• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.1
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• pp.11-18
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• 1995

Abstract ${\Alpha} - Al_2O_3$ tube shaped single crystals were grown by the EFG method. By using two different heating arrangement, tube shaped single crystals were grown. Comparing the grown tube shaped single crystals, tube crystal growth conditions were established.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.4
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• pp.437-440
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• 1999

New method of control based upon a physical model of the Stepanov growth technique has been developed. The controller keeps the system stable and completely denies operator's interference into the process. The system demonstrates very reliable results under commercial production of shaped sapphire crystals.

• Journal of the Korean Ceramic Society
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• v.27 no.6
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• pp.783-789
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• 1990

Shaped crystal growth apparatus were made for sapphire ribbon single crystal growth. Sapphire ribbon single crystal are grown by EFG(Edge-defined Film-fed Growth) methdo for use as watch-glass and SOS(Silicon-On-Sapphire) devices. Sapphire ribbon crystals were grown to be 40min wide, 1.8mm thick, 96mm long. Therelationshiops between growth striation and surface roughness, with various growth rates, were investigated and compared. It was found that sapphire ribbon crystal is suitable for watch-glass by measuring the transmittance in the visible light region.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.361-369
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• 1999

New method of control based upon a physical model of the Stepanov growth technique has been developed. The controller keeps the system stable and completely denies operator's interference into the process. The system demonstrates very reliable results under commercial production of shaped sapphire crystals.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.5
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• pp.163-167
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• 2020

Ring-shaped SiC (Silicon carbide) polycrystals used as an inner material in semiconductor etching equipment was manufactured using the PVT (Physical Vapor Transport) method. A graphite cylinder structure was placed inside the graphite crucible to grow a ring-shaped SiC polycrystal by the PVT method. The crystal polytype of grown crystal were analyzed using a Raman and an UVF (Ultra Violet Fluorescence) analysis. And the microstructure and components of SiC crystal were identified by a SEM (Scanning Electron Microscope) and EDS (Energy Disruptive Spectroscopy) analyses. The grain size and growth rate of SiC polycrystals fabricated by this method was varied with temperature variation in the initial stage of growth process.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.3
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• pp.306-314
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• 1994

We made EFG apparatus and grew ${\alpha}-Al_2O_3 ribbon$ ribbon shaped single crystal. We designed thermal insulation system and analyzed defects of grown single crystals.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.4
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• pp.148-151
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• 2018

A large single crystal of AlN was grown by PVT (Physical Vapor Transport) method. The AlN crystal shaped hexagonal of the diameter of about 46 mm and the thickness of 7.6 mm was grown using 33 mm seed crystal which was grown and made by ourselves. We tried to find out repeatable growth possibility for AlN crystal growth and then to evaluate the repeatability of the growth condition of the temperature of $1950{\sim}2100^{\circ}C$ and the ambient pressure of 0.1~1 atm.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.4
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• pp.381-383
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• 1999

First topic of this paper aims to clarify how oxygen and heat transfer in silicon melt under cusp-shaped magnetic fields. We obtained asymmetric temperature distribution by using time dependent and three-dimensional calculation. Second topic is study on molecular dynamics simulation, which was carried out to estimate diffusion constants of oxygen in silicon melt.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.6
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• pp.222-224
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• 2005

In suite of their superior optical and laser properties rare-earth orthovanadate single crystals have not been adopted yet into extensive industrial applications because of crystal growth difficulties. The edge-defined film-fed-growth (EFG) technique was applied successfully for the production of such crystals. At first time 1 inch $LuVO_4$ single crystals were grown by the EFG technique using newly developed die construction of high porous iridium with the application of automatic diameter control system.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.3
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• pp.245-251
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• 1994

We made EFG apparatus by induction heating and designed three different heating systems. Analysis of each heating systems and growth of various shaped sapphire single crystals.