• Korean Journal of Metals and Materials
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• v.50 no.8
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• pp.605-611
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• 2012

ZnO nanostructures were grown on R-plane sapphire substrates with seed layers annealed at different temperatures ranging from 600 to $800^{\circ}C$. The properties of the ZnO nanostructures were investigated by scanning electron microscopy, high-resolution X-ray diffraction, UV-visible spectrophotometer, and photoluminescence. For the as-prepared seed layers, ZnO nanorods and ZnO nanosheets were observed. However, only ZnO nanorods were grown when the annealing temperature was above $700^{\circ}C$. The crystal qualities of the ZnO nanostructures were enhanced when the seed layers were annealed at $700^{\circ}C$. In addition, the full width at half maximum (FWHM) of near-band-edge emission (NBE) peak was decreased from 139 to 129 meV by increasing the annealing temperature to $700^{\circ}C$. However, the FWHM was slightly increased again by a further increase in the annealing temperature. Optical transmittance in the UV region was almost zero, while that in the visible region was gradually increased as the annealing temperature increased to $700^{\circ}C$. The optical band gap of the ZnO nanostructures was increased as the annealing temperature increased to $700^{\circ}C$. It is found that the optical properties as well as the structural properties of the rod-shaped ZnO nanostructures grown on R-plane sapphire substrates by hydrothermal method are improved when the seed layers are annealed at $700^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.154-155
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• 2012

The promise of nano-crystalites (nc) as a technological material, for applications including display backplane, and solar cells, may ultimately depend on tailoring their behavior through doping and crystallinity. Impurities can strongly modify electronic and optical properties of bulk and nc semiconductors. Highly doped dopant also effect structural properties (both grain size, crystal fraction) of nc-Si thin film. As discussed in several literatures, P atoms or radicals have the tendency to reside on the surface of nc. The P-radical segregation on the nano-grain surfaces that called self-purification may reduce the possibility of new nucleation because of the five-coordination of P. In addition, the P doping levels of ${\sim}2{\times}10^{21}\;at/cm^3$ is the solubility limitation of P in Si; the solubility of nc thin film should be smaller. Therefore, the non-activated P tends to segregate on the grain boundaries and the surface of nc. These mechanisms could prevent new nucleation on the existing grain surface. Therefore, most researches shown that highly doped nc-thin film by using conventional PECVD deposition system tended to have low crystallinity, where the formation energy of nucleation should be higher than the nc surface in the intrinsic materials. If the deposition technology that can make highly doped and simultaneously highly crystallized nc at low temperature, it can lead processes of next generation flexible devices. Recently, we are developing a novel CVD technology with a neutral particle beam (NPB) source, named as neutral beam assisted CVD (NBaCVD), which controls the energy of incident neutral particles in the range of 1~300eV in order to enhance the atomic activation and crystalline of thin films at low temperatures. During the formation of the nc-/pm-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. In the case of phosphorous doped Si thin films, the doping efficiency also increased as increasing the reflector bias (i.e. increasing NPB energy). At 330V of reflector bias, activation energy of the doped nc-Si thin film reduced as low as 0.001 eV. This means dopants are fully occupied as substitutional site, even though the Si thin film has nano-sized grain structure. And activated dopant concentration is recorded as high as up to 1020 #/$cm^3$ at very low process temperature (＜ $80^{\circ}C$) process without any post annealing. Theoretical solubility for the higher dopant concentration in Si thin film for order of 1020 #/$cm^3$ can be done only high temperature process or post annealing over $650^{\circ}C$. In general, as decreasing the grain size, the dopant binding energy increases as ratio of 1 of diameter of grain and the dopant hardly be activated. The highly doped nc-Si thin film by low-temperature NBaCVD process had smaller average grain size under 10 nm (measured by GIWAXS, GISAXS and TEM analysis), but achieved very higher activation of phosphorous dopant; NB energy sufficiently transports its energy to doping and crystallization even though without supplying additional thermal energy. TEM image shows that incubation layer does not formed between nc-Si film and SiO2 under later and highly crystallized nc-Si film is constructed with uniformly distributed nano-grains in polymorphous tissues. The nucleation should be start at the first layer on the SiO2 later, but it hardly growth to be cone-shaped micro-size grains. The nc-grain evenly embedded pm-Si thin film can be formatted by competition of the nucleation and the crystal growing, which depend on the NPB energies. In the evaluation of the light soaking degradation of photoconductivity, while conventional intrinsic and n-type doped a-Si thin films appeared typical degradation of photoconductivity, all of the nc-Si thin films processed by the NBaCVD show only a few % of degradation of it. From FTIR and RAMAN spectra, the energetic hydrogen NB atoms passivate nano-grain boundaries during the NBaCVD process because of the high diffusivity and chemical potential of hydrogen atoms.

