• Title/Summary/Keyword: Si(IV)

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Photoluminescence Imaging of SiO2@ Y2O3:Eu(III) and SiO2@ Y2O3:Tb(III) Core-Shell Nanostructures

  • Cho, Insu;Kang, Jun-Gill;Sohn, Youngku
    • Bulletin of the Korean Chemical Society
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    • v.35 no.2
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    • pp.575-580
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    • 2014
  • We uniformly coated Eu(III)- and Tb(III)-doped yttrium oxide onto the surface of $SiO_2$ spheres and then characterized them by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction crystallography and UV-Visible absorption. 2D and 3D photoluminescence image map profiles were reported for the core-shell type structure. Red emission peaks of Eu(III) were observed between 580 to 730 nm and assigned to $^5D_0{\rightarrow}^7F_J$ (J = 0 - 4) transitions. The green emission peaks of Tb(III) between 450 and 650 nm were attributed to the $^5D_4{\rightarrow}^7F_J$ (J = 6, 5, 4, 3) transitions. For annealed samples, Eu(III) ions were embedded at a $C_2$ symmetry site in $Y_2O_3$, which was accompanied by an increase in luminescence intensity and redness, while Tb(III) was changed to Tb(IV), which resulted in no green emission.

Structural, Optical, and Magnetic Properties of Si1-xMnxTe1.5 Single Crystals (Si1-xMnxTe1.5 단결정의 구조적, 광학적, 자기적 특성에 관한 연구)

  • Hwang, Young-Hun;Um, Young-Ho;Cho, Sung-Lae
    • Journal of the Korean Magnetics Society
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    • v.16 no.3
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    • pp.178-181
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    • 2006
  • We have investigated the Mn concentration-dependent structural, optical, magnetic properties in IV-VI diluted magnetic semiconductor $Si_{1-x}Mn_xTe_{1.5} $ crystals prepared by the vertical Bridgman technique. X-ray studies showed the single crystalline hexagonal crystal structure. From the optical absorption measurements energy band gap were found to decreases with increasing x and temperature. From the magnetization measurements the samples had ferromagnetic ordering with Curie temperature $T_C$ about 80 K. With increasing Mn concentration, the average magnetic moments per Mn atom determined from the saturated magnetization increased.

Occurrence and Chemical Composition of White Mica and Ankerite from Laminated Quartz Vein of Samgwang Au-Ag Deposit, Republic of Korea (삼광 금-은 광상의 엽리상 석영맥에서 산출되는 백색운모와 철백운석의 산상 및 화학조성)

  • Yoo, Bong Chul
    • Korean Journal of Mineralogy and Petrology
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    • v.33 no.1
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    • pp.53-64
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    • 2020
  • The Samgwang deposit has been one of the largest deposits in Korea. The deposit consists of series of host rocks including Precambrian metasedimentary rocks and Jurassic Baegunsa formation, which unconformably overlies the Precambrian metasedimentary rocks. The deposit consists of eight lens-shaped quartz veins which filled fractures along fault zones in Precambrian metasedimentary rock, which feature suggest that it is an orogenic-type deposit. Laminated quartz veins are common in the deposit which contain minerals including quartz, ankerite, white mica, chlorite, apatite, rutile, arsenopyrite, sphalerite, chalcopyrite and galena. The structural formulars of white micas from laminated quartz vein and wallrock alteration are determined to be (K1.02-0.82Na0.02-0.00Ca0.00)(Al1.73-1.58Mg0.26-0.16Fe0.23-0.10Mn0.00Ti0.03-0.01Cr0.01-0.00)(Si3.35-3.22Al0.79-0.65)O10(OH)2 and (K0.75-0.67Na0.01Ca0.00) (Al1.78-1.74Mg0.16-0.15Fe0.15-0.13Mn0.00Ti0.04-0.02Cr0.01-0.00)(Si3.33-3.26Al0.74-0.67)O10(OH)2, respectively. It suggest that white mica from laminated quartz vein has higher interlayer cation (K+Na+Ca) and Fe+Mg+Mn+Ti content in octahedral site compared to the white mica from the wallrock alteration. Compositional variations in white mica from laminated quartz vein can be caused by phengitic or Tschermark substitution ((Al3+)VI+(Al3+)IV <-> (Fe2+ or Mg2+)VI)+(Si4+)IV) and (Fe3+)VI <-> (Al3+)VI substitution. Ankerite from laminated quartz vein has compositional variations of FeO and MgO contents along crystal growth direction. The geochemical and textural features suggest that laminated quartz vein from the Samgwang gold-silver deposit was formed during ductile shear stage, which is an important main gold-silver ore-forming event in orogeinc deposit.

