• Title/Summary/Keyword: Short-circuit current

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Capacity assessment of existing corroded overhead power line structures subjected to synoptic winds

  • Niu, Huawei;Li, Xuan;Zhang, Wei
    • Wind and Structures
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    • v.27 no.5
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    • pp.325-336
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    • 2018
  • The physical infrastructure of the power systems, including the high-voltage transmission towers and lines as well as the poles and wires for power distribution at a lower voltage level, is critical for the resilience of the community since the failures or nonfunctioning of these structures could introduce large area power outages under the extreme weather events. In the current engineering practices, single circuit lattice steel towers linked by transmission lines are widely used to form power transmission systems. After years of service and continues interactions with natural and built environment, progressive damages accumulate at various structural details and could gradually change the structural performance. This study is to evaluate the typical existing transmission tower-line system subjected to synoptic winds (atmospheric boundary layer winds). Effects from the possible corrosion penetration on the structural members of the transmission towers and the aerodynamic damping force on the conductors are evaluated. However, corrosion in connections is not included. Meanwhile, corrosion on the structural members is assumed to be evenly distributed. Wind loads are calculated based on the codes used for synoptic winds and the wind tunnel experiments were carried out to obtain the drag coefficients for different panels of the transmission towers as well as for the transmission lines. Sensitivity analysis is carried out based upon the incremental dynamic analysis (IDA) to evaluate the structural capacity of the transmission tower-line system for different corrosion and loading conditions. Meanwhile, extreme value analysis is also performed to further estimate the short-term extreme response of the transmission tower-line system.

A Brief Investigation on the Performance Variation and Shelf Lifetime in Polymer:Nonfullerene Solar Cells

  • Lee, Sooyong;Kim, Hwajeong;Lee, Chulyeon;Kim, Youngkyoo
    • Current Photovoltaic Research
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    • v.7 no.3
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    • pp.55-60
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    • 2019
  • Polymer:nonfullerene solar cells with an inverted-type device structure were fabricated by employing the bulk heterojunction (BHJ) active layers, which are composed of poly[(2,6-(4,8-bis(5-(2-ethylhexyl)thiophene-2-yl)-benzo[1,2-b:4,5-b']dithiophene))-alt-(5,5-(1',3'-di-2-thienyl-5',7-bis(2-ethylhexyl)benzo[1',2'-c:4',5'-c']dithiophene-4,8-dione))] (PBDB-T) and 3,9-bis(6-methyl-2-methylene-(3-(1,1-dicyanomethylene)-indanone))-5,5,11,11-tetrakis(4-hexylphenyl)-dithieno[2,3-d:2',3-d']-s-indaceno[1,2-b:5,6-b']dithiophene (IT-M). The BHJ layers were formed on a pre-patterned indium-tin oxide (ITO)-coated glass substrate by spin-coating using the blend solutions of PBDB-T and IT-M. The solar cell performances were investigated with respect to the cell position on the ITO-glass substrates. In addition, the short-term shelf lifetime of solar cells was tested by storing the PBDB-T:IT-M solar cells in a glovebox filled with inert gas. The results showed that the performance of solar cells was relatively higher for the cells close to the center of substrates, which was maintained even after storage for 24 h. In particular, the PCE of PBDB-T:IT-M solar cells was marginally decreased after storage for 24 h owing to the slightly reduced fill factor, even though the open circuit voltage was unchanged after 24 h.

A Study on the Characteristics of Dye-Sensitized Solar Cell Using Nb2O5 Semiconductor Oxides (Nb2O5 반도체 산화물을 이용한 염료 감응 태양전지 특성 연구)

  • Kim, Haemaro;Lee, Don-Kyu
    • Journal of IKEEE
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    • v.23 no.1
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    • pp.330-333
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    • 2019
  • Various studies on dye-sensitized solar cells, which are cheaper to manufacture and have superior stability than silicon solar cells, are continuously conducted. In this study, the properties of dye-sensitized solar cells were studied using semiconductor oxides made by mixing $TiO_2$ and $Nb_2O_5$. By adding $Nb_2O_5$ in different proportions, the solar cell was made, and the surface area and electrical characteristics of this cell were measured. As $Nb_2O_5$ was added, the contact area of dye and electrolyte increased and the short-circuit current, open voltage, fill factor and conversion efficiency of dye-sensitized solar cells were confirmed to be improved.