• Journal of the Korean Ceramic Society
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• v.42 no.4
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• pp.245-250
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• 2005

ZnO was deposited on sapphire single crystal substrate by an ultrasonic pyrolysis of Zinc Acetate Dehydrate (ZAH) with carrying Ar gas. Through Thermogravimetry-Differential Scanning Calorimetry(TG-DSC), zinc acetate dihydrate was identified to be dissolved into ZnO above $380^{\circ}C$. ZnO deposited at $380-700^{\circ}C$ showed polycrystalline structures with ZnO (101) and ZnO (002) diffraction peaks like bulk ZnO in XRD, and from which c-axis strain ${\Sigma}Z=0.2\%$ and compressive biaxial stress$\sigma=-0.907\;GPa$ was obtained for the ZnO deposited $400^{\circ}C$. Scanning electron microscope revealed that microstructures of the ZnO were dependent on the deposition temperature. ZnO grown below temperature $600^{\circ}C$ were aggregate consisting of zinc acetate and ZnO particles shaped with nanoblades. On the other hand the grain of the ZnO deposited at $700^{\circ}C$ showed a distorted hexagonal shape and was composed of many ultrafine ZnO powers of 10-25 nm in size. The formation of these ulrafine nm scale ZnO powers was explained by the model of random nucleation mechanism. The optical property of the ZnO was analyzed by the photoluminescence (PL) measurement.

• Resources Recycling
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• v.29 no.4
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• pp.58-66
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• 2020

Carbonation (step I) and cryo-crystallization (crystallization at low temperature) (step II) were performed to synthesize Na compounds from sodium concentrated solution. In the step 1, the solubility and pH of carbon dioxide (95 wt.%) affecting carbonation could be changed by the variation of reaction temperature. The step II was performed at 2 ℃ after carbonation. The injection of carbon dioxide was carried out twice for the stable production and the saturated solubility of carbonate ions in solution. Firstly, we tried to inject CO₂ for controlling the solubility of CO₂ by changing the reaction temperature from 35 ℃ to 10 ℃, and the second injection was aimed at 10 ℃ for inducing nucleation of Na compound through carbonation after NaCl solution addition. In the cryo-crystallization step, the crystal growth of Na compounds could be induced by slowing the carbonation rate through reaction temperature change from 10 ℃ to 2 ℃. In this study, the effect on NaOH concentration was examined and the purity of Na compound was increased when 2M NaOH was used. In addition, the synthesized Na compounds were mostly rod-shaped and consisted of sodium carbonate or sodium carbonate with monohydrate.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.47 no.3
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• pp.227-235
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• 2021

In this study, we have prepared pure planar-type ZnO and calamine powder containing both ZnO and Fe₂O₃ components as a raw material for cosmetics with UV and blue band blocking functions. The planar-type ZnO ceramic powder having a high aspect ratio in the range of 20:1 to 50:1 was synthesized by precipitation method in a zinc acetate and sodium citrate mixed solution with the electrolyte obtained by power generation with a zinc-air battery. The content of Fe₂O₃ in the artificial calamine ceramic powder could be increased by increasing the amount of iron chloride solution added, and in this case, some of the blue region of visible light and ultraviolet light were remarkably absorbed. When potassium acetate was added, the decomposition of the Zn(OH)₄^2- anion in the solution was promoted to facilitate the growth of ZnO crystal in the form of a barrier wall in the vertical direction on the (0001) plane, which could increase UV absorption by providing more opportunities. By controlling the amount of iron chloride solution and potassium acetate solution added, the composition and shape of the thin film plate-shaped artificial calamine ceramic powder can be optimized, and when applied to cosmetic formulations, the light transmittance of the blue region can be greatly reduced.

• Korean Journal of Mineralogy and Petrology
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• v.33 no.1
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• pp.53-64
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• 2020

The Samgwang deposit has been one of the largest deposits in Korea. The deposit consists of series of host rocks including Precambrian metasedimentary rocks and Jurassic Baegunsa formation, which unconformably overlies the Precambrian metasedimentary rocks. The deposit consists of eight lens-shaped quartz veins which filled fractures along fault zones in Precambrian metasedimentary rock, which feature suggest that it is an orogenic-type deposit. Laminated quartz veins are common in the deposit which contain minerals including quartz, ankerite, white mica, chlorite, apatite, rutile, arsenopyrite, sphalerite, chalcopyrite and galena. The structural formulars of white micas from laminated quartz vein and wallrock alteration are determined to be (K_1.02-0.82Na_0.02-0.00Ca_0.00)(Al_1.73-1.58Mg_0.26-0.16Fe_0.23-0.10Mn_0.00Ti_0.03-0.01Cr_0.01-0.00)(Si_3.35-3.22Al_0.79-0.65)O₁₀(OH)₂ and (K_0.75-0.67Na_0.01Ca_0.00) (Al_1.78-1.74Mg_0.16-0.15Fe_0.15-0.13Mn_0.00Ti_0.04-0.02Cr_0.01-0.00)(Si_3.33-3.26Al_0.74-0.67)O₁₀(OH)₂, respectively. It suggest that white mica from laminated quartz vein has higher interlayer cation (K+Na+Ca) and Fe+Mg+Mn+Ti content in octahedral site compared to the white mica from the wallrock alteration. Compositional variations in white mica from laminated quartz vein can be caused by phengitic or Tschermark substitution ((Al³⁺)^VI+(Al³⁺)^IV <-> (Fe²⁺ or Mg²⁺)^VI)+(Si⁴⁺)^IV) and (Fe³⁺)^VI <-> (Al³⁺)^VI substitution. Ankerite from laminated quartz vein has compositional variations of FeO and MgO contents along crystal growth direction. The geochemical and textural features suggest that laminated quartz vein from the Samgwang gold-silver deposit was formed during ductile shear stage, which is an important main gold-silver ore-forming event in orogeinc deposit.