• Journal of the Computational Structural Engineering Institute of Korea
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• v.20 no.3
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• pp.273-279
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• 2007

Probabilistic Risk Assessment considering statistically random variables is performed for the preliminary design of an Arch Bridge. Component reliabilities of girders have been evaluated using the response surfaces of the design variables at the selected critical sections based on the maximum shear and negative moment locations. Response Surface Method (RSM) is successfully applied for reliability analyses lot this relatively small probability of failure of the complex structure, which is hard to be calculated by Monte-Carlo Simulations or by First Order Second Moment method that can not easily calculate the derivative terms in implicit limit state functions. For the analysis of system reliability, parallel resistance system composed of girders is modeled as a parallel series connection system. The upper and lower probabilities of failure for the structural system have been evaluated and compared with the suggested prediction method for the combination of failure modes. The suggested prediction method for the combination of failure modes reveals the unexpected combinations of element failures in significantly reduced time and efforts, compared with the previous permutation method or conventional system reliability analysis method.

• Korean Journal of Materials Research
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• v.20 no.4
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• pp.210-216
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• 2010

This paper investigates the dependence of a-Si:H/c-Si passivation and heterojunction solar cell performances on various cleaning processes of silicon wafers. It is observed that the passivation quality of a-Si:H thin-films on c-Si wafers depends highly on the initial H-termination properties of the wafer surface. The effective minority carrier lifetime (MCLT) of highly H-terminated wafer is beneficial for obtaining high quality passivation of a-Si:H/c-Si. The wafers passivated by p(n)-doped a-Si:H layers have low MCLT regardless of the initial H-termination quality. On the other hand, the MCLT of wafers incorporating intrinsic (i) a-Si:H as a passivation layer shows sensitive variation with initial cleaning and H-termination schemes. By applying the improved cleaning processes, we can obtain an MCLT of $100{\mu}sec$ after H-termination and above $600{\mu}sec$ after i a-Si:H thin film deposition. By adapting improved cleaning processes and by improving passivation and doped layers, we can fabricate a-Si:H/c-Si heterojunction solar cells with an active area conversion efficiency of 18.42%, which cells have an open circuit voltage of 0.670V, short circuit current of $37.31\;mA/cm^2$ and fill factor of 0.7374. These cells show more than 20% pseudo efficiency measured by Suns-$V_{oc}$ with an elimination of series resistance.

• Journal of KIISE:Computer Systems and Theory
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• v.35 no.1
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• pp.18-29
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• 2008

NAND Flash memory has been growing popular storage device for the last years because of its low power consumption, fast access speed, shock resistance and light weight properties. However, it has the distinct characteristics such as erase-before-write architecture, asymmetric read/write/erase speed, and the limitation on the number of erasure per block. Due to these limitations, various Flash Translation Layers (FTLs) have been proposed to effectively use NAND flash memory. The systems that adopted the conventional FTL may result in severe performance degradation by the hot data which are frequently requested data for overwrite in the same logical address. In this paper, we propose a novel FTL algorithm called Adaptive Flash Translation Layer (AFTL) which uses sector mapping method for hot data and log-based block mapping method for cold data. Our system removes the redundant write operations and the erase operations by the separating hot data from cold data. Moreover, the read performance is enhanced according to sector translation that tends to use a few read operations. A series of experiments was organized to inspect the performance of the proposed method, and they show very impressive results.

• Journal of the Korean Vacuum Society
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• v.21 no.3
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• pp.164-170
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• 2012

The dependance of degradation on the blue-peak wavelength is investigated with the blue light-emitting diode (LED) of InGaN/GaN with respect to the optical and the electrical characteristics of the devices. The LED devices emitting the blue-peak wavelength ranging from 437 nm to 452 nm is prepared to be stressed for a long aging time with three different currents of 60 mA, 75 mA and 90 mA, respectively. The degradation of optical intensity is observed with and without phosphor in the devices. The device without phosphor has been degraded significantly as the wavelength of blue-peak is decreased while the optical intensity of LED device with phosphor become less sensitive than that of device without phosphor. The electrical property does not depend on the emission peak wavelength. However, the series-resistance of LED device is slowly increased as the aging time is increased. The deformation of device is observed severely the short wavelength of blue-peak even with the same current since the short wavelength is absorbed substantially at the materials of device during the aging time. Consequently, in order to enhance the lifetime of LED devices, it is important to understand the optical degradation property of the materials against the specific wavelengths emitted from the blue chip.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.345-346
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• 2013

