• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.9 no.4
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• pp.93-102
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• 1995

The purpose of this paper is to analyze the streaming electrification mechanism (SEM) generated in UHV transformer. This experiment used Couette Charger and interpreted the mechanism hydromechanically and electromagnetically. This work estimated the turbulent core density ($\rho$o) by measuring the short circuit current (isc) and the open circuit voltage (νoc) generated in Couette Charger and also studied the changes of the short circuit (isc), the open circuit voltage (νoc), the turbulent core density ($\rho$o) and the conductivity ($\sigma$) with adding BTA to restrain streaming electrification. as a result adding BTA increased the conductivity of oil and decreased the turbulent core density($\rho$o).

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.2
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• pp.301-308
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• 2011

This paper deals with the coupled electromagnetic-mechanical field analysis for short-circuit electromagnetic force of the dry-type transformer. The short-circuit currents are calculated using external circuit in accordance with short-circuit test equipment. According to short-circuit current, the generated magnetic leakage flux density in dry-type transformer model is calculated by finite element method. The radially-directed electromagnetic forces in windings are calculated using electromagnetic field analysis and then axially-directed electromagnetic forces in windings are calculated using electromagnetic-mechanical field analysis. The calculated axially-directed electromagnetic forces in high voltage winding are compared to those of measured ones and showed good agreement with experimental results.

• Nuclear Engineering and Technology
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• v.51 no.8
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• pp.1978-1982
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• 2019

The paper presents the electrical performance measurements of a prototype nuclear battery and two types of betavoltaic cells. The electrical performance was assessed by measuring current-voltage properties (I-V) and determining the short-circuit current and the open-circuit voltage. With ⁶³Ni as an irradiation source, the open-circuit voltage and the short-circuit current were determined as 1 V and 64 nA, respectively. The prototype consisted of 10 betavoltaic cells that were prepared using radioactive ⁶³Ni. Electroplating of the radioactive ⁶³Ni on an ohmic contact (Ti-Ni) was carried out at a current density of 20 mA/㎠. Two types of betavoltaic cells were studied: with an external ⁶³Ni source and a ⁶³Ni-covered source. Under irradiation of the ⁶³Ni source with an activity of 10 mCi, the open-circuit voltage V_oc of the fabricated cells reached 151 mV and 109 mV; the short-circuit current density J_sc was measured to be 72.9 nA/cm2 and 64.6 nA/㎠, respectively. The betavoltaic cells had the fill factor of 55% and 50%, respectively.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.2
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• pp.236-242
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• 1986

The dependence of the current-voltage characteristics of hydrogenated amorphous silicon pin solar cells on the illumimination light intensity has been investigated. The open circuit voltage increases linearly with increasing the logarithm of light intensity up to AM 1, and nearly saturates above AM 1, indicating the open circuit voltage approaching the built-in potential of the pin solar cell above AM 1. The short circuit current density increase with light intensity in proportion to I**0.85 before and I**0.97 after light exposure. Since the series resistance devreses and shunt resistance increases with light intensily, the fill factor increases with light illumination. To increase the fill factor at high illumination in large area solar cells, t6he grid pattern on the ITO substrates should be made. Long light exposure on the solar cells gives rise to the increase of bulk resistance and defect states, resulting in the decrease of the fil factor and short circuit current density. The potential drop in the bulk of the a-Si:H pin solar cells at short circuit condition increases with decreasing temperature, and increases after long light exposure.