Analysis of the North Galactic Pole region with FIMS

  • Choe, Yeon-Ju;Min, Gyeong-Uk;Seon, Gwang-Il
    • The Bulletin of The Korean Astronomical Society
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    • v.35 no.1
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    • pp.71.2-71.2
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    • 2010
  • Cooling hot gas sets a floor on the ionization level for diffuse gas in the ISM in general and the galactic halo. Many high galactic latitude sight lines, cooling hot gas is the dominant source of the ionization. Such sites are prime regions for the formation of both C IV and Si IV ions at a temperature of T~105K. To study of the ISM that have the 104.5~6K ionization state by ionization or photoionization by the collision, searching for the radiation energy that is emitted at far ultra violet range is required. In this paper, we report the analysis of NGP( North Galactic Pole, $l:270^{\circ},b:90^{\circ},rad:40^{\circ}$) region by fuv($1350{\sim}1750{\AA}$) data that are surveyed with FIMS. After making the FIMS FUV image of the NGP region, we divided up into 50 small regions for that and got the spectrum emission lines from each one.

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Analysis of the North Galactic Pole region with FIMS

  • Choe, Yeon-Ju;Min, Gyeong-Uk;Seon, Gwang-Il
    • The Bulletin of The Korean Astronomical Society
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    • v.35 no.2
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    • pp.70.2-70.2
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    • 2010
  • Cooling hot gas sets a floor on the ionization level for diffuse gas in the ISM in general and the galactic halo. Many high galactic latitude sight lines, cooling hot gas is the dominant source of the ionization. Such sites are prime regions for the formation of both C IV and Si IV ions at a temperature of T~105K. To study of the ISM that have the 104.5~6K ionization state by ionization or photoionization by the collision, searching for the radiation energy that is emitted at far ultra violet range is required. In this paper, we report the analysis of NGP(North Galactic Pole, $l:0^{\circ},b:90^{\circ}$,rad: $40^{\circ}$) region by fuv($1350\sim1750\AA$) data that are surveyed with FIMS. After making the FIMS FUV image of the NGP region, we divided up into some small regions for that and got the spectrum emission lines from each one.

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EFFECT OF BASE OILS CHARACTERISTICS ON ATF PERFORMANCE

  • Moon, Woo-Sik;Yang, Si-Won
    • Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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    • 2001.06a
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    • pp.191-197
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    • 2001
  • Performance requirements for automatic transmission fluids have been changing to reflect the design changes of automatic transmission. The major purpose for these design changes is to improve fuel economy and drivability. The use of special base oils like API Group III and IV base oils has increased in order to formulate high performance ATF. In this study. the effect of base oils characteristics on ATF performance is investigated, mainly regarding differences in frictional characteristics with deterioration. Moreover, low-temperature fluidity. oxidation stability. and seal compatibility are also compared for four different ATFs. From the investigation, it was found that the use of Group III and IV base oils in ATF has several benefits in low temperature viscosity. oxidation stability and SAE No.2 friction characteristics.

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IUE SPECTRA OF SEYEERT 1 GALAXY NGC 7469-BLR CHARACTERISTICS OF NGC 7469 (SEYFERT 1 은하 NGC 7469의 IUE SPECTRA-NGC 7469 BLR의 물리적 특성)

  • Son, Dong-Hoon;Hyung, Siek
    • Journal of Astronomy and Space Sciences
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    • v.22 no.3
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    • pp.187-196
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    • 2005
  • From the line ratios of Si III] 1892 to C III] 1909 (Feibelman & Aller 1987), we estimated the BLR electron densities and their changes of Seyfert 1 galaxy NGC 7469 using IUE spectra observed from June 11 to July 29, 1996 (Wanders et al. 1997). We separated blended Si III] and C III] lines using the STARLINK/DIPSO and measured their fluxes within the error of $12.4\%\;and\;6.6\%,$ respectively. Electron density fluctuated from $10^{9.69}\;to\;10^{10.93}$ during about two month period, i.e. 17.3 times density variation within 50 days. We also derived time delays from UV emission line variations .elative to the continuum $(at\;1315{\AA}):$ 2 days for C IV, 4 days for C III], 8 days for Si III]. This suggests that their stratified UV line emission regions are at 0.002 pc, 0.004 pc and 0.006 pc, respectively, from the central region. Based on the BLR sizes and their rotation velocities deduced from the line profiles, we estimate the central black hole mass as about $10^6M_{\odot}$

