• Korean Journal of Materials Research
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• v.8 no.10
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• pp.890-897
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• 1998

The direct wafer bonding between n-InP(001) wafer and the ${Si}_3N_4$(200 nm) film grown on the InP wafer by PECVD method was investigated. The surface states of InP wafer and ${Si}_3N_4$/InP which strongly depend upon the direct wafer bonding strength between them when they are brought into contact, were characterized by the contact angle measurement technique and atomic force microscopy. When InP wafer was etched by $50{\%}$ HF, contact angle was $5^{\circ}$ and RMS roughness was $1.54{\AA}$. When ${Si}_3N_4$ was etched by ammonia solution, RMS roughness was $3.11{\AA}$. The considerable amount of initial bonding strength between InP wafer and ${Si}_3N_4$/InP was observed when the two wafer was contacted after the etching process by $50{\%}$ HF and ammonia solution respectively. The bonded specimen was heat treated in $H^2$ or $N^2$, ambient at the temperature of $580^{\circ}C$-$680^{\circ}C$ for lhr. The bonding state was confirmed by SAT(Scannig Acoustic Tomography). The bonding strength was measured by shear force measurement of ${Si}_3N_4$/InP to InP wafer increased up to the same level of PECVD interface. The direct wafer bonding interface and ${Si}_3N_4$/InP PECVD interface were chracterized by TEM and AES.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.271-271
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• 2013

The defect states of a Ar-sputtered SiO2 surface on Si (001) were investigated using Auger electron spectroscopy (AES) and reflection electron energy loss spectroscopy (REELS). The REELS spectra at the primary electron energy of 500 eV showedthat three peaks at 2.5, 5.1, and 7.2 eV were found within the band gap after sputtering. These peaks do not appear at the primary electron energies of 1,000 and 1,500 eV, which means that the defect states are located at the extreme surface of a SiO2/Si thin film. According to the calculations, two peaks at 7.2 and 5.1 eV are related to neutral oxygen vacancies. However, the third peak at 2.5 eV has never been previously reported and the theories proposed that this defect state may be due to Si-Si bonding. Our Auger data showed that a peak for Si-Si bonding at 89 eV appears after Ar ion sputtering on the surface of the sample, which is consistent with the theoretical models.

• Journal of Sensor Science and Technology
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• v.14 no.2
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• pp.131-135
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• 2005

This paper describes the ohmic contact formation of single crystalline 3C-SiC thin films heteroepitaxially grown on Si(001) wafers. In this work, a TiW (Titanium-tungsten) film as a contact matieral was deposited by RF magnetron sputter and annealed with the vacuum and RTA (rapid thermal anneal) process respectively. Contact resistivities between the TiW film and the n-type 3C-SiC substrate were measured by the C-TLM (circular transmission line model) method. The contact phases and interface the TiW/3C-SiC were evaulated with XRD (X-ray diffraction), SEM (scanning electron microscope) and AES (Auger electron spectroscopy) depth-profiles, respectively. The TiW film annealed at $1000^{\circ}C$ for 45 sec with the RTA play am important role in formation of ohmic contact with the 3C-SiC substrate and the contact resistance is less than $4.62{\times}10^{-4}{\Omega}{\cdot}cm^{2}$. Moreover, the inter-diffusion at TiW/3C-SiC interface was not generated during before and after annealing, and kept stable state. Therefore, the ohmic contact formation technology of single crystalline 3C-SiC using the TiW film is very suitable for high temperature MEMS applications.

• Journal of the korean academy of Pediatric Dentistry
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• v.34 no.2
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• pp.273-284
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• 2007

The aim of this study was to evaluate the resistance to degradation and to compare the wear resistance characteristics of four esthetic restorative materials in an alkaline solution(0.1N NaOH). The composite resins studied were Composan LCM flow(Promedica, Germany). Clearfil ST(Kuraray medical, Japan), Durafi VS1(Heraeus Kulzer, U.S.A), Point 4(Kerr, U.S.A). The results were as follows : 1. The mass loss of each brand was $1.02{\sim}6.04%$ and highest value in Durafil VS$(6.04{\pm}0.29%)$. 2. The sequence of the degree of degradation layer depth was in descending order by Durafil VS, Clearfil ST, Point 4 and Composan LCM flow. There were significant differences between Point 4, Composan LCM flow and the others (p<0.001). 3. The sequence of the Si loss was in descending order by Clearfil ST, Durafil VS, Composan LCM flow and Point 4. There were significant differences among the materials (p<0.001). 4. On SEM, destruction of bonding between matrix and filler and on CLSM, the depth of degradation layer of specimen surface was observed. 5. The sequence of maximum wear depth was in descending order by Durafil VS, Composan LCM flow, Point 4 and Clearfil ST. There were no significant differences among the materials (p>0.001) 6. The correlation coefficient between Si loss and degradation layer depth (r=0.892, p<0.01) and Si loss and mass loss(r=0.736, p<0.01) were relatively high. These results indicate that hydrolytic degradation, wear and another factor may consider as evaluation factors of composite resins.

