• Current Photovoltaic Research
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• v.3 no.2
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• pp.39-44
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• 2015

$Cu(In,Ga)_3Se_5$ (${\beta}-CIGS$) has a band gap of 1.35 eV which is an optimum value for high solar-energy conversion efficiency. However, ${\beta}-CIGS$ film was not well characterized yet due to lower efficiency compared to $Cu(In,Ga)Se_2$ (${\alpha}-CIGS$). In this work, ${\beta}-CIGS$ films were fabricated by a three-stage co-evaporation of elemental sources with various Se fluxes. As the Se flux increased, the crystallinity of ${\beta}-CIGS$ phase was improved from the analysis of Raman spectroscopy and a deep-level defect was reduced from the analysis of photoluminescence spectroscopy. A Se treatment of the ${\beta}-CIGS$ film at $200^{\circ}C$ increased Ga content and decreased Cu content at the surface of the film. With the Se treatment at $200^{\circ}C$, the cell efficiency was greatly improved for the CIGS films prepared with low Se flux due to the increase of short-circuit current and fill factor. It was found that the main reason of performance improvement was lower Cu content at the surface instead of higher Ga content.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.63 no.8
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• pp.1070-1074
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• 2014

With the development of the electronics industry and widespread supply of many different electrical appliances, the factors of the electrical fires are also diversified. For this reason, the fuse, safety-critical component, needs accurate and stable operating characteristics for preventing various fire factor, and also needs various operating characteristics. Especially when the all electrical resistance are dropped by internal short of circuit, high current inrushes and makes the fire. In order to prevent this, very fast acting fuses should be applied. However, existing very fast acting characteristics fuse has less wire dimension of element Ag100% metal than that of fast acting fuse, and it is made of plating with low melting point metals, so it satisfy very fast acting but it can't satisfy durability and safety. For this reason, in this study, through the analyzing fusing characteristics of Ag-Cu alloy composition, the new alloy composition, which implement to very fast acting fuse without decrease of fuse elements dimension, is suggested. And this study classify the operating characteristics changes, a resistance change, and the rated current of the fuse in the overall composition change of Ag-Cu alloying. and it can be utilized for designing fuse.

• KIEE International Transactions on Power Engineering
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• v.5A no.4
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• pp.357-365
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• 2005

This research investigates the influences of distributed generations (DG), which are interconnected to the bus by the dedicated lines, on the overcurrent relays (OCR) of the neighboring distribution feeders and also proposes a novel method to reduce the negative effects on the feeder protection. Due to the grid connected DG, the entire short-circuit capacity of the distribution networks increases, which may raise the current of the distribution feeder during normal operations as well as fault conditions. In particular, during the switching period for loop operation, the current level of the distribution feeder can be larger than the pickup value for the fault of the feeder's OCR, thereby causing the OCR to perform a mal-operation. This paper proposes the adaptive setting algorithm for the OCR of the distribution feeders having the neighboring dedicated feeders for the DG to prevent the mal-operations of the OCR under normal conditions. The proposed method changes the pickup value of the OCR by adapting the power output of the DG monitored at the relaying point in the distribution network. We tested the proposed method with the actual distribution network model of the Hoenggye substation at the Korea Electric Power Co., which is composed of five feeders supplying the power to network loads and two dedicated feeders for the wind turbine generators. The simulation results demonstrate that the proposed adaptive protection method could enhance the conventional OCR of the distribution feeders with the neighboring dedicated lines for the DG.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.9
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• pp.8-13
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• 2008

Noise in homogeneous extrinsic semiconductor samples is calculated due to distributed diffusion noise sources. As the length of the device shrinks at a fixed bias voltage, the ac-wise short-circuit noise current shows excess noise as well as thermal noise spectra. This excess noise behaves like a full shot noise when the channel length becomes very small compared with the extrinsic Debye length. For the first time, the analytic formula of the excess noise in extrinsic semiconductors from velocity-fluctuation noise sources is given for finite frequencies. This formula shows the interplay between transit time, dielectric relaxation time, and velocity relaxation time in determining the terminal noise current as well as the carrier density fluctuation. As frequency increases, the power spectral density of the excess noise rolls off. This formula sheds light on noise in nanoscale MOSFETs where quasi-ballistic transport plays an important role in carrier transport and noise.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.6
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• pp.111-118
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• 2008

In this paper, novel latch-up prevention method that employs power-up sequential switches has been proposed to relieve latch-up problem in liquid crystal display (LCD) driver ICs. These sequential switches are inserted in the 2'nd and 3'rd boosting stages, and are used to short the emitter-base terminals of parasitic p-n-p-n circuit before relevant boosting stages are activated during power-up sequence. To verily the performance of the proposed method, test chips were designed and fabricated in a 0.13-um CMOS process technology. The measurement results indicated that, while the conventional LCD driver If entered latch-up mode at $50^{\circ}C$ accompanying a significant amount of excess current, the driver IC adopting the proposed method showed no latch-up phenomenon up to $100^{\circ}C$ and maintained normal current level of 0.9mA.

