• Journal of Sensor Science and Technology
• /
• v.8 no.3
• /
• pp.219-225
• /
• 1999

The purpose of this study is to measure such parameters as TMR, OAR, TSF for small beams ranging in size from 12.5mm to 40mm by diode, ionization chamber, film, TLD and to determine proper detectors for the measurement of 6MV small x-ray beams. Diode and film show good results within 2% error for the TMR measurement of the beam as small as beam with diameter 12.5mm. Diode and film have excellent spatial resolution in the OAR measurement and the comparison between two detectors shows the error within 3%. But TMR and OAR can not be measured accurately by the ionization chambers. The TSF by diode and TLD records 0.890.96 for the beams with diameter 12.5mm 40mm. The TSF determined by 0.125cc ionization chamber and markus ionization chamber for the larger beams than the beams with diameter 25mm agrees within 2% comparing with that of diode and TLD.

• Journal of Sensor Science and Technology
• /
• v.8 no.5
• /
• pp.407-413
• /
• 1999

The resonant frequency of dielectric rod resonator can be calculated very accurately by means of the concept of electric and magnetic walls from the symmetry. But in a real situation, when the supporter is placed in the cavity, asymmetry appears due to the supporter and its dielectric constant. Then we need research into the resonance characteristic of asymmetric dielectric resonator. In this paper, for the dielectric rod resonator which is placed in the asymmetric position in the conducting cavity, the equation for resonance characteristic was derived and the resonant frequency was calculated with the eigenfunction expansion method. We found that the calculated resonant frequency is very accurate when it was compared with the experimental result and that asymmetry affects the resonant frequency more in TM mode than in TE or in hybrid mode.

• Journal of Sensor Science and Technology
• /
• v.7 no.4
• /
• pp.234-242
• /
• 1998

Changes in transmission and thermoluminescent characteristics were used in order to find out the optimum growth condition of CsI single crystal scintillators which were made relatively defect-free using Czochralski method. Impurity distribution in the crystals and the intensity and number of thermoluminescent glow peaks decreased as the process of crystallization was repeated. The direction of crystal growth turned out to be (110), the crystal structure of grown CsI was bee, and its lattice constant was found to be $4.568{\AA}$. The activation energy (trap depths) of CsI:3rd was 0.45 eV and its frequency factor was $5.18{\times}10^5\;sec^{-1}$.

• Journal of Sensor Science and Technology
• /
• v.8 no.5
• /
• pp.421-426
• /
• 1999

In this paper, we present p-channel GaAs MOSFET having $Al_2O_3$ as gate insulator fabricated on a semi-insulating GaAs substrate, which can be operated in the depletion mode. $1\;{\mu}m$ thick undoped GaAs buffer layer, $4000\;{\AA}$ thick p-type GaAs epi-layer, undoped $500{\AA}$ thick AlAs layer, and $50\;{\AA}$ thick GaAs cap layer were subsequently grown by molecular beam epitaxy(MBE) on (100) oriented semi-insulating GaAs substrate and this wafer was oxidized. AlAs layer was fully oxidized as a $Al_2O_3$ thin film. The I-V, $g_m$, breakdown charateristics of the fabricated GaAs MOSFET showed that wet thermal oxidation of AlAs/GaAs epilayer/S I GaAs was successful in realizing depletion mode p-channel GaAs MOSFET.

• Journal of Sensor Science and Technology
• /
• v.7 no.4
• /
• pp.293-299
• /
• 1998

An objective of this study is to develop a voltage measuring device that uses a gas-filled switch (GS) on 22.9 kV-y extra-high voltage distribution lines. The voltage measuring device proposed in this paper is a kind of capacitive divider which consists of a detecting electrode attached outside of the bushing of GS, an impedance matching circuit, and a voltage buffer. It can be easily installed in an established GS without changing the structure. For the calibration and application investigations, the voltage measuring device was set up in the 25.8 kV 400 A GS, and a step pulse generator having 5 ns rise time is used. As a result, it was found that the frequency bandwidth of the voltage measuring device ranges from 1.35 Hz to about 13 MHz. The error of voltage dividing ratio which is evaluated by the commercial frequency voltage of 60 Hz was less than 0.2%. In addition, voltage dividing ratio in the commercial frequency voltage and in a non-oscillating impulse voltage were compared, and their deviation were less than 0.7%.

