• 한국지구물리탐사학회:학술대회논문집
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• 2007.06a
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• pp.349-352
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• 2007

Estimating the physical properties of the survey area and mapping the geotechnical basement play an important role in ocean engineering and construction field. In this study, we performed marine seismic reflection and refraction survey as an engineering application at shallow marine. We made use of the dual boomer - single channel streamer as a source-receiver in reflection seismic survey and air-gun source - the manufactured OBC(Ocean Bottom Cable)-type streamer in refraction survey. In the seismic reflection data, we could easily find the geological layers and basement. Moreover, seismic refraction data could present sediment thickness and velocity distribution.

• 한국지구물리탐사학회:학술대회논문집
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• 2007.06a
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• pp.245-250
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• 2007

The small loop EM method is a fast and convenient geophysical tool which can give shallow subsurface resistivity distribution. It can be a useful alternative of resistivity method in conductive environment. We applied the multi-frequency small loop EM method for the investigation of a soft ground landfill site which was constructed on a tideland since the resistivity of the survey area is extremely low. 3D resistivity distribution was obtained by merging 1D inversion results and shallow subsurface structure can be interpreted. By comparing the result with the drilling log and measured soil resistivity sampled at 16 drill holes, we can get lot of information such as groundwater level, thickness of landfill, salinity distribution, depth to the basement and etc.

• Progress in Superconductivity and Cryogenics
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• v.18 no.2
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• pp.5-7
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• 2016

We present an experimental investigation of the superconducting transition temperatures, $T_c$, of superconductor/ferromagnet bilayers with varying the thickness of ferromagnetic layer. FeN was used for the ferromagnetic (F) layer, and NbN and Nb were used for the superconducting (S) layer. The results were obtained using three different-thickness series of the S layer of the S/F bilayers: NbN/FeN with NbN thickness, $d_{NbN}{\approx}9.3nm$ and $d_{NbN}{\approx}10nm$, and Nb/FeN with Nb thickness $d_{Nb}{\approx}15nm$. $T_c$ drops sharply with increasing thickness of the ferromagnetic layer, $d_{FeN}$, before maximal suppression of superconductivity at $d_{FeN}{\approx}6.3nm$ for $d_{NbN}{\approx}10nm$ and at $d_{FeN}{\approx}2.5nm$ for $d_{Nb}{\approx}15nm$, respectively. After shallow minimum of $T_c$, a weak $T_c$ oscillation was observed in NbN/FeN bilayers, but it was hardly observable in Nb/FeN bilayers.

• Journal of Advanced Marine Engineering and Technology
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• v.34 no.8
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• pp.1222-1229
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• 2010

Compared to conventional high resolution acoustic profiling, ultra high resolution shallow acoustic profiling using parametric echo sounder is limited in penetration, yet it provides resolution suitable for detailed seabed investigation in the shallow waters. The parametric sub-bottom profiler system provides not only the exact determination of water depth, but also the detailed information about sediment layers and sub-bottom structures. Possible applications include dredging project, search of buried pipeline, ship wrecks, and other artificial objects through the detailed mapping of thickness and structure of the upper sedimentary layers. In this study, contaminated sediments were discriminated by the correlation of ultra high resolution profiles with geologic data. In addition, the burial depth of the submarine cable was measured by the interpretation of acoustic anomalies in the profiles.

• 한국지구물리탐사학회:학술대회논문집
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• 2008.10a
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• pp.79-84
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• 2008

Compared to conventional high resolution acoustic profiling, ultra high resolution shallow acoustic profiling is limited in penetration, yet it provides resolution suitable for detailed seabed investigation in the shallow waters. Possible applications include search of buried pipeline, ship wrecks, and other artificial objects through the detailed mapping of thickness and structure of the upper sedimentary layers. In this study, contaminated sediments were discriminated by the correlation of ultra high resolution profiles with geologic data. In addition, the burial depth of submarine cable was measured by the interpretation of acoustic anomalies in the profiles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.181-184
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• 2001