Light-emitting Diodes based on a Densely Packed QD Film Deposited by the Langmuir-Blodgett Technique (랭뮤어-블롯젯을 통해 형성된 고밀도 양자점 박막과 이를 기반으로 한 발광다이오드)

  • Rhee, Seunghyun;Jeong, Byeong Guk;Roh, Jeongkyun
    • Journal of Sensor Science and Technology
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    • v.31 no.4
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    • pp.249-254
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    • 2022
  • To achieve high-performance colloidal quantum dot light-emitting diodes (QD-LEDs), the use of a densely packed QD film is crucial to prevent the formation of leakage current pathways and increase in interface resistance. Spin coating is the most common method to deposit QDs; however, this method often produces pinholes that can act as short-circuit paths within devices. Since state-of-the-art QD-LEDs typically employ mono- or bi-layer QDs as an emissive layer because of their low conductivities, the use of a densely packed and pinhole-free QD film is essential. Herein, we introduce the Langmuir-Blodgett (LB) technique as a deposition method for the fabricate densely packed QD films in QD-LEDs. The LB technique successfully transfers a highly dense monolayer of QDs onto the substrate, and multilayer deposition is performed by repeating the transfer process. To validate the comparability of the LB technique with the standard QD-LED fabrication process, we fabricate and compare the performance of LB-based QD-LEDs to that of the spin-coating-based device. Owing to the non-destructiveness of the LB technique, the electroluminescence efficiency of the LB-based QD-LEDs is similar to that of the standard spin coating-based device. Thus, the LB technique is promising for use in optoelectronic applications.

Estimation of Motor Deterioration using Pulse Signal and Insulation Resistance Measurement Algorithm (펄스 신호 및 절연저항 측정 알고리즘을 이용한 전동기 열화 추정)

  • Jeong, Sungin
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.22 no.5
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    • pp.111-116
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    • 2022
  • The causes of motor burnout include overload, phase loss, restraint, interlayer short circuit, winding ground fault, instantaneous overvoltage, and the rotor contacting the stator, leading to insulation breakdown, leading to breakdown or electrical accidents. Therefore, equipment failure causes not only loss due to cost required for equipment maintenance/repair, but also huge economic loss due to productivity decrease due to process stop because the process itself including the motor is stopped. The current level of technology for diagnosing motor failures uses vibration, heat, and power analysis methods, but there is a limit to analyzing the problems only after a considerable amount of time has passed according to the failure. Therefore, in this paper, a device and algorithm for measuring insulation resistance using DC AMP signal was applied to an industrial motor to solve this problem. And by following the insulation resistance state value, we propose a diagnosis of deterioration and failure of the motor that cannot be solved by the existing method.

Characteristics of Tin Oxide Thin Film Grown by Atomic Layer Deposition and Spin Coating Process as Electron Transport Layer for Perovskite Solar Cells (원자층 증착법과 용액 공정법으로 성장한 전자 수송층 산화주석 박막의 페로브스카이트 태양전지 특성)

