• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.4
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• pp.145-150
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• 2014

GaN nanorods were grown on the apex of GaN stripes by three dimensional selective growth method. $SiO_2$ mask was partially removed only on the apex area of the GaN stripes by an optimized photolithography for the selective growth. Metallic Au was deposited only on the apex of the GaN stripes and a selective growth of GaN nanorods was followed by a metal organic vapor phase epitaxy (MOVPE). We confirmed that the shape and size of the GaN nanorods depend on growth temperature and flow rates of group III precursor. GaN nanorods were grown having a taper shape which have sharp tip and triangle-shaped cross section. From the TEM result, we confirmed that threading dislocations were rarely observed in GaN nanorods because of the very small contact area for the selective growth. Stacking faults which might be originated from a difference of the crystal facet directions between the GaN stripe and the GaN nanorods were observed in the center area of the GaN nanorods.

• KSTLE International Journal
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• v.6 no.1
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• pp.13-16
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• 2005

Friction characteristics at nano-scale of self-assembled monolayers (SAMs) having different chain lengths and end groups were experimentally studied.51 order to understand the effect of the chain length and end group on the nano-scalefriction: (1) two different SAMs of shorter chain lengths with different end groups such as methyl and phenyl groups, and (2)four different kinds of SAMs having long chain lengths (C10) with end groups of fluorine and hydrogen were coated on siliconwafer (100) by dipping method and Chemical Vapour Deposition (CVD) technique. Their nano-scale friction was measuredusing an Atomic Force Microscopy (AFM) in the range of 0-40 nN normal loads. Measurements were conducted at the scanning speed of 2 $mu$m/s for the scan size of 1$mu$m x 1 $mu$m using a contact mode type $Si_3N_4$ tip (NPS 20) that had a nominal spring constant0.58 N/m. All experiments were conducted at anlbient temperature (24 $pm$1$circ$C) and relative humidity (45 $pm$ 5%). Results showedthat the friction force increased with applied normal load for all samples, and that the silicon wafer exhibited highest frictionwhen compared to SAMs. While friction was affected by the inherent adhesion in silicon wafer, it was influenced by the chainlength and end group in the SAMs. It was observed that the nano-friction decreased with the chain length in SAMs. In the caseof monolayers with shorter length, the one with the phenyl group exhibited higher friction owing to the presence of benBenerings that are stiffer in nature. In the case of SAMs with longer chain length, those with fluorine showed friction values relativelyhigher than those of hydrogen. The increase in friction due to the presence of fluorine group has been discussed with respect tothe siBe of the fluorine atom.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.139-141
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• 2005

It is possble to study charge transfer property which is caused by height variation because we can see the organic materials barrier height and STM tip by organic materials energy band gap. Here, we investigated the negative differential resistance(NDR) and charge transfer property of self-assembled 4,4-Di(ethynylphenyl)-2'-nitro-1-(thioacetyl)benzene, which has been well known as a conducting molecule. Self-assembly monolayers(SAMs) were prepared on Au(111), which had been thermally deposited onto pre-treatment($H_{2}SO_{4}:H_{2}O_{2}$=3:1) Si. The Au substrate was exposed to a 1 mM/l solution of 1-dodecanethiol in ethanol for 24 hours to form a monolayer. After thorough rinsing the sample, it was exposed to a $0.1{\mu}M/1$ solution of 4,4-Di(ethynylphenyl)-2'-nitro-1-(thioacetyl)benzene in dimethylformamide(DMF) for 30 min and kept in the dark during immersion to avoid photo-oxidation. After the assembly, the samples were removed from the solutions, rinsed thoroughly with methanol, acetone, and $CH_{2}Cl_{2}$, and finally blown dry with $N_2$. Under these conditions, we measured electrical properties of self-assembly monolayers(SAMs) using ultra high vacuum scanning tunneling microscopy(UHV-STM). The applied voltages were from -1.50 V to -1.20 V with 298 K temperature. The vacuum condition is $6{\times}10^{-8}$ Torr. As a result, we found that NDR and charge transfer property by a little change of height when the voltage is applied between STM tip and electrode.

• Korean Journal of Ichthyology
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• v.33 no.3
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• pp.167-176
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• 2021

This study was carried out to clarify the egg, larvae and juveniles development of Abbottina springeri. For the experiments, the matured adults were collected at the Seowon-cheon, Dangjin-si, Chungcheongnam-do, in Korea. The amount of spawning of female A. springeri was about 1,225~2,100 (1,662±437, n=10). The fertilized eggs were circular in shape and 1.05~1.13 (1.08±0.02, n=30) mm in diameter. The hatching time was required 72 hours to 80 hours after fertilization under water temperature of 22℃. The newly hatched larvae were 2.10~2.23 (2.16±0.04, n=10) mm in total length and had egg yolk in the abdomen but the mouth was not opened. At 5 days after hatching, the preflexion larvae were 3.19~3.30 (3.24±0.03, n=10) mm in total length and the most of yolk-sac was absorbed. At the 15 days after hatching, the flexion larvae were 4.97~5.30 (5.13±0.12, n=10) mm in total length and the tip of the caudal fin was began to bend upward. At the 25 days after hatching, the postflexion larvae were 8.97~9.60 (9.44±0.16, n=10) mm in total length and the tip of the caudal fin was bent at 45°. At the 35 days after hatching, the juvenile were 12.0~13.5 (12.7±0.53, n=10) mm in total length and all fin-rays (iii7 dorsal fin, iii6 anal fin, i7 ventral fins) were reached a constant number of each part.