• Proceedings of the KIEE Conference
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• 2003.07e
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• pp.158-161
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• 2003

A new soft switching technique that improves performance of the high power factor boost rectifier by reducing switching losses is introduced. The losses are reduced by air active snubber which consists of an inductor, a capacitor a rectifier, and an auxiliary switch. Since the boost switch turns off with zero current, this technique is well suited for implementations with insulated gate bipolar transistors. The reverse recovery related losses of the rectifier are also reduced by the snubber inductor which is connected in series with the boost switch and the boost rectifier. In addition, the auxiliary switch operates with zero voltage switching. A complete design procedure and extensive performance evaluation of the proposed active snubber using a 1.2[kW] high power factor boost rectifier operating from a $90[V_{rms}]$ input are also presented.

• Proceedings of the KIPE Conference
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• 2012.07a
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• pp.230-231
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• 2012

This paper describes a gate driver that operates numerous semiconductor switch in the solide-state pulsed power modulator. the proposed gate driver is designed to receive both the isolated drive-power and the on/off pulse signals through the transformer. Moreover, the IGBT-switch can be quickly turned off by adding protection circuit. Therefore it protects the IGBT-switch from the arc condition that frequently occurs in high-voltage pulse application. To comprehend operating characteristic of each IGBT-switch in pulse output condition, the device consisting of a high efficiency soft-switching capacitor charger and two series stacking IGBT-switch is developed. Finally, the relability of the proposed gate driver and the device for its test are proved through PSpice simulation and experiments.

• Progress in Superconductivity and Cryogenics
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• v.7 no.1
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• pp.21-24
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• 2005

The problem of fluctuation-induced digital errors in a rapid single flux quantum (RSFQ) circuit has been very important issue. So in this experiment, we calculated error rate of RSFQ switch in superconductiyity ALU, The RSFQ switch should have a very low error rate in the optimal bias. We prepared two circuits Placed in parallel. One was a 10 Josephson transmission lines (JTLs) connected in series, and the other was the same circuit but with an RSFQ switch placed in the middle of the 10 JTLs. We used a splitter to feed the same input signal to the both circuits. The outputs of the two circuits were compared with an RSFQ XOR to measure the error rate of the RSFQ switch. By using a computerized bit error rate test setup, we measured the bit error rate of 2.18$\times$$10^{12}$ when the bias to the RSFQ switch was 0.398mh that was quite off from the optimum bias of 0.6mA.

• Proceedings of the KIEE Conference
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• 1999.07e
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• pp.2189-2191
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• 1999

To improve the reliability of the klystron-modulator systems, the stable operations of the thyratron an important factor of the system are required. The thyratron always has a possibility of self-fire according to the conditions of the applied high voltage and this induces the system fault. Therefore a command charging method was introduced to reduce the applied tim8 of the high voltage into the thyratron. The high voltage switch used in the command charging method is the SCR (1.6 kV, 50A) and consists of 10 SCRs in series to discharge 10 kV. A pulse transformer was used to apply the trigger pulse. The objectives of this research are the fabrication of the semiconductor switch and the study of the experimental result of the operation characteristics of the high voltage semiconductor switch.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1026-1029
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• 1993

Inherent speed-torque performance of Switched Reluctance Motor is similar to that of series wound DC motor. Thus, the speed of the motor is extremely regulated according to load torque. For the purpose of controlling the speed and torque of SRM it is necessary to change the applied DC link voltage or the switch-ON and switch-OFF angles which control the phase current of the motor. This paper describes speed-torque characteristics of an integral horse power Switched Reluctance Motor by adjusting the switch-ON and switch-OFF angles. Speed at rated load torque can be regulated by adjusting the switching angles and the control scheme is applied to 2kW, 3 phase, 6/4 SRM.