Chemical Mechanical Polishing(CMP) of Shallow Trench Isolation(STD structure in 0.18 m semiconductor device fabrication is studied. CMP process is applied for the STI structure with and without reverse moat pattern and End Point Detection (EPD) method is tested. To optimize the transistor properties related metal 1 parameters. we studied the correlation between CMP thickness of STI using high selectivity slurry. DOE of gate etch recipe, and 1st metal DC values. Remaining thickness of STI CMP is proportional to the thickness of gate-etch process and this can affect to gate profile. As CMP thickness increased. the N-poly foot is deteriorated. and the P-Poly Noth is getting better. If CD (Critical Dimension) value is fixed at some point,, all IDSN/P values are in inverse proportional to CMP thickness by reason of so called Profile Effect. Weve found out this phenomenon in all around DOE conditions of Gate etch process and we also could understand that it would not have any correlation effects between VT and CMP thickness in the range of POE 120 sec conditions. As CMP thickness increased by $100\AA$. 3.2 $u\AA$ of IDSN is getting better in base 1 condition. In POE 50% condition. 1.7 $u\AA$ is improved. and 0.7 $u\AA$ is improved in step 2 condition. Wed like to set the control target of CD (critical dimension) in gate etch process which can affect Idsat, VT property versus STI topology decided by CMP thickness. We also would like to decide optimized thickness target of STI CMP throughout property comparison between conventional STI CMP with reverse moat process and newly introduced STI CMP using high selectivity slurry. And we studied the process conditions to reduce Gate Profile Skew of which source known as STI topology by evaluation of gate etch recipe versus STI CMP thickness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.181-184
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• 2001

Chemical Mechanical Polishing(CMP) of Shallow Trench Isolation(STI) structure in 0.18 m semiconductor device fabrication is studied. CMP process is applied for the STI structure with and without reverse moat pattern and End Point Detection (EPD) method is tested. To optimize the transistor properties related metal 1 parameters, we studied the correlation between CMP thickness of STI using high selectivity slurry, DOE of gate etch recipe, and 1st metal DC values. Remaining thickness of STI CMP is proportional to the thickness of gate-etch process and this can affect to gate profile. As CMP thickness increased, the N-poly foot is deteriorated, and the P-Poly Noth is getting better. If CD (Critical Dimension) value is fixed at some point, all IDSN/P values are in inverse proportional to CMP thickness by reason of so called Profile Effect. Weve found out this phenomenon in all around DOE conditions of Gate etch process and we also could understand that it would not have any correlation effects between VT and CMP thickness in the range of POE 120 sec conditions. As CMP thickness increased by 100 ${\AA}$, 3.2 u${\AA}$ of IDSN is getting better in base 1 condition. In POE 50% condition, 1.7 u${\AA}$ is improved, and 0.7 u${\AA}$ is improved in step 2 condition. Wed like to set the control target of CD (critical dimension) in gate etch process which can affect Idsat, VT property versus STI topology decided by CMP thickness. We also would like to decide optimized thickness target of STI CMP throughout property comparison between conventional STI CMP with reverse moat process and newly introduced STI CMP using high selectivity slurry. And we studied the process conditions to reduce Gate Profile Skew of which source known as STI topology by evaluation of gate etch recipe versus STI CMP thickness.

• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.134-137
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• 2019

In this paper, the data retention characteristics were analyzed to find out the thickness effect on the trap energy distribution of silicon nitride in the silicon-oxide-nitride-oxide-silicon (SONOS) flash memory devices. The nitride films were prepared by low pressure chemical vapor deposition (LPCVD). The flat band voltage shift in the programmed device was measured at the elevated temperatures to observe the thermal excitation of electrons from the nitride traps in the retention mode. The trap energy distribution was extracted using the charge decay rates and the experimental results show that the portion of the shallow interface trap in the total nitride trap amount including interface and bulk trap increases as the nitride thickness decreases.

• Korean Architects
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• v.4 no.14 s.14
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• pp.74-79
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• 1969

As we all know a large number of thin shell with the shape of E.P and H.P have been constructed. In this paper, we will be interested to the bending problem of thin translational shell. Two basic differential equations of shallow shell are to be used to derive approximate solution of it. Stress analysis of E.P. translational shell with constant thickness under uniform surface oad is to be given as an example. More exact solution formulated by K. Apeland can be found in the proceeding, Journal of the Engineering Mechanics Division, A.S.C.E., Feburary, 1961.

• Korean Journal of Materials Research
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• v.16 no.5
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• pp.308-311
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• 2006

The purpose of this study is to investigate the difference of the wafer nanotopography impact on the oxide-film thickness variation between the STI CMP using ceria slurry and STI CMP using fumed silica slurry. The nanotopography impact on the oxide-film thickness variation after STI CMP using ceria slurry is 2.8 times higher than that after STI CMP using fumed silica slurry. It is attributed that the STI CMP using ceria slurry follows non-Prestonian polishing behavior while that using fumed silica slurry follows Prestonian polishing behavior.