InGaN material is being studied increasingly as a prospective material for solar cells. One of the merits for solar cell applications is that the band gap energy can be engineered from 0.7 eV for InN to 3.4 eV for GaN by varying of indium composition, which covers almost of solar spectrum from UV to IR. It is essential for better cell efficiency to improve not only the crystalline quality of the epitaxial layers but also fabrication of the solar cells. Fabrication includes transparent top electrodes and surface texturing which will improve the carrier extraction. Surface texturing is one of the most employed methods to enhance the extraction efficiency in LED fabrication and can be formed on a p-GaN surface, on an N-face of GaN, and even on an indium tin oxide (ITO) layer. Surface texturing method has also been adopted in InGaN-based solar cells and proved to enhance the efficiency. Since the texturing by direct etching of p-GaN, however, was known to induce the damage and result in degraded electrical properties, texturing has been studied widely on ITO layers. However, it is important to optimize the ITO thickness in Solar Cells applications since the reflectance is fluctuated by ITO thickness variation resulting in reduced light extraction at target wavelength. ITO texturing made by wet etching or dry etching was also revealed to increased series resistance in ITO film. In this work, we report a new way of texturing by deposition of thickness-optimized ITO films on ITO nano dots, which can further reduce the reflectance as well as electrical degradation originated from the ITO etching process.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.399-399
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• 2013

Metal silicides는 Si 기반의microelectronic devices의 interconnect와 contact 물질 등에 사용하기 위하여 그 형성 mechanism과 전기적 특성에 대한 연구가 많이 이루어지고 있다. 이 중 Rare-earth(RE) silicides는 저온에서 silicides를 형성하고, n-type Si과 낮은 Schottky Barrier contact (~0.3 eV)을 이룬다. 또한 낮은 resistivity와 Si과의 작은 lattice mismatch, 그리고 epitaxial growth의 가능성, 높은 thermal stability 등의 장점을 갖고 있다. RE silicides 중 ytterbium silicide는 가장 낮은 electric work function을 갖고 있어 n-channel schottky barrier MOSFETs의 source/drain으로 주목받고 있다. 또한 Silicon 기반의 CMOSFETs의 성능 향상 한계로 인하여 germanium 기반의 소자에 대한 연구가 이루어져 왔다. Ge 기반 FETs 제작을 위해서는 낮은 source/drain series/contact resistances의 contact을 형성해야 한다. 본 연구에서는 저접촉 저항 contact material로서 ytterbium germanide의 가능성에 대해 고찰하고자 하였다. HRTEM과 EDS를 이용하여 ytterbium germanide의 미세구조 분석과 면저항 및 Schottky Barrier Heights 등의 전기적 특성 분석을 진행하였다. Low doped n-type Ge (100) wafer를 1%의 hydrofluoric (HF) acid solution에 세정하여 native oxide layer를 제거하고, 고진공에서 RF sputtering 법을 이용하여 ytterbium 30 nm를 먼저 증착하고, 그 위에 ytterbium의 oxidation을 방지하기 위한 capping layer로 100 nm 두께의 TiN을 증착하였다. 증착 후, rapid thermal anneal (RTA)을 이용하여 N2 분위기에서 $300{\sim}700^{\circ}C$에서 각각 1분간 열처리하여 ytterbium germanides를 형성하였다. Ytterbium germanide의 미세구조 분석은 transmission electron microscopy (JEM-2100F)을 이용하였다. 면 저항 측정을 위해 sulfuric acid와 hydrogen peroxide solution (H2SO4:H2O2=6:1)에서 strip을 진행하여 TiN과 unreacted Yb을 제거하였고, 4-point probe를 통하여 측정하였다. Yb germanides의 면저항은 열처리 온도 증가에 따라 감소하다 증가하는 경향을 보이고, $400{\sim}500^{\circ}C$에서 가장 작은 면저항을 나타내었다. HRTEM 분석 결과, deposition 과정에서 Yb과 Si의 intermixing이 일어나 amorphous layer가 존재하였고, 열처리 온도가 증가하면서 diffusion이 더 활발히 일어나 amorphous layer의 두께가 증가하였다. $350^{\circ}C$ 열처리 샘플에서 germanide/Ge interface에서 epitaxial 구조의 crystalline Yb germanide가 형성되었고, EDS 측정 및 diffraction pattern을 통하여 안정상인 YbGe2-X phase임을 확인하였다. 이러한 epitaxial growth는 면저항의 감소를 가져왔으며, 열처리 온도가 증가하면서 epitaxial layer가 증가하다가 고온에서 polycrystalline 구조의 Yb germanide가 형성되어 면저항의 증가를 가져왔다. Schottky Barrier Heights 측정 결과 또한 면저항 경향과 동일하게 열처리 증가에 따라 감소하다가 고온에서 다시 증가하였다.

