• Journal of Ocean Engineering and Technology
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• v.31 no.1
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• pp.69-79
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• 2017

This paper presents the operations of a multi-beam echo sounder (MBES) installed on the deep-sea remotely operated vehicle (ROV) Hemire. Hemire explored hydrothermal vents in the Forecast volcano located near the Mariana Trench in March of in 2006. During these explorations, we acquired profiling points on the routes of the vehicle using the MBES. Information on the position, depth, and attitude of the ROV are essential to obtain higher accuracy for the profiling quality. However, the MBES installed on Hemire does not have its own position and depth sensors. Although it has attitude sensors for roll, pitch, and heading, the specifications of these sensors were not clear. Therefore, we had to merge the high-performance sensor data for the motion and position obtained from Hemire into the profiling data of the MBES. Then, we could properly convert the profiling points with respect to the Earth-fixed coordinates. This paper describes the integration of the MBES with Hemire, as well as the coordinate conversion between them. Bathymetric maps near the summit of the Forecast volcano were successfully collected through these processes. A comparison between the bathymetric maps from the MBES and those from the Onnuri Research Vessel, the mother ship of the ROV Hemire for these explorations, is also presented.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.3
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• pp.96-101
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• 2015

This paper describes a design and implementation of the NFC bridge chip which performs interface between kinds of devices and mobile phones including NFC controller through NFC communication. The NFC bridge chip consists of the digital part and the analog part which are based on NFC Forum standard. Therefore the chip treats RF signals and then transforms the signal to digital data, so it can interface kinds of devices with the digital data. Especially the chip is able to detect RF signals and then wake up the host processor of a device. The wakeup function dramatically decreases the power consumption of the device. The carrier frequency is 13.56MHz, and the data rate is up to 424kbps. The chip has been fabricated with SMIC 180nm mixed-mode technology. Additionally an NFC bridge chip application to the blood glucose measurement system is described for an application example.

• Composites Research
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• v.13 no.5
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• pp.50-59
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• 2000

In this paper, two methods to suppress flutter of the composite panel are examined. First, in the active control method, a controller based on the linear optimal control theory is designed and control input voltage is applied on the actuators and a PZT is used as actuator. Second, a new technique, passive suppression scheme, is suggested for suppression of the nonlinear panel flutter. In the passive suppression scheme, a shunt circuit which consists of inductor-resistor is used to increase damping of the system and as a result the flutter can be attenuated. A passive damping technology, which is believed to be more robust suppression system in practical operation, requires very little or no electrical power and additional apparatuses such as sensor system and controller are not needed. To achieve the great actuating force/damping effect, the optimal shape and location of the actuators are determined by using genetic algorithms. The governing equations are derived by using extended Hamilton's principle. They are based on the nonlinear von Karman strain-displacement relationship for the panel structure and quasi-steady first-order piston theory for the supersonic airflow. The discretized finite element equations are obtained by using 4-node conforming plate element. A modal reduction is performed to the finite element equations in order to suppress the panel flutter effectively and nonlinear-coupled modal equations are obtained. Numerical suppression results, which are based on the reduced nonlinear modal equations, are presented in time domain by using Newmark nonlinear time integration method.

• Journal of Korean Ophthalmic Optics Society
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• v.8 no.1
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• pp.35-39
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• 2003

The display technology on the retina is the key role in inspecting the condition of the patients. 2-dimensional retina image is widely used in the eye examination as of today. Recently, 3-dimensional retina image ones have been introduced to this area, but the quality of the image is not fully satisfied to the operator. For the purpose of developing 3-D retina imaging instrument, the optimization of a 3-D retina imaging system using Code-V tool was investigated in this thesis. He-Ne laser having the wavelength 632.8 nm was used to make a power source to detect the retina. Several lenses and mirrors installed on sledge which were developed to perform focus control on 3-D device were designed to make a beam focusing and direct line. Polygon scanner having 24 mirror facets and galvanometer making tilting movement were utilized to make a 2-D laser plane. Also, design of eye ball had been fulfilled to see the focus of the 2-D plane. Reflected ray from retina detected on the sensor array with the same path. All cognitive components were optimized for aberration correction in order to focus on retina. Results of optimization were compared to those of initial designed optics system. On the basis of above results, the result of third aberration has been corrected to stable values to the optical system. MTF evaluating the resolution of an image has been closely correlated to the diffraction limit and PSF indicating the strength distribution of an image has shown the SR value as 0.9998 having high performance. The possibility of new and powerful 3-D retina image instrument was verified by simulating each component of the instrument by Code-V.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.10
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• pp.117-124
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• 2017

A Smart Grid is a system that can efficiently use energy by exchanging real-time information in both directions between a consumer and a power supplier using ICT technology on an existing power network. DR(Demand response) is an arrangement in which electricity users can sell the electricity they save to the electricity market when the price of electricity is high or the power system is crisis. In this study, we developed a power meter data transmission device and power IT system that measure the demand information in real-time using a smart meter and transmit it to a cloud server. The power meter data transmission device developed in this study uses alight sensor connected to a Raspberry Pi 3 to measure the number of blinking lamps on the KEPCO meter per unit of power, in order to provide reliable data without any measurement errors with respect to the KEPCO power data. The power measurement data transmission device uses the standard communication protocol, OpenADR 2.0b. The measured data is transmitted to the power IT system, which consists of the VEN, VTN, and calculation program, via the LTE WiFi communication network and stored in its MySQL DB. The developed power measurement data transmission device issues a power supply instruction and performs a peak reduction DR when a power system crisis occurs. The developed power meter data transmission device has the advantage of allowing the user to adjust it every 1 minute, where as the existing smart metering time is fixed at once every 15 minutes.

