• Water for future
• /
• v.31 no.5
• /
• pp.107-114
• /
• 1998

• Journal of Korea Foundry Society
• /
• v.37 no.4
• /
• pp.108-114
• /
• 2017

In this study, we investigated the effect of the Si content on the secondary dendrite arm spacing (SDAS) of hypoeutectic Al-Si binary alloys in the range of 4~10 wt% Si. Cooling curves were measured during the solidification of the alloy cast in a step-wise mold. We compared two kinds of solidification time: the first is the total solidification time for both dendritic and eutectic growth, and the second is the solidification time for only dendritic growth. The proportional constant in the relationship between SDAS and cooling rate was estimated, as this constant represents the stability of the cast microstructure. The proportional constant decreased with the Si contents from 4 wt% to 8 wt%, and it remains relatively uniform with up to 10 wt% of Si.

• Journal of Welding and Joining
• /
• v.15 no.5
• /
• pp.104-114
• /
• 1997

The microstructure and bond strength were investigated on the SiC/SiC and SiC/mild steel joints brazed by Ag-5at%Ti alloy. Ag-5at%Ti-2at%Fe and -5at%Fe brazing alloys were also used to see the effects of Fe addition on the bond strength of SiC/SiC brazed joints. Brazing temperature and brazing gap were selected and examined as brazing variables. The microstructure of SiC/SiC brazed joints was affected by Fe addition to the Ag-5at%Ti alloy, but the bond strength was not. Increasing brazing temperature also changed the microstructure of $Ti_5Si_3$ reaction layer and brazing alloy matrix of the SiC/SiC and SiC/mild steel joints, but not the bond strength. Brazing gap had a great effects on the bond strength. Decreasing brazing gap from 0.2 mm to 0.1 mm in SiC/SiC brazing increased the bond strength from 187 MPa to 263 MPa and, in SiC/mild steel brazing, from 189 MPa to 212 MPa. It was concluded that the most important parameter on the bond strength in SiC/SiC and SiC/mild steel brazing was the relative ratio between brazing gap and specimen size.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2012.11a
• /
• pp.113-114
• /
• 2012

본 연구는 segment target을 사용하여 unbalanced magnetron sputtering을 활용하여 고 CrZr-Si-N 박막을 합성하고 박막의 미세구조 및 마모 특성을 연구하는데 그 목적이 있다. 박막의 Si 함량을 조절하기 위하여 각 segment target은 Cr,Zr을 일정vol% 유지하며 Si vol%만 변화하여 설계하였다. Si 함량별로 제작된 마모실험 시편의 미세구조는 XRD, FE-SEM, AFM, TEM을 통하여 분석하였으며, ball on disk type의 마모 시험기를 통해 그 마모 특성을 분석하였으며,

• Proceedings of the Korean Vacuum Society Conference
• /
• 2005.02a
• /
• pp.34-34
• /
• 2005

• Proceedings of the Korean Vacuum Society Conference
• /
• 2000.02a
• /
• pp.114-114
• /
• 2000

III-nitride 게 물질들은 blue와 UV 영역의 LED, LD와 같은 광소자뿐만 아니라 HBT, FET와 같은 전자소자로도 널리 응용되고 있다. 이와 같은 물질을 이용한 소자를 제작할 경우 낮은 저항의 ohmic contact은 필수적이다. p-GaN의 ohmic contact은 아직까지 많은 문제점을 내포하고 있다. 그 중의 하나는 높은 doping 농도(>1018cm-3)의 p-GaN 박막을 성장하기가 어렵다는 것이며, 또 하나는 낮은 접촉 비저항을 얻기 위해선 7.5eV 이상의 큰 재가 function을 지닌 금속을 선택해야 한다. 그러나 5.5eV 이상의 재가 function을 갖는 금속은 존재하지 않는다. 위와 같은 문제점들은 p-GaN의 접촉 비저항이 10-2$\Omega$cm2이상의 높은 값을 갖게 만들고 있으며 이에 대한 해결방안으로는 고온의 열처리를 통하여 p-GaN와 금속사이에서 화학적 반응을 일으킴으로써 표면근처에서 캐리어농도를 증가시키고, 캐리어 수송의 형태가 tunneling 형태로 일어날 수 있도록 하는 tunneling current mechaism을 이용하는 것이다. 이에 본 연구에서는 MOCVD로 성장된 p-GaN 박막을 Mg의 activation을 증가시키기 위해 N2 분위기에서 4분간 80$0^{\circ}C$에서 RTA로 annealing을 하였으며, ohmic 접촉을 위한 금속으로 높은 재가 function과 좋은 adhesion 그리고 낮은 자체저항을 가지고 있는 Ni/ZSi/Ni/Au를 ohmic metal로 하여 contact한 후에 $700^{\circ}C$에서 1분간 rapid thermal annealing (RTA) 처리를 했다. contact resistance를 계산하기 위해 circular-TLM method를 이용하여 I-V 특성을 조사하였고, interface interaction을 알아보기 위해 SEM과 EDX, 그리고 XRD로 분석하였다. 또한 추가적으로 Si 계열의 compound metal인 PdSi와 PtSi에 대한 I-V 특성도 조사하여 비교하여 보았다.