• Asian Journal of Turfgrass Science
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• v.17 no.2_3
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• pp.67-73
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• 2003

A series of studies was conducted during 2 years to investigate the effect of transplanting time and turfgrass species on turf establishment rate of sod for 2002 World Cup Soccer ground construction. The required period of rooting and turf growth for acceptable soccer playing quality on transplanted sod from nursery was tested to collect data for the project authorities of hosting cities and construction companies who were involved in World Cup stadium project. Transplanting time significantly affects on rooting-potential of sod on cool season grass and zoysiagrass, but those effects differently showed by turfgrass species. The enough nursing period for the ground established by Zousiagrass should be secured with proper transplanting time. And the thermal insulation on the turf canopy with other maintenance during Winter should improve the early rooting on zoysiagrass. The sod contained Kentucky bluegrass (85％＋15％ perennial ryegrass, seed wt. basis) showed relatively slow at the early growth and rooting-potential of root, but the potential resulted higher than that of perennial ryegrass turf (85％＋15％ Kentucky) under longer nursing period. Kentucky bluegrass has one of the most strong resistance against environmental stresses, but intensive maintenance practise should be required when the turf transplanted during summer season. Higher mixture rate of perennial ryegrass sod has a rapid root growth compare with other turfgrass species. The rate provided a benefit to an early establishment of turf ground followed by a proper maintenance practise. For the completion of World Cup soccer ground construction for 2002, the most suitable time for sod transplanting in 2001 was March to May or mid Sept. to early Oct. by delayed architect construction schedule.

• Membrane Journal
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• v.6 no.2
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• pp.86-95
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• 1996

Rotary disc ultrafiltration module(RDM) was developed for the separation of oil e$$\mu$sions. This module was devised to reduce the gel polarization phenomenon by decoupling the operation pressure and the surface velocity of solution in ultrafiltration(UF) processes. The rotary disc membrane consists of 3mm-thick ABS plate covered with UF membrane (UOP, U.S.A.). When the angular velocity($\omega$) was increased, the pure water flux was slightly decreased due to pressure drop caused by centrifugal force and slip flow at the surface of membrane. The pressure drop was proportional to the square of linear velocity(${\omega}r$). When the angular velocity was changed from 52.36rad/s to 2.62rad/s, the flux decline for 5% cutting oil in one-shaft RDM at $25^{\circ}C$ and 0.1MPa was 30.16%. In the lower concentrations, angular velocity tends to give less effect on the flux. Flux(J; $kg/m^{2} \cdot s$) in a rotating disc module is mainly a function of the bulk concentration($C_{B}$; %), the linear velocity(${\omega}r$; m/s) and the effective transmembrane pressure($\Delta P_{T}$ ; Pa). Using a modified resistance-in-series model, the flux data of cutting oil experiments were fitted to give the following equation.

