• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.63-66
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• 2003

To diffuse Zn at solid-state, the $SiO-2$/ZnO/$SiO_2$ wafers was made by PECVD and RF Sputter. Thicknesses of bottom $SiO_2$ and cap $SiO_2$ was about 500 ${\AA}$ and about 3500 ${\AA}$. Diffusion temperatures were $760^{\circ}C$, $780^{\circ}C$, and $800^{circ}C$, and diffusion times were 1, 2, 3, 4, 5, and 6 hr. LED chips were fabricated by the diffused wafers at Fab. The peak wavelength of all chips showed about 625~650 nm and red color. Main reason for Iv change was by diffusion temperature not diffusion time. The lower temperature was the higher Iv. We thick that these properties is because of the very high diffusion temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.481-485
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• 2003

To diffuse Zn at solid-state, the $SiO_2/ZnO/SiO_2$ wafers was made by PECVD and RF Spotter. Thicknesses of bottom $SiO_2$ and cap $SiO_2$ was about $500{\AA}$ and about $3500{\AA}$. First test was Diffusion temperatures were $760^{\circ}C$, $780^{\circ}C$, and $800^{\circ}C$, and diffusion times were 1, 2, 3, 4, 5, and 6 hr and 2nd test was Diffusion temperatures were $760^{\circ}C$, $720^{\circ}C$, and $680^{\circ}C$, and diffusion times were 1, 2, 3, 4, 5, and 6 hr. LED chips were fabricated by the diffused wafers at Fab. The peak wavelength of all chips showed about $625{\sim}650\;nm$ and red color Main reason for Iv change was by diffusion temperature not diffusion time. The lower temperature was the higher Iv. We thick that these properties is because of the very high diffusion temperature.

• The Bulletin of The Korean Astronomical Society
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• v.36 no.2
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• pp.110.2-110.2
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• 2011

Nishikida et al. (2006) presented the first far-ultraviolet (FUV) em${\lambda}$ission-line images of the Vela supernova remnant (SNR) obtained with FIMS/SPEAR instrument. Those include C III ${\lambda}$977, O VI ${\lambda}{\lambda}$1032, 1038, Si IV+O IV] ${\lambda}{\lambda}$1393, 1403 (un-resolved), C IV ${\lambda}{\lambda}$1548, 1551 emission-line images. As a following work, we re-constructed these emission-line images using the new-version processed FIMS/SPEAR data. Additionally, we made N IV] ${\lambda}$1486, He II ${\lambda}$1640.5, O III] ${\lambda}{\lambda}$1661, 1666 emission-line images. The new-version images cover the whole region of the Vela SNR and show more resolved features than the old-version. We compare these FUV emission-line images with other wavelength (X-ray, optical, etc.) images obtained in previous studies.

• Journal of the Korean Chemical Society
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• v.8 no.4
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• pp.147-152
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• 1964

Vanadium (IV) and vanadium (V) cupferrate compositions in benzene phase were determined by molar ratio method and continuous variation method spectrophotometrically at 450$m{\mu}$ or 445$m{\mu}$ of wavelength. Compositions of vanadium (IV) cupferrates, V(IV)/Cupf, varied from 1/2 to 1/4 with the acidity of solution from which the complexes were precipitated. The complexes precipitated were vanadium(IV) cupferrate($VCupf_4$) in solution with lower pH than 1.0, and vanadyl(IV) cupferrate ($VOCupf_2$) in solution with 1.8-4.3 of pH. It was considered, however, that the complexes in solution with 1.3-1.7 of pH might be hydrogen vanadyl(IV) cupferrate ($HVOCupf_3$) or nearly equimolar mixture of $VCupf_4\;and\;VOCupf_2$ complexes. Vanadium (V) cupferrate composition did not vary with the acidity of solution from which the complexes were precipitated. In solution with lower pH than 1.8, the complex precipitated was hydrogen vanadyl (V) cupferrate, $HVO_2Cupf_2$.

• Journal of the Korean Vacuum Society
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• v.2 no.2
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• pp.236-245
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• 1993

Single crystals, SbSI : V, SbSeI : V, BiSI : V, BiSeI : V, SbSI : Cr, SbSeI : Cr, BiSI : Cr, BiSeI : Cr, SbSI : Ni, SbSeI : Ni, BiSI : Ni, and BiSeI : Ni were grown by the vertical Bridgman method. It is found that the grown single crystals have an orthorhombic structure and the indirect optical transitions. The temperature dependence of energy gap shows the two reflection point related with the phase transitions and is well fitted with Varshni equation in the continuous region. The optical absorption peaks due to the doped impurities (V, Cr and Ni) are respectively attributed to the electron transitions between the split energy levels of $V^{+2}$, $Cr^{+2}$ and $Ni^{+2}$ ions sited at $T_d$ symmetry of the host lattice.

