• Title/Summary/Keyword: Series resistance

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A Study on the analytical derivation of the L-I-V characteristics for a SCH QW Laser Diode (SCH 양자우물 레이저 다이오드에 대한 L-I-V 특성의 해석적도출에 관한 연구)

  • Park, Ryung-Sik;Bang, Seong-Man;Sim, Jae-Hun;Seo, Jeong-Ha
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.39 no.3
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    • pp.9-19
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    • 2002
  • By using the thermionic emission model, the L-I-V(power-current-voltage) characteristics of a SCH(seperate confinement heterostructure) QW(quantum well) laser diode is analytically derived. We derived the relationships between the bulk carrier density of SCH regions and the confined carrier density of QW. The L-I-V characteristics is derived analytically by using current continuity equations. Solving the ambipolar diffusion equation under the condition of high level injection and charge neutrality, the current distribution in the SCH regions is considered. Results showed that the major factor affecting the laser I-V characteristics was the change of potential barrier at the cladding-SCH interface. Also the series resistance of a laser diode was decreased and the carrier injection was increased by increasing the forward flux of injection current from cladding to SCH region.

Optimal circuit desgn Taking into Account The frquency dependence of coil's Q (자심코일의 Q의 주파수특성을 고려한 회로의 최적화설계)

  • 박송배
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.11 no.4
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    • pp.23-28
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    • 1974
  • One of the consistent nuisances in accurate design of circuits containing coils with core is how to take into account the frequency dependence of Q of actual coils. The conventional equivalent circuit consisting of an inductance and a series (constant) resistance and possibly a parallel (constant) capacitance is of little use in this situation since the core loss itself is strongly dependent on the frequency. In order to circumvent this difficulty, in this paper, a mathematical expression for Q of a given core as a function of inductance and frequency is first assumed and parameters in this expression are optimiged so as to best fit the data provided by the core manufacturer or obtained experimentally. This expression is then utilized in accurate calculation of the frequency response of a given circuit required in the optimal design of circuits containing coils. In other words the proposed approach is an effective combination of an approximate expression of coil's Q and circuit optimisation technique, which seems to have solved, to a great extent, the stated difficulty associated with actual coils. As for the optimization technique, ths Fletcher-Powell procedure was employed and one example was given to illustrate the proposed approach.

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Co-Expression of Putative Cancer Stem Cell Markers, CD133 and Nestin, in Skin Tumors

  • Sabet, Mehrdad Nasrollahzadeh;Rakhshan, Azadeh;Erfani, Elham;Madjd, Zahra
    • Asian Pacific Journal of Cancer Prevention
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    • v.15 no.19
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    • pp.8161-8169
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    • 2014
  • Background: Cancer stem cells (CSC) are populations of cells responsible for tumor initiation, progression and therapeutic resistance in many cancers. In the present study, we aimed to investigate the expression pattern and clinical significance of two CSC markers, CD133 and Nestin, in a series of skin tumors. Materials and Methods: One hundred and thirteen paraffin blocks from skin cancers including 16 (14%) cases of melanoma, 37 (33%) of squamous cell cancer (SCC) and 60 (53%) of basal cell cancer (BCC) were collected and assembled in a tissue microarray (TMA). The samples were immunohistochemically examined for the expression of CD133 and Nestin. Expression of these markers was also correlated with clinicopathological parameters. Results: A significant difference was observed in the expression of CD133 and Nestin in melanomas, SCC and BCC (p value=0.001). Furthermore, the level of expression was significantly higher in the melanomas compared to the SCC and BCC tumors. Expression of CD133 in the melanoma was significantly associated with increased tumor invasiveness (p value=0.05), a higher rate of metastasis (p value=0.04) and the presence of ulceration (p value=0.02). Increased expression of Nestin was observed in metastatic melanoma (p value=0.04), while no statistically significant correlation was found with other clinicopathological parameters including Breslow thickness, Clark level and ulceration. Conclusions: Elevated expression levels of CD133 and Nestin in the melanomas are associated with advanced disease, with more aggressive and metastatic skin tumors. Therefore, these markers could be potential therapeutic targets for malignant tumors of the skin.

