $900^{\circ}C$ and 2 torr using $100\%\;H_2SiCl_2$ (35 sccm) and $5 \%\;C_2H_2$ in $H_2$(180 sccm) as the Si and C precursors, and $1\%\;NH_3$ in $H_2$(20-100 sccm) as the dopant source gas. The resistivity of SiC films decreased from $1.466{\Omega}{\cdot}cm$ with $NH_3$ of 20 sccm to $0.0358{\Omega}{\cdot}cm$ with 100 sccm. The surface roughness and crystalline structure of $\beta$-SiC did not depend upon the dopant concentration. The average surface roughness for each sample 19-21 nm and the average surface grain size is 165 nm. The peaks of SiC(111), SiC(220), SiC(311) and SiC(222) appeared in polycrystalline $\beta$-SiC films deposited on $Si/SiO_2$ substrate in XRD(X-ray diffraction) analysis. Resistance of nitrogen-doped SiC films decreased with increasing temperature. The variation of resistance ratio is much bigger in low doping, but the linearity of temperature dependent resistance variation is better in high doping. In case of SiC films deposited with 20 sccm and 100 sccm of $1\%\;NH_3$, the average of TCR(temperature coefficient of resistance) is -3456.1 ppm/$^{\circ}C$ and -1171.5 ppm/$^{\circ}C$, respectively.

• Korean Journal of Materials Research
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• v.8 no.6
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• pp.484-492
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• 1998

The formation mechanism of the epitaxial cobalt silicide from Co/Ti/OOO) Si structure has been investigated. The transition temperature of CoSi to CoSi, was found to increase with increasing the Ti interlayer thickness, which may be owing to the occupation of the tetrahedral sites by Ti atoms in the CoSi crystal structure as well as the blocking effect of the Ti interlayer on the diffusion of Co. Also, the Co- Ti-O ternary compound formed at the metal! Si interface at the begining of silicidation, which seems to play an important role in epitaxial growth of Co silicide. The final layer structures obtained after a rapid thermal annealing of the Cot Ti/( 100) Si bi-layer structure turned out to be Ti oxide/Co- Ti-Si/epi-$CoSi_2$/OOO)

• Journal of Korea Foundry Society
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• v.20 no.4
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• pp.254-259
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• 2000

Metal matrix composites(MMCs) reinforced with hard particles have many potential application in aerospace structures, auto parts, semiconductor package, heat resistant panels, wear resistant materials and so on. In this work, the effect of SiC partioel sizes(50 and 100 ${\mu}m$) and additional elements such as Si, Cu and Ti on the microstructure and the wear property of $Al-5Mg-X(Si,Cu,Ti)/SiC_p$ composites produced by pressureless infiltration method have been investigated using optical microscopy, scanning eletron microcopy(SEM) with EDS(energy dispersive spectrometry), hardness test, X-ray diffractometer(XRD) and wear test. In present study, the sound $Al-5Mg-X(Si,Cu,Ti)/SiC_p$(50 and 100 ${\mu}m$) composites were fabricated by pressureless infiltration method. The $Al-5Mg-0.3Si-O.1Cu-O.1Ti/SiC_p$ composite with $50 {\mu}m$ size of SiC particle has higher hardness and better wear property than any other composite with $100{\mu}m$ size of SiC particle produced by pressureless infiltration method. The hardness and wear property of $Al-5Mg/SiC_p$(50 and 100 ${\mu}m$) composites were enhanced by the addition of Si, Cu and Ti in Al-5%Mg matrix alloy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.755-758
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• 2000

YMnO$_3$films have been deposited with different Rf powers of 60W, 80W, 100W, and 120W. The structural properties of YMnO$_3$films on Si(100) were analysed by XRD(X-ray diffraction). The c-axis oriented peaks of YMnO$_3$were observed deposited in YMnO$_3$/Si(100) structure of RF power at 87$0^{\circ}C$ in oxygen ambient, and the peaks were enlarged by increasing The RF powers. The dielectric constant of the film deposited at 100W and 120W of RF power were about 19, 20 respectively.

• Korean Journal of Materials Research
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• v.8 no.7
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• pp.579-583
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• 1998

Silicide layer structures, agglomeration of silicide layers, and dopant redistributions for the Co/Ti bilayer sputter-deposited on the P-doped polycrystalline Si substrate and subjected to rapid thermal annealing were investigated and compared with those on the single Si substrate. The $CoSi_2$ phase transition temperature is higher and agglomeration of the silicide layer occurs more severely for the Co/Ti bilayer on the doped polycrystalline Si substrate than on the single Si substrate. Also, dopant loss by outdiffusion is much more significant on the doped polycrystalline Si substrate than on the single Si substrate. All of these differences are attributed to the grain boundary diffusion and heavier doping concentration in the polycrystalline Si. The layer structure after silicidation annealing of Co/ Tildoped - polycrystalline Si is polycrystalline CoSi,/polycrystalline Si, while that of Co/TiI( 100) Si is Co- Ti- Si/epi- CoSi,/(lOO) Si.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.80-80
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• 2000

