• Journal of Industrial and Engineering Chemistry
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• v.68
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• pp.293-300
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• 2018

Reduced graphene oxide (rGO) nanosheets were patterned with poly[benzodithiophene-bis(decyltetradecyl-thien) naphthothiadiazole] (PBDT-DTNT) and poly[bis(triiso-propylsilylethynyl) benzodithiophene-bis(decyltetradecyl-thien) naphthobisthiadiazole] (PBDT-TIPS-DTNT-DT) and used in photovoltaics. Conductive patternings changed via surface modification of rGO; because polymers encountered a high hindrance while assembling onto grafted rGO. The best records were detected in indium tin oxide (ITO):poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS):PBDTDTNT/rGO:PBDT-DTNT:LiF:Al devices, i.e., short current density $(J_{sc})=11.18mA/cm^2$, open circuit voltage $(V_{oc})=0.67V$, fill factor (FF) = 62% and power conversion efficiency (PCE) = 4.64%. PCE increased 2.31 folds after incorporation of PBDT-DTNT into thin films. Larger polymer assemblies on bared-rGO nanosheets resulted in greater phase separations.

• Nuclear Engineering and Technology
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• v.53 no.10
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• pp.3335-3343
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• 2021

The impact of gamma radiation on a commercial off the shelf microcontroller board has been investigated. Three different tests have been performed to ascertain the radiation tolerance of the device from a nuclear decommissioning deployment perspective. The first test analyses the effect of radiation on the output voltage of the on-board voltage regulator during irradiation. The second test evaluated the effect of gamma radiation on the voltage characteristics of analogue and digital inputs and outputs. The final test analyses the functionality of the microcontroller when using an external, shielded voltage regulator instead of the on-board voltage regulator. The results suggest that a series of latch-ups occurs in the microcontroller during irradiation, causing increased current drain which can damage the voltage regulator if it does not have short-circuit protection. The analogue to digital conversion functionality appears to be more sensitive to gamma radiation than digital and analogue output functionality. Using an external, shielded voltage regulator can prove beneficial when used for certain applications. The collected data suggests that detaching the voltage regulator can extend the lifespan of the platform up to approximately 350 Gy.

• Nuclear Engineering and Technology
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• v.53 no.4
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• pp.1284-1288
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• 2021

In this work, we propose and design a GaN-based diode with a p-doped GaN (p-GaN) multi-well structure for high efficiency betavoltaic (BV) cells. The short-circuit current density (J_SC) and opencircuit voltage (V_OC) of the devices were investigated with variations of parameters such as the doping concentration, height, width of the p-GaN well region, well-to-well gap, and number of well regions. The J_SC of the device was significantly improved by a wider depletion area, which was obtained by applying the multi-well structure. The optimized device achieved a higher output power density by 8.6% than that of the conventional diode due to the enhancement of J_SC. The proposed device structure showed a high potential for a high efficiency BV cell candidate.

• Journal of Biosystems Engineering
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• v.43 no.4
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• pp.352-361
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• 2018

Purpose: The objective of this study was to develop a multilayer perceptron (MLP) model to estimate solar radiation using a solar module. Methods: Data for the short-circuit current of a solar module and other environmental parameters were collected for a year. For MLP learning, 14,400 combinations of input variables, learning rates, activation functions, numbers of layers, and numbers of neurons were trained. The best MLP model employed the batch backpropagation algorithm with all input variables and two hidden layers. Results: The root-mean-squared error (RMSE) of each learning cycle and its average over three repetitions were calculated. The average RMSE of the best artificial neural network model was $48.13W{\cdot}m^{-2}$. This result was better than that obtained for the regression model, for which the RMSE was $66.67W{\cdot}m^{-2}$. Conclusions: It is possible to utilize a solar module as a power source and a sensor to measure solar radiation for an agricultural sensor node.

• Journal of Sensor Science and Technology
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• v.28 no.4
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• pp.236-239
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• 2019

In this work, we performed an optical simulation study on the performance of a PMDPP3T:PCBM based on an organic photovoltaic (PV) device. The virtual PV device was developed in Lumerical, finite-difference time-domain (FDTD) solutions. Different layers of the PV cell have been defined through the incorporation of complex refractive index value of those layers' constituent materials. During the simulation study, the effect of the variation active layer thickness on an ideal short circuit current density ($J_{sc,ideal}$) of the PV cell has been, first, observed. Thereafter, we have investigated the impact of surface roughness of a transparent conducting oxide (TCO) electrode on $J_{sc,ideal}$ of the PV cells. From this simulation, it has been observed that the $J_{sc,ideal}$ value of the PV cell is strongly dependent on the thickness of its active layer and the photon absorption of the PV cell has gradually decreased with the increment of the TCO's surface roughness. As a result, the capability of the PV device has been reduced with the increment of the surface roughness of the TCO.