  • Ki Hyun Kim;Sung Jin Chung;Tae Youl Yang;Jong Chul Lim;Hyo Sik Chang
    • Korean Journal of Materials Research
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    • v.33 no.11
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    • pp.475-481
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    • 2023
  • Recently, the electron transport layer (ETL) has become one of the key components for high-performance perovskite solar cell (PSC). This study is motivated by the nonreproducible performance of ETL made of spin coated SnO2 applied to a PSC. We made a comparative study between tin oxide deposited by atomic layer deposition (ALD) or spin coating to be used as an ETL in N-I-P PSC. 15 nm-thick Tin oxide thin films were deposited by ALD using tetrakisdimethylanmiotin (TDMASn) and using reactant ozone at 120 ℃. PSC using ALD SnO2 as ETL showed a maximum efficiency of 18.97 %, and PSC using spin coated SnO2 showed a maximum efficiency of 18.46 %. This is because the short circuit current (Jsc) of PSC using the ALD SnO2 layer was 0.75 mA/cm2 higher than that of the spin coated SnO2. This result can be attributed to the fact that the electron transfer distance from the perovskite is constant due to the thickness uniformity of ALD SnO2. Therefore ALD SnO2 is a candidate as a ETL for use in PSC vacuum deposition.

Development of Microwave Water Surface Current Meter for General Use to Increase Efficiency of Measurements of River Discharges (하천유량측정의 효율성 향상을 위한 범용 전자파표면유속계 개발)

  • Kim, Youngsung;Noh, Joonwoo;Choi, Kwangsoon
    • Korean Journal of Ecology and Environment
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    • v.47 no.3
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    • pp.225-231
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    • 2014
  • Discharge measurement during flood season is very difficult. Microwave water surface current meter (MWSCM) can measures river surface velocities easily without contacting water. This study introduces its improved version, MWSCM for general use. The existing version of MWSCM is for floods so that its applicable period in a year is short. It has been improved to extend its applicability in a year. The range of measurable velocity for MWSCM for general use is extended so it can be applied during normal flows as well as high flows. MWSCM for general use can measure the velocity range of $0.03{\sim}20.0ms^{-1}$, whereas MWSCM for floods can measure the velocity range of $0.5{\sim}10.0ms^{-1}$. To make such innovation of MWSCM for general use, the applied microwave frequency of MWSCM was changed from 10 GHz to 24 GHz. Waveguide slot array antenna has been designed with the new development of the circuit of transmitting and receiving part. Improvement requests on the existing MWSCM for floods - weight lightening, measured velocity stabilization, self-test, low power consumption, and waterproof and dampproof - from the users of it have been reflected for the development of the new version of MWSCM.

2-Hexylthieno[3,2-b]thiophene-substituted Anthracene Derivatives for Organic Field Effect Transistors and Photovoltaic Cells

  • Jo, So-Young;Hur, Jung-A;Kim, Kyung-Hwan;Lee, Tae-Wan;Shin, Ji-Cheol;Hwang, Kyung-Seok;Chin, Byung-Doo;Choi, Dong-Hoon
    • Bulletin of the Korean Chemical Society
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    • v.33 no.9
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    • pp.3061-3070
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    • 2012
  • Novel 2-hexylthieno[3,2-b]thiophene-containing conjugated molecules have been synthesized via a reduction reaction using tin chloride in an acidic medium. They exhibited good solubility in common organic solvents and good self-film and crystal-forming properties. The single-crystalline objects were fabricated by a solvent slow diffusion process and then were employed for fabricating field-effect transistors (FETs) along with thinfilm transistors (TFTs). TFTs made of 5 and 6 exhibited carrier mobility as high as 0.10-0.15 $cm^2V^{-1}s^{-1}$. The single-crystal-based FET made of 6 showed 0.70 $cm^2V^{-1}s^{-1}$ which was relatively higher than that of the 5-based FET (${\mu}=0.23cm^2V^{-1}s^{-1}$). In addition, we fabricated organic photovoltaic (OPV) cells with new 2-hexylthieno [3,2-b]thiophene-containing conjugated molecules and methanofullerene [6,6]-phenyl C61-butyric acid methyl ester ($PC_{61}BM$) without thermal annealing. The ternary system for a bulk heterojunction (BHJ) OPV cell was elaborated using $PC_{61}BM$ and two p-type conjugated molecules such as 5 and 7 for modulating the molecular energy levels. As a result, the OPV cell containing 5, 7, and $PC_{61}BM$ had improved results with an open-circuit voltage of 0.90 V, a short-circuit current density of 2.83 $mA/cm^2$, and a fill factor of 0.31, offering an overall power conversion efficiency (PCE) of 0.78%, which was larger than those of the devices made of only molecule 5 (${\eta}$~0.67%) or 7 (${\eta}$~0.46%) with $PC_{61}BM$ under identical weight compositions.