Surface acoustic wave (SAW) devices have become more important as mobile telecommunication systems need h호-frrequency, low-loss, and down-sized components. Higher-frequency SAW divices can be more sasily realized by developing new h호-SAW-velocity materials. The ZnO/diamond/Si multilasyer structure is one of the most promising material components for GHz-band SAW filters because of its SAW velocity above 10,000 m/sec. Silicon carbide is also a potential candidate material for high frequency, high power and radiation resistive electronic devices due to its superior mechanical, thermal and electronic properties. However, high price of commercialized 6- or 4H-SiC single crystalline wafer is an obstacle to apply SiC to high frequency SAW devices. In this study, single crystalline 3C-SiC thin films were grown on Si (100) by MOCVD using bis-trimethylsilymethane (BTMSM, C7H20Si7) organosilicon precursor. The 3C-SiC film properties were investigated using SEM, TEM, and high resolution XRD. The FWHM of 3C-SiC (200) peak was obtained 0.37 degree. To investigate the SAW propagation characteristics of the 3C-SiC films, SAW filters were fabricated using interdigital transducer electrodes on the top of ZnO/3C-SiC/Si(100), which were used to excite surface acoustic waves. SAW velocities were calculated from the frequency-response measurements of SAW filters. A generalized SAW mode. The hard 3C-SiC thin films stiffened Si substrate so that the velocities of fundamental and the 1st mode increased up to 5,100 m/s and 9,140 m/s, respectively.

• Journal of the Korean Magnetics Society
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• v.9 no.6
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• pp.306-311
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• 1999

$La_{2/3}Sr_{1/3}MnO_3(LSMO)/YSZ/SiO_2/Si(100)$ polycrystalline thin films were fabricated be chelated sol-gel method The effect of YSZ buffer layer at low field (120 Oe) spin-polarized tunneling magnetotransport (TMR) properties of LSMO thin film was studied at room temperature. Single perovskite LSMO thin films was obtained. The maximum TMR ratio was increased from 0.2 to 0.42 % by the insertion of YSZ buffer. YSZ as diffusion barrier was attributed to the fine microstructure of LSMO thin films and the reduction of dead layer between LSMO and $SiO_2/Si(100)$ interfaces.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.4
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• pp.274-280
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• 1998

Polycrystalline $Sr_2Nb_2O_7$ ceramics with very high Curie temperature were sintered using the powder derived by the chemical coprecipitation method (CCP). The phase evolution and grain-orientation of sintered samples were examined by XRD, while sintering behavior, dielectric properties and polarization were studied by SEM and ferroelectric tester. Extremely high degree of grain-orientation was observed along the (0k0) direction, which resulted in anisotropic dielectric properties of the sintered samples, with the dielectric constant values approaching those for single crystal. Thin film fabrication of $Sr_2Nb_2O_7$ in the pyroniobate family was also attempted on $SiO_2$/Si(100), Pt/$SiO_2$/Si(100), Pt/Ti/$SiO_2$/Si(100) and Pt/$ZrO_2/SiO_2/Si_2(100)$ substrates, using metalorganic decomposition (MOD) process. Neodecanoate precursor solution was prepared by mixing strontium neodecanoate with niobium neodecanoate synthesized from niobium ethoxide. It was found that $Sr_2Nb_2O_7$ single phase appeared in XRD patterns the samples annealed above $950^{\circ}C$. The effect of substrate type on film microstructure and dielectric properties was observed.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.146-146
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• 2000

We have studied the etching of Si(100)-2xl by Cl and Br, using scanning tunneling microscopy to obtain morphological information that can be related to reaction and desorption pathways. Clean surfaces were exposed to molecular halogens at room temperature to produce well-defined chemisorption structures for coverages in the range 0.2-1.0 ML. Heating to 750-750 K induced etching by thermal desorpton. Analysis of the halogen concentration before and after heating indicated that the rates of desorption for SICl2 or SiBr2 were greatest for intermediate coverages and that etching was suppressed as saturation was reached. Hence, desorption is not simply proportional to the concentration of species that can form adsorbed precursors SiX2(a). Instead, it is directly coupled to the creation of monomer vacancies adjacent to the SiX2 (a) unit because this increases the lifetime of the excited state and increases the likelihood of its desorption. Increasing the surface concentration of halogens reduces the rate of vacancy formation. We show that these rates are also affected by a re-dimerization process in the high temperature Br-stabilized Si(100)-3xl reconstruction that increases the likelihood of siBr2(a) formation and enhances its desorption. I will also discuss recent result for F etching on Si(100)-2xl.

• Korean Journal of Materials Research
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• v.6 no.8
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• pp.808-816
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• 1996

(100) Si 기판위에 전자 빔 증착법을 이용하여$ 90\AA$두께의 Ti과 $120\AA$두께의 Co를 순차적으로 증착시켰다. 그 후 질소분위기하의 $350-900^{\circ}C$온도구간에서 급속열처리함으로써 (100) Si 기판위의 Co/Ti 이중 박막의 실리사이드화 반응이 일어나게 했으며 이를 XRD, AES, TEM을 이용하여 분석하였다. $500^{\circ}C$이하의 온도에서는 Co원자들이 Ti층쪽으로 빠르게 확산하여 Si와 반응하기 이전에 Ti원자들과 상호 혼합되어 어떠한 실리사이드도 형성되지 않았다. $500^{\circ}C$에서 열처리된 시편의 고분해능전자현미경 영상을 통해 Co-Ti 혼합층과 실리콘 기판과의 계면에서 (100)Si 기판과 정합관계를 가지는 CoSi2가 형성되었음을 확인했다. $600^{\circ}C$열처리에 의해 Co-Ti-Sitka성분 실리사이드가 형성되기 시작하였으며, 형성된 삼성분 실리사이드는 Ti의 out-diffusion에 의해 $900^{\circ}C$ 이상의 온도에서는 불안정하였다. Co/Ti이중 박막에 의해 형성된 CoSi2는 실리콘 기판과 평탄한 계면을 가지며 실리콘 기판에 대해 (100)우선성장방위를 가졌다.