• The Bulletin of The Korean Astronomical Society
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• v.40 no.1
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• pp.83.4-84
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• 2015

We report that a strong downflow event caused three-minute oscillations in the solar atmosphere. Our observations were carried out by using the Fast Imaging Solar Spectrograph (FISS) of the 1.6 meter New Solar Telescope (NST) and the Interface Region Imaging Spectrograph (IRIS). Our main findings are as follows: (1) The strong downflow was seen at the $H{\alpha}$ absorption line at first, and then appeared at the Si IV and C II emission lines. It seems that the characteristics of the downflow are consistent with a coronal rain event. (2) After the event, oscillations of velocity were identified in the chromospheric lines and transition region lines. (3) The amplitudes of oscillations were 2km/s at Mg II line and 3km/s at C II and Si IV lines and decreased with time. (4) The period of the oscillation was 2.67 minutes at first, but gradually increased with time. Our findings are in agreement with Chae & Goode (2015)'s theory that of acoustic waves generated by a disturbance in a gravitationally-stratified medium.

• Analytical Science and Technology
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• v.13 no.3
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• pp.323-331
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• 2000

Two chelating resins, XAD-16-TAC and XAD-16-TAO were synthesized by Amberlite XAD-16 macroreticular resin with 2-(2-thiazolylazo)-p-cresol (TAC) and 4-(2-thiazolylazo)-orcinol (TAO) as functional groups. The sorption behaviour of Zr(IV), Th(IV) and U(VI) with two chelating resins were examined with respect to the effect of pH and masking agent by batch methods. It was obtained that the optimum pH was in the range of 5-6, and two chelating resins showed good separation efficiency of Zr(IV) or Th(IV) by using $NH_4F$ as a masking agent. Characteristics of desorption were investigated with 0.1-2 M $HNO_3$ as desorption agent. It was found that 2 M $HNO_3$ showed high desorption efficiency to most of metal ions except Zr(IV). XAD-16-TAC resin is applied to separation and preconcentration of trace Zr(IV) from mixed metal ions. Also, Th(IV) ion can be successfully separated from U(VI) and Zr(IV) ion by using XAD-16- TAO resin.

• Transactions on Electrical and Electronic Materials
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• v.13 no.2
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• pp.69-72
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• 2012

In this study, deposition of low-dielectric constant SiOC(H) films by conventional plasma-enhanced chemical vapor deposition (PECVD) were investigated through various characterization techniques. The results show that, with an increase in the plasma power density, the relative dielectric constant (k) of the deposited films decreases whereas the refractive index increases. This is mainly due to the incorporation of organic molecules with $CH_3$ group into the Si-O-Si cage structure. It is as confirmed by FT-IR measurements in which the absorption peak at 1,129 $cm^{-1}$ corresponding to Si-O-Si cage structure increases with power plasma density. Electrical characterization reveals that even after fast thermal annealing process, the leakage current density of the deposited films is in the order of $10^{-11}$ A/cm at 1.5 MV/cm. The reliability of the SiOC(H) film is also further characterized by using BTS test.

• Journal of Astronomy and Space Sciences
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• v.15 no.2
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• pp.335-340
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• 1998

We obtained UV light curves of 44i Bootis, a W UMa type star from the IUE low dispersion spectra. In order to investigate variations of the emission lines from chromospheric activity and transition region, UV line intensity has been measured for CI, CII, ClV, SiIV, HeII lines. Through plotting the line intensity with the orbital phase, we found that emission lines showed maximum at $0^p.2;and;0^p.8$ of the light curves, indicating the chromospheric activity of contact binary, 44i Bootis. We found that the light curves of UV emission lines is strongly modulated by the variation of chromospheric activities of 44i Bootis.

• Transactions on Electrical and Electronic Materials
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• v.15 no.3
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• pp.159-163
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• 2014

More accurate CD (Critical Dimension) control is required for the nanometer-scaled devices. However, since the reflectivity between substrate and PR (Photoresist) becomes higher, the CD (Critical Dimension) swing curve was intensified. The higher reflectivity also causes PR notching due to the pattern of sub-layer. For this device requirement, it was optimized for the thickness, refractive index(n) and absorption coefficient(k) in the bottom anti-reflective coating(BARC; SiON) and photoresist with the minimum reflectivity. The computational simulated conditions, which were determined with the thickness of 33 nm, n of 1.89 and k of 0.369 as the optimum condition, were successfully applied to the experiments with no standing wave for the 0.13um-device. At this condition, the lowest reflectivity was 0.44%. This optimum condition for BARC SiON film was applied to the process for 0.13um-device. The optimum SiON film as BARC to PR and sub-layer could be formed with the accurate CD control and no standing waver for the nanometer-scaled semiconductor manufacturing process.