• Journal of Sensor Science and Technology
• /
• v.8 no.3
• /
• pp.291-297
• /
• 1999

The plasma etching of tungsten thin films has been studied with $SF_6$ gas in RIE system. The etch rate of ${\alpha}$-phase W film with $SF_6$ gas plasma has been showed to depend strongly on process parameters ($SF_6$, $SF_6-N_2$ gas). Effect of $N_2$ addition and etching selectivity between W film and photoresist have also been studied in detail. Etching profiles between W film and photoresist were investigated by SEM. The compounds on W surface after $SF_6-N_2$ gas plasma treatment were examined by XPS and the concentration of F ions was detected by OES during plasma on.

• Journal of Sensor Science and Technology
• /
• v.15 no.4
• /
• pp.223-230
• /
• 2006

An FIR filter for digital voice signal processing has been designed and implemented using a microcontroller in implantable middle ear hearing devices (IMEHDs). The designed digital voice signal processing filter which has fast and accurate filtering operation and controllable filter characteristics has been implemented using a hardware multiplier and a direct memory access (DMA) in the low power microcontroller, MSP430F169. It has been confirmed that each of the implemented 6-orders Remez FIR filters with 1 channel and 2 channels can be applied to the voice signal processing module of IMEHDs based on the evaluation results of the filtering performance experiment.

• Journal of Sensor Science and Technology
• /
• v.15 no.4
• /
• pp.257-262
• /
• 2006

A Fe-C eutectic cell for thermocouple calibration was manufactured and tested to investigate its phase transition characteristics in the thermocouple thermometry. It was observed that the freezing plateaus were strongly affected by the freeze-inducing temperature $T_{f}$. In case of the melting process, the melting plateau was influenced by the previous thermal history. As $T_{f}$. in the previous freezing was lower, the melting plateau became lower with a temperature dependence as small as $-0.0015^{\circ}C/^{\circ}C$. Therefore, it was found that the freeze-inducing temperature should be fixed to obtain a reproducible phase transition temperature in the melting. After fixing $T_{f}$, the melting process was examined and it was found that long and flat melting plateau was obtained within a reproducibility of about ${\pm}0.01^{\circ}C$. Based on the observed results, it was recommended that Fe-C eutectic temperature be best realized for the melting process with a melt-inducing temperature of $+3^{\circ}C$ above the expected liquidus temperature after freezing at $-5^{\circ}C$ below the solidus temperature.

• Journal of Sensor Science and Technology
• /
• v.13 no.1
• /
• pp.12-19
• /
• 2004

The tinnitus which is the one of the auditory disease is a phenomenon that the patients feel the sound in the ear or the head when there is no sound sources. There have been many therapies for this tinnitus so far, but it is known that the TRT (Tinnitus Retraining Therapy) is the most effective therapy. So we designed and developed the controllable white noise generator for TRT. It must be designed as small as possible for user's convenience, such as the ITE (In The Ear) type hearing aids. It used the thermal noise as the white noise source. And filter and tone control circuits are used at the end of the noise generation part to control the white noise characteristics. This link of the controllable circuits is used to change the white noise's characteristic for the various tinnitus patients' characteristic. we can confirm that the designed and implemented controllable white noise generator which is a ITE type operates properly by the experiments of filter and tone control circuit.

• Journal of Sensor Science and Technology
• /
• v.12 no.5
• /
• pp.218-224
• /
• 2003

The devices of n-channel poly silicon thin film transistors(TFTs) hydrogenated by plasma, $H_2$ and $H_2$/plasma processes are fabricated. The carriers sensitivity characteristics are analyzed with voltage bias stress at the gate oxide. The parametric sensitivity characteristics caused by electrical stress conditions in hydrogenated devices are investigated by measuring the drain current, threshold voltage($V_{th}$), subthreshold slope(S) and maximum transconductance($G_m$) values. As a analyzed results, the degradation characteristics in hydrogenated n-channel polysilicon thin film transistors are mainly caused by the enhancement of dangling bonds at the poly-Si/$SiO_2$ interface and the poly-Si grain boundary due to dissolution of Si-H bonds. The generation of traps in gate oxide are mainly dued to hot electrons injection into the gate oxide from the channel region.