Characterization of fine lightweight aggregates sintered at floating state using by vertical furnace (수직로에서 부유 소성된 경량 세골재의 특성)

  • Kang, Seung-Gu
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.18 no.6
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    • pp.258-263
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    • 2008
  • The fine aggregates of below 2 mm size was fabricated using by the vertical furnace in which the aggregates could be sintered at floating state and its physical properties were analyzed. The liquid formed at the surface of specimens sintered at $1200{\sim}l300^{\circ}C$ induced a gas in core to expand so the denser shell and porous core could be produced. The C series specimen fabricated by crushing an extruded body had an irregular shape and sharp edges but those became spheroidized by bloating due to gas expansion inside. The fine aggregates fabricated in this study was as light as floating in the water and had an apparent density of $0.68{\sim}1.08$. The absorption rate was proportioned to a porosity showing that the pores in core was not closed completely. The properties of fine aggregates fabricated in vertical furnace were similar with those of in an electric muffle furnace but the sticking-together phenomenon by surface fusion was not occurred in the vertical furnace. The aggregates fabricated in this study had a little lower impact resistance than that of natural aggregate but satisfied the unit volume weight standard specified in KS.

Comparison of Organic Carbon Composition in Profile by Using Solid 13C CPNMR Spectroscopy in Volcanic Ash Soil

  • Sonn, Yeon Kyu;Kang, Seong Soo;Ha, Sang Keun;Kim, Yoo Hak;Lee, Chang Hoon
    • Korean Journal of Soil Science and Fertilizer
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    • v.46 no.5
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    • pp.391-398
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    • 2013
  • Soil organic carbon (SOC) has the potential to promote the soil quality for sustainability and mitigation of global warming. There is little information on organic carbon composition despite of having resistance of carbon degradation in soil. In this study, to understand the effect of volcanic ash on organic carbon composition and quantity in soil, we investigated characteristics of volcanic soil and compared organic carbon composition of soil and humic extract by using $^{13}C$-CPMAS-NMR spectra under soil profiles of Namweon series in Jeju. SOC contents of inner soil profiles were 134.8, 101.3, and 27.4 g C $kg^{-1}$ at the layer of depth 10-20, 70-80 and 90-100 cm, respectively. These layers were significantly different to soil pH, oxalate Al contents, and soil moisture contents. Alkyl C/O-alkyl C ratio in soil was higher than that of humic extracts, which was decreased below soil depth. Aromaticity of soil and humic extract was ranged from 29-38 and 24-32%, which was highest at the humic extract of 70-80 cm in soil depth. These results indicate that the changes of SOC in volcanic ash soil resulted from alteration of organic composition by pyrolysis and stability of organic carbon by allophane in volcanic ash soil.

Over 8% efficient nanocrystal-derived Cu2ZnSnSe4 solar cells with molybdenum nitride barrier films in back contact structure

  • Pham, Hong Nhung;Jang, Yoon Hee;Park, Bo-In;Lee, Seung Yong;Lee, Doh-Kwon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.426.2-426.2
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    • 2016
  • Numerous of researches are being conducted to improve the efficiency of $Cu_2ZnSnSe_4$ (CZTSe)-based photovoltaic devices, which is one of the most promising candidates for low cost and environment-friendly solar cells. In this work, we concentrate on the back contact of the devices. A proper thickness of $MoSe_2$ in back contact structure is believed to enhance adhesion and ohmic contact between Mo back contact and absorber layer. Nevertheless, too thick $MoSe_2$ layers that are grown during high-temperature selenization process can impede the current collection, thus resulting in low cell performance. By applying molybdenum nitride as a barrier in back contact structure, we were able to control the thickness of $MoSe_2$ layer, which resulted in lower series resistance and higher fill factor of CZTSe devices. The phase transformation of Mo-N binary system was systematically studied by changing $N_2$ concentration during the sputtering process. With a proper phase of Mo-N fabricated by using an adequate partial pressure of $N_2$, the efficiency of CZTSe solar cells as high as 8.31% was achieved while the average efficiency was improved by about 2% with respect to that of the referent cells where no barrier layer was employed.

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Maintenance and Dynamic Behavior of Advanced Spherical Bearings under Railway Open-Steel-Plate-Girder Bridges (판형교에서 개량된 스페리칼받침의 유지보수 및 동적 거동)

  • Choi, Eun-Soo;Lee, Hee-Up;Lee, Seung-Yong
    • Journal of the Korean Society for Railway
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    • v.11 no.2
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    • pp.165-175
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    • 2008
  • Line type rigid bearings for Open-Steel-Plate-Girder railway bridges have several problems in service, and they are unstable structurally. A series of lateral resistance tests were performed for a retrieved line type bearing. A spherical bearing with advanced maintenance-capability and a device to resist the up-lift was developed and replaced the existing ones. An experiment of maintenance for a new spherical bearing under real Open-Steel-Plate-Girder bridge was conducted and their good maintenance performance was proved. Also, a test against up-lift was performed for the bearing. The dynamic behavior of the bridge was measured and analyzed for the two cases of the existing and replaced bearings. Therefore, the suitability of the new spherical bearings on the railway bridge was improved.