• Journal of Advanced Marine Engineering and Technology
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• v.39 no.1
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• pp.81-85
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• 2015

The organic/inorganic hybrid photovoltaic devices have been studied using Poly(3-hexylthiophene-2,5-diyl) (P3HT) : [6, 6]-Phenyl C61 butyric acid methyl ester (PCBM) and GaN. We traced the effect of short circuit current density with different annealing method under the various concentration and ratio of P3HT:PCBM. During the pre-annealing course, the heat treatments were performed each time at low temperature after the organic layer coated and the samples were heated at high temperature through one or two steps under the post-annealing process. It revealed that the samples with post-annealing process had higher values of short circuit current density than the other samples upon pre-annealing. And the interesting high short circuit current density features were observed at 1:1 mixing ratio and 1wt% of P3HT:PCBM.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.9
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• pp.50-55
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• 1997

In order to improve the electrical performance of ITO/InP solar cells, sulfur passivation technique was employed using (N $H_{4}$)$_{2}$ $S_{x}$ solution. Passivation effects were analyzed by measuring the short circuit current density ( $J_{sc}$ ) of solar cells and photoluminescence (PL) of ITO/InP interfaces. This paper firstly reports the sulfur passivation effects by investigating the correlation between the PL intensity and the short circuit current. Generally, PL intensity and the short circuit current of sulfur passivated sampels wer eincreased, and showed the same trend. Especially, samples prepared at 60.deg. C (N $H_{4}$)$_{2}$ $S_{x}$ solution exhibited the highest $J_{sc}$ and PL intensity. These results demonstrated that the short circuit currents was influenced by the ITO/InP interface states.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.2
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• pp.115-120
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• 2014

Photo electrode is an important component for DSSC. DSSCs electrical characteristics and efficiencies fabricated with different $TiO_2$ photo electrodes thickness and modified phoro electrode surface area were studied. $11{\mu}m$ $TiO_2$ photo electrode shows a 4.956% efficiency. The highest short circuit current density was a $9.949mA/cm^2$. Efficiencies and short circuit current density increased as tape casting thickness decreased. Modified surface area of the photo electrode by needle stamp processing were studied. 200 times needle stamp processing on photo electrodes shows a highest 5.168% efficiency. Also the short circuit current density was a $10.261mA/cm^2$.

• Journal of Electrical Engineering and Technology
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• v.12 no.4
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• pp.1566-1574
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• 2017

When the inter-turn short circuit (ITSC) fault occurs, the distortion of the magnetic field is serious. The motor loss variations of each part are obvious, and the motor temperature field is also affected. In order to obtain the influence of the ITSC fault on the motor temperature distribution, firstly, the normal and the fault finite element models of the permanent magnet synchronous motor (PMSM) were established. The magnetic density distribution and the eddy current density distribution were analyzed, and the mechanism of loss change was revealed. The effects of different forms and degrees of the fault on the loss were obtained. Based on the loss analysis, the motor temperature field calculation model was established, and the motor temperature change considering the loop current was analyzed. The influence of the fault on the motor temperature distribution was revealed. The sensitivity factors that limit the motor continuous operation were obtained. Finally, the correctness of the simulation was verified by experiments. The conclusions obtained are of great significance for the fault and high temperature demagnetization of the permanent magnet analysis.

• Electrical & Electronic Materials
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• v.9 no.1
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• pp.44-50
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• 1996

In this study, Selenium device was fabricated by vacuum evaporation method with the substrate temperature at room temperature and its electrical and optical properties were investigated to be used in optical device. The film properties largely depended on the transmittance and annealing time, and improved with aging owing to stress release. We found that the photocurrent of the films increase linearly with light illumination. As a result, Selenium device made by this method yielded a short circuit current density of 10.5mA/$\textrm{cm}^2$, an open circuit voltage of 39OmV.

• Progress in Superconductivity and Cryogenics
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• v.6 no.3
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• pp.44-49
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• 2004

As the load density of KEOCO system is higher, the fault current can be much higher than SCC(Short Circuit Capacity) of circuit breaker. Fault current exceeding the rating of circuit breaker is a very serious problem in high density load area, which can threaten the stability of whole power system. Even though there are several alternatives to reduce fault current, as the superconductivity technology has been developed, the HTS-FCL(High Temperature Superconductivity Fault Current Limiter) can be one of the attractive alternatives to solve the fault current problem. This study presents the application of 154kV HTS-FCL in Korean power system.