• Journal of the Korean institute of surface engineering
• /
• v.39 no.3
• /
• pp.110-114
• /
• 2006

In this work, comparative studies on microstructure and mechanical properties between $Mo_2N$ and Mo-Si-N coatings were conducted. Ternary Mo-Si-N coatings were deposited on AISI D2 steel substrates by a hybrid method, where AIP technique was combined with a magnetron sputtering technique. Instrumental analyses of XRD, HRTEM, and XPS revealed that the Mo-Si-N coatings must be a composite consisting of fine $Mo_2N$ crystallites and amorphous $Si_3N_4$. The hardness value of Mo-Si-N coatings significantly increased from 22 GPa of $Mo_2N$ coatings to about 37 GPa with Si content of 10 at.% due to the refinement of $Mo_2N$ crystallites and the composite microstructure characteristics. The average friction coefficient of the Mo-Si-N coatings gradually decreased from 0.65 to 0.4 with increasing Si content up to 15 at.%. The effects of Si content on microstructure and mechanical properties of Mo-N coatings were systematically investigated.

• Journal of Power System Engineering
• /
• v.17 no.4
• /
• pp.109-114
• /
• 2013

In this study, the microstructure, mechanical properties and high temperature oxidation characteristics of HiSiMo and HiSiMoM ductile iron for exhaust manifold were investigated. The HiSiMoM ductile iron was developed by optimization of alloying element addition and casting design. The exhaust manifold prototype was fabricated using the HiSiMoM iron and this resulted in the weight saving of 0.73kg. The microstructures of the HiSiMo and HiSiMoM irons were similar each other and graphite nodularity was 89% and 93% respectively. Tensile strengths of them were 663.5 and 674.4 MPa and Brinell hardness were 235.3 and 243.9 respectively. Both irons showed parabolic weight gain behavior in high temperature oxidation atmosphere. Oxidation layer was divided into external and internal layers. The weight gain of the HiSiMoM iron was lower than that of the HiSiMo iron after isothermal oxidation test at $900^{\circ}C$. This should be rationalized by higher Si enrichment at the interface of the matrix and internal layer of the HiSiMoM iron.

• Journal of the Korean Vacuum Society
• /
• v.10 no.1
• /
• pp.31-36
• /
• 2001

The secondary election emission (SEE) yields for the thermally grown $SiO_2$ thin layers were measured by varying the thickness of the $SiO_2$ layer and the primary current. $SiO_2$ thin layers were thermally grown in a furnace at $930^{\circ}C$, whose thickness varied to be 5.8 nm, 19 nm, 43 nm, 79 nm, 95 nm, and 114 nm. When the $SiO_2$ layers were thinner than 43 nm, it was found that SEE curves followed the universal curve. However, for samples with a $SiO_2$ layer thicker than 79 nm, the SEE curves exhibited two maxima and the values of SEE yields were reduced. Additionally, as the current of primary electrons increased, the SEE yields were reduced. In this experiment, the maximum value of the SEE yield for $SiO_2$ layers was obtained to be 3.35 when the thickness of $SiO_2$ layer was 19 nm, with the primary electron energy 300 eV and the primary electron current 0.97 $\mu\textrm{A}$. The penetration and escape depth of an electron in the $SiO_2$ layers were calculated at the primary electron energy for the maximum value of the SEE yield and from these depths, it was calculated that the thickness of the $SiO_2$layer.

• Current Photovoltaic Research
• /
• v.11 no.4
• /
• pp.114-117
• /
• 2023

Transparent Photovoltaic (PV) modules have recently been in the spotlight because they can be applied to buildings and vehicles. However, crystalline silicon (c-Si) solar modules, which account for about 90% of the PV module market, have the disadvantage of applying transparent PV modules due to their unique opacity. Recently, a see-through type PV module using a crystalline silicon solar strap has been developed. However, there is a problem due to a decrease in aesthetics due to the metal ribbon in the center of the see-through type PV module and difficulty bonding the metal ribbon due to the low voltage output of the strap. In this study, to solve this problem, we developed a fabrication process of series connected c-Si solar strap cells using the c-Si solar cells. We succeeded in fabricating a series connected strap with a width of 2-10 mm, and we plan to manufacture an aesthetic see-through type c-Si PV module.