• Journal of Radiation Protection and Research
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• v.32 no.3
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• pp.117-122
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• 2007

The hydrodynamic behaviors of the clarifier with an interior baffle in a wastewater treatment plant was investigated by using a radiotracer $^{99m}Tc$(30 40 mCi) to verify the results of CFD(computational fluid dynamics) modelling in the previous study. The clarifier model was manufactured with consideration to the hydraulic similarity(1/21) of a real plant($L{\times}W{\times}H:2.6{\times}0.4{\times}0.2m$). By installation of an interior baffle to the clarifier, the strong density current at the bottom of the clarifier decreased substantially and increased the area of sludge settling zone, which were visualized successfully from the radiotracer experiment. Also the portion of short circuit stream changed from 48 % to 32 % and the mean residence time of sludge decreased from 940 sec to 810 sec, which corresponds to the results of CFD modelling. As a result, it is anticipated that radiotracer technology can be used as an important tool for designing new wastewater treatment plants and verifying their performances after structural modifications.

• Journal of the Korea Institute of Construction Safety
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• v.1 no.1
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• pp.31-39
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• 2018

It is reported that about 20 % of all fires in Korea are caused by the electric equipment and installations. In complex and large-scale buildings, the sizes of electric fires are becoming larger as property damage and casualties increase. Among the causes of various electric fires, fire by short circuit accounts for about 71.5% of overall fires, and in the classification by electric equipment and installation, fire caused by wiring and wiring equipment accounts for approximately 38.3% of overall fires. The purpose of this study is to propose methods to prevent electric fires due to short circuit by improving indoor wiring currently in use and to find the fundamental measures to prevent wiring equipment caused fires by improving the socket and plug which are commonly used in wiring equipment. It is expected that the electric fire prevention measures presented through this study can be used as a measure to protect many people and properties by eliminating the root cause of electric fire.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.2
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• pp.128-133
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• 2008

Phase-change random access memory (PRAM) chip cell phase of amorphous state is rapidly changed to crystal state above 160 Celsius degree within several seconds during Infrared (IR) reflow. Thus, on-board programming method is considered for PRAM chip programming. We demonstrated the functional 512Mb PRAM with 90nm technology using several novel core circuits, such as metal-2 line based global row decoding scheme, PN-diode cells based BL discharge (BLDIS) scheme, and PMOS switch based column decoding scheme. The reverse-state standby current of each PRAM cell is near 10 pA range. The total leak current of 512Mb PRAM chip in standby mode on discharging state can be more than 5 mA. Thus in the proposed BLDIS control, all bitlines (BLs) are in floating state in standby mode, then in active mode, the activated BLs are discharged to low level in the early timing of the active period by the short pulse BLDIS control timing operation. In the conventional sense amplifier, the simultaneous switching activation timing operation invokes the large coupling noise between the VSAREF node and the inner amplification nodes of the sense amplifiers. The coupling noise at VSAREF degrades the sensing voltage margin of the conventional sense amplifier. The merit of the proposed sense amplifier is almost removing the coupling noise at VSAREF from sharing with other sense amplifiers.

• Journal of Energy Engineering
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• v.13 no.1
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• pp.12-19
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• 2004

A Molded Case Circuit Breaker (MCCB) is an electric control device to interrupt the abnormal currents which result from the over-loads or short-circuits. Its malfunction will result in severe accidents. In the development of the MCCB, higher current-rating and improved thermal performance become more and more important in providing the safe function and reliability for the modern devices requiring small scale and high performance. It is also very important to consider the factors of temperature rise in the design of MCCB. The major reasons of temperature rise in the MCCB result from the resistances, which are come from the connection and contact surfaces. These resistances are influenced by current, time, configuration of contact surfaces and applied voltage. In order to predict the temperature distribution inside MCCB, we have simulated the model with some assumptions and simplifications, using commercial code ICEPAK. To verify the results of temperature field analysis, the numerical results are compared with experimental ones for the same model. The results show a good agreement with actual temperature rise obtained by experiments.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.16 no.2
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• pp.113-120
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• 2002

This paper describes characteristics of transient voltage waveforms caused by human electrostatic discharges(ESDs). For purpose of achieving the statistics on the meaningful amplitude and initial slope for transient ESD voltage waveforms, transient voltages due to human ESDs in various conditions were observed. A voltage measuring system with a wide bandwidth from DC to 400[MHz] was employed. ESD voltage waveforms are approximately the same as ESD current waveforms. Also the simulated results, which are calculated by the reposed equivalent circuit, are closely similar to the measured voltage waveforms. ESD voltage waveforms are strongly dependent on the approach speed and material of intruder, a fast approach causes ESD voltage waveform with a steep rise time than for a slow approach. The voltage waveforms from dialect finger ESDs have a relatively long rise time of 10∼30[ns], but their peaks are low. On the other side ESD voltage waveforms causer by screwdriver with insulating handle have a steep slope with a very short, less than 1[ns] rise time, but their initial spikes are extremely high The obtained results in this work would be applied to solve ESD problems for low voltage and small current electronic devices.