• Korean Journal of Materials Research
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• v.12 no.8
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• pp.624-633
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• 2002

In order to improve the hydrogen storage capacity and the activation properties of the hydrogen storage alloys, the rare-earth metal alloy series, MmN $i_{4.5}$M $n_{0.5}$Z $r_{x}$(x=0, 0.025, 0.05, 0.1), are prepared by adding excess Zr in MmN $i_{4.5}$M $n_{0.5}$ alloy. The various parts in hydrogen storage vessel consisted of copper pipes reached the setting temperature within 4~5 minutes after heat addition, which indicated that storage vessel had a good heat conductivity required in application. The performance test on storage vessel filled with rare-earth metal alloys of 1000 gr was also conducted after hydrogen charging for 10 min at $18^{\circ}C$ under 10 atm. It showed that the average capacity of discharged hydrogen volume was found to be for $MmNi_{4.5}$ $Mn_{0.5}$ and $MmNi_{4.5}$ $Mn_{x}$ 0.5/$Zr_{samples}$ indicated that the released amount of hydrogen for this $AB_{5}$ type alloys was more than 92 % of theoretic value, and also it was found that the optimum discharging temperature for obtaining an appropriate pressure of 3 atm was determined to be $V^{\circ}C$ for $MmNi_{4.5}$ $Mn_{0.5}$$Zr_{x}$(x=0, 0.025, 0.05, 0.1) hydrogen storage alloys. The released amount of these hydrogen storage samples was 125 $\ell$ , 122.4 $\ell$ and 108.15 $\ell$/kg for $MmNi_{4.5}$ $Mn_{0.5}$ $Zr_{0.025}$ $MmNi_{4.5}$M $n_{0.5}$Z $r_{0.05}$, and MmN $i_{4.5}$ Mn_0.5$Zr_{0}$, at $70^{\circ}C$ respectively. Amount of the 2nd phases increase with increase on Zr contents in $MmNi_{4.5}$$Mn_{0.5}$ $Zr_{ 0.1}$/ alloy. This phenomenon indicates that$ ZrNi_3$ in $MmNi_{4.5}$ $Mn_{0.5}$ $Zr_{x}$ / phase, which shows the maximum storage capacity and the strong resistance to intrinsic degradation, is considered as a proper alloy for hydrogen storage. As the Zr contents increase, the activation time and the plateau pressure decreases and sloping of the plateau pressure increases.creases.eases.s.

• Journal of Korean Society of Steel Construction
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• v.20 no.2
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• pp.237-246
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• 2008

The cross-sections of continuous multi-span beams sometimes suddenly increase, or become stepped, at the interior supports of continuous beams to resist high negative moments. The three-dimensional finite-element program ABAQUS (2006) was used to analytically investigate the inelastic lateral-torsional buckling behavior of stepped beams subjected to pure bending moment and resulted in the development of design equations. The flanges of the smaller cross-section were fixed at 30.48 by 2.54 cm, whereas the width and/or thickness of the flanges of the larger cross-section varied. The web thickness and height of beam was kept at 1.65 cm and 88.9 cm, respectively. The ratios of the flange thickness, flange width, and stepped length of beams are considered analytical parameters. Two groups of 27 cases and 35 cases, respectively, were analyzed for double and single stepped beams. The combined effects of residual stresses and geometrical imperfection on inelastic lateral-torsional buckling of beams are considered. First, the distributions of residual stress of the cross-section is same as shown in Pi, etc (1995), and the initial geometric imperfection of the beam is set by central displacement equal to 0.1% of the unbraced length of beam. The new proposed equations definitely improve current design methods for the inelastic LTB problem and increase efficiency in building and bridge design. The proposed solutions can be easily used to develop new design equation for inelastic LTB resistance of stepped beams subjected to general loading condition such as a concentrated load, a series of concentrated loads or uniformly distributed load.