Modeling and Characteristics of PDA CCFL Driving Circuits for Piezoelectric Transformer (압전 트랜스포머를 이용한 PDA용 CCFL구동회로의 모델링과 동작특성)

  • Hwang L.H.;Jang E.S.;Nam W.Y.;Yoo J.H.;Oh D.O.;Cho M.T.;Ahn I.S;Joo H. J
    • Proceedings of the KIPE Conference
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    • 2003.07a
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    • pp.279-282
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    • 2003
  • In this paper, to apply piezoelectric transformer for PDA backlight inverter, piezoelectric transformer using the composition which $Nb_2O_5$ added into PNW-PMN-PZT ceramics was fabricated as Rosen-type one with the size of $1165mm^3$. And their electrical characteristics were investigated with the variations of load resistance and driving frequency And then, the driving circuit for PDA CCFL(0.6W) which composed of the two MOSFETs connecting in series was manufactured using piezoelectric transformer, VCO and one-chip microprocessor. After driving for 25 min using the proposed circuit for PDA CCFL(0.6W), driving frequency of 214.4kHz, input voltage of 31.78 V and input current of 21.1mA were shown. And then, output voltage of 293.2 V and output current of 2.2mA were shown. At the same time, efficiency of 96.2$\%$ and temperature rise of $3.6^{\circ}C$ were appeared at the piezoelectric transformer.

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cDNA Microarray Analysis of Phytophthora Resistance Related Genes Isolated from Pepper

  • Kim, Hyounjoung;Lee, Mi-Yeon;Kim, Ukjo;Lee, Sanghyeob;Park, Soon-Ho;Her, Nam-Han;Lee, Jing-Ha;Yang, Seung-Gyun;Harn, Chee-Hark
    • Proceedings of the Korean Society of Plant Pathology Conference
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    • 2003.10a
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    • pp.67.1-67
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    • 2003
  • Phytophthora blight is a devastating disease of pepper and occurs almost anywhere peppers are grown. Phytophthora blight is caused by Phytophthora capsici and this pathogen can infect every part of the plant by moving inoculum in the soil, by infecting water on surface, by aerial dispersal to sporulating lesions. Management of Phytophthora blight currently relies on cultural practices, crop rotation, and use of selective fungicides. Since these treatments are a short-term management, a classical breeding for development of resistant pepper against the Phytophthora is an alternative. So far some of the resistant cultivars have been on the market, but those are limited regionally and commercially. Therefore, ultimately an elite line resistant against this disease should be developed, if possible, by biotechnology. We have set out a series of work recently in order to develop Phytophthora resistant pepper cultivar. For the first time, the cDNA microarray analysis was peformed using an EST chip that holds around 5000 pepper EST clones to identify genes responsive to Phytophthora infection. Total RNA samples were obtained from Capsicum annuum PI201234 after inoculating P. capsici to roots and soil and exposed to the chip. .Around 900 EST clones were up-regulated and down-regulated depending on the two RNA sample tissues, leaf and root. From those, we have found 55 transcription factors that may be involved in gene regulation of the disease defense mechanism. Further and in detail information will be provided in the poster.

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Effect of metal buffer layers on the growth of GaN on Si substrates (실리콘 기판위에 금속 완충층을 이용한 GaN 성장과 특성분석)

  • Lee, Jun Hyeong;Yu, Yeon Su;Ahn, Hyung Soo;Yu, Young Moon;Yang, Min
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.23 no.4
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    • pp.161-166
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    • 2013
  • AlN buffer layers have been used for the growth of GaN layers on Si substrates. However, the doping of high concentration of carriers into AlN layers is still not easy, therefore it may cause the increase of series resistance when it is used for the electrical or optical devices. In this work, to improve such a problem, the growth of GaN layers on Si substrates were performed using metal buffer layers instead of AlN buffer layer. We tried combinations of Ti, Al, Cr and Au as metal buffer layers for the growth of GaN on Si substrates. Surface morphology was measured by optical microscope and scanning electron microscope (SEM), and optical properties and crystalline quality were measured by photoluminescence (PL) and X-ray diffractometer (XRD), respectively. Electrical resistances for both cases of AlN and metal buffer layer were compared by current-voltage (I-V) measurement.