Synthesis and Characterization of Covalently Cross-Linked SPEEK/Cs-substituted MoSiA/Ceria Composite Membranes with MoSiA for Water Electrolysis (MoSiA를 이용한 수전해용 공유가교 SPEEK/Cs-MoSiA/Ceria복합막의 제조 및 성능 연구)

  • SEO, HYUN;SONG, YU-RI;OH, YUN-SUN;MOON, SANG-BONG;CHUNG, JANG-HOON
    • Transactions of the Korean hydrogen and new energy society
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    • v.26 no.6
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    • pp.524-531
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    • 2015
  • To improve the electrochemical and mechanical characteristics, engineering plastic of the sulfonated polyether ether ketone (SPEEK) as polymer matrix was prepared in the sulfonation reaction of polyether ether ketone (PEEK). The SPEEK organic-inorganic blended composite membranes were prepared by sol-gel casting method. It was loaded with the highly dispersed ceria and cesium-substituted molybdosilicic acid (Cs-MoSiA) and 1,4-diiodobutane which was cross-linking agent contents of $10{\mu}L$. Cs-MoSiA was added to increase proton conductivity. Ceria ($CeO_2$) was used as a free radical scavenger which degrade the membrane in polymer electrolyte membrane water elctrolysis (PEMWE). In conclusion, CL-SPEEK/Cs-MoSiA/Ceria 1% composite membrane showed high proton conductivity 0.2104 S/cm at $25^{\circ}C$ which was better than Nafion 117 membrane.

GSMBE 방법으로 Si(110) 기판 위에 성장된 GaN 박막의 미세구조 연구

  • Lee, Jong-Hun;Kim, Yeong-Heon;An, Sang-Jeong;No, Yeong-Gyun;O, Jae-Eung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.193.1-193.1
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    • 2015
  • 실리콘 (Si) 기판 위에 고품질의 갈륨질화물 (GaN) 박막을 성장시키기 위한 노력이 계속되고 있다. 실리콘 기판은 사파이어 기판 보다 경제적인 측면에서 유리하고, 실리콘 직접화 공정에 GaN 소자를 쉽게 접목 가능하다는 장점이 있다. GaN 박막은 2차원 전자 가스형성을 통한 고속소자, 직접 천이형 밴드갭을 이용한 발광소자 및 고전압 소자로써 활용 가능한 물질이다. 종래에는 Si(100) 및 Si(111) 기판 위에 GaN 박막 성장에 대한 연구가 주로 진행되었다. 하지만 대칭성과 격자 불일치도 등 결정학적 특성을 고려할 때 Si(100) 기판 위에 고품질의 GaN 박막을 성장시키는 것은 쉽지 않다. Si(111) 기판은 실리콘 소자 직접화 공정에 적합하지 못한 단점을 가지고 있다. 반면, 최근 Si(110) 기판 위에서 비등방적 변형 제어를 통한 고품질 GaN 박막 성장이 보고 되어 실리콘 집적 소자와 결합한 고전압 소자 및 고속소자 구현에 관한 연구가 진행되고 있다. 본 연구에서는 투과전자현미경 연구를 바탕으로 Si(110) 기판 위에 성장된 GaN의 미세구조에 관한 연구를 소개한다. 열팽창계수의 차이에 의한 GaN 박막 내 결함 생성을 줄이기 위하여 AlN 완충층이 사용되었다. GaN 박막을 암모니아 ($NH_3$) 유량이 다른 조건에서 성장시킴으로써 GaN 박막 미세구조의 암모니아 유량 의존성에 관한 연구를 진행하였다. GaN 박막에서 투과전자현미경 연구와 X-ray 회절 연구를 통하여 결함 거동 및 결정성을 확인하였다. $NH_3$ 유랑이 증가함에 따라 GaN의 성장 거동이 3차원에서 2차원으로 변화됨을 관찰하였다. 또한, 전위밀도의 증가도 확인되었다. $NH_3$ 유량이 낮은 경우 GaN 전위는 AlN와 GaN 경계에 주로 위치하고 GaN 표면 근처에는 전위밀도가 감소하였으나, $NH_3$ 유량이 높을 경우 GaN 박막 표면까지 전위가 관통됨을 확인하였다.

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