• The KIPS Transactions:PartC
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• v.14C no.1 s.111
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• pp.95-104
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• 2007

Mobile multimedia services such as TV-call or video streaming are gradually becoming popular in the 3rd or more generation mobile network (IMT-2000). Multimedia traffic is expected to continue increasing into the coming years, and IP technology is considered to be the efficient way of transporting such huge volumes of multimedia traffic. IP-based IMT network platform represents an evolution from IMT-2000. The structure of IP-based IMT network as ubiquitous platform is three-layered model : Middleware including Network Control PlatForm (NCPF) and Service Support PlatForm (SSPF), IP-BackBone (IP-BB), access network including sensor network. Mobility Management (MM) architecture in NCPF is proposed for IP-based IMT network in order to manage routing information and location information separately. The generous existing method of multicast control in IP-based IMT network is Remote Subscription. But Remote Subscription has problem that should be reconstructed whole multicast tree when sender in multicast tree moves to another area. To solve this problem, we propose the way to put Multicast-manager in NCPF.

• Journal of Sensor Science and Technology
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• v.7 no.1
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• pp.67-72
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• 1998

The crystallized CuPc and PbTe films are formed by thermal evaporation and pulsed ArF excimer laser ablation. Structural and electrical properties of thin film is observed by XRD and current-voltage(I-V) curves. From XRD analysis, both PbTe and CuPc thin films show a-axis oriented structure. For the measurement of photovoltaic effect, the transverse current-voltage curve of CuPc/Si, PbTe/Si and PbTe/CuPc/Si junctions have been analyzed in the dark and under illumination. The PbTe/CuPc/Si junction exthibits a strong photovoltaic characteristics with short circuit current($J_{sc}$) of $25.46\;mA/cm^{2}$ and open-circuit voltage($V_{oc}$) of 170 mV. Quantum efficiency and power conversion efficiency are calculated to be 15.4% and $3.46{\times}10^{-2}$, respectively. Based on the results of QE and ${\eta}$, the photocurrent process of PbTe/CuPc/Si junction can be explained as following three effective steps; photocarrier generation in the CuPc layer, carrier separation at PbTe/CuPc interface, and finally a transportation of electrons through the PbTe layer.

• Journal of Sensor Science and Technology
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• v.9 no.4
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• pp.297-306
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• 2000

To improve the performance of MEMS devices, fabricating single-crystalline silicon HARS (high aspect ratio structure) with thicknesses of up to several tens of micrometers has been an active research topic in recent years. However, achieving electrical isolation, which is required for actuating a structure or sensing an electrical signal, has been one of the main problems in single-crystalline silicon HARS fabrication technologies. In this paper, new isolation technologies using high aspect ratio oxide beams and sidewalls are developed to achieve electrical isolation between electrodes of single-crystalline silicon HARS. The developed isolation technologies use insulating oxide structural supports from either the structural sides or from the bottom. In this case because the trench oxide supports have a depth of several tens of ${\mu}m$, the effects of residual stress must be considered. In this paper, insulating supports are fabricated using PECVD TEOS films, the residual stress of the insulating supports is measured, and the effect of the residual stress on the structure is analyzed. It is shown using microresonators, that the developed isolation technologies can be effectively used for HARS using single-crystalline silicon.

• Journal of Sensor Science and Technology
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• v.7 no.1
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• pp.45-50
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• 1998

Platinum-Cobalt alloy thin films were deposited on $Al_{2}O_{3}$ substrate by magnetron cosputtering for RTD temperature sensors. We made Pt-Co alloy resistance patterns on the $Al_{2}O_{3}$ substrate by lift-off method and investigated the physical and electrical characteristics of these films under various conditions, the input power, working vacuum, annealing temperature and time, and also after annealing these films. The resistivity and sheet resistivity of these films were decreased with increasing the annealing temperature. At input power of Pt : $4.4\;W/cm^{2}$, Co : $6.91\;W/cm^{2}$, working vacuum of 10 mTorr and annealing conditions of $800^{\circ}C$ and 60 min, the resistivity and sheet resistivity of Pt-Co thin films was $15{\mu}{\Omega}{\cdot}cm$ and $0.5{\Omega}/{\square}$, respectively and the TCR value of Pt-Co alloy thin films with thickness of $3000{\AA}$ were $3740ppm/^{\circ}C$ in the temperature range of $25{\sim}600^{\circ}C$. These results indicate that Pt-Co alloy thin films have potentiality for the RTD temperature sensors.

• Journal of Sensor Science and Technology
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• v.1 no.2
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• pp.173-181
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• 1992

Tantalum pentoxide($Ta_{2}O_{5}$) thin films on p-type (100) silicon wafer were fabricated by RF reactive sputtering. Physical properties and structure of the specimens were examined by XRD and AES. From the C-V analysis, the dielectric constant of $Ta_{2}O_{5}$ films was in the range of 10-12 in the reactive gas atmosphere in which 10% of oxygen gas is mixed. The ratio of Ta : 0 was 1 : 2 and 1 : 2.49 by AES and RBS examination, respectively. The heat-treatment at $700^{\circ}C$ in $O_{2}$ ambient led to induce crystallization. When the heat-treatment temperature was $1000^{\circ}C$, the dielectric constant was 20.5 in $O_{2}$ ambient and 23 in $N_{2}$ ambient, respectively. The crystal structure of $Ta_{2}O_{5}$ film was pseudo hexagonal of ${\delta}-Ta_{2}O_{5}$. The flat band voltage shift(${\Delta}V_{FB}$) of the specimens and the leakage current density were decreased for higher oxygen mixing ratio. The maximum breakdown field was 2.4MV/cm at the oxygen mixing ratio of 10%. The $Ta_{2}O_{5}$ films will be applicable to hydrogen ion sensitive film and gate oxide material for memory device.