• Nuclear Engineering and Technology
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• v.44 no.8
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• pp.971-976
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• 2012

Silica-coated Au with Ag, Co, Cu, and Ir bimetallic radioisotope nanoparticles were synthesized by neutron irradiation, after coating $SiO_2$ onto the bimetallic particles by the sol-gel St$\ddot{o}$ber process. Bimetallic nanoparticles were synthesized by irradiating aqueous bimetallic ions at room temperature. Their shell and core diameters were recorded by TEM to be 100 - 112 nm and 20 - 50 nm, respectively. The bimetallic radioisotope nanoparticles' gamma spectra showed that they each contained two gamma-emitting nuclides. The nanoparticles could be used as radiotracers in petrochemical and refinery processes that involve temperatures that would decompose conventional organic radioactive labels.

• Korean Journal of Materials Research
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• v.6 no.10
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• pp.1017-1024
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• 1996

본 연구에서는 여러 기판에 대한 Cu의 확산정도를 알기 위하여 Ta, Nb, Co/Ta이중층 및 Co/Nb 이중층 위에 기화법으로 증착하고 열처리를 실시하였다. 열처리한 Ta막은 열처리하지 않은 Ta막보다 Cu 확산방지막으로서의 성능이 더 떨어지는데, 이것은 열처리에 의하여 Ta막이 결정화되기 때문이다. Cu/Co/Ta/(001)Si 구조에서의 구리 실리사이드 생성온도는 Cu/Co/Ta(001)Si 구조에서의 그것보다 더 높다. 한편, nb의 Cu에 대한 barrier 특성은 Ta와 비슷한 수준이다. 또한 Cu막 도포 이전에 Pd+HF활성화 전처리나 N2플라즈마 전처리를 실시하면, Cu의 핵생성뿐만 아니라 기판에 대한 Cu막의 접착성도 향상된다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.150-150
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• 2003

wide bind gap과 wurtzite hexagonal structure를 가지고 있으며 청색 발광 및 청자색 레이저 특성을 보이는 III-V족 화합물반도체 GaN는 laser diodes (LD) 및 light emitting diodes (LED) 재료로 주목받고있는 주요 전자재료이다. 본 연구에서는 GaN를 chemical vapor deposition (CVD) 법을 이용하여 vapor-liquid-solid (VLS) mechanisum에 의하여 GaN나노와이어 형태로 성장시켰다. 기판은 (001)Si을 사용하였고 suputtering을 이용하여 GaN와 AlN의 double buffer layer (DBL)를 증착시켰으며 촉매로는 Ni을 사용하였다. 또한, 원료로는 고순도 Ga금속과 NH$_3$ gas를, carrier gas로는 Ar을 사용하여 GaN/AlN/(001)Si 위에 GaN 나노와이어를 성장시켰다. 성장된 GaN 나노와이어는 DBL의 두께, Ga source의 양, 튜브 안의 압력, 튜브 안의 위치 등의 제 공정변수에 따라 tangled, straight 등의 다양한 형상을 보였으며 지름은 약 30~100 nm, 길이는 수 $\mu\textrm{m}$로 관찰되었다. GaN나노와이어의 결정성, 형상 및 발광특성 등을 x-ray diffraction (XRD), photoluminesence (PL), scanning electron microscope (SEM), transmision electron microscope (TEM) 등을 이용하여 측정하였으며 제 공정변수와의 상관관계를 규명하였다.

• Journal of the Korean Vacuum Society
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• v.6 no.3
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• pp.177-180
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• 1997

Low Energy Electron Diffraction (LEED) apparatus was made to confirm the surface structure and to determine the direction of the structure for the Angle Resolved Ultraviolet Photoemission Spectroscopy(ARUPS) study. To determine the parameters needed for the design of the apparatus, computer simulation was used. Our LEED has 3 grids. The distance between sample and sccreen is 75 mm, and the viewing angle is $80^{\circ}$. The LEED apparatus was tested by investigating the Si(001) and $Al_2O_3$(0001) surface.

• Journal of Magnetics
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• v.3 no.4
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• pp.120-122
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• 1998

The higher order harmonic components of magnetostriction during ac magnetization in 3% SiFe are measured as a function of the magnetizing angle respect to [001] axis using a constructed laser interferometry. The magnetostriction with magnetizing angle from [001] axis agrees ith the calculation based on domain reorientation. The relative amplitudes of odd and even harmonics respectively for magnetic induction and magnetostriction decrease with the order of harmonics, accompanying the contraction of the amplitudes. The contraction of harmonics order of magnetostriction harmonics is shown to be the even number times of that of magnetic induction.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.15 no.4
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• pp.57-61
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• 2001

The {111}<112> deformation torture, which originated from the {110}<00l> texture near the surface of hot bands, is not prerequisite for the recrystallized {110}<001> Goss texture. During final annealing, surface-energy-induced selective growth of grains urn at the strip surface of 3%Si-Fe alloys containing 6ppm bulk content of sulfur. With decreasing final reduction, the probability that Goss grains survive under the highly segregated sulfur atmosphere and have a chance for later surface-energy-induced selective growth becomes higher, resulting in high magnetic induction.