• Proceedings of the Korean Vacuum Society Conference
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• 2006.08a
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• pp.95-95
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• 2006

• Proceedings of the Korean Vacuum Society Conference
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• 2004.02a
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• pp.170-170
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• 2004

• Proceedings of the Korean Magnestics Society Conference
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• 2001.10a
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• pp.104-105
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• 2001

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.156-157
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• 1998

It is a diffcult and challenging pproblem to control the growth of eppitaxial films. Heteroeppitaxy is esppecially idfficult because of the lattice mismatch between sub-strate and depposited layers. This mismatch leads usually to a three dimensional(3D) island growth. But the use of surfactants such as As, Sb, and Bi can be beneficial in obtaining high quality heteroeppitaxial films. In this study medium energy ion scattering sppectroscoppy(MEIS) was used in order to reveal the growth mode of Ge on Si(001) and the strain of depposited film without and with dynamically supplied atomic hydrogen at the growth thempperature of 35$0^{\circ}C$. It was ppossible to control the growth mode from layer-by-layer followed by 3D island to layer-by-layer by controlling the hydrogen flux. In the absent of hydro-gen the film grows in the layer-by-layer mode within the critical thickness(about 3ML) and the 3D island formation is followed(Fig1). The 3D island formation is suppressed by introducing hydrogen resulting in layer-by-layer growth beyond the critical thickness(Fig2) We measured angular shift of blocking dipp in order to obtain the structural information on the thin films. In the ppressence of atomic hydrogen the blocking 야 is shifted toward higher scattering angle about 1。. That means the film is distorted tetragonally and strained therefore(Fig4) In other case the shift of blocking dipp at 3ML is almost same as pprevious case. But above the critical thickness the pposition of blocking dipp is similar to that of Si bulk(Fig3). It means the films is relaxed from the first layer. There is 4.2% lattice mismatch between Ge and Si. That mismatch results in about 2。 shift of blocking dipp. We measured about 1。 shift. This fact could be due to the intermixing of Ge and Si. This expperimental results are consistent with Vegard's law which says that the lattice constant of alloys is linear combination of the lattic constants of the ppure materials.

• Transactions on Electrical and Electronic Materials
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• v.2 no.2
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• pp.26-31
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• 2001

This paper presents the electrochemical etch-stop characteristics of single-crystal Si(001) wafers in tetramethyl ammonium hydroxide(TMAH):isopropyl alcohol(IPA):pyrazine solutions. The addition of pyrazine to TMAH:IPA solutions increased the etch rate of (100) Si, thus the etching time required by the etch-stop process shortened. The current-voltage(I-V) characteristics of n- and p-type Si in TMAH:IPA:pyrazine solutions were obtained, respectively. Open circuit potential(OCP) and passivation potential(PP) of n- and p-type Si, respectively, were obtained and applied potential was selected between n- and p-type Si PPs. The electrochemical etch-stop method was used to fabricate 801 microdiaphragms of 20 ${\mu}{\textrm}{m}$ thickness on a 5-inch Si wafer. The average thickness of fabricated 801 microdiaphragms on one Si wafer was 20.03 ${\mu}{\textrm}{m}$ and the standard deviation was $\pm$0.26 ${\mu}{\textrm}{m}$. The Si surface of the etch-stopped microdiaphragm was extremely flat with no noticeable taper or nonuniformity.

• Advances in nano research
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• v.5 no.3
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• pp.261-279
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• 2017