Effect of Cleaning Processes of Silicon Wafer on Surface Passivation and a-Si:H/c-Si Hetero-Junction Solar Cell Performances (기판 세정특성에 따른 표면 패시배이션 및 a-Si:H/c-Si 이종접합 태양전지 특성변화 분석)

  • Song, Jun-Yong;Jeong, Dae-Young;Kim, Chan-Seok;Park, Sang-Hyun;Cho, Jun-Sik;Song, Jin-Soo;Wang, Jin-Suk;Lee, Jeong-Chul
    • Korean Journal of Materials Research
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    • v.20 no.4
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    • pp.210-216
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    • 2010
  • This paper investigates the dependence of a-Si:H/c-Si passivation and heterojunction solar cell performances on various cleaning processes of silicon wafers. It is observed that the passivation quality of a-Si:H thin-films on c-Si wafers depends highly on the initial H-termination properties of the wafer surface. The effective minority carrier lifetime (MCLT) of highly H-terminated wafer is beneficial for obtaining high quality passivation of a-Si:H/c-Si. The wafers passivated by p(n)-doped a-Si:H layers have low MCLT regardless of the initial H-termination quality. On the other hand, the MCLT of wafers incorporating intrinsic (i) a-Si:H as a passivation layer shows sensitive variation with initial cleaning and H-termination schemes. By applying the improved cleaning processes, we can obtain an MCLT of $100{\mu}sec$ after H-termination and above $600{\mu}sec$ after i a-Si:H thin film deposition. By adapting improved cleaning processes and by improving passivation and doped layers, we can fabricate a-Si:H/c-Si heterojunction solar cells with an active area conversion efficiency of 18.42%, which cells have an open circuit voltage of 0.670V, short circuit current of $37.31\;mA/cm^2$ and fill factor of 0.7374. These cells show more than 20% pseudo efficiency measured by Suns-$V_{oc}$ with an elimination of series resistance.

Degradation of a nano-thick Au/Pt bilayered catalytic layer with an electrolyte in dye sensitized solar cells (염료감응태양전지의 Au/Pt 이중 촉매층의 전해질과의 반응에 따른 열화)

  • Noh, Yunyoung;Song, Ohsung
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.15 no.6
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    • pp.4013-4018
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    • 2014
  • A 0.45 $cm^2$ DSSC device with a glass/FTO/blocking layer/$TiO_2$/N719(dye)/electrolyte/50 nm-Pt/50 nm-Au/FTO/glass was prepared to examine the stability of the Au/Pt bilayered counter electrode (CE) with electrolyte and the energy conversion efficiency (ECE) of dye-sensitized solar cells (DSSCs). For comparison, a 100 nm-thick Pt only CE DSSC was also prepared using the same method. The photovoltaic properties, such as the short circuit current density ($J_{sc}$), open circuit voltage ($V_{oc}$), fill factor (FF), and ECE, were checked using a solar simulator and potentiostat with time after assembling the DSSC. The microstructure of the Au/Pt bilayer was examined by optical microscopy after 0~25 minutes. The ECE of the Pt only CE-employed DSSC was 4.60 %, which did not show time dependence. On the other hand, for the Au/Pt CE DSSC, the ECEs after 0, 5 and 15 minutes were 5.28 %, 3.64 % and 2.09 %, respectively. The corrosion areas of the Au/Pt CE determined by optical microscopy after 0, 5, and 25 minutes were 0, 21.92 and 34.06 %. These results confirmed that the ECE and catalytic activity of Au/Pt CE decreased drastically with time. Therefore, a Au/Pt CE-employed DSSC may be superior to the Pt only CE-employed one immediately after integration of the device, but it would degrade drastically with time.