• Journal of Sensor Science and Technology
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• v.31 no.2
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• pp.90-95
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• 2022

The effect of the structure of an ITO nanoparticle film sensor on its performance was studied. A printed ITO film (P-ITO film) was fabricated on a flexible polyethylene terephthalate (PET) substrate, and the contact resistance of the electrode and sensor response change were clarified according to the detection position. The contact resistance between Ag and P-ITO was observed to be -204.4 Ω using the transmission line method (TLM), confirming that a very good ohmic contact is possible. In addition, we confirmed that the contact position of the analyte had a significant influence on the response of the sensor. Based on these results, the performance of the four types of sensors was compared. Consequently, we observed that 1) optimizing the resistance of the printed film, 2) optimizing the electrode structure and analyte input position, and 3) optimizing the electrode area are very important for fabricating a metal oxide nanoparticle (MONP) sensor with optimal performance.

• Transactions on Electrical and Electronic Materials
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• v.8 no.5
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• pp.196-200
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• 2007

In this paper, we propose and discuss the design using a simple method that reduces the fixed pattern noise(FPN) generated on the amorphous Si($\alpha-Si$) bolometer. This method is applicable to an IR image sensor. This method can also minimize the size of the reference resistor in the readout integrated circuit(ROIC) which processes the signal of an IR image sensor. By connecting four bolometer cells in parallel and averaging the resistances of the bolometer cells, the fixed pattern noise generated in the bolometer cell due to process variations is remarkably reduced. Moreover an $\alpha-Si$ bolometer cell, which is made by a MEMS process, has a large resistance value to guarantee an accurate resistance value. This makes the reference resistor be large. In the proposed cell structure, because the bolometer cells connected in parallel have a quarter of the original bolometer's resistance, a reference resistor, which is made by poly-Si in a CMOS process chip, is implemented to be the size of a quarter. We designed a ROIC with the proposed cell structure and implemented the circuit using a 0.35 um CMOS process.

• Journal of Sensor Science and Technology
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• v.27 no.1
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• pp.40-46
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• 2018

In this paper, we focus on optimization of a boron ($^{11}B$)-implanted n type Si epi substrate for obtaining near-zero temperature coefficient of resistance (TCR) at temperature range from 25 to $125^{\circ}C$. The $^{11}B$-implantation on the N type-Si epi substrate formed isolation from the rest of the N-type Si by the depletion region of a PN junction. The TCR increased as the temperature of rapid thermal anneal (RTA) was increased at the temperature range from $900^{\circ}C$ to $1000^{\circ}C$ for the $p^+$ contact with implantation at dose of $1E16/cm^2$, but sheet resistance of this film was decreased. After the optimization of anneal process condition, the TCR of $1126.7{\pm}30.3$ (ppm/K) was obtained for the $p^-$ resistor-COB package chips contained $p^+$ contact with the implantation of $5E14/cm^2$. This shows the potential of the $^{11}B$-implanted n type Si epi substrate as a resistor for pressure sensor in thermal stable environment applications..

• Journal of Sensor Science and Technology
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• v.16 no.6
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• pp.407-412
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• 2007

For $VO_{2}$ sensors applicable to temperature measurement by using the nature of semiconductor to metal transition, the crystallinity, microstructure, and temperature vs. resistance characteristics were investigated systematically as a function of the annealing condition. The starting materials, vanadium pentoxide ($V_{2}O_{5}$) powders, were mixed with vehicle to form paste. This paste was screen-printed on $Al_{2}O_{3}$ substrates and then $VO_{2}$ thick films were heat-treated at $450^{\circ}C$ to $600^{\circ}C$, respectively, for 1 hr in $N_{2}$ gas atmosphere for the reduction. As results of the temperature vs. resistance property measurements, the electrical resistance of the $V_{2}O_{5}$ sensor in phase transition range was decreased by $10^{3.9}$ order. The presented critical temperature sensor could be used in fire-protection and control systems.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.419-422
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• 1998

There are lots of researches which are using quratz crystal in order to apply it to sensors, for example, mass detect sensor, humidity sensor, gas sensor, etc. We tried to apply quartz crystal to the sensor using the resonant frequency and the resistance properties. Four kinds of fatty acid which are having the same head group are coated at the surface of quartz crystal, the shift of the resonant frequency and the resistance are observed according to length of the tail group. Myristic acid$(C_{14})$, palmitic acid$(C_16)$, stearic acid$(C_{18})$, and arachidic acid$(C_{20})$ were coated by Langmuir-Blodgett(LB) technique. As results, the resonant frequency shift was observed linearly. However, there are some difference compared with Sauerbrey's equation. It can be explained by the effect of the temperature property and/or humidity. On the other hand, the shift of the resistance was observed nonlinearly.