Spectroscopic investigation of Si quantum dots (Si-QDs) embedded in silicon nitride was performed over a broad stoichiometry range to optimize light emission. Plasma-enhanced chemical vapor deposition was used to grow the $SiN_x$ films on Si (001) substrates. The film composition was controlled via the flow ratio of silane ($SiH_4$) and ammonia ($NH_3$) in the range of R = 0.45-1.0 allowed to vary the Si excess in the range of 21-62 at.%. The films were submitted to annealing at $1100^{\circ}C$ for 30 min in nitrogen to form the Si-QDs. The properties of as-deposited and annealed films were investigated using spectroscopic ellipsometry, Fourier transform infrared spectroscopy, Raman scattering and photoluminescence (PL) methods. Si-QDs were detected in $SiN_x$ films demonstrating the increase of sizes with Si excess. The residual amorphous Si clusters were found to be present in the films grown with Si excess higher than 50 at.%. Multi-component PL spectra at 300 K in the range of 1.5-3.5 eV were detected and nonmonotonous varying total PL peak versus Si excess was revealed. To identify the different PL components, the temperature dependence of PL spectra was investigated in the range of 20-300 K. The analysis allowed concluding that the "blue-orange" emission is due to the radiative defects in a $SiN_x$ matrix, whereas the "red" and "infrared" PL bands are caused by the exciton recombination in crystalline Si-QDs and amorphous Si clusters. The nature of radiative and no radiative defects in $SiN_x$ films is discussed. The ways to control the dominant PL emission mechanisms are proposed.

• Nuclear Engineering and Technology
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• v.48 no.4
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• pp.1009-1014
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• 2016

SiC-based ceramic composites are currently being considered for use in fuel cladding tubes in light-water reactors. The joining of SiC ceramics in a hermetic seal is required for the development of ceramic-based fuel cladding tubes. In this study, SiC monoliths were diffusion bonded using a Ti foil interlayer and additional Si powder. In the joining process, a very low uniaxial pressure of ~0.1 MPa was applied, so the process is applicable for joining thin-walled long tubes. The joining strength depended strongly on the type of SiC material. Reaction-bonded SiC (RB-SiC) showed a higher joining strength than sintered SiC because the diffusion reaction of Si was promoted in the former. The joining strength of sintered SiC was increased by the addition of Si at the Ti interlayer to play the role of the free Si in RB-SiC. The maximum joint strength obtained under torsional stress was ~100 MPa. The joint interface consisted of $TiSi_2$, $Ti_3SiC_2$, and SiC phases formed by a diffusion reaction of Ti and Si.

• Journal of Korean Neurosurgical Society
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• v.49 no.1
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• pp.26-30
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• 2011

Objective: The primary objective of this study was to perform a retrospective evaluation of the radiological and pathological features influencing the formation of peritumoral brain edema (PTBE) in meningiomas. Methods: The magnetic resonance imaging (MRI) and pathology data for 86 patients with meningiomas, who underwent surgery at our institution between September 2003 and March 2009, were examined. We evaluated predictive factors related to peritumoral edema including gender, tumor volume, shape of tumor margin, presence of arachnoid plane, the signal intensity (SI) of the tumor in T2-weighted image (T2WI), the WHO histological classification (GI, GII/GIII) and the Ki-67 antigen labeling index (LI). The edema-tumor volume ratio was calculated as the edema index (EI) and was used to evaluate peritumoral edema. Results: Gender (p=0.809) and pathological finding (p=0.084) were not statistically significantly associated with peritumoral edema by univariate analysis. Tumor volume was not correlated with the volume of peritumoral edema. By univariate analysis, three radiological features, and one pathological finding, were associated with PTBE of statistical significance: shape of tumor margin (p=0.001), presence of arachnoid plane (p=0.001), high SI of tumor in T2WI (p=0.001), and Ki-67 antigen LI (p=0.049). These results suggest that irregular tumor margins, hyperintensity in T2WI, absence of arachnoid plane on the MRI, and high Ki-67 LI can be important predictive factors that influence the formation of peritumoral edema in meningiomas. By multivariate analysis, only SI of the tumor in T2WI was statistically significantly associated with peritumoral edema. Conclusion: Results of this study indicate that irregular tumor margin, hyperintensity in T2WI, absence of arachnoid plane on the MRI, and high Ki-67 LI may be important predictive factors influencing the formation of peritumoral edema in meningiomas.

• Proceedings of the Korean Vacuum Society Conference
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• 2001.02a
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• pp.101-101
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• 2001

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.239-239
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• 2005