• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.242-242
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• 2012

From the combined studies of STM and synchrotron photoemission, it has been found that a $CaF_2$ molecule is dissociated to Ca and F atoms on the $Si(114)-2{\times}1$ held at $500^{\circ}C$ at the initial adsorption stage. The Ca atoms form isolated and unique shapes of silicide molecules as shown in Fig. (a), while the F atoms are desorbed from the surface. On the other hand, beyond a $CaF_2$ coverage of 0.3 monolayer, as shown in Fig. (b), in addition to these silicide molecules, a 1-D facet [composed of (113) and (115) faces] adjacent to an etch pit has been observed, and F atoms are also detected from photoemission. These results imply that F atoms act as an etchant on Si(114) and CaF is adsorbed selectively on the (113) face of this facet. From the present studies, it has been concluded that, an insulating $CaF_2$ layer like that on Si(111) cannot be formed on Si(114), but a CaF-decorated nanofacet with a high aspect-ratio can be grown.

• Tribology and Lubricants
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• v.14 no.4
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• pp.114-120
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• 1998

The T-curve, wear and erosion behaviors of two different silicon carbides, i.e., the fine grained SiC and the in situ-toughened SiC(IST-SiC). Both materials exhibited an increasing T-curve behavior, although the T-curve of IST-SiC was steeper than that of fine grained SiC. The fracture toughness of IST-SiC was larger than that of fine grained SiC at long crack regime, whereas an opposite tendency occurred at short crack regime. The rate of material removal during wear and erosion tests was higher in IST-SiC compared to fine grained SiC. The difference between the material removal rates of two materials was discussed in the light of their R-curve behaviors.

• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.114.1-114
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• 2002

• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.114.2-114
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• 2002

• Proceedings of the Materials Research Society of Korea Conference
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• 2002.11a
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• pp.114-114
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• 2002

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.114-114
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• 2003

SiC is promising materials because of its typical properties. So, SiC nanowires and rods were fabricated using various methods. Among theses methods, CVD was a effective method to growth SiC nanowire on the Si for using optical and electrical devices. SiC nanowires were synthesized by CVD using single precursors on Si substrate. To growth SiC nanowire, various metal used to catalyst. Catalyst affects rnicrostructures and growth conditions. Electric and optical properties were varied with kind of catalyst. Difference of these characteristics was due to the reactivity of catalyst and stability of growth process

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.05a
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• pp.114-114
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• 1998

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.114.1-114.1
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• 2010

Fe계 촉매는 FT(Fischer-Tropsch) 합성반응에 매우 유망한 촉매로 주목받고 있으며, $280^{\circ}C$ 미만의 저온 FT 합성반응의 경우, 침전법이 Fe계 촉매의 가장 전형적인 제조방법으로 알려져 있다. Fe계 촉매에 첨가되는 조촉매로는 Cu, K, $SiO_2$ 등이 가장 대표적이며, 이 중에서 특히 구조 조촉매로 첨가되는 $SiO_2$는 Fe계 촉매의 기계적 강도를 향상시킬 뿐만 아니라, 촉매의 성능에도 크게 영향을 미치는 것으로 보고되고 있다. 본 연구에서는 침전법을 이용하여 저온 FT 합성반응용 Fe계 촉매를 제조하였고, 구조 조촉매로 첨가한 $SiO_2$의 원료물질에 따른 Fe계 촉매의 성능변화를 조사하였다. $SiO_2$의 원료물질로는 콜로이드 $SiO_2$와 분말 $SiO_2$를 이용하였으며, 분말 $SiO_2$를 이용한 촉매가 콜로이드 $SiO_2$를 이용한 촉매보다 다소 높은 CO 전환율 및 중질탄화수소 선택도를 나타내는 것을 확인하였다.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2004.11a
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• pp.114-114
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• 2004

• River and Culture
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• v.9 no.3
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• pp.110-114
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• 2013