• Proceedings of the Korean Vacuum Society Conference
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• 2002.02a
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• pp.93-93
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• 2002

• Journal of the Korean institute of surface engineering
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• v.31 no.6
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• pp.345-358
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• 1998

The evolution of surface roughness and morphology in epitaxial Si and $Si_{0.7}Ge{0.3}$ alloys grown by UHV opm-beam sputter deposition onto nominally-singular, [100]-, and [110]-mi-scut Si(001) was investigated by stomic force microscopy and trasmission electron microscopy. The evolution of surface roughness of epitaxial Si films grown at $300^{\circ}C$ is inconsistent with conventional scaling and hyperscaling laws for kineti roughening. Unstable growth leading to the formation of mounds separated by a well-defined length scale is observed on all substrates. Contraty to previous high-temperature growth results, the presence of steps during deposition at $300^{\circ}C$ increases the tendency toward unstable growth resulting in a much earlier development of mound structures and larger surface roughnesses on vicival substrates. Strain-induced surface roughening was found to dominate in $Si_{0.7}Ge{0.3}$ alloys grown on singular Si(001) substrates at $T_S\ge450^{\circ}C$ where the coherent islands are prererentially bounded along <100> directions and eshibt {105} facetting. Increasing the film thickness above critical values for strain relaxation leads to island coalescence and surface smoothening. At very low growth temperatures ($T_s\le 250^{\circ}C$), film surfaces roughen kinetically, due to limited adatom diffusiviry, but at far lower rates than in the higher-temperature strain-induced regime. There is an intermediate growth temperature range, however, over which alloy film surfaces remain extremely smooth even at thicknesses near critical values for strain relaxation.

• Journal of Magnetics
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• v.13 no.4
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• pp.115-119
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• 2008

The authors predicted that $Co_2HfSi$, a $Co_2$-based full Heusler alloy, is being a half-metallic ferromagnet by first-principles calculations using the all electron full-potential linearized augmented plane wave method which adopts the generalized gradient approximation. The integer value of the calculated total magnetic moment of 2.00 ${\mu}_B$ per formula unit and a spin gap of 0.69 eV in spin down state confirmed the half-metallicity of bulk $Co_2HfSi$. For the $Co_2HfSi$(001) surface, we considered two possible surface terminations, namely, Co terminated and HfSi terminated surfaces. It was found that half-metallicity was retained at the HfSi-terminated surface but not at the Co-terminated surface. The magnetic moment of surface Co atoms in the Co-terminated surface was slightly lower than that of Co atoms in deep inner-layers, whereas the magnetic moments of Hf and Si atoms at the HfSi-terminated surface were almost same as those in deep inner-layers.

• Journal of Oral Medicine and Pain
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• v.44 no.1
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• pp.16-24
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• 2019

Purpose: The purpose of this study was to assess the association of personality characteristics with temporomandibular disorders (TMDs). Methods: Four hundred and fifty one college students in Gyeonggi-do completed the revised version of the Minnesota Multiphasic Personality Inventory (MMPI-2) and a questionnaire and collected data were analyzed by IBM SPSS Statistics ver. 25.0 software (IBM Co., Armonk, NY, USA). Results: Mean values of the number of positive answers of TMD symptoms were significantly higher in higher scorers on hypochondriasis (Hs), depression (D), paranoia (Pa) (Hs>60, D>64, Pa>59) (p<0.01). Higher scorers on Hs, hysteria (Hy), schizophrenia (Sc), Pa, psychasthenia (Pt) (Hy>64, Sc>64, Pt>64) exhibited significantly higher mean values of the number of positive answers of contributing factors for TMD (p<0.01, p<0.001). Low scorers on social introversion ($Si{\leq}44$) exhibited significantly lower mean value of the number of positive answers of contributing factors for TMD than high or moderate scorers on Si (Si>64, 45-64) (p<0.01, p<0.05). The percentage of subjects who responded that they had at least one TMD symptom was significantly higher in higher scorers on Hs, Pt, D (p<0.05, p<0.01). The significantly higher percentage of higher scorers on D, Pa reported at least one contributing factor for TMD (p<0.05). The percentage of subjects who responded that they had at least one TMD symptom or one contributing factor for TMD was significantly different among three groups divided by T-score on Si (p<0.01, p<0.05). T-scores of Hs, D, Hy, Pt and Sc showed significant correlation with the numbers of TMD symptoms and contributing factors for TMD, respectively (p<0.001). A correlation was found between T-score of Pd and the number of TMD symptoms (p<0.001). T-score of Si correlated to the number of contributing factors for TMD (p<0.001). Conclusions: Most clinical scales of MMPI-2 were found to be related to TMD. Psychological assessment including MMPI-2 may play a role in predicting treatment outcome and planning treatment of TMD.