• Proceedings of the KIPE Conference
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• 2002.07a
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• pp.707-710
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• 2002

A 120kV/70A high voltage switch has been installed at Korea Atomic Energy Research Institute in Taejon to supply power with Korea Superconducting Tokamak Advanced Research (KSTAR) Neutral Beam Injection (NBI) system. NBI system requires fast cutoff of the power supply voltage for protection of the grid when arc detected and fast turn-on the voltage for sustaining the beam current. Therefore the high voltage switch and arc current detection circuit are important part of the NBI power supply and there are much need for high voltage solid state switches in NBI system and a broad area of applications. This switch consisted of 100 series connected MOSFETs and adopted the proposed simple and reliable gate drive circuit without bias supply, Various results taken during the commissioning phase with a 100kW resistive load and NBI source are shown. This paper presents the detailed design of 120kV/70A high voltage MOSFETs switch and simple gate drive circuit. Problems with the high voltage switch and gate driver and solutions are also presented.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.6
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• pp.584-597
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• 2011

In this paper, low-loss and high-power RF SP6T switch chips are designed, fabricated and measured for GSM/EGSM/DCS/PCS applications using WIN Semiconductors 0.5 ${\mu}m$ pHEMT process. We utilized a combined configuration of series and series-shunt structures for optimized switch performance, and a common transistor structure on a receiver path for reducing chip area. The gate width and the number of stacked transistors are determined using ON/OFF input power level of the transceiver system. To improve the switch performance, feed-forward capacitors, shunt capacitors and parasitic FET inductance elimination due to resonance are actively used. The fabricated chip size is $1.2{\times}1.5\;mm^2$. S-parameter measurement shows an insertion loss of 0.5~1.2 dB and isolation of 28~36 dB. The fabricated SP6T switch chips can handle 4 W input power and suppress second and third harmonics by more than 75 dBc.

• Journal of Electrical Engineering and Technology
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• v.10 no.3
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• pp.1015-1024
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• 2015

This paper introduces a low cost, high efficiency, high performance three-phase unified power quality conditioner (UPQC) by using four-switch three-phase inverters (FSTPIs) and an extra capacitor in the shunt active power filter (APF) side of the UPQC. In the proposed UPQC, both shunt and series APFs are developed by using FSTPIs so that the number of switching devices is reduced from twelve to eight devices. In addition, by inserting an additional capacitor in series with the shunt APF, the DC-link voltage in the proposed UPQC can also be greatly reduced. As a result, the system cost and power loss of the proposed UPQC is significantly minimized thanks to the use of a smaller number of power switches with a lower rating voltage without degrading the compensation performance of the UPQC. Design of passive components for the proposed UPQC to achieve a good performance is presented in detail. In addition, comparisons on power loss, overall system efficiency, compensation performance between the proposed UPQC and the traditional one are also determined in this paper. Simulation and experimental studies are performed to verify the validity of the proposed topology.

• Proceedings of the KIPE Conference
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• 1999.07a
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• pp.206-209
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• 1999

There exists an acute need for high voltage solid-state-switches in a broad area of applications. With the proposed method using simple voltage balancing circuit with series connected IGBTs, it is realized high voltage semiconductor switches with working voltages of several order kilo-volts. The operation principle of the proposed circuit is explained and analyzed. Transient and static voltage-balancing is tested on a experimenta 3kV/45A switch with four series-connected IGBTs.

• Proceedings of the KIEE Conference
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• 2002.07b
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• pp.1187-1189
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• 2002

In the case of an existing high frequency inverter is became forced extinction by quick load change, due to be connected with series inductor on switch, it is destroyed or is generated conduction loss by resistance component in reactor. And, In the operation of high current with a soft switching, conduction loss can not neglect. In this paper, for the high current power source, we make sure of soft swtching operation and reducing surge when the forced extinction by using a connected switch with series inductor. Also, we poropos a topology of the half bridge type high frequency inverter that can be realized high amplitude operation of the load current. And, analyze the circuit to decide an opmtial circuit parameter.