• Current Photovoltaic Research
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• v.2 no.2
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• pp.59-62
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• 2014

Minority carrier diffusion length is one of the most important parameters of solar cells, especially for short circuit current density (Jsc). In this report, we proposed the calculating method of the minority carrier diffusion length ($L_n$) in CIGS solar cells through biased quantum efficiency (QE). To verify this method's reliability, we chose two CIGS samples which have different grain size and calculated $L_n$ for each sample. First of all, we calculated out that $L_n$ was 56nm and 97nm for small and large grain sized-cell through this method, respectively. Second, we found out the large grain sized-cell has about 7 times lower defect density than the small grain sized-cell using drive level capacitance profiling (DLCP) method. Consequently, we confirmed that $L_n$ was mainly affected by the micro-structure and defect density of CIGS layer, and could explain the cause of Jsc difference between two samples having same band gap.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.37 no.2
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• pp.147-152
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• 2001

Corrosion damage of boiler, factory equipment and so forth occur quickly due to using of the polluted water, resulting in increasing leak accident. Especially, working life of hot water boiler using the polluted water becomes more short, and energy loss increases. The cathodic protection method is the most economical and reliable one to prevent corrosion damage of steel structures. Mg-base alloys galvanic anode protection of cathodic protection methode is suitable for the application of hot water boiler using water with high specific resistance such as tap water. This paper is studied on the cathodic protection characteristics of hot water boiler. In tap water solution, the measurement of cathodic protection potential according to the time elapsed is carried out, and behavior of cathodic polarization with current change is investigated. The main results obtained are as follows. In hot water boiler shell, the open circuit potential of base metal become less noble than that of weld Bone, and the current density of base metal becomes low than that of weld zone. The further distance from Mg-alloy galvanic anode, the higher cathodic protection potential of hot water boiler appears. And protective potential becomes high according to pass cathodic protection time and after 6∼10 days become stable.

• The Transactions of the Korean Institute of Power Electronics
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• v.15 no.3
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• pp.218-225
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• 2010

This paper deals with a method to minimize the welding time for an AC spot welding system. The spot welding system using a conventional SCR type circuit has a disadvantage of slow control speed and no precise current control. Therefore, recently, the using of inverter type welding system is increasing. Conventional welding machine adopts several tens of switching devices connected in parallel to obtain a huge current of several thousands ampere with a short welding time. This paper analyzed a welding system consisting with 4 IGBT switches for a full-bridge inverter and conventional 60 [Hz] transformer. The simulation and experimental results show the validity of the proposed method.

• Journal of the Society of Naval Architects of Korea
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• v.35 no.4
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• pp.65-75
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• 1998

The $CO_2$ welding with 100% $CO_2$ gas is commonly used because of its cost and efficiency. Arc phenomena and spattering ratio of the $CO_2$ welding are influenced by various factors such as chemical compositions of welding wire, shielding gas, welding condition and welding power source etc.. Spattering ratio is predominantly influenced by the welding condition which determines a droplet transfer rode. In this study, arc phenomena and spattering ratio are investigated by using two type of FCW(titania type, semi-metal type). Then, the welding quality and optimum welding condition can be selected. From this study, the following results ware obtained; 1) In low current range(140A), FCW up to welding voltage(22V) resulted in a typical short circuit transfer, increase of spattering ratio and growth of spatter diameter. 2) In high current range(320A), the arc stability in titania FCW of a typical globular transfer is better than that of semi-metal FCW.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.91-96
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• 1992

The nonvolatile SNOSFET EEPROM memory devices with the channel width and iength of 15[$\mu\textrm{m}$]${\times}$15[$\mu\textrm{m}$], 15[$\mu\textrm{m}$]${\times}$1.5[$\mu\textrm{m}$] and 1.9[$\mu\textrm{m}$]${\times}$1.7[$\mu\textrm{m}$] were fabricated by using the actual CMOS 1 [Mbit] process technology. The charateristics of I$\_$D/-V$\_$D/, I$\_$D/-V$\_$G/ were investigated and compared with the channel width and length. From the result of measuring the I$\_$D/-V$\_$D/ charges into the nitride layer by applying the gate voltage, these devices ere found to have a low conductance state with little drain current and a high conductance state with much drain current. It was shown that the devices of 15[$\mu\textrm{m}$]${\times}$15[$\mu\textrm{m}$] represented the long channel characteristics and the devices of 15[$\mu\textrm{m}$]${\times}$1.5[$\mu\textrm{m}$] and 1.9[$\mu\textrm{m}$]${\times}$1.7[$\mu\textrm{m}$] represented the short channel characteristics. In the characteristics of I$\_$D/-V$\_$D/, the critical threshold voltages of the devices were V$\_$w/ = +34[V] at t$\_$w/ = 50[sec] in the low conductance state, and the memory window sizes wee 6.3[V], 7.4[V] and 3.4[V] at the channel width and length of 15[$\mu\textrm{m}$]${\times}$15[$\mu\textrm{m}$], 15[$\mu\textrm{m}$]${\times}$1.5[$\mu\textrm{m}$], 1.9[$\mu\textrm{m}$]${\times}$1.7[$\mu\textrm{m}$], respectively. The positive logic conductive characteristics are suitable to the logic circuit designing.