• Journal of the Korean Ceramic Society
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• v.37 no.10
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• pp.1008-1013
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• 2000

SrTi $O_3$(001) 단결정 기판 위에 졸-겔 스핀코팅으로 $SrBi_2(Ta,Nb)_2O_9$ 박막을 도포하고 그 결정화 과정을 고온 X-선 회절분석 (HTXRD)으로 추적하면서 Pt(111)/Ti/ $SiO_2$/Si 위에 성장한 박막과 비교하였다. SrTi $O_3$(001) 단결정 기판 위에 도포된 $SrBi_2Nb_2O_{9}$ 박막은 fluorite-like phase와 같은 transient phase를 거치지 않고 곧바로 순수한 $SrBi_2Nb_2O_9$ 상으로 결정화가 시작되었으며 결정화가 시작되는 온도인 ${\sim}540^{\circ}C$부터 c축 배향성장하였다. 또한 $SrB i_2(Ta,Nb)_2O_9$ 박막은 Ta/Nb 비에 관계없이 $SrTiO_3$(001) 위에서 모두 $(00{\ell})$로 배향되었으며, 코팅 횟수가 늘어나 필름의 두께가 증가함에 따라 c축 배향성은 미세한 감소를 보였다. $SrBi_2Nb_2O_9/SrTiO_3$단면을 TEM으로 관찰한 결과 $SrBi_2Nb_2O_9$은 대체로 불규칙한 크기의 다결정체로 되어 있었으나 계면 부근에서는 [001]$_{SBN}$//[001]$_{SrTi}$ $O_3$/, [100]$_{SBN}$//[100]$_{SrTi}$ $O_3$/라는 결정학적 관계를 가지며 에피탁샬 성장했음을 알 수 있었다.있었다.

• Journal of Microbiology and Biotechnology
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• v.31 no.7
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• pp.942-948
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• 2021

Canine influenza virus (CIV) induces acute respiratory disease in dogs. In this study, we aimed to determine the signaling pathways leading to the induction of IFN-β in a canine respiratory epithelial cell line (KU-CBE) infected with the H3N2 subtype of CIV. Small interfering RNAs (siRNAs) specific to pattern recognition receptors (PRRs) and transcription factors were used to block the IFN-β induction signals in H3N2 CIV-infected KU-CBE cells. Among the PRRs, only the TLR3 and RIG-I expression levels significantly (p < 0.001) increased in CIV-infected cells. Following transfection with siRNA specific to TLR3 (siTLR3) or RIG-I (siRIG-I), the mRNA expression levels of IFN-β significantly (p < 0.001) decreased, and the protein expression of IFN-β also decreased in infected cells. In addition, co-transfection with both siTLR3 and siRIG-I significantly reduced IRF3 (p < 0.001) and IFN-β (p < 0.001) mRNA levels. Moreover, the protein concentration of IFN-β was significantly (p < 0.01) lower in cells co-transfected with both siTLR3 and siRIG-I than in cells transfected with either siTLR3 or siRIG-I alone. Also, the antiviral protein MX1 was only expressed in KU-CBE cells infected with CIV or treated with IFN-β or IFN-α. Thus, we speculate that IFN-β further induces MX1 expression, which might suppress CIV replication. Taken together, these data indicate that TLR3 and RIG-I synergistically induce IFN-β expression via the activation of IRF3, and the produced IFN-β further induces the production of MX1, which would suppress CIV replication in CIV-infected cells.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.463-463
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• 2013

This paper reports the synthesis and characterization of ZnO:Ga nano-structures deposited on Au/SiNx/Si(001) by radio-frequency sputtering. The effect of the temperature on the microstructure of the as-grown ZnO:Ga thin films was examined. The growth mode of ZnO:Ga nano-structures can be explained by the profile coating, i.e. the ZnO nano-structures were formed with a morphological replica of Au seeds. Initially, the ZnO:Ga nano-structures were overgrown on top of Au nano-crystals. Small ZnO:Ga nano-dots were then nucleated on hexagonal ZnO:Ga discs.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.360-360
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• 2010

Very initial stage of oxidation process of Si (001) surface was investigated using large scale molecular dynamics simulation. Reactive force field potential was used for the simulation owing to its ability to handle charge variation associated with the oxidation reaction. To know the detail mechanism of both adsorption and desorption of water molecule (for simulating wet oxidation), oxygen molecule (for dry oxidation) and their atom constituents, interaction of one molecule with Si surface was carefully observed. The simulation is then continued with many water and oxygen molecules to understand the kinetics of oxide growth. The results show that possibilities of desorption and adsorption depend strongly on initial atomic configuration as well as temperature. We observed a tendency that H atoms come relatively into deeper surface or otherwise quickly desorbed away from the silicon surface. On the other hand, most oxygen atoms are bonded with first layer of silicon surface. We also noticed that charge transfer is only occur in nearest neighbor regime which has been pointed out by DFT calculation. Atomic structure of the interface between the oxide and Si substrate was characterized in atomic scale.

• Proceedings of the Korean Magnestics Society Conference
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• 2004.06a
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• pp.86-87
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• 2004

• Proceedings of the Korean Vacuum Society Conference
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• 2009.02a
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• pp.229.1-229.1
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• 2009