• Journal of Sensor Science and Technology
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• v.18 no.5
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• pp.349-352
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• 2009

This paper describes the fabrication and characteristics of micro heaters built on AlN($0.1{\mu}m$)/3C-SiC($1{\mu}m$) suspended membranes by surface micromachining technology. In this work, 3C-SiC and AlN films are used for high temperature environments. Pt thin film was used as micro heaters and temperature sensor materials. The resistance of temperature sensor and the power consumption of micro heaters were measured and calculated. The heater is designed for operating temperature up to about $800^{\circ}C$ and can be operated at about $500^{\circ}C$ with a power of 312 mW. The thermal coefficient of the resistance(TCR) of fabricated Pt resistance of temperature detector(RTD)'s is 3174.64 ppm/$^{\circ}C$. A thermal distribution measured by IR thermovision is uniform on the membrane surface.

• Journal of Sensor Science and Technology
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• v.22 no.6
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• pp.379-386
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• 2013

The influences of the load resistance $R_L$ on the magnetoelectric (ME) characteristics of $NiZnFe_2O_4+PZT$ composite were investigated in the non-resonance frequency range. The ME coefficient peak increases with increasing $R_L$, but the frequency indicating the ME coefficient peak decreases with increasing $R_L$. The maximum output power peak is approximately $9.3{\times}10^{-10}mW/Oe$ near $R_L=3.3M{\Omega}$ at f=280 Hz, and the ME coefficient seems to be saturated at $R_L>20M{\Omega}$. This frequency shift effect of $R_L$ shows that the frequency range for an ME sensor application can be modulated with the appropriate value of $R_L$. The ME output voltage has a good linear response to the ac field Hac and shows fair stability over a range of temperatures. The measured non-linearity of this sample is approximately 0.8%. This sample will allow for a low-strength magnetic ac-field sensor. The result from this sample will serve as basic data for a signal-processing circuit system.

• Journal of Sensor Science and Technology
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• v.27 no.6
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• pp.357-361
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• 2018

This paper presents an averaging current adjustment technique for reducing the pixel resistance variation in a bolometer-type uncooled infrared image sensor. Each unit pixel was composed of an active pixel, a reference pixel for the averaging current adjustment technique, and a calibration circuit. The reference pixel was integrated with a polysilicon resistor using a standard complementary metal-oxide-semiconductor (CMOS) process, and the active pixel was applied from outside of the chip. The averaging current adjustment technique was designed by using the reference pixel. The entire circuit was implemented on a chip that was composed of a reference pixel array for the averaging current adjustment technique, a calibration circuit, and readout circuits. The proposed reference pixel array for the averaging current adjustment technique, calibration circuit, and readout circuit were designed and fabricated by a $0.35-{\mu}m$ standard CMOS process.

• Smart Structures and Systems
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• v.3 no.2
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• pp.189-200
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• 2007

As a functional material, shape memory alloy (SMA) has attracted much attention and research effort to explore its unique properties and its applications in the past few decades. Some of its properties, in particular the electrical resistance (ER) based self-sensing property of SMA, have not been fully studied. Electrical resistance of an SMA wire varies during its phase transformation. This variation is an inherent property of the SMA wire, although it is highly nonlinear with hysteresis. The relationship between the displacement and the electrical resistance of an SMA wire is deterministic and repeatable to some degree, therefore enabling the self-sensing ability of the SMA. The potential of this self-sensing ability has not received sufficient exploration so far, and even the previous studies in literature lack generality. This paper concerns the utilization of the self-sensing property of a spring-biased Nickel-Titanium (Nitinol) SMA actuator for two applications: ER feedback position control of an SMA actuator without a position sensor, and estimation of the opening of a SMA actuated valve. The use of the self-sensing property eliminates the need for a position sensor, therefore reducing the cost and size of an SMA actuator assembly. Two experimental apparatuses are fabricated to facilitate the two proposed applications, respectively. Based on open-loop testing results, the curve fitting technique is used to represent the nonlinear relationships between the displacement and the electrical resistance of the two SMA wire actuators. Using the mathematical models of the two SMA actuators, respectively, a proportional plus derivative controller is designed for control of the SMA wire actuator using only electrical resistance feedback. Consequently, the opening of the SMA actuated valve can be estimated without using an extra sensor.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.6
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• pp.491-498
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• 2001

The relationship between electrical properties of YBaCuO superconductor and externally applied magnetic field was studied to develop a magnetic field apolarity sensor. The electrical resistance of the superconductor was increased by applying external magnetic field and even after removal of the magnetic field. The behavior was related to the magnetic flux trapped in the superconductor, which penetrates through the materials by the external magnetic field. Some portion of the superconductor was changed to a normal state by the trapped magnetic flux. The appearance of the normal state yielded to enhance the electrical resistance. Electrical characteristics of the superconductor with trapped magnetic flux were extremely sensitive to the external magnetic field and showed different responses depending on the direction of the magnetic field. Considering the observed properties of the superconductor with trapped magnetic flux, a magnetic sensor was fabricated to detect simultaneously both the intensity and the direction of the magnetic field.